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Journal Articles

Membrane-electrode junction properties for optimum potentiometric hydrogen sensor response

Kyeong Joon Jo, Soon-Won Jung, Ji Eun Jung, Ga-Eun Lee, Seong-Cheol Kim, Seung-Yun Lee
Journal: Journal of Vacuum Science & Technology B
J. Vac. Sci. Technol. B 42, 055001 (2024)
https://doi.org/10.1116/6.0003829
Published: August 2024
View articletitled, Membrane-electrode junction properties for optimum potentiometric hydrogen sensor response
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Journal Articles

Electrochemical bulk and film-type oxygen sensors: Strategies for detecting extremely low concentration in hydrogen environments

Soon-Won Jung, Min Hyuk Chang, Kyeong-Joon Jo, Mi-Hee Jung, Seung-Yun Lee
Journal: Journal of Vacuum Science & Technology B
J. Vac. Sci. Technol. B 41, 052201 (2023)
https://doi.org/10.1116/6.0002631
Published: July 2023
View articletitled, Electrochemical bulk and film-type oxygen sensors: Strategies for detecting extremely low concentration in hydrogen environments
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Journal Articles

Flexible nonvolatile memory transistors using indium gallium zinc oxide-channel and ferroelectric polymer poly(vinylidene fluoride-co-trifluoroethylene) fabricated on elastomer substrate

Soon-Won Jung, Jae Bon Koo, Chan Woo Park, Bock Soon Na, Ji-Young Oh, Sang Seok Lee, Kyung-Wan Koo
Journal: Journal of Vacuum Science & Technology B
J. Vac. Sci. Technol. B 33, 051201 (2015)
https://doi.org/10.1116/1.4927367
Published: July 2015
View articletitled, Flexible nonvolatile memory transistors using indium gallium zinc oxide-channel and ferroelectric polymer poly(vinylidene fluoride-co-trifluoroethylene) fabricated on elastomer substrate
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Journal Articles

Thickness modulation effects of Al2O3 capping layers on device performance for the top-gate thin-film transistors using solution-processed poly(4-vinyl phenol)/Zn-Sn-O gate stacks

Kyeong-Ah Kim, Jun-Yong Bak, Sung-Min Yoon, Seong Jip Kim, Sunho Jeong, Youngmin Choi, Soon-Won Jung
Journal: Journal of Vacuum Science & Technology B
J. Vac. Sci. Technol. B 33, 031202 (2015)
https://doi.org/10.1116/1.4916021
Published: March 2015
View articletitled, Thickness modulation effects of Al2O3 capping layers on device performance for the top-gate thin-film transistors using solution-processed poly(4-vinyl phenol)/Zn-Sn-O gate stacks
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Journal Articles

Top-gate staggered poly(3,3″′-dialkyl-quarterthiophene) organic thin-film transistors with reverse-offset-printed silver source/drain electrodes

Minseok Kim, Jae Bon Koo, Kang-Jun Baeg, Soon-Won Jung, Byeong-Kwon Ju, In-Kyu You
Journal: Applied Physics Letters
Appl. Phys. Lett. 101, 133306 (2012)
https://doi.org/10.1063/1.4755878
Published: September 2012
View articletitled, Top-gate staggered poly(3,3″′-dialkyl-quarterthiophene) organic thin-film transistors with reverse-offset-printed silver source/drain electrodes
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Journal Articles

Low-voltage-operated top-gate polymer thin-film transistors with high capacitance poly(vinylidene fluoride-trifluoroethylene)/poly(methyl methacrylate) dielectrics

Soon-Won Jung, Kang-Jun Baeg, Sung-Min Yoon, In-Kyu You, Jong-Keun Lee, Young-Soon Kim, Yong-Young Noh
Journal: Journal of Applied Physics
J. Appl. Phys. 108, 102810 (2010)
https://doi.org/10.1063/1.3511697
Published: November 2010
View articletitled, Low-voltage-operated top-gate polymer thin-film transistors with high capacitance poly(vinylidene fluoride-trifluoroethylene)/poly(methyl methacrylate) dielectrics
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Journal Articles

Impact of interface controlling layer of Al 2 O 3 for improving the retention behaviors of In–Ga–Zn oxide-based ferroelectric memory transistor

Sung-Min Yoon, Shin-Hyuk Yang, Soon-Won Jung, Chun-Won Byun, Sang-Hee Ko Park, Chi-Sun Hwang, Gwang-Geun Lee, Eisuke Tokumitsu, Hiroshi Ishiwara
Journal: Applied Physics Letters
Appl. Phys. Lett. 96, 232903 (2010)
https://doi.org/10.1063/1.3452339
Published: June 2010
View articletitled, Impact of interface controlling layer of Al 2 O 3 for improving the retention behaviors of In–Ga–Zn oxide-based ferroelectric memory transistor
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Journal Articles

Nonvolatile programmable metallization cell memory switching element based on Ag-doped SbTe solid electrolyte

Young Sam Park, Seung Yun Lee, Sung Min Yoon, Soon Won Jung, Byoung Gon Yu, Soo Jin Lee, Soon Gil Yoon
Journal: Applied Physics Letters
Appl. Phys. Lett. 91, 162107 (2007)
https://doi.org/10.1063/1.2789663
Published: October 2007
View articletitled, Nonvolatile programmable metallization cell memory switching element based on Ag-doped SbTe solid electrolyte
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