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Journal Articles

Hot luminescence of two-dimensional electron hole systems in modulation-doped silicon

Friedemann D. Heinz, Wolfram Kwapil, Stefan W. Glunz

J. Appl. Phys. 135, 075701 (2024)

https://doi.org/10.1063/5.0187280

Published: February 2024

View articletitled, Hot luminescence of two-dimensional electron hole systems in modulation-doped silicon

Journal Articles

Passivating contacts and tandem concepts: Approaches for the highest silicon-based solar cell efficiencies

Martin Hermle, Frank Feldmann, Martin Bivour, Jan Christoph Goldschmidt, Stefan W. Glunz

Appl. Phys. Rev. 7, 021305 (2020)

https://doi.org/10.1063/1.5139202

Published: April 2020

View articletitled, Passivating contacts and tandem concepts: Approaches for the highest silicon-based solar cell efficiencies

Journal Articles

In-situ wafer temperature measurement during firing process via inline infrared thermography

Daniel Ourinson, Gernot Emanuel, Attila Csordás, Gunnar Dammaß, Harald Müller, Christoph Sternkiker, Florian Clement, Stefan W. Glunz

AIP Conf. Proc. 2156, 020013 (2019)

https://doi.org/10.1063/1.5125878

Published: September 2019

View articletitled, In-situ wafer temperature measurement during firing process via inline infrared thermography

Journal Articles

Advanced metallization with low silver consumption for silicon heterojunction solar cells

Jörg Schube, Tobias Fellmeth, Mike Jahn, Roman Keding, Stefan W. Glunz

AIP Conf. Proc. 2156, 020007 (2019)

https://doi.org/10.1063/1.5125872

Published: September 2019

View articletitled, Advanced metallization with low silver consumption for silicon heterojunction solar cells

Journal Articles

Evaluation of the burnout phase of the contact firing process for industrial PERC

Daniel Ourinson, Gernot Emanuel, Andreas Lorenz, Florian Clement, Stefan W. Glunz

AIP Conf. Proc. 2147, 040015 (2019)

https://doi.org/10.1063/1.5123842

Published: August 2019

View articletitled, Evaluation of the burnout phase of the contact firing process for industrial PERC

Journal Articles

Study on the interfacial oxide in passivating contacts

Jana-Isabelle Polzin, Frank Feldmann, Bernd Steinhauser, Martin Hermle, Stefan W. Glunz

AIP Conf. Proc. 2147, 040016 (2019)

https://doi.org/10.1063/1.5123843

Published: August 2019

View articletitled, Study on the interfacial oxide in passivating contacts

Journal Articles

Applicability of photonic sintering and autoclaving as alternative contact formation methods for silicon solar cells with passivating contacts

Jörg Schube, Tobias Fellmeth, Florian Maier, Roman Keding, Florian Clement, Stefan W. Glunz

AIP Conf. Proc. 1999, 040019 (2018)

https://doi.org/10.1063/1.5049282

Published: August 2018

View articletitled, Applicability of photonic sintering and autoclaving as alternative contact formation methods for silicon solar cells with passivating contacts

Journal Articles

Control of boron diffusion from APCVD BSG layers by interface oxidation

Sebastian Meier, Sabrina Lohmüller (née Werner), Sebastian Mack, Andreas Wolf, Stefan W. Glunz

AIP Conf. Proc. 1999, 070003 (2018)

https://doi.org/10.1063/1.5049302

Published: August 2018

View articletitled, Control of boron diffusion from APCVD BSG layers by interface oxidation

Journal Articles

Electron-selective contacts via ultra-thin organic interface dipoles for silicon organic heterojunction solar cells

Christian Reichel, Uli Würfel, Kristina Winkler, Hans-Frieder Schleiermacher, Markus Kohlstädt, Moritz Unmüssig, Christoph A. Messmer, Martin Hermle, Stefan W. Glunz

J. Appl. Phys. 123, 024505 (2018)

https://doi.org/10.1063/1.5010937

Published: January 2018

View articletitled, Electron-selective contacts via ultra-thin organic interface dipoles for silicon organic heterojunction solar cells

Journal Articles

Influence of the transition region between p- and n-type polycrystalline silicon passivating contacts on the performance of interdigitated back contact silicon solar cells

Christian Reichel, Ralph Müller, Frank Feldmann, Armin Richter, Martin Hermle, Stefan W. Glunz

J. Appl. Phys. 122, 184502 (2017)

https://doi.org/10.1063/1.5004331

Published: November 2017

View articletitled, Influence of the transition region between p- and n-type polycrystalline silicon passivating contacts on the performance of interdigitated back contact silicon solar cells

Journal Articles

Internal resistance of rear totally diffused solar cells with line shaped contacts

Sebastian Meier, Pierre Saint-Cast, Nico Wöhrle, Andreas Fell, Johannes Greulich, Andreas Wolf, Stefan W. Glunz

J. Appl. Phys. 122, 183102 (2017)

https://doi.org/10.1063/1.4999685

Published: November 2017

View articletitled, Internal resistance of rear totally diffused solar cells with line shaped contacts

Journal Articles

Tunnel oxide passivated contacts formed by ion implantation for applications in silicon solar cells

Christian Reichel, Frank Feldmann, Ralph Müller, Robert C. Reedy, Benjamin G. Lee, David L. Young, Paul Stradins, Martin Hermle, Stefan W. Glunz

J. Appl. Phys. 118, 205701 (2015)

https://doi.org/10.1063/1.4936223

Published: November 2015

View articletitled, Tunnel oxide passivated contacts formed by ion implantation for applications in silicon solar cells

Journal Articles

Passivation of phosphorus diffused silicon surfaces with Al₂O₃: Influence of surface doping concentration and thermal activation treatments

Armin Richter, Jan Benick, Achim Kimmerle, Martin Hermle, Stefan W. Glunz

J. Appl. Phys. 116, 243501 (2014)

https://doi.org/10.1063/1.4903988

Published: December 2014

View articletitled, Passivation of phosphorus diffused silicon surfaces with Al2O3: Influence of surface doping concentration and thermal activation treatments

Journal Articles

Reaction kinetics during the thermal activation of the silicon surface passivation with atomic layer deposited Al₂O₃

Armin Richter, Jan Benick, Martin Hermle, Stefan W. Glunz

Appl. Phys. Lett. 104, 061606 (2014)

https://doi.org/10.1063/1.4865901

Published: February 2014

View articletitled, Reaction kinetics during the thermal activation of the silicon surface passivation with atomic layer deposited Al2O3

Journal Articles

Incomplete ionization of aluminum in silicon and its effect on accurate determination of doping profiles

Michael Rauer, Marc Rüdiger, Christian Schmiga, Hartmuth Strutzberg, Mario Bähr, Markus Glatthaar, Stefan W. Glunz

J. Appl. Phys. 114, 203702 (2013)

https://doi.org/10.1063/1.4833242

Published: November 2013

View articletitled, Incomplete ionization of aluminum in silicon and its effect on accurate determination of doping profiles

Journal Articles

Publisher's Note: “Silicon nanocrystals embedded in silicon carbide: Investigation of charge carrier transport and recombination” [Appl. Phys. Lett. 102, 033507 (2013)]

Philipp Löper, Mariaconcetta Canino, Dureid Qazzazie, Manuel Schnabel, Marco Allegrezza, Caterina Summonte, Stefan W. Glunz, Stefan Janz, Margit Zacharias

Appl. Phys. Lett. 102, 109902 (2013)

https://doi.org/10.1063/1.4795238

Published: March 2013

View articletitled, Publisher's Note: “Silicon nanocrystals embedded in silicon carbide: Investigation of charge carrier transport and recombination” [Appl. Phys. Lett. 102, 033507 (2013)]

Journal Articles

Silicon nanocrystals embedded in silicon carbide: Investigation of charge carrier transport and recombination

Philipp Löper, Mariaconcetta Canino, Dureid Qazzazie, Manuel Schnabel, Marco Allegrezza, Caterina Summonte, Stefan W. Glunz, Stefan Janz, Margit Zacharias

Appl. Phys. Lett. 102, 033507 (2013)

https://doi.org/10.1063/1.4789441

Published: January 2013

View articletitled, Silicon nanocrystals embedded in silicon carbide: Investigation of charge carrier transport and recombination

Journal Articles

Erratum on “Determining the defect parameters of the deep aluminum-related defect center in silicon” [Appl. Phys. Lett. 91, 122109 (2007)]

Philipp Rosenits, Thomas Roth, Stefan W. Glunz

Appl. Phys. Lett. 99, 239904 (2011)

https://doi.org/10.1063/1.3652753

Published: December 2011

View articletitled, Erratum on “Determining the defect parameters of the deep aluminum-related defect center in silicon” [Appl. Phys. Lett. 91, 122109 (2007)]

Journal Articles

Analysis and optimization approach for the doped amorphous layers of silicon heterojunction solar cells

Damian Pysch, Christoph Meinhard, Nils-Peter Harder, Martin Hermle, Stefan W. Glunz

J. Appl. Phys. 110, 094516 (2011)

https://doi.org/10.1063/1.3650255

Published: November 2011

View articletitled, Analysis and optimization approach for the doped amorphous layers of silicon heterojunction solar cells

Journal Articles

Characterizing the light guiding of fluorescent concentrators

Jan Christoph Goldschmidt, Marius Peters, Martin Hermle, Stefan W. Glunz

J. Appl. Phys. 105, 114911 (2009)

https://doi.org/10.1063/1.3125524

Published: June 2009

View articletitled, Characterizing the light guiding of fluorescent concentrators

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Hot luminescence of two-dimensional electron hole systems in modulation-doped silicon

Passivating contacts and tandem concepts: Approaches for the highest silicon-based solar cell efficiencies

In-situ wafer temperature measurement during firing process via inline infrared thermography

Advanced metallization with low silver consumption for silicon heterojunction solar cells

Evaluation of the burnout phase of the contact firing process for industrial PERC

Study on the interfacial oxide in passivating contacts

Applicability of photonic sintering and autoclaving as alternative contact formation methods for silicon solar cells with passivating contacts

Control of boron diffusion from APCVD BSG layers by interface oxidation

Electron-selective contacts via ultra-thin organic interface dipoles for silicon organic heterojunction solar cells

Influence of the transition region between p- and n-type polycrystalline silicon passivating contacts on the performance of interdigitated back contact silicon solar cells

Internal resistance of rear totally diffused solar cells with line shaped contacts

Tunnel oxide passivated contacts formed by ion implantation for applications in silicon solar cells

Passivation of phosphorus diffused silicon surfaces with Al₂O₃: Influence of surface doping concentration and thermal activation treatments

Reaction kinetics during the thermal activation of the silicon surface passivation with atomic layer deposited Al₂O₃

Incomplete ionization of aluminum in silicon and its effect on accurate determination of doping profiles

Publisher's Note: “Silicon nanocrystals embedded in silicon carbide: Investigation of charge carrier transport and recombination” [Appl. Phys. Lett. 102, 033507 (2013)]

Silicon nanocrystals embedded in silicon carbide: Investigation of charge carrier transport and recombination

Erratum on “Determining the defect parameters of the deep aluminum-related defect center in silicon” [Appl. Phys. Lett. 91, 122109 (2007)]

Analysis and optimization approach for the doped amorphous layers of silicon heterojunction solar cells

Characterizing the light guiding of fluorescent concentrators

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