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Journal Articles

Charge recovery by vacuum annealing in β-Ga2O3 multi-fin trench Schottky barrier diodes

Editor’s PickOpen Access
Sushovan Dhara, Ashok Dheenan, Siddharth Rajan
Journal: APL Electronic Devices
APL Electronic Devices 1, 026122 (2025)
https://doi.org/10.1063/5.0270286
Published: June 2025
View article titled, Charge recovery by vacuum annealing in β-Ga2O3 multi-fin trench Schottky barrier diodes
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Journal Articles

Electrical and structural characterization of in situ MOCVD Al2O3/β-Ga2O3 and Al2O3/β-(AlxGa1−x)2O3 MOSCAPs

Open Access
A. F. M. Anhar Uddin Bhuiyan, Lingyu Meng, Dong Su Yu, Sushovan Dhara, Hsien-Lien Huang, Vijay Gopal Thirupakuzi Vangipuram, Jinwoo Hwang, Siddharth Rajan, Hongping Zhao
Journal: Journal of Applied Physics
J. Appl. Phys. 137, 174101 (2025)
https://doi.org/10.1063/5.0256525
Published: May 2025
View article titled, Electrical and structural characterization of in situ MOCVD Al2O3/β-Ga2O3 and Al2O3/β-(AlxGa1−x)2O3 MOSCAPs
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Journal Articles

Selective injection AlGaN/GaN heterojunction bipolar transistors with patterned regrown base contacts

Open Access
Chandan Joishi, Sheikh I. Rahman, Zhanbo Xia, Shahadat H. Sohel, Siddharth Rajan
Journal: APL Electronic Devices
APL Electronic Devices 1, 026105 (2025)
https://doi.org/10.1063/5.0249838
Published: April 2025
View article titled, Selective injection AlGaN/GaN heterojunction bipolar transistors with patterned regrown base contacts
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Journal Articles

Impact of quantum well thickness on efficiency loss in InGaN/GaN LEDs: Challenges for thin-well designs

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Xuefeng Li, Nick Pant, Sheikh Ifatur Rahman, Rob Armitage, Siddharth Rajan, Emmanouil Kioupakis, Daniel Feezell
Journal: Applied Physics Letters
Appl. Phys. Lett. 126, 132102 (2025)
https://doi.org/10.1063/5.0258108
Published: March 2025
View article titled, Impact of quantum well thickness on efficiency loss in InGaN/GaN LEDs: Challenges for thin-well designs
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Journal Articles

Ultra-high permittivity BaTiO3 (ε = 230) on Al2O3/AlGaN/GaN MISHEMTs for field-management in high-voltage RF applications

FeaturedOpen Access
Kyle J. Liddy, Weisong Wang, Stefan Nikodemski, Chris Chae, Kevin D. Leedy, Jean-Pierre Bega, Nolan S. Hendricks, Elizabeth A. Sowers, Ahmad E. Islam, Jinwoo Hwang, Siddharth Rajan, Andrew J. Green
Journal: APL Electronic Devices
APL Electronic Devices 1, 016112 (2025)
https://doi.org/10.1063/5.0250731
Published: March 2025
View article titled, Ultra-high permittivity BaTiO3 (ε = 230) on Al2O3/AlGaN/GaN MISHEMTs for field-management in high-voltage RF applications
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Journal Articles

Heterostructure and interfacial engineering for low-resistance contacts to ultra-wide bandgap AlGaN

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Yinxuan Zhu, Andrew A. Allerman, Chandan Joishi, Jonathan Pratt, Agnes Maneesha Dominic Merwin Xavier, Gabriel Calderon Ortiz, Brianna A. Klein, Andrew Armstrong, Jinwoo Hwang, Siddharth Rajan
Journal: Applied Physics Letters
Appl. Phys. Lett. 126, 062107 (2025)
https://doi.org/10.1063/5.0230220
Published: February 2025
View article titled, Heterostructure and interfacial engineering for low-resistance contacts to ultra-wide bandgap AlGaN
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Journal Articles

Impact of metal diffusion, lattice distortions, native defects, and ambient on dielectric breakdown in Ni–Ga2O3 Schottky diodes

Open Access
Daram N. Ramdin, Hsien-Lien Huang, Christopher Chae, Sushovan Dhara, Siddharth Rajan, Jinwoo Hwang, Leonard J. Brillson
Journal: APL Materials
APL Mater. 12, 101118 (2024)
https://doi.org/10.1063/5.0228825
Published: October 2024
View article titled, Impact of metal diffusion, lattice distortions, native defects, and ambient on dielectric breakdown in Ni–Ga2O3 Schottky diodes
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Journal Articles

Active interface characteristics of heterogeneously integrated GaAsSb/Si photodiodes

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Manisha Muduli, Yongkang Xia, Seunghyun Lee, Nathan Gajowski, Chris Chae, Siddharth Rajan, Jinwoo Hwang, Shamsul Arafin, Sanjay Krishna
Journal: Applied Physics Letters
Appl. Phys. Lett. 125, 171103 (2024)
https://doi.org/10.1063/5.0230901
Published: October 2024
View article titled, Active interface characteristics of heterogeneously integrated GaAsSb/Si photodiodes
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Journal Articles

Tunnel junction-enabled monolithically integrated GaN micro-light emitting transistor

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Sheikh Ifatur Rahman, Mohammad Awwad, Chandan Joishi, Zane Jamal-Eddine, Brendan Gunning, Andrew Armstrong, Siddharth Rajan
Journal: Applied Physics Letters
Appl. Phys. Lett. 124, 221106 (2024)
https://doi.org/10.1063/5.0213300
Published: May 2024
View article titled, Tunnel junction-enabled monolithically integrated GaN micro-light emitting transistor
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Journal Articles

High temperature stability of regrown and alloyed Ohmic contacts to AlGaN/GaN heterostructure up to 500 °C

Open Access
John Niroula, Qingyun Xie, Nitul S. Rajput, Patrick K. Darmawi-Iskandar, Sheikh Ifatur Rahman, Shisong Luo, Rafid Hassan Palash, Bejoy Sikder, Mengyang Yuan, Pradyot Yadav, Gillian K. Micale, Nadim Chowdhury, Yuji Zhao, Siddharth Rajan, Tomás Palacios
Journal: Applied Physics Letters
Appl. Phys. Lett. 124, 202103 (2024)
https://doi.org/10.1063/5.0191297
Published: May 2024
View article titled, High temperature stability of regrown and alloyed Ohmic contacts to AlGaN/GaN heterostructure up to 500 °C
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Journal Articles

Publisher's Note: “β-Ga2O3 trench Schottky diodes by low-damage Ga-atomic beam etching” [Appl. Phys. Lett. 123 , 023503 (2023)]

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Sushovan Dhara, Nidhin Kurian Kalarickal, Ashok Dheenan, Sheikh Ifatur Rahman, Chandan Joishi, Siddharth Rajan
Journal: Applied Physics Letters
Appl. Phys. Lett. 123, 109901 (2023)
https://doi.org/10.1063/5.0173754
Published: September 2023
View article titled, Publisher's Note: “β-Ga2O3 trench Schottky diodes by low-damage Ga-atomic beam etching” [Appl. Phys. Lett. 123 , 023503 (2023)]
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Journal Articles

Plasma-assisted deposition and characterization of Al2O3 dielectric layers on (001) β -Ga2O3

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Sushovan Dhara, Ashok Dheenan, Nidhin Kurian Kalarickal, Hsien-Lien Huang, Ahmad Ehteshamul Islam, Chandan Joishi, Andreas Fiedler, Joe F. McGlone, Steven A. Ringel, Jinwoo Hwang, Siddharth Rajan
Journal: Applied Physics Letters
Appl. Phys. Lett. 123, 083504 (2023)
https://doi.org/10.1063/5.0146567
Published: August 2023
View article titled, Plasma-assisted deposition and characterization of Al2O3 dielectric layers on (001) β -Ga2O3
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Includes: Supplementary data
Journal Articles

Demonstration of gallium oxide nano-pillar field emitter arrays

Open Access
Taeyoung Kim, Chandan Joishi, Zhanbo Xia, Nidhin Kurian Kalarickal, Camelia Selcu, Tyson Back, Jonathan Ludwick, Siddharth Rajan
Journal: AIP Advances
AIP Advances 13, 075119 (2023)
https://doi.org/10.1063/5.0145200
Published: July 2023
View article titled, Demonstration of gallium oxide nano-pillar field emitter arrays
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Includes: Supplementary data
Journal Articles

β -Ga2O3 trench Schottky diodes by low-damage Ga-atomic beam etching

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Sushovan Dhara, Nidhin Kurian Kalarickal, Ashok Dheenan, Sheikh Ifatur Rahman, Chandan Joishi, Siddharth Rajan
Journal: Applied Physics Letters
Appl. Phys. Lett. 123, 023503 (2023)
https://doi.org/10.1063/5.0151808
Published: July 2023
View article titled, β -Ga2O3 trench Schottky diodes by low-damage Ga-atomic beam etching
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Includes: Supplementary data
Journal Articles

Demonstration of self-aligned β -Ga2O3  δ -doped MOSFETs with current density >550 mA/mm

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Nidhin Kurian Kalarickal, Ashok Dheenan, Joe F. McGlone, Sushovan Dhara, Mark Brenner, Steven A. Ringel, Siddharth Rajan
Journal: Applied Physics Letters
Appl. Phys. Lett. 122, 113506 (2023)
https://doi.org/10.1063/5.0131996
Published: March 2023
View article titled, Demonstration of self-aligned β -Ga2O3  δ -doped MOSFETs with current density >550 mA/mm
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Includes: Supplementary data
Journal Articles

Design and demonstration of efficient transparent 30% Al-content AlGaN interband tunnel junctions

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Agnes Maneesha Dominic Merwin Xavier, Arnob Ghosh, Sheikh Ifatur Rahman, Andrew Allerman, Shamsul Arafin, Siddharth Rajan
Journal: Applied Physics Letters
Appl. Phys. Lett. 122, 081108 (2023)
https://doi.org/10.1063/5.0122919
Published: February 2023
View article titled, Design and demonstration of efficient transparent 30% Al-content AlGaN interband tunnel junctions
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Journal Articles

Simulation of GaN-based light emitting diodes incorporating composition fluctuation effects

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Sheikh Ifatur Rahman, Zane Jamal-Eddine, Zhanbo Xia, Mohammad Awwad, Robert Armitage, Siddharth Rajan
Journal: Journal of Applied Physics
J. Appl. Phys. 132, 235702 (2022)
https://doi.org/10.1063/5.0125684
Published: December 2022
View article titled, Simulation of GaN-based light emitting diodes incorporating composition fluctuation effects
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Journal Articles

β -Ga2O3 Schottky barrier diodes with 4.1 MV/cm field strength by deep plasma etching field-termination

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Sushovan Dhara, Nidhin Kurian Kalarickal, Ashok Dheenan, Chandan Joishi, Siddharth Rajan
Journal: Applied Physics Letters
Appl. Phys. Lett. 121, 203501 (2022)
https://doi.org/10.1063/5.0123284
Published: November 2022
View article titled, β -Ga2O3 Schottky barrier diodes with 4.1 MV/cm field strength by deep plasma etching field-termination
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Includes: Supplementary data
Journal Articles

Quantitative x-ray diffraction analysis of strain and interdiffusion in β-Ga2O3 superlattices of μ-Fe2O3 and β-(AlxGa1−x)2O3

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Elline C. Hettiaratchy, Binbin Wang, Ashok Dheenan, Joe McGlone, Nidhin Kurian Kalarickal, Núria Bagués, Steven Ringel, David W. McComb, Siddharth Rajan, Roberto C. Myers
Journal: Journal of Vacuum Science & Technology A
J. Vac. Sci. Technol. A 40, 062708 (2022)
https://doi.org/10.1116/6.0002207
Published: November 2022
View article titled, Quantitative x-ray diffraction analysis of strain and interdiffusion in β-Ga2O3 superlattices of μ-Fe2O3 and β-(AlxGa1−x)2O3
Open the PDF for Quantitative x-ray diffraction analysis of strain and interdiffusion in β-Ga2O3 superlattices of μ-Fe2O3 and β-(AlxGa1−x)2O3 in another window
Journal Articles

The impact of semiconductor surface states on vacuum field emission

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Taeyoung Kim, Chandan Joishi, Pao-Chuan Shih, Tomás Palacios, Siddharth Rajan
Journal: Journal of Applied Physics
J. Appl. Phys. 132, 165701 (2022)
https://doi.org/10.1063/5.0105657
Published: October 2022
View article titled, The impact of semiconductor surface states on vacuum field emission
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