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Journal Articles

Role of dislocations on Sn diffusion during low temperature annealing of GeSn layers

Hryhorii Stanchu, Abdulla Said, Oluwatobi Olorunsola, Sudip Acharya, Sylvester Amoah, Mohammad Zamani-Alavijeh, Fernando M. de Oliveira, Santosh Karki Chhetri, Jin Hu, Yuriy I. Mazur, Shui-Qing Yu, Gregory Salamo

J. Vac. Sci. Technol. B 41, 052208 (2023)

https://doi.org/10.1116/6.0002957

Published: September 2023

View article titled, Role of dislocations on Sn diffusion during low temperature annealing of GeSn layers

Journal Articles

Strain-driven anomalous elastic properties of GeSn thin films

Petro Lytvyn, Andrian Kuchuk, Serhiy Kondratenko, Hryhorii Stanchu, Sergii V. Malyuta, Shui-Qing Yu, Yuriy I. Mazur, Gregory J. Salamo

Appl. Phys. Lett. 123, 022102 (2023)

https://doi.org/10.1063/5.0149098

Published: July 2023

View article titled, Strain-driven anomalous elastic properties of GeSn thin films

Includes: Supplementary data

Journal Articles

Study of critical optical confinement factor for GeSn-based multiple quantum well lasers

Grey Abernathy, Solomon Ojo, Joshua M. Grant, Yiyin Zhou, Wei Du, Andrian Kuchuk, Baohua Li, Shui-Qing Yu

Appl. Phys. Lett. 121, 171101 (2022)

https://doi.org/10.1063/5.0107081

Published: October 2022

View article titled, Study of critical optical confinement factor for GeSn-based multiple quantum well lasers

Journal Articles

Momentum(k)-space carrier separation using SiGeSn alloys for photodetector applications

Tyler T. McCarthy, Zheng Ju, Stephen Schaefer, Shui-Qing Yu, Yong-Hang Zhang

J. Appl. Phys. 130, 223102 (2021)

https://doi.org/10.1063/5.0063179

Published: December 2021

View article titled, Momentum(k)-space carrier separation using SiGeSn alloys for photodetector applications

Journal Articles

Study of SiGeSn/GeSn single quantum well toward high-performance all-group-IV optoelectronics

Grey Abernathy, Yiyin Zhou, Solomon Ojo, Bader Alharthi, Perry C. Grant, Wei Du, Joe Margetis, John Tolle, Andrian Kuchuk, Baohua Li, Shui-Qing Yu

J. Appl. Phys. 129, 093105 (2021)

https://doi.org/10.1063/5.0030230

Published: March 2021

View article titled, Study of SiGeSn/GeSn single quantum well toward high-performance all-group-IV optoelectronics

Journal Articles

Strain suppressed Sn incorporation in GeSn epitaxially grown on Ge/Si(001) substrate

Hryhorii V. Stanchu, Andrian V. Kuchuk, Yuriy I. Mazur, Joe Margetis, John Tolle, Shui-Qing Yu, Gregory J. Salamo

Appl. Phys. Lett. 116, 232101 (2020)

https://doi.org/10.1063/5.0011842

Published: June 2020

View article titled, Strain suppressed Sn incorporation in GeSn epitaxially grown on Ge/Si(001) substrate

Includes: Supplementary data

Journal Articles

Chemistry and kinetics governing hydride/chloride chemical vapor deposition of epitaxial Ge_1−xSn_x

Joe Margetis, Shui-Qing Yu, Baohua Li, John Tolle

J. Vac. Sci. Technol. A 37, 021508 (2019)

https://doi.org/10.1116/1.5055620

Published: January 2019

View article titled, Chemistry and kinetics governing hydride/chloride chemical vapor deposition of epitaxial Ge1−xSnx

Journal Articles

All group-IV SiGeSn/GeSn/SiGeSn QW laser on Si operating up to 90 K

Appl. Phys. Lett. 113, 221104 (2018)

https://doi.org/10.1063/1.5052563

Published: November 2018

View article titled, All group-IV SiGeSn/GeSn/SiGeSn QW laser on Si operating up to 90 K

Includes: Supplementary data

Journal Articles

High performance Ge_0.89Sn_0.11 photodiodes for low-cost shortwave infrared imaging

Huong Tran, Thach Pham, Wei Du, Yang Zhang, Perry C. Grant, Joshua M. Grant, Greg Sun, Richard A. Soref, Joe Margetis, John Tolle, Baohua Li, Mansour Mortazavi, Shui-Qing Yu

J. Appl. Phys. 124, 013101 (2018)

https://doi.org/10.1063/1.5020510

Published: July 2018

View article titled, High performance Ge0.89Sn0.11 photodiodes for low-cost shortwave infrared imaging

Journal Articles

Direct bandgap type-I GeSn/GeSn quantum well on a GeSn- and Ge- buffered Si substrate

Perry C. Grant, Joe Margetis, Yiyin Zhou, Wei Dou, Grey Abernathy, Andrian Kuchuk, Wei Du, Baohua Li, John Tolle, Jifeng Liu, Greg Sun, Richard A. Soref, Mansour Mortazavi, Shui-Qing Yu

AIP Advances 8, 025104 (2018)

https://doi.org/10.1063/1.5020035

Published: February 2018

View article titled, Direct bandgap type-I GeSn/GeSn quantum well on a GeSn- and Ge- buffered Si substrate

Journal Articles

Comparison study of the low temperature growth of dilute GeSn and Ge

Perry C. Grant, Wei Dou, Bader Alharthi, Joshua M. Grant, Aboozar Mosleh, Wei Du, Baohua Li, Mansour Mortazavi, Hameed A. Naseem, Shui-Qing Yu

J. Vac. Sci. Technol. B 35, 061204 (2017)

https://doi.org/10.1116/1.4990773

Published: October 2017

View article titled, Comparison study of the low temperature growth of dilute GeSn and Ge

Journal Articles

Investigation of optical transitions in a SiGeSn/GeSn/SiGeSn single quantum well structure

Wei Du, Seyed Amir Ghetmiri, Joe Margetis, Sattar Al-Kabi, Yiyin Zhou, Jifeng Liu, Greg Sun, Richard A. Soref, John Tolle, Baohua Li, Mansour Mortazavi, Shui-Qing Yu

J. Appl. Phys. 122, 123102 (2017)

https://doi.org/10.1063/1.4986341

Published: September 2017

View article titled, Investigation of optical transitions in a SiGeSn/GeSn/SiGeSn single quantum well structure

Journal Articles

An optically pumped 2.5 μm GeSn laser on Si operating at 110 K

Sattar Al-Kabi, Seyed Amir Ghetmiri, Joe Margetis, Thach Pham, Yiyin Zhou, Wei Dou, Bria Collier, Randy Quinde, Wei Du, Aboozar Mosleh, Jifeng Liu, Greg Sun, Richard A. Soref, John Tolle, Baohua Li, Mansour Mortazavi, Hameed A. Naseem, Shui-Qing Yu

Appl. Phys. Lett. 109, 171105 (2016)

https://doi.org/10.1063/1.4966141

Published: October 2016

View article titled, An optically pumped 2.5 μm GeSn laser on Si operating at 110 K

Includes: Supplementary data

Journal Articles

Systematic study of GeSn heterostructure-based light-emitting diodes towards mid-infrared applications

Yiyin Zhou, Wei Dou, Wei Du, Thach Pham, Seyed Amir Ghetmiri, Sattar Al-Kabi, Aboozar Mosleh, Murtadha Alher, Joe Margetis, John Tolle, Greg Sun, Richard Soref, Baohua Li, Mansour Mortazavi, Hameed Naseem, Shui-Qing Yu

J. Appl. Phys. 120, 023102 (2016)

https://doi.org/10.1063/1.4958337

Published: July 2016

View article titled, Systematic study of GeSn heterostructure-based light-emitting diodes towards mid-infrared applications

Journal Articles

Systematic study of Ge_1−xSn_x absorption coefficient and refractive index for the device applications of Si-based optoelectronics

Huong Tran, Wei Du, Seyed A. Ghetmiri, Aboozar Mosleh, Greg Sun, Richard A. Soref, Joe Margetis, John Tolle, Baohua Li, Hameed A. Naseem, Shui-Qing Yu

J. Appl. Phys. 119, 103106 (2016)

https://doi.org/10.1063/1.4943652

Published: March 2016

View article titled, Systematic study of Ge1−xSnx absorption coefficient and refractive index for the device applications of Si-based optoelectronics

Journal Articles

Si_yGe_1−x−ySn_x films grown on Si using a cold-wall ultrahigh-vacuum chemical vapor deposition system

Aboozar Mosleh, Murtadha Alher, Wei Du, Larry C. Cousar, Seyed Amir Ghetmiri, Sattar Al-Kabi, Wei Dou, Perry C. Grant, Greg Sun, Richard A. Soref, Baohua Li, Hameed A. Naseem, Shui-Qing Yu

J. Vac. Sci. Technol. B 34, 011201 (2016)

https://doi.org/10.1116/1.4936892

Published: December 2015

View article titled, SiyGe1−x−ySnx films grown on Si using a cold-wall ultrahigh-vacuum chemical vapor deposition system

Journal Articles

Si based GeSn photoconductors with a 1.63 A/W peak responsivity and a 2.4 μm long-wavelength cutoff

Benjamin R. Conley, Joe Margetis, Wei Du, Huong Tran, Aboozar Mosleh, Seyed Amir Ghetmiri, John Tolle, Greg Sun, Richard Soref, Baohua Li, Hameed A. Naseem, Shui-Qing Yu

Appl. Phys. Lett. 105, 221117 (2014)

https://doi.org/10.1063/1.4903540

Published: December 2014

View article titled, Si based GeSn photoconductors with a 1.63 A/W peak responsivity and a 2.4 μm long-wavelength cutoff

Journal Articles

Direct-bandgap GeSn grown on silicon with 2230 nm photoluminescence

Seyed Amir Ghetmiri, Wei Du, Joe Margetis, Aboozar Mosleh, Larry Cousar, Benjamin R. Conley, Lucas Domulevicz, Amjad Nazzal, Greg Sun, Richard A. Soref, John Tolle, Baohua Li, Hameed A. Naseem, Shui-Qing Yu

Appl. Phys. Lett. 105, 151109 (2014)

https://doi.org/10.1063/1.4898597

Published: October 2014

View article titled, Direct-bandgap GeSn grown on silicon with 2230 nm photoluminescence

Journal Articles

Shortwave-infrared photoluminescence from Ge_1−xSn_x thin films on silicon

Seyed Amir Ghetmiri, Wei Du, Benjamin R. Conley, Aboozar Mosleh, Amjad Nazzal, Greg Sun, Richard A. Soref, Joe Margetis, John Tolle, Hameed A. Naseem, Shui-Qing Yu

J. Vac. Sci. Technol. B 32, 060601 (2014)

https://doi.org/10.1116/1.4897917

Published: October 2014

View article titled, Shortwave-infrared photoluminescence from Ge1−xSnx thin films on silicon

Journal Articles

Competition of optical transitions between direct and indirect bandgaps in Ge_1−xSn_x

Wei Du, Seyed A. Ghetmiri, Benjamin R. Conley, Aboozar Mosleh, Amjad Nazzal, Richard A. Soref, Greg Sun, John Tolle, Joe Margetis, Hameed A. Naseem, Shui-Qing Yu

Appl. Phys. Lett. 105, 051104 (2014)

https://doi.org/10.1063/1.4892302

Published: August 2014

View article titled, Competition of optical transitions between direct and indirect bandgaps in Ge1−xSnx

NARROW

Topics

Role of dislocations on Sn diffusion during low temperature annealing of GeSn layers

Strain-driven anomalous elastic properties of GeSn thin films

Study of critical optical confinement factor for GeSn-based multiple quantum well lasers

Momentum(k)-space carrier separation using SiGeSn alloys for photodetector applications

Study of SiGeSn/GeSn single quantum well toward high-performance all-group-IV optoelectronics

Strain suppressed Sn incorporation in GeSn epitaxially grown on Ge/Si(001) substrate

Chemistry and kinetics governing hydride/chloride chemical vapor deposition of epitaxial Ge_1−xSn_x

All group-IV SiGeSn/GeSn/SiGeSn QW laser on Si operating up to 90 K

High performance Ge_0.89Sn_0.11 photodiodes for low-cost shortwave infrared imaging

Direct bandgap type-I GeSn/GeSn quantum well on a GeSn- and Ge- buffered Si substrate

Comparison study of the low temperature growth of dilute GeSn and Ge

Investigation of optical transitions in a SiGeSn/GeSn/SiGeSn single quantum well structure

An optically pumped 2.5 μm GeSn laser on Si operating at 110 K

Systematic study of GeSn heterostructure-based light-emitting diodes towards mid-infrared applications

Systematic study of Ge_1−xSn_x absorption coefficient and refractive index for the device applications of Si-based optoelectronics

Si_yGe_1−x−ySn_x films grown on Si using a cold-wall ultrahigh-vacuum chemical vapor deposition system

Si based GeSn photoconductors with a 1.63 A/W peak responsivity and a 2.4 μm long-wavelength cutoff

Direct-bandgap GeSn grown on silicon with 2230 nm photoluminescence

Shortwave-infrared photoluminescence from Ge_1−xSn_x thin films on silicon

Competition of optical transitions between direct and indirect bandgaps in Ge_1−xSn_x

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