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Journal Articles

Properties of high to ultrahigh Si-doped GaN grown at 550 °C by flow modulated metalorganic chemical vapor deposition

Vineeta R. Muthuraj, Caroline E. Reilly, Thomas Mates, Shuji Nakamura, Steven P. DenBaars, Stacia Keller

Appl. Phys. Lett. 122, 142103 (2023)

https://doi.org/10.1063/5.0142941

Published: April 2023

View article titled, Properties of high to ultrahigh Si-doped GaN grown at 550 °C by flow modulated metalorganic chemical vapor deposition

Includes: Supplementary data

Journal Articles

Acceptor traps as the source of holes in p-type N-polar GaN/(AlN/AlGaN) superlattices

Athith Krishna, Aditya Raj, Nirupam Hatui, Stacia Keller, Steven Denbaars, Umesh K Mishra

Appl. Phys. Lett. 120, 132104 (2022)

https://doi.org/10.1063/5.0083790

Published: March 2022

View article titled, Acceptor traps as the source of holes in p-type N-polar GaN/(AlN/AlGaN) superlattices

Journal Articles

Inverted N-polar blue and blue-green light emitting diodes with high power grown by metalorganic chemical vapor deposition

Vineeta R. Muthuraj, Caroline E. Reilly, Thomas Mates, Stacia Keller, Shuji Nakamura, Steven P. DenBaars

Appl. Phys. Lett. 120, 101104 (2022)

https://doi.org/10.1063/5.0083893

Published: March 2022

View article titled, Inverted N-polar blue and blue-green light emitting diodes with high power grown by metalorganic chemical vapor deposition

Journal Articles

Demonstration of device-quality 60% relaxed In_0.2Ga_0.8N on porous GaN pseudo-substrates grown by PAMBE

Christian Wurm, Henry Collins, Nirupam Hatui, Weiyi Li, Shubhra Pasayat, Robert Hamwey, Kai Sun, Islam Sayed, Kamruzzaman Khan, Elaheh Ahmadi, Stacia Keller, Umesh Mishra

J. Appl. Phys. 131, 015701 (2022)

https://doi.org/10.1063/5.0075948

Published: January 2022

View article titled, Demonstration of device-quality 60% relaxed In0.2Ga0.8N on porous GaN pseudo-substrates grown by PAMBE

Journal Articles

Evaluation of linearity at 30 GHz for N-polar GaN deep recess transistors with 10.3 W/mm of output power and 47.4% PAE

Brian Romanczyk, Matthew Guidry, Xun Zheng, Pawana Shrestha, Haoran Li, Elaheh Ahmadi, Stacia Keller, Umesh K. Mishra

Appl. Phys. Lett. 119, 072105 (2021)

https://doi.org/10.1063/5.0058587

Published: August 2021

View article titled, Evaluation of linearity at 30 GHz for N-polar GaN deep recess transistors with 10.3 W/mm of output power and 47.4% PAE

Journal Articles

Investigation and optimization of N-polar GaN porosification for regrowth of smooth hillocks-free GaN films

Henry Collins, Islam Sayed, Wenjian Liu, Shubhra S. Pasayat, Aidan A. Taylor, Weiyi Li, Stacia Keller, U. K. Mishra

Appl. Phys. Lett. 119, 042105 (2021)

https://doi.org/10.1063/5.0049537

Published: July 2021

View article titled, Investigation and optimization of N-polar GaN porosification for regrowth of smooth hillocks-free GaN films

Includes: Supplementary data

Journal Articles

2DEGs formed in AlN/GaN HEMT structures with AlN grown at low temperature

Caroline E. Reilly, Nirupam Hatui, Thomas E. Mates, Shuji Nakamura, Steven P. DenBaars, Stacia Keller

Appl. Phys. Lett. 118, 222103 (2021)

https://doi.org/10.1063/5.0050584

Published: June 2021

View article titled, 2DEGs formed in AlN/GaN HEMT structures with AlN grown at low temperature

Journal Articles

A systematic and quantitative analysis of the bulk and interfacial properties of the AlSiO dielectric on N-polar GaN using capacitance–voltage methods

Wenjian Liu, Islam Sayed, Jana Georgieva, Silvia Chan, Stacia Keller, Umesh K. Mishra

J. Appl. Phys. 128, 074101 (2020)

https://doi.org/10.1063/5.0012289

Published: August 2020

View article titled, A systematic and quantitative analysis of the bulk and interfacial properties of the AlSiO dielectric on N-polar GaN using capacitance–voltage methods

Journal Articles

Color-tunable < 10 μ m square InGaN micro-LEDs on compliant GaN-on-porous-GaN pseudo-substrates

Shubhra S. Pasayat, Ryan Ley, Chirag Gupta, Matthew S. Wong, Cheyenne Lynsky, Yifan Wang, Michael J. Gordon, Shuji Nakamura, Steven P. Denbaars, Stacia Keller, Umesh K. Mishra

Appl. Phys. Lett. 117, 061105 (2020)

https://doi.org/10.1063/5.0011203

Published: August 2020

View article titled, Color-tunable < 10 μ m square InGaN micro-LEDs on compliant GaN-on-porous-GaN pseudo-substrates

Journal Articles

Method of growing elastically relaxed crack-free AlGaN on GaN as substrates for ultra-wide bandgap devices using porous GaN

Shubhra S. Pasayat, Nirupam Hatui, Weiyi Li, Chirag Gupta, Shuji Nakamura, Steven P. Denbaars, Stacia Keller, Umesh K. Mishra

Appl. Phys. Lett. 117, 062102 (2020)

https://doi.org/10.1063/5.0017948

Published: August 2020

View article titled, Method of growing elastically relaxed crack-free AlGaN on GaN as substrates for ultra-wide bandgap devices using porous GaN

Journal Articles

Proposed existence of acceptor-like traps at positive polarization interfaces in p-type III-nitride semiconductors

Athith Krishna, Aditya Raj, Nirupam Hatui, Islam Sayed, Stacia Keller, Umesh K. Mishra

Appl. Phys. Lett. 117, 042104 (2020)

https://doi.org/10.1063/5.0015290

Published: July 2020

View article titled, Proposed existence of acceptor-like traps at positive polarization interfaces in p-type III-nitride semiconductors

Journal Articles

Growth of strain-relaxed InGaN on micrometer-sized patterned compliant GaN pseudo-substrates

Shubhra S. Pasayat, Chirag Gupta, Matthew S. Wong, Yifan Wang, Shuji Nakamura, Steven P. Denbaars, Stacia Keller, Umesh K. Mishra

Appl. Phys. Lett. 116, 111101 (2020)

https://doi.org/10.1063/5.0001480

Published: March 2020

View article titled, Growth of strain-relaxed InGaN on micrometer-sized patterned compliant GaN pseudo-substrates

Journal Articles

An improved methodology for extracting interface state density at Si₃N₄/GaN

Wenjian Liu, Islam Sayed, Chirag Gupta, Haoran Li, Stacia Keller, Umesh Mishra

Appl. Phys. Lett. 116, 022104 (2020)

https://doi.org/10.1063/1.5125645

Published: January 2020

View article titled, An improved methodology for extracting interface state density at Si3N4/GaN

Journal Articles

Investigation of nitrogen polar p-type doped GaN/Al_xGa_(1-x)N superlattices for applications in wide-bandgap p-type field effect transistors

Athith Krishna, Aditya Raj, Nirupam Hatui, Stacia Keller, Umesh K. Mishra

Appl. Phys. Lett. 115, 172105 (2019)

https://doi.org/10.1063/1.5124326

Published: October 2019

View article titled, Investigation of nitrogen polar p-type doped GaN/AlxGa(1-x)N superlattices for applications in wide-bandgap p-type field effect transistors

Journal Articles

Electrical properties and interface abruptness of AlSiO gate dielectric grown on 000 1 ¯ N-polar and (0001) Ga-polar GaN

Islam Sayed, Bastien Bonef, Wenjian Liu, Silvia Chan, Jana Georgieva, James S. Speck, Stacia Keller, Umesh K. Mishra

Appl. Phys. Lett. 115, 172104 (2019)

https://doi.org/10.1063/1.5125788

Published: October 2019

View article titled, Electrical properties and interface abruptness of AlSiO gate dielectric grown on 000 1 ¯ N-polar and (0001) Ga-polar GaN

Journal Articles

Net negative fixed interface charge for Si₃N₄ and SiO₂ grown in situ on 000-1 N-polar GaN

Islam Sayed, Wenjian Liu, Silvia Chan, Chirag Gupta, Matthew Guidry, Haoran Li, Stacia Keller, Umesh Mishra

Appl. Phys. Lett. 115, 032103 (2019)

https://doi.org/10.1063/1.5111148

Published: July 2019

View article titled, Net negative fixed interface charge for Si3N4 and SiO2 grown in situ on 000-1 N-polar GaN

Journal Articles

Infrared luminescence from N-polar InN quantum dots and thin films grown by metal organic chemical vapor deposition

Caroline E. Reilly, Cory Lund, Shuji Nakamura, Umesh K. Mishra, Steven P. DenBaars, Stacia Keller

Appl. Phys. Lett. 114, 241103 (2019)

https://doi.org/10.1063/1.5109734

Published: June 2019

View article titled, Infrared luminescence from N-polar InN quantum dots and thin films grown by metal organic chemical vapor deposition

Journal Articles

Electron transport in N-polar GaN-based heterostructures

Alexa Rakoski, Sandra Diez, Haoran Li, Stacia Keller, Elaheh Ahmadi, Çağlıyan Kurdak

Appl. Phys. Lett. 114, 162102 (2019)

https://doi.org/10.1063/1.5090233

Published: April 2019

View article titled, Electron transport in N-polar GaN-based heterostructures

Journal Articles

Enhanced mobility in vertically scaled N-polar high-electron-mobility transistors using GaN/InGaN composite channels

Haoran Li, Steven Wienecke, Brian Romanczyk, Elaheh Ahmadi, Matthew Guidry, Xun Zheng, Stacia Keller, Umesh K. Mishra

Appl. Phys. Lett. 112, 073501 (2018)

https://doi.org/10.1063/1.5010944

Published: February 2018

View article titled, Enhanced mobility in vertically scaled N-polar high-electron-mobility transistors using GaN/InGaN composite channels

Journal Articles

Metal-organic chemical vapor deposition of N-polar InN quantum dots and thin films on vicinal GaN

Cory Lund, Massimo Catalano, Luhua Wang, Christian Wurm, Thomas Mates, Moon Kim, Shuji Nakamura, Steven P. DenBaars, Umesh K. Mishra, Stacia Keller

J. Appl. Phys. 123, 055702 (2018)

https://doi.org/10.1063/1.5009904

Published: February 2018

View article titled, Metal-organic chemical vapor deposition of N-polar InN quantum dots and thin films on vicinal GaN

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Topics

Properties of high to ultrahigh Si-doped GaN grown at 550 °C by flow modulated metalorganic chemical vapor deposition

Acceptor traps as the source of holes in p-type N-polar GaN/(AlN/AlGaN) superlattices

Inverted N-polar blue and blue-green light emitting diodes with high power grown by metalorganic chemical vapor deposition

Demonstration of device-quality 60% relaxed In_0.2Ga_0.8N on porous GaN pseudo-substrates grown by PAMBE

Evaluation of linearity at 30 GHz for N-polar GaN deep recess transistors with 10.3 W/mm of output power and 47.4% PAE

Investigation and optimization of N-polar GaN porosification for regrowth of smooth hillocks-free GaN films

2DEGs formed in AlN/GaN HEMT structures with AlN grown at low temperature

A systematic and quantitative analysis of the bulk and interfacial properties of the AlSiO dielectric on N-polar GaN using capacitance–voltage methods

Color-tunable < 10 μ m square InGaN micro-LEDs on compliant GaN-on-porous-GaN pseudo-substrates

Method of growing elastically relaxed crack-free AlGaN on GaN as substrates for ultra-wide bandgap devices using porous GaN

Proposed existence of acceptor-like traps at positive polarization interfaces in p-type III-nitride semiconductors

Growth of strain-relaxed InGaN on micrometer-sized patterned compliant GaN pseudo-substrates

An improved methodology for extracting interface state density at Si₃N₄/GaN

Investigation of nitrogen polar p-type doped GaN/Al_xGa_(1-x)N superlattices for applications in wide-bandgap p-type field effect transistors

Electrical properties and interface abruptness of AlSiO gate dielectric grown on 000 1 ¯ N-polar and (0001) Ga-polar GaN

Net negative fixed interface charge for Si₃N₄ and SiO₂ grown in situ on 000-1 N-polar GaN

Infrared luminescence from N-polar InN quantum dots and thin films grown by metal organic chemical vapor deposition

Electron transport in N-polar GaN-based heterostructures

Enhanced mobility in vertically scaled N-polar high-electron-mobility transistors using GaN/InGaN composite channels

Metal-organic chemical vapor deposition of N-polar InN quantum dots and thin films on vicinal GaN

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