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Shui-Qing Yu
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Journal Articles

Development of GeSn epitaxial films with strong direct bandgap luminescence in the mid-wave infrared region using a commercial chemical vapor deposition reactor

Nicholas Rosson, Sudip Acharya, Alec M. Fischer, Bria Collier, Abdulla Ali, Ali Torabi, Wei Du, Shui-Qing Yu, Robin C. Scott
Journal: Journal of Vacuum Science & Technology B
J. Vac. Sci. Technol. B 42, 052210 (2024)
https://doi.org/10.1116/6.0003798
Published: September 2024
View article titled, Development of GeSn epitaxial films with strong direct bandgap luminescence in the mid-wave infrared region using a commercial chemical vapor deposition reactor
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Journal Articles

GaAs/GeSn/Ge n–i–p diodes and light emitting diodes formed via grafting

Jie Zhou, Haibo Wang, Po Rei Huang, Shengqiang Xu, Yang Liu, Jiarui Gong, Jianping Shen, Daniel Vicent, Samuel Haessly, Alireza Abrand, Parsian K. Mohseni, Munho Kim, Shui-Qing Yu, Guo-En Chang, Xiao Gong, Zhenqiang Ma
Journal: Journal of Vacuum Science & Technology B
J. Vac. Sci. Technol. B 42, 042213 (2024)
https://doi.org/10.1116/6.0003619
Published: July 2024
View article titled, GaAs/GeSn/Ge <em>n–i–p</em> diodes and light emitting diodes formed via grafting
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Journal Articles

Development of aspect ratio trapping growth of GeSn on Si for midwave infrared applications

Editor’s Pick
Hryhorii Stanchu, Grey Abernathy, Joshua Grant, Fernando M. de Oliveira, Yuriy I. Mazur, Jifeng Liu, Wei Du, Baohua Li, Gregory J. Salamo, Shui-Qing Yu
Journal: Journal of Vacuum Science & Technology B
J. Vac. Sci. Technol. B 42, 042802 (2024)
https://doi.org/10.1116/6.0003734
Published: July 2024
View article titled, Development of aspect ratio trapping growth of GeSn on Si for midwave infrared applications
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Journal Articles

In situ mass spectrometric investigation to probe GeSn growth dynamics and mechanisms in the chemical vapor deposition processes

Joshua M. Grant, Enbo Yang, Narges Masoumi, Alexander Golden, Joe Margetis, Andrew Chizmeshya, Wei Du, Shui-Qing Yu
Journal: Journal of Vacuum Science & Technology B
J. Vac. Sci. Technol. B 42, 044002 (2024)
https://doi.org/10.1116/6.0003566
Published: June 2024
View article titled, <em>In situ</em> mass spectrometric investigation to probe GeSn growth dynamics and mechanisms in the chemical vapor deposition processes
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Journal Articles

Molecular beam epitaxy growth and characterization of GePb alloys

Tyler T. McCarthy, Allison M. McMinn, Xiaoyang Liu, Razine Hossain, Xin Qi, Zheng Ju, Mark Mangus, Shui-Qing Yu, Yong-Hang Zhang
Journal: Journal of Vacuum Science & Technology B
J. Vac. Sci. Technol. B 42, 032210 (2024)
https://doi.org/10.1116/6.0003567
Published: May 2024
View article titled, Molecular beam epitaxy growth and characterization of GePb alloys
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Journal Articles

Effects of ion implantation with arsenic and boron in germanium-tin layers

Editor’s Pick
Sylvester Amoah, Hryhorii Stanchu, Grey Abernathy, Serhii Kryvyi, Fernando M. De Oliveira, Yuriy I. Mazur, Shangda Li, Shang Liu, Jifeng Liu, Wei Du, Baohua Li, Gregory Salamo, Shui-Qing Yu
Journal: Journal of Vacuum Science & Technology B
J. Vac. Sci. Technol. B 42, 034002 (2024)
https://doi.org/10.1116/6.0003565
Published: April 2024
View article titled, Effects of ion implantation with arsenic and boron in germanium-tin layers
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Includes: Supplementary data
Journal Articles

Auger-limited minority carrier lifetime in GeSn/SiGeSn quantum well

Perry C. Grant, Preston T. Webster, Rigo A. Carrasco, Julie V. Logan, Christopher P. Hains, Nathan Gajowski, Shui-Qing Yu, Baohua Li, Christian P. Morath, Diana Maestas
Journal: Applied Physics Letters
Appl. Phys. Lett. 124, 111110 (2024)
https://doi.org/10.1063/5.0198126
Published: March 2024
View article titled, Auger-limited minority carrier lifetime in GeSn/SiGeSn quantum well
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Journal Articles

Role of dislocations on Sn diffusion during low temperature annealing of GeSn layers

Hryhorii Stanchu, Abdulla Said, Oluwatobi Olorunsola, Sudip Acharya, Sylvester Amoah, Mohammad Zamani-Alavijeh, Fernando M. de Oliveira, Santosh Karki Chhetri, Jin Hu, Yuriy I. Mazur, Shui-Qing Yu, Gregory Salamo
Journal: Journal of Vacuum Science & Technology B
J. Vac. Sci. Technol. B 41, 052208 (2023)
https://doi.org/10.1116/6.0002957
Published: September 2023
View article titled, Role of dislocations on Sn diffusion during low temperature annealing of GeSn layers
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Journal Articles

Strain-driven anomalous elastic properties of GeSn thin films

Petro Lytvyn, Andrian Kuchuk, Serhiy Kondratenko, Hryhorii Stanchu, Sergii V. Malyuta, Shui-Qing Yu, Yuriy I. Mazur, Gregory J. Salamo
Journal: Applied Physics Letters
Appl. Phys. Lett. 123, 022102 (2023)
https://doi.org/10.1063/5.0149098
Published: July 2023
View article titled, Strain-driven anomalous elastic properties of GeSn thin films
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Includes: Supplementary data
Journal Articles

Study of critical optical confinement factor for GeSn-based multiple quantum well lasers

Grey Abernathy, Solomon Ojo, Joshua M. Grant, Yiyin Zhou, Wei Du, Andrian Kuchuk, Baohua Li, Shui-Qing Yu
Journal: Applied Physics Letters
Appl. Phys. Lett. 121, 171101 (2022)
https://doi.org/10.1063/5.0107081
Published: October 2022
View article titled, Study of critical optical confinement factor for GeSn-based multiple quantum well lasers
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Journal Articles

Momentum(k)-space carrier separation using SiGeSn alloys for photodetector applications

Tyler T. McCarthy, Zheng Ju, Stephen Schaefer, Shui-Qing Yu, Yong-Hang Zhang
Journal: Journal of Applied Physics
J. Appl. Phys. 130, 223102 (2021)
https://doi.org/10.1063/5.0063179
Published: December 2021
View article titled, Momentum(<em>k</em>)-space carrier separation using SiGeSn alloys for photodetector applications
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Journal Articles

Study of SiGeSn/GeSn single quantum well toward high-performance all-group-IV optoelectronics

Grey Abernathy, Yiyin Zhou, Solomon Ojo, Bader Alharthi, Perry C. Grant, Wei Du, Joe Margetis, John Tolle, Andrian Kuchuk, Baohua Li, Shui-Qing Yu
Journal: Journal of Applied Physics
J. Appl. Phys. 129, 093105 (2021)
https://doi.org/10.1063/5.0030230
Published: March 2021
View article titled, Study of SiGeSn/GeSn single quantum well toward high-performance all-group-IV optoelectronics
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Journal Articles

Strain suppressed Sn incorporation in GeSn epitaxially grown on Ge/Si(001) substrate

Hryhorii V. Stanchu, Andrian V. Kuchuk, Yuriy I. Mazur, Joe Margetis, John Tolle, Shui-Qing Yu, Gregory J. Salamo
Journal: Applied Physics Letters
Appl. Phys. Lett. 116, 232101 (2020)
https://doi.org/10.1063/5.0011842
Published: June 2020
View article titled, Strain suppressed Sn incorporation in GeSn epitaxially grown on Ge/Si(001) substrate
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Includes: Supplementary data
Journal Articles

Chemistry and kinetics governing hydride/chloride chemical vapor deposition of epitaxial Ge1−xSnx

Joe Margetis, Shui-Qing Yu, Baohua Li, John Tolle
Journal: Journal of Vacuum Science & Technology A
J. Vac. Sci. Technol. A 37, 021508 (2019)
https://doi.org/10.1116/1.5055620
Published: January 2019
View article titled, Chemistry and kinetics governing hydride/chloride chemical vapor deposition of epitaxial Ge<sub>1−x</sub>Sn<sub>x</sub>
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Journal Articles

All group-IV SiGeSn/GeSn/SiGeSn QW laser on Si operating up to 90 K

Joe Margetis, Yiyin Zhou, Wei Dou, Perry C. Grant, Bader Alharthi, Wei Du, Alicia Wadsworth, Qianying Guo, Huong Tran, Solomon Ojo, Grey Abernathy, Aboozar Mosleh, Seyed A. Ghetmiri, Gregory B. Thompson, Jifeng Liu, Greg Sun, Richard Soref, John Tolle, Baohua Li, Mansour Mortazavi, Shui-Qing Yu
Journal: Applied Physics Letters
Appl. Phys. Lett. 113, 221104 (2018)
https://doi.org/10.1063/1.5052563
Published: November 2018
View article titled, All group-IV SiGeSn/GeSn/SiGeSn QW laser on Si operating up to 90 K
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Includes: Supplementary data
Journal Articles

High performance Ge0.89Sn0.11 photodiodes for low-cost shortwave infrared imaging

Huong Tran, Thach Pham, Wei Du, Yang Zhang, Perry C. Grant, Joshua M. Grant, Greg Sun, Richard A. Soref, Joe Margetis, John Tolle, Baohua Li, Mansour Mortazavi, Shui-Qing Yu
Journal: Journal of Applied Physics
J. Appl. Phys. 124, 013101 (2018)
https://doi.org/10.1063/1.5020510
Published: July 2018
View article titled, High performance Ge<sub>0.89</sub>Sn<sub>0.11</sub> photodiodes for low-cost shortwave infrared imaging
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Journal Articles

Direct bandgap type-I GeSn/GeSn quantum well on a GeSn- and Ge- buffered Si substrate

Editor’s Pick
Perry C. Grant, Joe Margetis, Yiyin Zhou, Wei Dou, Grey Abernathy, Andrian Kuchuk, Wei Du, Baohua Li, John Tolle, Jifeng Liu, Greg Sun, Richard A. Soref, Mansour Mortazavi, Shui-Qing Yu
Journal: AIP Advances
AIP Advances 8, 025104 (2018)
https://doi.org/10.1063/1.5020035
Published: February 2018
View article titled, Direct bandgap type-I GeSn/GeSn quantum well on a GeSn- and Ge- buffered Si substrate
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Journal Articles

Comparison study of the low temperature growth of dilute GeSn and Ge

Perry C. Grant, Wei Dou, Bader Alharthi, Joshua M. Grant, Aboozar Mosleh, Wei Du, Baohua Li, Mansour Mortazavi, Hameed A. Naseem, Shui-Qing Yu
Journal: Journal of Vacuum Science & Technology B
J. Vac. Sci. Technol. B 35, 061204 (2017)
https://doi.org/10.1116/1.4990773
Published: October 2017
View article titled, Comparison study of the low temperature growth of dilute GeSn and Ge
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Journal Articles

Investigation of optical transitions in a SiGeSn/GeSn/SiGeSn single quantum well structure

Wei Du, Seyed Amir Ghetmiri, Joe Margetis, Sattar Al-Kabi, Yiyin Zhou, Jifeng Liu, Greg Sun, Richard A. Soref, John Tolle, Baohua Li, Mansour Mortazavi, Shui-Qing Yu
Journal: Journal of Applied Physics
J. Appl. Phys. 122, 123102 (2017)
https://doi.org/10.1063/1.4986341
Published: September 2017
View article titled, Investigation of optical transitions in a SiGeSn/GeSn/SiGeSn single quantum well structure
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Journal Articles

An optically pumped 2.5 μm GeSn laser on Si operating at 110 K

Sattar Al-Kabi, Seyed Amir Ghetmiri, Joe Margetis, Thach Pham, Yiyin Zhou, Wei Dou, Bria Collier, Randy Quinde, Wei Du, Aboozar Mosleh, Jifeng Liu, Greg Sun, Richard A. Soref, John Tolle, Baohua Li, Mansour Mortazavi, Hameed A. Naseem, Shui-Qing Yu
Journal: Applied Physics Letters
Appl. Phys. Lett. 109, 171105 (2016)
https://doi.org/10.1063/1.4966141
Published: October 2016
View article titled, An optically pumped 2.5 <em>μ</em>m GeSn laser on Si operating at 110 K
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Includes: Supplementary data