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Journal Articles

Liquid-metal-assisted exfoliation of 2D β-Ga2O3 with high anisotropy ratio for solar-blind detection and polarization imaging

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Weiheng Zhong, Hong Huang, Yuqing Liu, Jiawei Jing, Wentao Wu, Weizhen Liu, Xiaolong Zhao, Shibing Long, Haiyang Xu
Journal: Applied Physics Reviews
Appl. Phys. Rev. 12, 011420 (2025)
https://doi.org/10.1063/5.0252741
Published: March 2025
View articletitled, Liquid-metal-assisted exfoliation of 2D β-Ga2O3 with high anisotropy ratio for solar-blind detection and polarization imaging
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Journal Articles

Improvement of interface quality through low-temperature annealing in β -Ga2O3 diode with compounded mesa and junction termination extension

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Qiuyan Li, Jinyang Liu, Weibing Hao, Xinrui Xu, Zhao Han, Song He, Xiaodong Xu, Guangwei Xu, Shibing Long
Journal: Applied Physics Letters
Appl. Phys. Lett. 126, 092102 (2025)
https://doi.org/10.1063/5.0248466
Published: March 2025
View articletitled, Improvement of interface quality through low-temperature annealing in β -Ga2O3 diode with compounded mesa and junction termination extension
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Journal Articles

Publisher's note: “High-temperature annealing induced electrical compensation in UID and Sn doped β-Ga2O3 bulk samples: The role of VGa–Sn complexes” [J. Appl. Phys. 137, 055703 (2025)]

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H. J. von Bardeleben, Xuanze Zhou, Jingbo Zhou, Guangwei Xu, Shibing Long, U. Gerstmann
Journal: Journal of Applied Physics
J. Appl. Phys. 137, 089901 (2025)
https://doi.org/10.1063/5.0264567
Published: February 2025
View articletitled, Publisher's note: “High-temperature annealing induced electrical compensation in UID and Sn doped β-Ga2O3 bulk samples: The role of VGa–Sn complexes” [J. Appl. Phys. 137, 055703 (2025)]
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Journal Articles

High-temperature annealing induced electrical compensation in UID and Sn doped β-Ga2O3 bulk samples: The role of VGa–Sn complexes

Open Access
H. J. von Bardeleben, Xuanze Zhou, Jingbo Zhou, Guangwei Xu, Shibing Long, U. Gerstmann
Journal: Journal of Applied Physics
J. Appl. Phys. 137, 055703 (2025)
https://doi.org/10.1063/5.0249111
Published: February 2025
View articletitled, High-temperature annealing induced electrical compensation in UID and Sn doped β-Ga2O3 bulk samples: The role of VGa–Sn complexes
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Journal Articles

The characteristics of line-shaped defects and their impact mechanism on device performance in β-Ga2O3 Schottky barrier diodes

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Jinyang Liu, Song He, Guangwei Xu, Weibing Hao, Xuanze Zhou, Zheyang Zheng, Shibing Long
Journal: Applied Physics Letters
Appl. Phys. Lett. 126, 012111 (2025)
https://doi.org/10.1063/5.0244107
Published: January 2025
View articletitled, The characteristics of line-shaped defects and their impact mechanism on device performance in β-Ga2O3 Schottky barrier diodes
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Journal Articles

Sensitive direct converting thin film x-ray detector utilizing β-Ga2O3 fabricated via MOCVD

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Zhiyu Gan, Chen Li, Xiaohu Hou, Shunjie Yu, Shiyu Bai, Zhixin Peng, Keju Han, Yanni Zou, Zhiwei Wang, Xiaolong Zhao, Guangwei Xu, Shibing Long
Journal: Applied Physics Letters
Appl. Phys. Lett. 125, 191102 (2024)
https://doi.org/10.1063/5.0237714
Published: November 2024
View articletitled, Sensitive direct converting thin film x-ray detector utilizing β-Ga2O3 fabricated via MOCVD
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Journal Articles

The mechanism of degradation and failure in NiO/ β -Ga2O3 heterojunction diodes induced by the high-energy ion irradiation

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Song He, Junpeng Wen, Jinyang Liu, Weibing Hao, Xuanze Zhou, Tianqi Wang, Zhengliang Zhang, Jianli Liu, Guangwei Xu, Shu Yang, Shibing Long
Journal: Applied Physics Letters
Appl. Phys. Lett. 125, 162101 (2024)
https://doi.org/10.1063/5.0237616
Published: October 2024
View articletitled, The mechanism of degradation and failure in NiO/ β -Ga2O3 heterojunction diodes induced by the high-energy ion irradiation
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Journal Articles

Alpha particle detection based on low leakage and high-barrier vertical PtOx/β-Ga2O3 Schottky barrier diode

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Shiyu Bai, Xiaohu Hou, Xiangdong Meng, Lei Ren, Chen Li, Zhao Han, Shunjie Yu, Yan Liu, Zhixin Peng, Yuncheng Han, Xiaolong Zhao, Xuanze Zhou, Guangwei Xu, Shibing Long
Journal: Applied Physics Letters
Appl. Phys. Lett. 125, 061102 (2024)
https://doi.org/10.1063/5.0216689
Published: August 2024
View articletitled, Alpha particle detection based on low leakage and high-barrier vertical PtOx/β-Ga2O3 Schottky barrier diode
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Journal Articles

Stable Ga2O3 soft x-ray detector with ultrahigh responsivity

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Shunjie Yu, Yan Liu, Xiaohu Hou, Mengfan Ding, Yanni Zou, Yong Guan, Zhao Wu, Xiaolong Zhao, Qin Hu, Guangwei Xu, Shibing Long
Journal: Applied Physics Letters
Appl. Phys. Lett. 124, 181111 (2024)
https://doi.org/10.1063/5.0204816
Published: May 2024
View articletitled, Stable Ga2O3 soft x-ray detector with ultrahigh responsivity
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Journal Articles

Negative bias stress stable PtOx/InGaZnOx Schottky barrier diodes optimized by oxygen annealing

Open Access
Haoxin Li, Zhao Han, Xuanze Zhou, Guangwei Xu, Shibing Long
Journal: Journal of Applied Physics
J. Appl. Phys. 135, 114501 (2024)
https://doi.org/10.1063/5.0195890
Published: March 2024
View articletitled, Negative bias stress stable PtOx/InGaZnOx Schottky barrier diodes optimized by oxygen annealing
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Journal Articles

Oxygen vacancies and local amorphization introduced by high fluence neutron irradiation in β -Ga2O3 power diodes

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Jinyang Liu, Zhao Han, Lei Ren, Xiao Yang, Guangwei Xu, Weibing Hao, Xiaolong Zhao, Shu Yang, Di Lu, Yuncheng Han, Xiaohu Hou, Shibing Long
Journal: Applied Physics Letters
Appl. Phys. Lett. 123, 112106 (2023)
https://doi.org/10.1063/5.0161934
Published: September 2023
View articletitled, Oxygen vacancies and local amorphization introduced by high fluence neutron irradiation in β -Ga2O3 power diodes
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Journal Articles

Simulation studies of floating field plate in β-Ga2O3 power devices and modules

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Zhao Han, Guangwei Xu, Xueqiang Xiang, Weibing Hao, Yuanbiao Li, Xuanze Zhou, Xiaobing Yan, Shibing Long
Journal: Journal of Vacuum Science & Technology A
J. Vac. Sci. Technol. A 41, 053102 (2023)
https://doi.org/10.1116/6.0002650
Published: July 2023
View articletitled, Simulation studies of floating field plate in β-Ga2O3 power devices and modules
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Journal Articles

A core drain current model for β-Ga2O3 power MOSFETs based on surface potential

Open Access
Kai Zhou, Songming Miao, Xuanze Zhou, Guangwei Xu, Lingfei Wang, Shibing Long
Journal: AIP Advances
AIP Advances 13, 015202 (2023)
https://doi.org/10.1063/5.0134215
Published: January 2023
View articletitled, A core drain current model for β-Ga2O3 power MOSFETs based on surface potential
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Journal Articles

Enhancement-mode β-Ga2O3 U-shaped gate trench vertical MOSFET realized by oxygen annealing

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Xuanze Zhou, Yongjian Ma, Guangwei Xu, Qi Liu, Jinyang Liu, Qiming He, Xiaolong Zhao, Shibing Long
Journal: Applied Physics Letters
Appl. Phys. Lett. 121, 223501 (2022)
https://doi.org/10.1063/5.0130292
Published: November 2022
View articletitled, Enhancement-mode β-Ga2O3 U-shaped gate trench vertical MOSFET realized by oxygen annealing
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Journal Articles

Hysteresis-free Ga2O3 solar-blind phototransistor modulated from photoconduction to photogating effect

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Pengju Tan, Yanni Zou, Xiaolong Zhao, Xiaohu Hou, Zhongfang Zhang, Mengfan Ding, Shunjie Yu, Xiaolan Ma, Guangwei Xu, Qin Hu, Shibing Long
Journal: Applied Physics Letters
Appl. Phys. Lett. 120, 071106 (2022)
https://doi.org/10.1063/5.0078904
Published: February 2022
View articletitled, Hysteresis-free Ga2O3 solar-blind phototransistor modulated from photoconduction to photogating effect
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Journal Articles

Demonstration of AlGaN/GaN HEMTs on vicinal sapphire substrates with large misoriented angles

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Haochen Zhang, Yue Sun, Kang Song, Chong Xing, Lei Yang, Danhao Wang, Huabin Yu, Xueqiang Xiang, Nan Gao, Guangwei Xu, Haiding Sun, Shibing Long
Journal: Applied Physics Letters
Appl. Phys. Lett. 119, 072104 (2021)
https://doi.org/10.1063/5.0056285
Published: August 2021
View articletitled, Demonstration of AlGaN/GaN HEMTs on vicinal sapphire substrates with large misoriented angles
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Journal Articles

Demonstration of AlGaN/GaN-based ultraviolet phototransistor with a record high responsivity over 3.6 × 107 A/W

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Haochen Zhang, Fangzhou Liang, Kang Song, Chong Xing, Danhao Wang, Huabin Yu, Chen Huang, Yue Sun, Lei Yang, Xiaolong Zhao, Haiding Sun, Shibing Long
Journal: Applied Physics Letters
Appl. Phys. Lett. 118, 242105 (2021)
https://doi.org/10.1063/5.0055468
Published: June 2021
View articletitled, Demonstration of AlGaN/GaN-based ultraviolet phototransistor with a record high responsivity over 3.6 × 107 A/W
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Journal Articles

Investigation of quantum structure in N-polar deep-ultraviolet light-emitting diodes

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Hongfeng Jia, Huabin Yu, Yang Kang, Zhongjie Ren, Muhammad Hunain Memon, Wei Guo, Haiding Sun, Shibing Long
Journal: Journal of Applied Physics
J. Appl. Phys. 129, 133102 (2021)
https://doi.org/10.1063/5.0042712
Published: April 2021
View articletitled, Investigation of quantum structure in N-polar deep-ultraviolet light-emitting diodes
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Journal Articles

Low defect density and small I − V curve hysteresis in NiO/ β -Ga2O3 pn diode with a high PFOM of 0.65 GW/cm2

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Weibing Hao, Qiming He, Kai Zhou, Guangwei Xu, Wenhao Xiong, Xuanze Zhou, Guangzhong Jian, Chen Chen, Xiaolong Zhao, Shibing Long
Journal: Applied Physics Letters
Appl. Phys. Lett. 118, 043501 (2021)
https://doi.org/10.1063/5.0038349
Published: January 2021
View articletitled, Low defect density and small I − V curve hysteresis in NiO/ β -Ga2O3 pn diode with a high PFOM of 0.65 GW/cm2
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Journal Articles

Oxygen migration around the filament region in HfOx memristors

Open Access
Ge-Qi Mao, Kan-Hao Xue, Ya-Qian Song, Wei Wu, Jun-Hui Yuan, Li-Heng Li, Huajun Sun, Shibing Long, Xiang-Shui Miao
Journal: AIP Advances
AIP Advances 9, 105007 (2019)
https://doi.org/10.1063/1.5122989
Published: October 2019
View articletitled, Oxygen migration around the filament region in HfOx memristors
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