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Soo-Hyun Kim
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Journal Articles

Layer-by-layer NH3 plasma treatment for area-selective atomic layer deposition of high-quality SiO2 thin films

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Sanghun Lee, Seunggi Seo, Tae Hyun Kim, Hwi Yoon, Seonyeong Park, Seunggyu Na, Jeongwoo Seo, Soo-Hyun Kim, Seung-min Chung, Hyungjun Kim
Journal: The Journal of Chemical Physics
J. Chem. Phys. 162, 124203 (2025)
https://doi.org/10.1063/5.0257779
Published: March 2025
View articletitled, Layer-by-layer NH3 plasma treatment for area-selective atomic layer deposition of high-quality SiO2 thin films
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Journal Articles

Atomic layer deposition of high-quality Pt thin film as an alternative interconnect replacing Cu

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Seung-Min Han, Dip K. Nandi, Yong-Hwan Joo, Toshiyuki Shigetomi, Kazuharu Suzuki, Shunichi Nabeya, Ryosuke Harada, Soo-Hyun Kim
Journal: Journal of Vacuum Science & Technology A
J. Vac. Sci. Technol. A 38, 032404 (2020)
https://doi.org/10.1116/1.5134696
Published: March 2020
View articletitled, Atomic layer deposition of high-quality Pt thin film as an alternative interconnect replacing Cu
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Journal Articles

Evaluation of grating realized via pulse current electroplating combined with atomic layer deposition as an x-ray grating interferometer

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Tae-Eun Song, Seho Lee, Hee Han, Soonyoung Jung, Soo-Hyun Kim, Min Jun Kim, Seung Wook Lee, Chi Won Ahn
Journal: Journal of Vacuum Science & Technology A
J. Vac. Sci. Technol. A 37, 030903 (2019)
https://doi.org/10.1116/1.5080954
Published: April 2019
View articletitled, Evaluation of grating realized via pulse current electroplating combined with atomic layer deposition as an x-ray grating interferometer
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Journal Articles

Comparative study on growth characteristics and electrical properties of ZrO2 films grown using pulsed plasma-enhanced chemical vapor deposition and plasma-enhanced atomic layer deposition for oxide thin film transistors

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Hanearl Jung, Il-Kwon Oh, Seungmin Yeo, Hyungjun Kim, Su Jeong Lee, Yun Cheol Kim, Jae-Min Myoung, Soo-Hyun Kim, Jun Hyung Lim, Sunhee Lee
Journal: Journal of Vacuum Science & Technology A
J. Vac. Sci. Technol. A 35, 031510 (2017)
https://doi.org/10.1116/1.4982224
Published: April 2017
View articletitled, Comparative study on growth characteristics and electrical properties of ZrO2 films grown using pulsed plasma-enhanced chemical vapor deposition and plasma-enhanced atomic layer deposition for oxide thin film transistors
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Includes: Supplementary data
Journal Articles

Fabrication of single-phase SnS film by H2 annealing of amorphous SnSx prepared by atomic layer deposition

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Byeonghyeon Jang, Seungmin Yeo, Hyungjun Kim, Byungha Shin, Soo-Hyun Kim
Journal: Journal of Vacuum Science & Technology A
J. Vac. Sci. Technol. A 35, 031506 (2017)
https://doi.org/10.1116/1.4978892
Published: March 2017
View articletitled, Fabrication of single-phase SnS film by H2 annealing of amorphous SnSx prepared by atomic layer deposition
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Includes: Supplementary data
Journal Articles

Atomic layer deposited nanocrystalline tungsten carbides thin films as a metal gate and diffusion barrier for Cu metallization

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Jun Beom Kim, Soo-Hyun Kim, Won Seok Han, Do-Joong Lee
Journal: Journal of Vacuum Science & Technology A
J. Vac. Sci. Technol. A 34, 041504 (2016)
https://doi.org/10.1116/1.4951691
Published: May 2016
View articletitled, Atomic layer deposited nanocrystalline tungsten carbides thin films as a metal gate and diffusion barrier for Cu metallization
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Journal Articles

Plasma-free atomic layer deposition of Ru thin films using H2 molecules as a nonoxidizing reactant

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Seung-Joon Lee, Soo-Hyun Kim, Masayuki Saito, Kazuharu Suzuki, Shunichi Nabeya, Jeongyeop Lee, Sangdeok Kim, Seungjin Yeom, Do-Joong Lee
Journal: Journal of Vacuum Science & Technology A
J. Vac. Sci. Technol. A 34, 031509 (2016)
https://doi.org/10.1116/1.4946755
Published: April 2016
View articletitled, Plasma-free atomic layer deposition of Ru thin films using H2 molecules as a nonoxidizing reactant
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Journal Articles

Fluctuation conductivity of single-crystalline BaFe 1.8 Co 0.2 As 2 in the critical region

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Soo Hyun Kim, Chang Ho Choi, Myung-Hwa Jung, Jung-Bum Yoon, Young-Hun Jo, X. F. Wang, X. H. Chen, X. L. Wang, Sung-Ik Lee, Ki-Young Choi
Journal: Journal of Applied Physics
J. Appl. Phys. 108, 063916 (2010)
https://doi.org/10.1063/1.3478716
Published: September 2010
View articletitled, Fluctuation conductivity of single-crystalline BaFe 1.8 Co 0.2 As 2 in the critical region
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Journal Articles

Nonvolatile memory characteristics of atomic layer deposited Ru nanocrystals with a SiO 2 / Al 2 O 3 bilayered tunnel barrier

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Do-Joong Lee, Sung-Soo Yim, Ki-Su Kim, Soo-Hyun Kim, Ki-Bum Kim
Journal: Journal of Applied Physics
J. Appl. Phys. 107, 013707 (2010)
https://doi.org/10.1063/1.3275346
Published: January 2010
View articletitled, Nonvolatile memory characteristics of atomic layer deposited Ru nanocrystals with a SiO 2 / Al 2 O 3 bilayered tunnel barrier
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Journal Articles

Nucleation kinetics of Ru on silicon oxide and silicon nitride surfaces deposited by atomic layer deposition

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Sung-Soo Yim, Do-Joong Lee, Ki-Su Kim, Soo-Hyun Kim, Tae-Sik Yoon, Ki-Bum Kim
Journal: Journal of Applied Physics
J. Appl. Phys. 103, 113509 (2008)
https://doi.org/10.1063/1.2938052
Published: June 2008
View articletitled, Nucleation kinetics of Ru on silicon oxide and silicon nitride surfaces deposited by atomic layer deposition
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Journal Articles

Development of a Focused‐Beam Ellipsometer Based on a New Principle

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Sang‐Heon Ye, Yoon Keun Kwak, Soo Hyun Kim, Hyun Mo Cho, Yong Jai Cho, Won Chegal
Journal: AIP Conference Proceedings
AIP Conf. Proc. 931, 69–73 (2007)
https://doi.org/10.1063/1.2799439
Published: September 2007
View articletitled, Development of a Focused‐Beam Ellipsometer Based on a New Principle
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Journal Articles

Effects of phase of underlying W film on chemical vapor deposited-W film growth and applications to contact-plug and bit line processes for memory devices

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Soo-Hyun Kim, Jeong-Tae Kim, Nohjung Kwak, Jinwoong Kim, Tae-Sik Yoon, Hyunchul Sohn
Journal: Journal of Vacuum Science & Technology B
J. Vac. Sci. Technol. B 25, 1574–1580 (2007)
https://doi.org/10.1116/1.2770739
Published: August 2007
View articletitled, Effects of phase of underlying W film on chemical vapor deposited-W film growth and applications to contact-plug and bit line processes for memory devices
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Journal Articles

An experimental investigation on the switching reliability of a phase change memory device with an oxidized TiN electrode

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Dae-Hwan Kang, In Ho Kim, Jeung-hyun Jeong, Byung-ki Cheong, Dong-Ho Ahn, Dongbok Lee, Hyun-Mi Kim, Ki-Bum Kim, Soo-Hyun Kim
Journal: Journal of Applied Physics
J. Appl. Phys. 100, 054506 (2006)
https://doi.org/10.1063/1.2338130
Published: September 2006
View articletitled, An experimental investigation on the switching reliability of a phase change memory device with an oxidized TiN electrode
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Journal Articles

Characteristics of the nanoscale titanium film deposited by plasma enhanced chemical vapor deposition and comparison of the film properties with the film by physical vapor deposition

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Joo Wan Lee, Soo-Hyun Kim, No Jung Kwak, Young Jin Lee, Hyun Chul Sohn, Jin Woong Kim, Ho-Jung Sun
Journal: Journal of Vacuum Science & Technology B
J. Vac. Sci. Technol. B 24, 1460–1463 (2006)
https://doi.org/10.1116/1.2201458
Published: May 2006
View articletitled, Characteristics of the nanoscale titanium film deposited by plasma enhanced chemical vapor deposition and comparison of the film properties with the film by physical vapor deposition
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Journal Articles

Epitaxial growth of CoSi 2 in a decanano contact opening on a (100) silicon substrate

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Ho-Jung Sun, Young-Jin Lee, Soo-Hyun Kim, Joo-Wan Lee, Ja-Chun Ku, Hyun-Chul Sohn, Jin-Woong Kim, Uisik Kim, Nak-Kyun Sung
Journal: Applied Physics Letters
Appl. Phys. Lett. 86, 221919 (2005)
https://doi.org/10.1063/1.1943500
Published: May 2005
View articletitled, Epitaxial growth of CoSi 2 in a decanano contact opening on a (100) silicon substrate
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Journal Articles

Nanoscale fabrication of a single multiwalled carbon nanotube attached atomic force microscope tip using an electric field

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Hyung Woo Lee, Soo Hyun Kim, Yoon Keun Kwak, Chang Soo Han
Journal: Review of Scientific Instruments
Rev. Sci. Instrum. 76, 046108 (2005)
https://doi.org/10.1063/1.1891445
Published: April 2005
View articletitled, Nanoscale fabrication of a single multiwalled carbon nanotube attached atomic force microscope tip using an electric field
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Journal Articles

Atomic-layer-deposited WN x C y thin films as diffusion barrier for copper metallization

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Soo-Hyun Kim, Su Suk Oh, Ki-Bum Kim, Dae-Hwan Kang, Wei-Min Li, Suvi Haukka, Marko Tuominen
Journal: Applied Physics Letters
Appl. Phys. Lett. 82, 4486–4488 (2003)
https://doi.org/10.1063/1.1585111
Published: June 2003
View articletitled, Atomic-layer-deposited WN x C y thin films as diffusion barrier for copper metallization
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Journal Articles

Development of a piezoelectric actuator using a three-dimensional bridge-type hinge mechanism

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Jun Hyung Kim, Soo Hyun Kim, Yoon Keun Kwak
Journal: Review of Scientific Instruments
Rev. Sci. Instrum. 74, 2918–2924 (2003)
https://doi.org/10.1063/1.1569411
Published: May 2003
View articletitled, Development of a piezoelectric actuator using a three-dimensional bridge-type hinge mechanism
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Journal Articles

Multilayer diffusion barrier for copper metallization using a thin interlayer metal ( M = Ru , Cr, and Zr) between two TiN films

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Soo-Hyun Kim, Ki Tae Nam, Arindom Datta, Hyun-Mi Kim, Ki-Bum Kim, Dae-Hwan Kang
Journal: Journal of Vacuum Science & Technology B
J. Vac. Sci. Technol. B 21, 804–813 (2003)
https://doi.org/10.1116/1.1562645
Published: March 2003
View articletitled, Multilayer diffusion barrier for copper metallization using a thin interlayer metal ( M = Ru , Cr, and Zr) between two TiN films
Open the PDF for Multilayer diffusion barrier for copper metallization using a thin interlayer metal ( M = Ru , Cr, and Zr) between two TiN films in another window
Journal Articles

Failure mechanism of a multilayer (TiN/Al/TiN) diffusion barrier between copper and silicon

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Soo-Hyun Kim, Ki Tae Nam, Arindom Datta, Ki-Bum Kim
Journal: Journal of Applied Physics
J. Appl. Phys. 92, 5512–5519 (2002)
https://doi.org/10.1063/1.1509102
Published: November 2002
View articletitled, Failure mechanism of a multilayer (TiN/Al/TiN) diffusion barrier between copper and silicon
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