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Journal Articles

Carbon doping induced Ge local structure change in as-deposited Ge₂Sb₂Te₅ film by EXAFS and Raman spectrum

Tao Li, Liangcai Wu, Xinglong Ji, Yonghui Zheng, Guangyu Liu, Zhitang Song, Jianjun Shi, Min Zhu, Sannian Song, Songlin Feng

AIP Advances 8, 025201 (2018)

https://doi.org/10.1063/1.5020614

Published: February 2018

View articletitled, Carbon doping induced Ge local structure change in as-deposited Ge2Sb2Te5 film by EXAFS and Raman spectrum

Journal Articles

Threshold switching in SiGeAsTeN chalcogenide glass prepared by As ion implantation into sputtered SiGeTeN film

Guangyu Liu, Liangcai Wu, Zhitang Song, Yan Liu, Tao Li, Sifan Zhang, Sannian Song, Songlin Feng

Appl. Phys. Lett. 111, 252102 (2017)

https://doi.org/10.1063/1.5008927

Published: December 2017

View articletitled, Threshold switching in SiGeAsTeN chalcogenide glass prepared by As ion implantation into sputtered SiGeTeN film

Journal Articles

A candidate Zr-doped Sb₂Te alloy for phase change memory application

Yonghui Zheng, Yan Cheng, Min Zhu, Xinglong Ji, Qing Wang, Sannian Song, Zhitang Song, Weili Liu, Songlin Feng

Appl. Phys. Lett. 108, 052107 (2016)

https://doi.org/10.1063/1.4941418

Published: February 2016

View articletitled, A candidate Zr-doped Sb2Te alloy for phase change memory application

Journal Articles

Cr-doped Ge₂Sb₂Te₅ for ultra-long data retention phase change memory

Qing Wang, Bo Liu, Yangyang Xia, Yonghui Zheng, Ruru Huo, Qi Zhang, Sannian Song, Yan Cheng, Zhitang Song, Songlin Feng

Appl. Phys. Lett. 107, 222101 (2015)

https://doi.org/10.1063/1.4936847

Published: November 2015

View articletitled, Cr-doped Ge2Sb2Te5 for ultra-long data retention phase change memory

Journal Articles

Vanadium doped Sb₂Te₃ material with modified crystallization mechanism for phase-change memory application

Xinglong Ji, Liangcai Wu, Liangliang Cao, Min Zhu, Feng Rao, Yonghui Zheng, Wangyang Zhou, Zhitang Song, Songlin Feng

Appl. Phys. Lett. 106, 243103 (2015)

https://doi.org/10.1063/1.4922505

Published: June 2015

View articletitled, Vanadium doped Sb2Te3 material with modified crystallization mechanism for phase-change memory application

Journal Articles

High thermal stability Sb₃Te-TiN₂ material for phase change memory application

Xinglong Ji, Liangcai Wu, Wangyang Zhou, Min Zhu, Feng Rao, Zhitang Song, Liangliang Cao, Songlin Feng

Appl. Phys. Lett. 106, 023118 (2015)

https://doi.org/10.1063/1.4905551

Published: January 2015

View articletitled, High thermal stability Sb3Te-TiN2 material for phase change memory application

Journal Articles

High thermal stability and low density variation of carbon-doped Ge₂Sb₂Te₅ for phase-change memory application

Wangyang Zhou, Liangcai Wu, Xilin Zhou, Feng Rao, Zhitang Song, Dongning Yao, Weijun Yin, Sannian Song, Bo Liu, Bo Qian, Songlin Feng

Appl. Phys. Lett. 105, 243113 (2014)

https://doi.org/10.1063/1.4904832

Published: December 2014

View articletitled, High thermal stability and low density variation of carbon-doped Ge2Sb2Te5 for phase-change memory application

Journal Articles

Investigation of Al-Sb-Se alloy for long data retention and low power consumption phase change memory application

Zhonghua Zhang, Yifeng Gu, Sannian Song, Zhitang Song, Yan Cheng, Bo Liu, Yueqin Zhu, Dong Zhou, Songlin Feng

J. Appl. Phys. 116, 074304 (2014)

https://doi.org/10.1063/1.4891731

Published: August 2014

View articletitled, Investigation of Al-Sb-Se alloy for long data retention and low power consumption phase change memory application

Journal Articles

Study on the nitrogen-doped W-Sb-Te material for phase change memory application

Kun Ren, Mengjiao Xia, Feng Rao, Zhitang Song, Keyuan Ding, Xinglong Ji, Liangcai Wu, Bo Liu, Songlin Feng

Appl. Phys. Lett. 104, 173102 (2014)

https://doi.org/10.1063/1.4874262

Published: April 2014

View articletitled, Study on the nitrogen-doped W-Sb-Te material for phase change memory application

Journal Articles

Uniform Ti-doped Sb₂Te₃ materials for high-speed phase change memory applications

Min Zhu, Liangcai Wu, Feng Rao, Zhitang Song, Kun Ren, Xinglong Ji, Sannian Song, Dongning Yao, Songlin Feng

Appl. Phys. Lett. 104, 053119 (2014)

https://doi.org/10.1063/1.4863430

Published: February 2014

View articletitled, Uniform Ti-doped Sb2Te3 materials for high-speed phase change memory applications

Journal Articles

Characterization of Cu doping on GeTe for phase change memory application

Zhonghua Zhang, Cheng Peng, Sannian Song, Zhitang Song, Yan Cheng, Kun Ren, Xiaoyun Li, Feng Rao, Bo Liu, Songlin Feng

J. Appl. Phys. 114, 244311 (2013)

https://doi.org/10.1063/1.4851757

Published: December 2013

View articletitled, Characterization of Cu doping on GeTe for phase change memory application

Journal Articles

Study on the thermal stability improvement of GeTe by Al doping

Kun Ren, Feng Rao, Zhitang Song, Cheng Peng, Juntao Li, Liangcai Wu, Bo Liu, Songlin Feng

Appl. Phys. Lett. 103, 093111 (2013)

https://doi.org/10.1063/1.4819839

Published: August 2013

View articletitled, Study on the thermal stability improvement of GeTe by Al doping

Journal Articles

Phase transition characteristics of Al-Sb phase change materials for phase change memory application

Xilin Zhou, Liangcai Wu, Zhitang Song, Feng Rao, Kun Ren, Cheng Peng, Sannian Song, Bo Liu, Ling Xu, Songlin Feng

Appl. Phys. Lett. 103, 072114 (2013)

https://doi.org/10.1063/1.4818662

Published: August 2013

View articletitled, Phase transition characteristics of Al-Sb phase change materials for phase change memory application

Journal Articles

Investigation of Al doping on Ge₅₅Te₄₅ for phase change memory application

Kun Ren, Feng Rao, Zhitang Song, Liangcai Wu, Mengjiao Xia, Bo Liu, Songlin Feng

J. Appl. Phys. 113, 234312 (2013)

https://doi.org/10.1063/1.4811683

Published: June 2013

View articletitled, Investigation of Al doping on Ge55Te45 for phase change memory application

Journal Articles

Study on the impact of the initialization process on the phase change memory

Kun Ren, Feng Rao, Zhitang Song, Shilong Lv, Min Zhu, Liangcai Wu, Bo Liu, Songlin Feng

Appl. Phys. Lett. 102, 213503 (2013)

https://doi.org/10.1063/1.4808347

Published: May 2013

View articletitled, Study on the impact of the initialization process on the phase change memory

Journal Articles

Phase-change material Ge_0.61Sb₂Te for application in high-speed phase change random access memory

Yifeng Gu, Sannian Song, Zhitang Song, Suyuan Bai, Yan Cheng, Zhonghua Zhang, Bo Liu, Songlin Feng

Appl. Phys. Lett. 102, 103110 (2013)

https://doi.org/10.1063/1.4795595

Published: March 2013

View articletitled, Phase-change material Ge0.61Sb2Te for application in high-speed phase change random access memory

Includes: Supplementary data

Journal Articles

Carbon-doped Ge₂Sb₂Te₅ phase change material: A candidate for high-density phase change memory application

Xilin Zhou, Liangcai Wu, Zhitang Song, Feng Rao, Min Zhu, Cheng Peng, Dongning Yao, Sannian Song, Bo Liu, Songlin Feng

Appl. Phys. Lett. 101, 142104 (2012)

https://doi.org/10.1063/1.4757137

Published: October 2012

View articletitled, Carbon-doped Ge2Sb2Te5 phase change material: A candidate for high-density phase change memory application

Journal Articles

Ti₁₀Sb₆₀Te₃₀ for phase change memory with high-temperature data retention and rapid crystallization speed

Min Zhu, Liangcai Wu, Zhitang Song, Feng Rao, Daolin Cai, Cheng Peng, Xilin Zhou, Kun Ren, Sannian Song, Bo liu, Songlin Feng

Appl. Phys. Lett. 100, 122101 (2012)

https://doi.org/10.1063/1.3695036

Published: March 2012

View articletitled, Ti10Sb60Te30 for phase change memory with high-temperature data retention and rapid crystallization speed

Journal Articles

Si_xSb₂Te materials with stable phase for phase change random access memory applications

Yifeng Gu, Sannian Song, Zhitang Song, Yan Cheng, Xiaofeng Du, Bo Liu, Songlin Feng

J. Appl. Phys. 111, 054319 (2012)

https://doi.org/10.1063/1.3693557

Published: March 2012

View articletitled, SixSb2Te materials with stable phase for phase change random access memory applications

Journal Articles

Pseudobinary Al₂Te₃-Sb₂Te₃ material for high speed phase change memory application

Kun Ren, Feng Rao, Zhitang Song, Shilong Lv, Yan Cheng, Liangcai Wu, Cheng Peng, Xilin Zhou, Mengjiao Xia, Bo Liu, Songlin Feng

Appl. Phys. Lett. 100, 052105 (2012)

https://doi.org/10.1063/1.3680580

Published: January 2012

View articletitled, Pseudobinary Al2Te3-Sb2Te3 material for high speed phase change memory application

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Carbon doping induced Ge local structure change in as-deposited Ge₂Sb₂Te₅ film by EXAFS and Raman spectrum

Threshold switching in SiGeAsTeN chalcogenide glass prepared by As ion implantation into sputtered SiGeTeN film

A candidate Zr-doped Sb₂Te alloy for phase change memory application

Cr-doped Ge₂Sb₂Te₅ for ultra-long data retention phase change memory

Vanadium doped Sb₂Te₃ material with modified crystallization mechanism for phase-change memory application

High thermal stability Sb₃Te-TiN₂ material for phase change memory application

High thermal stability and low density variation of carbon-doped Ge₂Sb₂Te₅ for phase-change memory application

Investigation of Al-Sb-Se alloy for long data retention and low power consumption phase change memory application

Study on the nitrogen-doped W-Sb-Te material for phase change memory application

Uniform Ti-doped Sb₂Te₃ materials for high-speed phase change memory applications

Characterization of Cu doping on GeTe for phase change memory application

Study on the thermal stability improvement of GeTe by Al doping

Phase transition characteristics of Al-Sb phase change materials for phase change memory application

Investigation of Al doping on Ge₅₅Te₄₅ for phase change memory application

Study on the impact of the initialization process on the phase change memory

Phase-change material Ge_0.61Sb₂Te for application in high-speed phase change random access memory

Carbon-doped Ge₂Sb₂Te₅ phase change material: A candidate for high-density phase change memory application

Ti₁₀Sb₆₀Te₃₀ for phase change memory with high-temperature data retention and rapid crystallization speed

Si_xSb₂Te materials with stable phase for phase change random access memory applications

Pseudobinary Al₂Te₃-Sb₂Te₃ material for high speed phase change memory application

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