Skip Nav Destination
Available to Purchase

Available to Purchase
Update search
Filter
All
- All
- Title
- Author
- Author Affiliations
- Full Text
- Abstract
- Keyword
- DOI
- ISBN
- EISBN
- ISSN
- EISSN
- Issue
- Volume
- References
Filter
All
- All
- Title
- Author
- Author Affiliations
- Full Text
- Abstract
- Keyword
- DOI
- ISBN
- EISBN
- ISSN
- EISSN
- Issue
- Volume
- References
Filter
All
- All
- Title
- Author
- Author Affiliations
- Full Text
- Abstract
- Keyword
- DOI
- ISBN
- EISBN
- ISSN
- EISSN
- Issue
- Volume
- References
Filter
All
- All
- Title
- Author
- Author Affiliations
- Full Text
- Abstract
- Keyword
- DOI
- ISBN
- EISBN
- ISSN
- EISSN
- Issue
- Volume
- References
Filter
All
- All
- Title
- Author
- Author Affiliations
- Full Text
- Abstract
- Keyword
- DOI
- ISBN
- EISBN
- ISSN
- EISSN
- Issue
- Volume
- References
Filter
All
- All
- Title
- Author
- Author Affiliations
- Full Text
- Abstract
- Keyword
- DOI
- ISBN
- EISBN
- ISSN
- EISSN
- Issue
- Volume
- References
NARROW
Format
Collections
Topics
Subjects
Journal
Article Type
Issue Section
Date
Availability
1-20 of 47
Shibing Long
Close
Journal Articles
Liquid-metal-assisted exfoliation of 2D β-Ga2O3 with high anisotropy ratio for solar-blind detection and polarization imaging
Weiheng Zhong, Hong Huang, Yuqing Liu, Jiawei Jing, Wentao Wu, Weizhen Liu, Xiaolong Zhao, Shibing Long, Haiyang Xu
Journal:
Applied Physics Reviews
Appl. Phys. Rev. 12, 011420 (2025)
Published: March 2025
Journal Articles
Improvement of interface quality through low-temperature annealing in β -Ga2O3 diode with compounded mesa and junction termination extension
Available to PurchaseQiuyan Li, Jinyang Liu, Weibing Hao, Xinrui Xu, Zhao Han, Song He, Xiaodong Xu, Guangwei Xu, Shibing Long
Journal:
Applied Physics Letters
Appl. Phys. Lett. 126, 092102 (2025)
Published: March 2025
Journal Articles
Journal Articles
Journal Articles
The characteristics of line-shaped defects and their impact mechanism on device performance in β-Ga2O3 Schottky barrier diodes
Available to Purchase
Journal:
Applied Physics Letters
Appl. Phys. Lett. 126, 012111 (2025)
Published: January 2025
Journal Articles
Sensitive direct converting thin film x-ray detector utilizing β-Ga2O3 fabricated via MOCVD
Available to PurchaseZhiyu Gan, Chen Li, Xiaohu Hou, Shunjie Yu, Shiyu Bai, Zhixin Peng, Keju Han, Yanni Zou, Zhiwei Wang, Xiaolong Zhao, Guangwei Xu, Shibing Long
Journal:
Applied Physics Letters
Appl. Phys. Lett. 125, 191102 (2024)
Published: November 2024
Journal Articles
The mechanism of degradation and failure in NiO/ β -Ga2O3 heterojunction diodes induced by the high-energy ion irradiation
Available to PurchaseSong He, Junpeng Wen, Jinyang Liu, Weibing Hao, Xuanze Zhou, Tianqi Wang, Zhengliang Zhang, Jianli Liu, Guangwei Xu, Shu Yang, Shibing Long
Journal:
Applied Physics Letters
Appl. Phys. Lett. 125, 162101 (2024)
Published: October 2024
Journal Articles
Alpha particle detection based on low leakage and high-barrier vertical PtOx/β-Ga2O3 Schottky barrier diode
Shiyu Bai, Xiaohu Hou, Xiangdong Meng, Lei Ren, Chen Li, Zhao Han, Shunjie Yu, Yan Liu, Zhixin Peng, Yuncheng Han, Xiaolong Zhao, Xuanze Zhou, Guangwei Xu, Shibing Long
Journal:
Applied Physics Letters
Appl. Phys. Lett. 125, 061102 (2024)
Published: August 2024
Journal Articles
Stable Ga2O3 soft x-ray detector with ultrahigh responsivity
Available to PurchaseShunjie Yu, Yan Liu, Xiaohu Hou, Mengfan Ding, Yanni Zou, Yong Guan, Zhao Wu, Xiaolong Zhao, Qin Hu, Guangwei Xu, Shibing Long
Journal:
Applied Physics Letters
Appl. Phys. Lett. 124, 181111 (2024)
Published: May 2024
Journal Articles
Negative bias stress stable PtOx/InGaZnOx Schottky barrier diodes optimized by oxygen annealing
Open Access
Journal:
Journal of Applied Physics
J. Appl. Phys. 135, 114501 (2024)
Published: March 2024
Journal Articles
Oxygen vacancies and local amorphization introduced by high fluence neutron irradiation in β -Ga2O3 power diodes
Available to PurchaseJinyang Liu, Zhao Han, Lei Ren, Xiao Yang, Guangwei Xu, Weibing Hao, Xiaolong Zhao, Shu Yang, Di Lu, Yuncheng Han, Xiaohu Hou, Shibing Long
Journal:
Applied Physics Letters
Appl. Phys. Lett. 123, 112106 (2023)
Published: September 2023
Journal Articles
Simulation studies of floating field plate in β-Ga2O3 power devices and modules
Available to PurchaseZhao Han, Guangwei Xu, Xueqiang Xiang, Weibing Hao, Yuanbiao Li, Xuanze Zhou, Xiaobing Yan, Shibing Long
J. Vac. Sci. Technol. A 41, 053102 (2023)
Published: July 2023
Journal Articles
Journal Articles
Enhancement-mode β-Ga2O3 U-shaped gate trench vertical MOSFET realized by oxygen annealing
Available to Purchase
Journal:
Applied Physics Letters
Appl. Phys. Lett. 121, 223501 (2022)
Published: November 2022
Journal Articles
Hysteresis-free Ga2O3 solar-blind phototransistor modulated from photoconduction to photogating effect
Available to PurchasePengju Tan, Yanni Zou, Xiaolong Zhao, Xiaohu Hou, Zhongfang Zhang, Mengfan Ding, Shunjie Yu, Xiaolan Ma, Guangwei Xu, Qin Hu, Shibing Long
Journal:
Applied Physics Letters
Appl. Phys. Lett. 120, 071106 (2022)
Published: February 2022
Journal Articles
Demonstration of AlGaN/GaN HEMTs on vicinal sapphire substrates with large misoriented angles
Available to PurchaseHaochen Zhang, Yue Sun, Kang Song, Chong Xing, Lei Yang, Danhao Wang, Huabin Yu, Xueqiang Xiang, Nan Gao, Guangwei Xu, Haiding Sun, Shibing Long
Journal:
Applied Physics Letters
Appl. Phys. Lett. 119, 072104 (2021)
Published: August 2021
Journal Articles
Demonstration of AlGaN/GaN-based ultraviolet phototransistor with a record high responsivity over 3.6 × 107 A/W
Available to PurchaseHaochen Zhang, Fangzhou Liang, Kang Song, Chong Xing, Danhao Wang, Huabin Yu, Chen Huang, Yue Sun, Lei Yang, Xiaolong Zhao, Haiding Sun, Shibing Long
Journal:
Applied Physics Letters
Appl. Phys. Lett. 118, 242105 (2021)
Published: June 2021
Journal Articles
Investigation of quantum structure in N-polar deep-ultraviolet light-emitting diodes
Available to PurchaseHongfeng Jia, Huabin Yu, Yang Kang, Zhongjie Ren, Muhammad Hunain Memon, Wei Guo, Haiding Sun, Shibing Long
Journal:
Journal of Applied Physics
J. Appl. Phys. 129, 133102 (2021)
Published: April 2021
Journal Articles
Low defect density and small I − V curve hysteresis in NiO/ β -Ga2O3 pn diode with a high PFOM of 0.65 GW/cm2
Available to PurchaseWeibing Hao, Qiming He, Kai Zhou, Guangwei Xu, Wenhao Xiong, Xuanze Zhou, Guangzhong Jian, Chen Chen, Xiaolong Zhao, Shibing Long
Journal:
Applied Physics Letters
Appl. Phys. Lett. 118, 043501 (2021)
Published: January 2021
Journal Articles
Ge-Qi Mao, Kan-Hao Xue, Ya-Qian Song, Wei Wu, Jun-Hui Yuan, Li-Heng Li, Huajun Sun, Shibing Long, Xiang-Shui Miao
Journal:
AIP Advances
AIP Advances 9, 105007 (2019)
Published: October 2019
1