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Journal Articles

Oxygen vacancies and local amorphization introduced by high fluence neutron irradiation in β -Ga₂O₃ power diodes

Jinyang Liu, Zhao Han, Lei Ren, Xiao Yang, Guangwei Xu, Weibing Hao, Xiaolong Zhao, Shu Yang, Di Lu, Yuncheng Han, Xiaohu Hou, Shibing Long

Appl. Phys. Lett. 123, 112106 (2023)

https://doi.org/10.1063/5.0161934

Published: September 2023

View article titled, Oxygen vacancies and local amorphization introduced by high fluence neutron irradiation in β -Ga2O3 power diodes

Journal Articles

Simulation studies of floating field plate in β-Ga₂O₃ power devices and modules

Zhao Han, Guangwei Xu, Xueqiang Xiang, Weibing Hao, Yuanbiao Li, Xuanze Zhou, Xiaobing Yan, Shibing Long

J. Vac. Sci. Technol. A 41, 053102 (2023)

https://doi.org/10.1116/6.0002650

Published: July 2023

View article titled, Simulation studies of floating field plate in β-Ga2O3 power devices and modules

Journal Articles

A core drain current model for β-Ga₂O₃ power MOSFETs based on surface potential

Kai Zhou, Songming Miao, Xuanze Zhou, Guangwei Xu, Lingfei Wang, Shibing Long

AIP Advances 13, 015202 (2023)

https://doi.org/10.1063/5.0134215

Published: January 2023

View article titled, A core drain current model for β-Ga2O3 power MOSFETs based on surface potential

Journal Articles

Enhancement-mode β-Ga₂O₃ U-shaped gate trench vertical MOSFET realized by oxygen annealing

Xuanze Zhou, Yongjian Ma, Guangwei Xu, Qi Liu, Jinyang Liu, Qiming He, Xiaolong Zhao, Shibing Long

Appl. Phys. Lett. 121, 223501 (2022)

https://doi.org/10.1063/5.0130292

Published: November 2022

View article titled, Enhancement-mode β-Ga2O3 U-shaped gate trench vertical MOSFET realized by oxygen annealing

Journal Articles

Hysteresis-free Ga₂O₃ solar-blind phototransistor modulated from photoconduction to photogating effect

Pengju Tan, Yanni Zou, Xiaolong Zhao, Xiaohu Hou, Zhongfang Zhang, Mengfan Ding, Shunjie Yu, Xiaolan Ma, Guangwei Xu, Qin Hu, Shibing Long

Appl. Phys. Lett. 120, 071106 (2022)

https://doi.org/10.1063/5.0078904

Published: February 2022

View article titled, Hysteresis-free Ga2O3 solar-blind phototransistor modulated from photoconduction to photogating effect

Journal Articles

Demonstration of AlGaN/GaN HEMTs on vicinal sapphire substrates with large misoriented angles

Haochen Zhang, Yue Sun, Kang Song, Chong Xing, Lei Yang, Danhao Wang, Huabin Yu, Xueqiang Xiang, Nan Gao, Guangwei Xu, Haiding Sun, Shibing Long

Appl. Phys. Lett. 119, 072104 (2021)

https://doi.org/10.1063/5.0056285

Published: August 2021

View article titled, Demonstration of AlGaN/GaN HEMTs on vicinal sapphire substrates with large misoriented angles

Journal Articles

Demonstration of AlGaN/GaN-based ultraviolet phototransistor with a record high responsivity over 3.6 × 10⁷ A/W

Haochen Zhang, Fangzhou Liang, Kang Song, Chong Xing, Danhao Wang, Huabin Yu, Chen Huang, Yue Sun, Lei Yang, Xiaolong Zhao, Haiding Sun, Shibing Long

Appl. Phys. Lett. 118, 242105 (2021)

https://doi.org/10.1063/5.0055468

Published: June 2021

View article titled, Demonstration of AlGaN/GaN-based ultraviolet phototransistor with a record high responsivity over 3.6 × 107 A/W

Journal Articles

Investigation of quantum structure in N-polar deep-ultraviolet light-emitting diodes

Hongfeng Jia, Huabin Yu, Yang Kang, Zhongjie Ren, Muhammad Hunain Memon, Wei Guo, Haiding Sun, Shibing Long

J. Appl. Phys. 129, 133102 (2021)

https://doi.org/10.1063/5.0042712

Published: April 2021

View article titled, Investigation of quantum structure in N-polar deep-ultraviolet light-emitting diodes

Journal Articles

Low defect density and small I − V curve hysteresis in NiO/ β -Ga₂O₃ pn diode with a high PFOM of 0.65 GW/cm²

Weibing Hao, Qiming He, Kai Zhou, Guangwei Xu, Wenhao Xiong, Xuanze Zhou, Guangzhong Jian, Chen Chen, Xiaolong Zhao, Shibing Long

Appl. Phys. Lett. 118, 043501 (2021)

https://doi.org/10.1063/5.0038349

Published: January 2021

View article titled, Low defect density and small I − V curve hysteresis in NiO/ β -Ga2O3 pn diode with a high PFOM of 0.65 GW/cm2

Journal Articles

Oxygen migration around the filament region in HfO_x memristors

Ge-Qi Mao, Kan-Hao Xue, Ya-Qian Song, Wei Wu, Jun-Hui Yuan, Li-Heng Li, Huajun Sun, Shibing Long, Xiang-Shui Miao

AIP Advances 9, 105007 (2019)

https://doi.org/10.1063/1.5122989

Published: October 2019

View article titled, Oxygen migration around the filament region in HfOx memristors

Journal Articles

An improved analytical model for the statistics of SET emergence point in HfO₂ memristive device

Dong Xiang, Rulin Zhang, Yu Li, Cong Ye, Enrique Miranda, Jordi Suñé, Shibing Long

AIP Advances 9, 025118 (2019)

https://doi.org/10.1063/1.5085685

Published: February 2019

View article titled, An improved analytical model for the statistics of SET emergence point in HfO2 memristive device

Journal Articles

C-V and J-V investigation of HfO₂/Al₂O₃ bilayer dielectrics MOSCAPs on (100) β-Ga₂O₃

Hang Dong, Wenxiang Mu, Yuan Hu, Qiming He, Bo Fu, Huiwen Xue, Yuan Qin, Guangzhong Jian, Ying Zhang, Shibing Long, Zhitai Jia, Hangbing Lv, Qi Liu, Xutang Tao, Ming Liu

AIP Advances 8, 065215 (2018)

https://doi.org/10.1063/1.5031183

Published: June 2018

View article titled, C-V and J-V investigation of HfO2/Al2O3 bilayer dielectrics MOSCAPs on (100) β-Ga2O3

Journal Articles

Characterization of the inhomogeneous barrier distribution in a Pt/(100)β-Ga₂O₃ Schottky diode via its temperature-dependent electrical properties

Guangzhong Jian, Qiming He, Wenxiang Mu, Bo Fu, Hang Dong, Yuan Qin, Ying Zhang, Huiwen Xue, Shibing Long, Zhitai Jia, Hangbing Lv, Qi Liu, Xutang Tao, Ming Liu

AIP Advances 8, 015316 (2018)

https://doi.org/10.1063/1.5007197

Published: January 2018

View article titled, Characterization of the inhomogeneous barrier distribution in a Pt/(100)β-Ga2O3 Schottky diode via its temperature-dependent electrical properties

Journal Articles

A cell-based clustering model for the reset statistics in RRAM

Hao Sun, Meiyun Zhang, Yu Li, Shibing Long, Qi Liu, Hangbing Lv, Jordi Suñé, Ming Liu

Appl. Phys. Lett. 110, 123503 (2017)

https://doi.org/10.1063/1.4978756

Published: March 2017

View article titled, A cell-based clustering model for the reset statistics in RRAM

Journal Articles

Schottky barrier diode based on β-Ga₂O₃ (100) single crystal substrate and its temperature-dependent electrical characteristics

Qiming He, Wenxiang Mu, Hang Dong, Shibing Long, Zhitai Jia, Hangbing Lv, Qi Liu, Minghua Tang, Xutang Tao, Ming Liu

Appl. Phys. Lett. 110, 093503 (2017)

https://doi.org/10.1063/1.4977766

Published: March 2017

View article titled, Schottky barrier diode based on β-Ga2O3 (100) single crystal substrate and its temperature-dependent electrical characteristics

Journal Articles

Characterization of the photocurrents generated by the laser of atomic force microscopes

Yanfeng Ji, Fei Hui, Yuanyuan Shi, Vanessa Iglesias, David Lewis, Jiebin Niu, Shibing Long, Ming Liu, Alexander Hofer, Werner Frammelsberger, Guenther Benstetter, Andrew Scheuermann, Paul C. McIntyre, Mario Lanza

Rev. Sci. Instrum. 87, 083703 (2016)

https://doi.org/10.1063/1.4960597

Published: August 2016

View article titled, Characterization of the photocurrents generated by the laser of atomic force microscopes

Includes: Supplementary data

Journal Articles

Highly scalable resistive switching memory in metal nanowire crossbar arrays fabricated by electron beam lithography

Jiebin Niu, Meiyun Zhang, Yang Li, Shibing Long, Hangbing Lv, Qi Liu, Ming Liu

J. Vac. Sci. Technol. B 34, 02G105 (2016)

https://doi.org/10.1116/1.4943039

Published: March 2016

View article titled, Highly scalable resistive switching memory in metal nanowire crossbar arrays fabricated by electron beam lithography

Journal Articles

Boron nitride as two dimensional dielectric: Reliability and dielectric breakdown

Yanfeng Ji, Chengbin Pan, Meiyun Zhang, Shibing Long, Xiaojuan Lian, Feng Miao, Fei Hui, Yuanyuan Shi, Luca Larcher, Ernest Wu, Mario Lanza

Appl. Phys. Lett. 108, 012905 (2016)

https://doi.org/10.1063/1.4939131

Published: January 2016

View article titled, Boron nitride as two dimensional dielectric: Reliability and dielectric breakdown

Includes: Supplementary data

Journal Articles

Publisher's Note: “Set statistics in conductive bridge random access memory device with Cu/HfO₂/Pt structure” [Appl. Phys. Lett. 105 , 193501 (2014)]

Meiyun Zhang, Shibing Long, Guoming Wang, Xiaoxin Xu, Yang Li, Qi Liu, Hangbing Lv, Xiaojuan Lian, Enrique Miranda, Jordi Suñé, Ming Liu

Appl. Phys. Lett. 106, 159901 (2015)

https://doi.org/10.1063/1.4907953

Published: April 2015

View article titled, Publisher's Note: “Set statistics in conductive bridge random access memory device with Cu/HfO2/Pt structure” [Appl. Phys. Lett. 105 , 193501 (2014)]

Journal Articles

Improving resistance uniformity and endurance of resistive switching memory by accurately controlling the stress time of pulse program operation

Guoming Wang, Shibing Long, Zhaoan Yu, Meiyun Zhang, Tianchun Ye, Yang Li, Dinglin Xu, Hangbing Lv, Qi Liu, Ming Wang, Xiaoxin Xu, Hongtao Liu, Baohe Yang, Jordi Suñé, Ming Liu

Appl. Phys. Lett. 106, 092103 (2015)

https://doi.org/10.1063/1.4907604

Published: March 2015

View article titled, Improving resistance uniformity and endurance of resistive switching memory by accurately controlling the stress time of pulse program operation

NARROW

Topics

Oxygen vacancies and local amorphization introduced by high fluence neutron irradiation in β -Ga₂O₃ power diodes

Simulation studies of floating field plate in β-Ga₂O₃ power devices and modules

A core drain current model for β-Ga₂O₃ power MOSFETs based on surface potential

Enhancement-mode β-Ga₂O₃ U-shaped gate trench vertical MOSFET realized by oxygen annealing

Hysteresis-free Ga₂O₃ solar-blind phototransistor modulated from photoconduction to photogating effect

Demonstration of AlGaN/GaN HEMTs on vicinal sapphire substrates with large misoriented angles

Demonstration of AlGaN/GaN-based ultraviolet phototransistor with a record high responsivity over 3.6 × 10⁷ A/W

Investigation of quantum structure in N-polar deep-ultraviolet light-emitting diodes

Low defect density and small I − V curve hysteresis in NiO/ β -Ga₂O₃ pn diode with a high PFOM of 0.65 GW/cm²

Oxygen migration around the filament region in HfO_x memristors

An improved analytical model for the statistics of SET emergence point in HfO₂ memristive device

C-V and J-V investigation of HfO₂/Al₂O₃ bilayer dielectrics MOSCAPs on (100) β-Ga₂O₃

Characterization of the inhomogeneous barrier distribution in a Pt/(100)β-Ga₂O₃ Schottky diode via its temperature-dependent electrical properties

A cell-based clustering model for the reset statistics in RRAM

Schottky barrier diode based on β-Ga₂O₃ (100) single crystal substrate and its temperature-dependent electrical characteristics

Characterization of the photocurrents generated by the laser of atomic force microscopes

Highly scalable resistive switching memory in metal nanowire crossbar arrays fabricated by electron beam lithography

Boron nitride as two dimensional dielectric: Reliability and dielectric breakdown

Publisher's Note: “Set statistics in conductive bridge random access memory device with Cu/HfO₂/Pt structure” [Appl. Phys. Lett. 105 , 193501 (2014)]

Improving resistance uniformity and endurance of resistive switching memory by accurately controlling the stress time of pulse program operation

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