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Journal Articles

Utilizing (Al, Ga)2O3/Ga2O3 superlattices to measure cation vacancy diffusion and vacancy-concentration-dependent diffusion of Al, Sn, and Fe in β-Ga2O3

Nathan D. Rock, Haobo Yang, Brian Eisner, Aviva Levin, Arkka Bhattacharyya, Sriram Krishnamoorthy, Praneeth Ranga, Michael A. Walker, Larry Wang, Ming Kit Cheng, Wei Zhao, Michael A. Scarpulla
Journal: APL Materials
APL Mater. 12, 081101 (2024)
https://doi.org/10.1063/5.0206398
Published: August 2024
View article titled, Utilizing (Al, Ga)<sub>2</sub>O<sub>3</sub>/Ga<sub>2</sub>O<sub>3</sub> superlattices to measure cation vacancy diffusion and vacancy-concentration-dependent diffusion of Al, Sn, and Fe in <em>β</em>-Ga<sub>2</sub>O<sub>3</sub>
Open the PDF for Utilizing (Al, Ga)<sub>2</sub>O<sub>3</sub>/Ga<sub>2</sub>O<sub>3</sub> superlattices to measure cation vacancy diffusion and vacancy-concentration-dependent diffusion of Al, Sn, and Fe in <em>β</em>-Ga<sub>2</sub>O<sub>3</sub> in another window
Journal Articles

Heated-H3PO4 etching of (001) β -Ga2O3

Featured
Steve Rebollo, Takeki Itoh, Sriram Krishnamoorthy, James S. Speck
Journal: Applied Physics Letters
Appl. Phys. Lett. 125, 012102 (2024)
https://doi.org/10.1063/5.0209222
Published: July 2024
View article titled, Heated-H<sub>3</sub>PO<sub>4</sub> etching of (001) β -Ga<sub>2</sub>O<sub>3</sub>
Open the PDF for Heated-H<sub>3</sub>PO<sub>4</sub> etching of (001) β -Ga<sub>2</sub>O<sub>3</sub> in another window
Journal Articles

Kilovolt-class β-Ga2O3 MOSFETs on 1-in. bulk substrates

Carl Peterson, Fikadu Alema, Arkka Bhattacharyya, Ziliang Ling, Saurav Roy, Andrei Osinsky, Sriram Krishnamoorthy
Journal: Applied Physics Letters
Appl. Phys. Lett. 124, 082104 (2024)
https://doi.org/10.1063/5.0187989
Published: February 2024
View article titled, Kilovolt-class <em>β</em>-Ga<sub>2</sub>O<sub>3</sub> MOSFETs on 1-in. bulk substrates
Open the PDF for Kilovolt-class <em>β</em>-Ga<sub>2</sub>O<sub>3</sub> MOSFETs on 1-in. bulk substrates in another window
Includes: Supplementary data
Journal Articles

Erratum: “Ultra-low reverse leakage in large area kilo-volt class β -Ga2O3 trench Schottky barrier diode with high-k dielectric RESURF” [Appl. Phys. Lett. 123 , 243502 (2023)]

Saurav Roy, Benjamin Kostroun, Jacqueline Cooke, Yizheng Liu, Arkka Bhattacharyya, Carl Peterson, Berardi Sensale-Rodriguez, Sriram Krishnamoorthy
Journal: Applied Physics Letters
Appl. Phys. Lett. 124, 029901 (2024)
https://doi.org/10.1063/5.0192873
Published: January 2024
View article titled, Erratum: “Ultra-low reverse leakage in large area kilo-volt class <em>β</em> -Ga<sub>2</sub>O<sub>3</sub> trench Schottky barrier diode with high-k dielectric RESURF” [Appl. Phys. Lett. 123 , 243502 (2023)]
Open the PDF for Erratum: “Ultra-low reverse leakage in large area kilo-volt class <em>β</em> -Ga<sub>2</sub>O<sub>3</sub> trench Schottky barrier diode with high-k dielectric RESURF” [Appl. Phys. Lett. 123 , 243502 (2023)] in another window
Journal Articles

Over 6 μm thick MOCVD-grown low-background carrier density (1015 cm−3) high-mobility (010) β-Ga2O3 drift layers

Editor’s Pick
Arkka Bhattacharyya, Carl Peterson, Kittamet Chanchaiworawit, Saurav Roy, Yizheng Liu, Steve Rebollo, Sriram Krishnamoorthy
Journal: Applied Physics Letters
Appl. Phys. Lett. 124, 010601 (2024)
https://doi.org/10.1063/5.0188773
Published: January 2024
View article titled, Over 6 <em>μ</em>m thick MOCVD-grown low-background carrier density (10<sup>15</sup> cm<sup>−3</sup>) high-mobility (010) <em>β</em>-Ga<sub>2</sub>O<sub>3</sub> drift layers
Open the PDF for Over 6 <em>μ</em>m thick MOCVD-grown low-background carrier density (10<sup>15</sup> cm<sup>−3</sup>) high-mobility (010) <em>β</em>-Ga<sub>2</sub>O<sub>3</sub> drift layers in another window
Includes: Supplementary data
Journal Articles

Ultra-low reverse leakage in large area kilo-volt class β-Ga2O3 trench Schottky barrier diode with high-k dielectric RESURF

Saurav Roy, Benjamin Kostroun, Jacqueline Cooke, Yizheng Liu, Arkka Bhattacharyya, Carl Peterson, Berardi Sensale-Rodriguez, Sriram Krishnamoorthy
Journal: Applied Physics Letters
Appl. Phys. Lett. 123, 243502 (2023)
https://doi.org/10.1063/5.0175674
Published: December 2023
View article titled, Ultra-low reverse leakage in large area kilo-volt class <em>β</em>-Ga<sub>2</sub>O<sub>3</sub> trench Schottky barrier diode with high-k dielectric RESURF
Open the PDF for Ultra-low reverse leakage in large area kilo-volt class <em>β</em>-Ga<sub>2</sub>O<sub>3</sub> trench Schottky barrier diode with high-k dielectric RESURF in another window
Journal Articles

Vertical PtOx/Pt/ β -Ga2O3 Schottky diodes with high permittivity dielectric field plate for low leakage and high breakdown voltage

Editor’s Pick
Esmat Farzana, Saurav Roy, Nolan S. Hendricks, Sriram Krishnamoorthy, James S. Speck
Journal: Applied Physics Letters
Appl. Phys. Lett. 123, 192102 (2023)
https://doi.org/10.1063/5.0171876
Published: November 2023
View article titled, Vertical PtO<sub>x</sub>/Pt/ <em>β</em> -Ga<sub>2</sub>O<sub>3</sub> Schottky diodes with high permittivity dielectric field plate for low leakage and high breakdown voltage
Open the PDF for Vertical PtO<sub>x</sub>/Pt/ <em>β</em> -Ga<sub>2</sub>O<sub>3</sub> Schottky diodes with high permittivity dielectric field plate for low leakage and high breakdown voltage in another window
Journal Articles

TAMM: Tensor algebra for many-body methods

Erdal Mutlu, Ajay Panyala, Nitin Gawande, Abhishek Bagusetty, Jeffrey Glabe, Jinsung Kim, Karol Kowalski, Nicholas P. Bauman, Bo Peng, Himadri Pathak, Jiri Brabec, Sriram Krishnamoorthy
Journal: The Journal of Chemical Physics
J. Chem. Phys. 159, 024801 (2023)
https://doi.org/10.1063/5.0142433
Published: July 2023
View article titled, TAMM: Tensor algebra for many-body methods
Open the PDF for TAMM: Tensor algebra for many-body methods in another window
Journal Articles

2.1 kV (001)- β -Ga2O3 vertical Schottky barrier diode with high-k oxide field plate

Saurav Roy, Arkka Bhattacharyya, Carl Peterson, Sriram Krishnamoorthy
Journal: Applied Physics Letters
Appl. Phys. Lett. 122, 152101 (2023)
https://doi.org/10.1063/5.0137935
Published: April 2023
View article titled, 2.1 kV (001)- <em>β</em> -Ga<sub>2</sub>O<sub>3</sub> vertical Schottky barrier diode with high-k oxide field plate
Open the PDF for 2.1 kV (001)- <em>β</em> -Ga<sub>2</sub>O<sub>3</sub> vertical Schottky barrier diode with high-k oxide field plate in another window
Journal Articles

Enhancing the electron mobility in Si-doped (010) β-Ga2O3 films with low-temperature buffer layers

Featured
Arkka Bhattacharyya, Carl Peterson, Takeki Itoh, Saurav Roy, Jacqueline Cooke, Steve Rebollo, Praneeth Ranga, Berardi Sensale-Rodriguez, Sriram Krishnamoorthy
Journal: APL Materials
APL Mater. 11, 021110 (2023)
https://doi.org/10.1063/5.0137666
Published: February 2023
View article titled, Enhancing the electron mobility in Si-doped (010) β-Ga<sub>2</sub>O<sub>3</sub> films with low-temperature buffer layers
Open the PDF for Enhancing the electron mobility in Si-doped (010) β-Ga<sub>2</sub>O<sub>3</sub> films with low-temperature buffer layers in another window
Book Chapter

Delta-Doped Transistors with β-Ga2O3

Series: AIPP Books, Principles
Published: February 2023
10.1063/9780735425033_011
EISBN: 978-0-7354-2503-3
ISBN: 978-0-7354-2500-2
Open the PDF for Delta-Doped Transistors with β-Ga<sub>2</sub>O<sub>3</sub> in another window
Journal Articles

Sympetalous defects in metalorganic vapor phase epitaxy (MOVPE)-grown homoepitaxial β-Ga2O3 films

Jacqueline Cooke, Praneeth Ranga, Arkka Bhattacharyya, Xueling Cheng, Yunshan Wang, Sriram Krishnamoorthy, Michael A. Scarpulla, Berardi Sensale-Rodriguez
Journal: Journal of Vacuum Science & Technology A
J. Vac. Sci. Technol. A 41, 013406 (2023)
https://doi.org/10.1116/6.0002303
Published: December 2022
View article titled, Sympetalous defects in metalorganic vapor phase epitaxy (MOVPE)-grown homoepitaxial β-Ga<sub>2</sub>O<sub>3</sub> films
Open the PDF for Sympetalous defects in metalorganic vapor phase epitaxy (MOVPE)-grown homoepitaxial β-Ga<sub>2</sub>O<sub>3</sub> films in another window
Includes: Supplementary data
Journal Articles

Oxidized metal Schottky contact with high-κ dielectric field plate for low-loss high-power vertical β-Ga2O3 Schottky diodes

Editor’s Pick
Esmat Farzana, Arkka Bhattacharyya, Nolan S. Hendricks, Takeki Itoh, Sriram Krishnamoorthy, James S. Speck
Journal: APL Materials
APL Mater. 10, 111104 (2022)
https://doi.org/10.1063/5.0121903
Published: November 2022
View article titled, Oxidized metal Schottky contact with high-κ dielectric field plate for low-loss high-power vertical β-Ga<sub>2</sub>O<sub>3</sub> Schottky diodes
Open the PDF for Oxidized metal Schottky contact with high-κ dielectric field plate for low-loss high-power vertical β-Ga<sub>2</sub>O<sub>3</sub> Schottky diodes in another window
Journal Articles

On the terahertz response of metal-gratings on anisotropic dielectric substrates and its prospective application for anisotropic refractive index characterization

Wei Jia, Minhan Lou, Prashanth Gopalan, Arkka Bhattacharyya, Sriram Krishnamoorthy, Berardi Sensale-Rodriguez
Journal: Journal of Applied Physics
J. Appl. Phys. 131, 193101 (2022)
https://doi.org/10.1063/5.0078057
Published: May 2022
View article titled, On the terahertz response of metal-gratings on anisotropic dielectric substrates and its prospective application for anisotropic refractive index characterization
Open the PDF for On the terahertz response of metal-gratings on anisotropic dielectric substrates and its prospective application for anisotropic refractive index characterization in another window
Includes: Supplementary data
Journal Articles

Alloyed β-(AlxGa1−x)2O3 bulk Czochralski single β-(Al0.1Ga0.9)2O3 and polycrystals β-(Al0.33Ga0.66)2O3, β-(Al0.5Ga0.5)2O3), and property trends

Jani Jesenovec, Benjamin Dutton, Nicholas Stone-Weiss, Adrian Chmielewski, Muad Saleh, Carl Peterson, Nasim Alem, Sriram Krishnamoorthy, John S. McCloy
Journal: Journal of Applied Physics
J. Appl. Phys. 131, 155702 (2022)
https://doi.org/10.1063/5.0073502
Published: April 2022
View article titled, Alloyed β-(Al<em><sub>x</sub></em>Ga<sub>1−<em>x</em></sub>)<sub>2</sub>O<sub>3</sub> bulk Czochralski single β-(Al<sub>0.1</sub>Ga<sub>0.9</sub>)<sub>2</sub>O<sub>3</sub> and polycrystals β-(Al<sub>0.33</sub>Ga<sub>0.66</sub>)<sub>2</sub>O<sub>3</sub>, β-(Al<sub>0.5</sub>Ga<sub>0.5</sub>)<sub>2</sub>O<sub>3</sub>), and property trends
Open the PDF for Alloyed β-(Al<em><sub>x</sub></em>Ga<sub>1−<em>x</em></sub>)<sub>2</sub>O<sub>3</sub> bulk Czochralski single β-(Al<sub>0.1</sub>Ga<sub>0.9</sub>)<sub>2</sub>O<sub>3</sub> and polycrystals β-(Al<sub>0.33</sub>Ga<sub>0.66</sub>)<sub>2</sub>O<sub>3</sub>, β-(Al<sub>0.5</sub>Ga<sub>0.5</sub>)<sub>2</sub>O<sub>3</sub>), and property trends in another window
Includes: Supplementary data
Journal Articles

Electronic and ionic conductivity in β-Ga2O3 single crystals

Leila Ghadbeigi, Rujun Sun, Jani Jesenovec, Arkka Bhattacharyya, John McCloy, Sriram Krishnamoorthy, Michael A. Scarpulla, Berardi Sensale-Rodriguez
Journal: Journal of Applied Physics
J. Appl. Phys. 131, 085102 (2022)
https://doi.org/10.1063/5.0073395
Published: February 2022
View article titled, Electronic and ionic conductivity in β-Ga<sub>2</sub>O<sub>3</sub> single crystals
Open the PDF for Electronic and ionic conductivity in β-Ga<sub>2</sub>O<sub>3</sub> single crystals in another window
Journal Articles

β-Gallium oxide power electronics

Featured
Andrew J. Green, James Speck, Grace Xing, Peter Moens, Fredrik Allerstam, Krister Gumaelius, Thomas Neyer, Andrea Arias-Purdue, Vivek Mehrotra, Akito Kuramata, Kohei Sasaki, Shinya Watanabe, Kimiyoshi Koshi, John Blevins, Oliver Bierwagen, Sriram Krishnamoorthy, Kevin Leedy, Aaron R. Arehart, Adam T. Neal, Shin Mou, Steven A. Ringel, Avinash Kumar, Ankit Sharma, Krishnendu Ghosh, Uttam Singisetti, Wenshen Li, Kelson Chabak, Kyle Liddy, Ahmad Islam, Siddharth Rajan, Samuel Graham, Sukwon Choi, Zhe Cheng, Masataka Higashiwaki
Journal: APL Materials
APL Mater. 10, 029201 (2022)
https://doi.org/10.1063/5.0060327
Published: February 2022
View article titled, β-Gallium oxide power electronics
Open the PDF for β-Gallium oxide power electronics in another window
Journal Articles

N-type doping of low-pressure chemical vapor deposition grown β-Ga2O3 thin films using solid-source germanium

Praneeth Ranga, Arkka Bhattacharyya, Luisa Whittaker-Brooks, Michael A. Scarpulla, Sriram Krishnamoorthy
Journal: Journal of Vacuum Science & Technology A
J. Vac. Sci. Technol. A 39, 030404 (2021)
https://doi.org/10.1116/6.0001004
Published: April 2021
View article titled, N-type doping of low-pressure chemical vapor deposition grown β-Ga<sub>2</sub>O<sub>3</sub> thin films using solid-source germanium
Open the PDF for N-type doping of low-pressure chemical vapor deposition grown β-Ga<sub>2</sub>O<sub>3</sub> thin films using solid-source germanium in another window
Journal Articles

Impurity band conduction in Si-doped β -Ga2O3 films

Anil Kumar Rajapitamahuni, Laxman Raju Thoutam, Praneeth Ranga, Sriram Krishnamoorthy, Bharat Jalan
Journal: Applied Physics Letters
Appl. Phys. Lett. 118, 072105 (2021)
https://doi.org/10.1063/5.0031481
Published: February 2021
View article titled, Impurity band conduction in Si-doped <em>β</em> -Ga<sub>2</sub>O<sub>3</sub> films
Open the PDF for Impurity band conduction in Si-doped <em>β</em> -Ga<sub>2</sub>O<sub>3</sub> films in another window
Includes: Supplementary data
Journal Articles

The anisotropic quasi-static permittivity of single-crystal β -Ga2O3 measured by terahertz spectroscopy

Editor’s Pick
Prashanth Gopalan, Sean Knight, Ashish Chanana, Megan Stokey, Praneeth Ranga, Michael A. Scarpulla, Sriram Krishnamoorthy, Vanya Darakchieva, Zbigniew Galazka, Klaus Irmscher, Andreas Fiedler, Steve Blair, Mathias Schubert, Berardi Sensale-Rodriguez
Journal: Applied Physics Letters
Appl. Phys. Lett. 117, 252103 (2020)
https://doi.org/10.1063/5.0031464
Published: December 2020
View article titled, The anisotropic quasi-static permittivity of single-crystal <em>β</em> -Ga<sub>2</sub>O<sub>3</sub> measured by terahertz spectroscopy
Open the PDF for The anisotropic quasi-static permittivity of single-crystal <em>β</em> -Ga<sub>2</sub>O<sub>3</sub> measured by terahertz spectroscopy in another window
Includes: Supplementary data