1-15 of 15
Seongjae Cho
Close
Save search
Follow your search
Access your saved searches in your account
Close Modal
Sort by
Journal Articles

Improvement of volatile switching in scaled silicon nanofin memristor for high performance and efficient reservoir computing

Dongyeol Ju, Jungwoo Lee, Sungjun Kim, Seongjae Cho
Journal: The Journal of Chemical Physics
J. Chem. Phys. 161, 014709 (2024)
https://doi.org/10.1063/5.0218677
Published: July 2024
View article titled, Improvement of volatile switching in scaled silicon nanofin memristor for high performance and efficient reservoir computing
Open the PDF for Improvement of volatile switching in scaled silicon nanofin memristor for high performance and efficient reservoir computing in another window
Journal Articles

Uniform multilevel switching and synaptic properties in RF-sputtered InGaZnO-based memristor treated with oxygen plasma

Chandreswar Mahata, Hyojin So, Seyeong Yang, Muhammad Ismail, Sungjun Kim, Seongjae Cho
Journal: The Journal of Chemical Physics
J. Chem. Phys. 159, 184712 (2023)
https://doi.org/10.1063/5.0179314
Published: November 2023
View article titled, Uniform multilevel switching and synaptic properties in RF-sputtered InGaZnO-based memristor treated with oxygen plasma
Open the PDF for Uniform multilevel switching and synaptic properties in RF-sputtered InGaZnO-based memristor treated with oxygen plasma in another window
Includes: Supplementary data
Journal Articles

Gas-phase etching mechanism of silicon oxide by a mixture of hydrogen fluoride and ammonium fluoride: A density functional theory study

Romel Hidayat, Khabib Khumaini, Hye-Lee Kim, Tanzia Chowdhury, Tirta Rona Mayangsari, Seongjae Cho, Byungchul Cho, Sangjoon Park, Jongwan Jung, Won-Jun Lee
Journal: Journal of Vacuum Science & Technology A
J. Vac. Sci. Technol. A 41, 032604 (2023)
https://doi.org/10.1116/6.0002433
Published: April 2023
View article titled, Gas-phase etching mechanism of silicon oxide by a mixture of hydrogen fluoride and ammonium fluoride: A density functional theory study
Open the PDF for Gas-phase etching mechanism of silicon oxide by a mixture of hydrogen fluoride and ammonium fluoride: A density functional theory study in another window
Includes: Supplementary data
Journal Articles

Fabrication and characterization of silicon nano-tip memristor for low-power neuromorphic application

Suhyun Bang, Sungjoon Kim, Kyungho Hong, Kannan Udaya Mohanan, Seongjae Cho, Woo Young Choi
Journal: AIP Advances
AIP Advances 12, 125217 (2022)
https://doi.org/10.1063/5.0117486
Published: December 2022
View article titled, Fabrication and characterization of silicon nano-tip memristor for low-power neuromorphic application
Open the PDF for Fabrication and characterization of silicon nano-tip memristor for low-power neuromorphic application in another window
Journal Articles

A polycrystalline-silicon dual-gate MOSFET-based 1T-DRAM using grain boundary-induced variable resistance

Young Jun Yoon, Jae Hwa Seo, Seongjae Cho, Jong-Ho Lee, In Man Kang
Journal: Applied Physics Letters
Appl. Phys. Lett. 114, 183503 (2019)
https://doi.org/10.1063/1.5090934
Published: May 2019
View article titled, A polycrystalline-silicon dual-gate MOSFET-based 1T-DRAM using grain boundary-induced variable resistance
Open the PDF for A polycrystalline-silicon dual-gate MOSFET-based 1T-DRAM using grain boundary-induced variable resistance in another window
Journal Articles

Integrate-and-fire neuron circuit using positive feedback field effect transistor for low power operation

Min-Woo Kwon, Myung-Hyun Baek, Sungmin Hwang, Kyungchul Park, Tejin Jang, Taehyung Kim, Junil Lee, Seongjae Cho, Byung-Gook Park
Journal: Journal of Applied Physics
J. Appl. Phys. 124, 152107 (2018)
https://doi.org/10.1063/1.5031929
Published: September 2018
View article titled, Integrate-and-fire neuron circuit using positive feedback field effect transistor for low power operation
Open the PDF for Integrate-and-fire neuron circuit using positive feedback field effect transistor for low power operation in another window
Journal Articles

Improved resistive switching properties in SiOx-based resistive random-access memory cell with Ti buffer layer

Sungjun Kim, Seongjae Cho, Byung-Gook Park
Journal: Journal of Vacuum Science & Technology B
J. Vac. Sci. Technol. B 34, 022204 (2016)
https://doi.org/10.1116/1.4943560
Published: March 2016
View article titled, Improved resistive switching properties in SiO<sub><em>x</em></sub>-based resistive random-access memory cell with Ti buffer layer
Open the PDF for Improved resistive switching properties in SiO<sub><em>x</em></sub>-based resistive random-access memory cell with Ti buffer layer in another window
Journal Articles

Fully Si compatible SiN resistive switching memory with large self-rectification ratio

Sungjun Kim, Seongjae Cho, Byung-Gook Park
Journal: AIP Advances
AIP Advances 6, 015021 (2016)
https://doi.org/10.1063/1.4941364
Published: January 2016
View article titled, Fully Si compatible SiN resistive switching memory with large self-rectification ratio
Open the PDF for Fully Si compatible SiN resistive switching memory with large self-rectification ratio in another window
Journal Articles

Low-temperature SiON films deposited by plasma-enhanced atomic layer deposition method using activated silicon precursor

Sungin Suh, Seung Wook Ryu, Seongjae Cho, Jun-Rae Kim, Seongkyung Kim, Cheol Seong Hwang, Hyeong Joon Kim
Journal: Journal of Vacuum Science & Technology A
J. Vac. Sci. Technol. A 34, 01A136 (2016)
https://doi.org/10.1116/1.4937734
Published: December 2015
View article titled, Low-temperature SiON films deposited by plasma-enhanced atomic layer deposition method using activated silicon precursor
Open the PDF for Low-temperature SiON films deposited by plasma-enhanced atomic layer deposition method using activated silicon precursor in another window
Journal Articles

Effects of conducting defects on resistive switching characteristics of SiNx-based resistive random-access memory with MIS structure

Sungjun Kim, Seongjae Cho, Kyung-Chang Ryoo, Byung-Gook Park
Journal: Journal of Vacuum Science & Technology B
J. Vac. Sci. Technol. B 33, 062201 (2015)
https://doi.org/10.1116/1.4931946
Published: September 2015
View article titled, Effects of conducting defects on resistive switching characteristics of SiN<sub><em>x</em></sub>-based resistive random-access memory with MIS structure
Open the PDF for Effects of conducting defects on resistive switching characteristics of SiN<sub><em>x</em></sub>-based resistive random-access memory with MIS structure in another window
Journal Articles

Resistive switching characteristics of Si3N4-based resistive-switching random-access memory cell with tunnel barrier for high density integration and low-power applications

Sungjun Kim, Sunghun Jung, Min-Hwi Kim, Seongjae Cho, Byung-Gook Park
Journal: Applied Physics Letters
Appl. Phys. Lett. 106, 212106 (2015)
https://doi.org/10.1063/1.4921926
Published: May 2015
View article titled, Resistive switching characteristics of Si<sub>3</sub>N<sub>4</sub>-based resistive-switching random-access memory cell with tunnel barrier for high density integration and low-power applications
Open the PDF for Resistive switching characteristics of Si<sub>3</sub>N<sub>4</sub>-based resistive-switching random-access memory cell with tunnel barrier for high density integration and low-power applications in another window
Journal Articles

Effects of ZrO2 doping on HfO2 resistive switching memory characteristics

Seung Wook Ryu, Seongjae Cho, Joonsuk Park, Jungsuk Kwac, Hyeong Joon Kim, Yoshio Nishi
Journal: Applied Physics Letters
Appl. Phys. Lett. 105, 072102 (2014)
https://doi.org/10.1063/1.4893568
Published: August 2014
View article titled, Effects of ZrO<sub>2</sub> doping on HfO<sub>2</sub> resistive switching memory characteristics
Open the PDF for Effects of ZrO<sub>2</sub> doping on HfO<sub>2</sub> resistive switching memory characteristics in another window
Journal Articles

Silicon-compatible high-hole-mobility transistor with an undoped germanium channel for low-power application

Seongjae Cho, In Man Kang, Kyung Rok Kim, Byung-Gook Park, James S. Harris, Jr.
Journal: Applied Physics Letters
Appl. Phys. Lett. 103, 222102 (2013)
https://doi.org/10.1063/1.4833295
Published: November 2013
View article titled, Silicon-compatible high-hole-mobility transistor with an undoped germanium channel for low-power application
Open the PDF for Silicon-compatible high-hole-mobility transistor with an undoped germanium channel for low-power application in another window
Journal Articles

Vertically Stackable Novel One‐Time Programmable Nonvolatile Memory Devices Based on Dielectric Breakdown Mechanism

Seongjae Cho, Jung Hoon Lee, Kyung‐Chang Ryoo, Sunghun Jung, Jong‐Ho Lee, Byung‐Gook Park
Journal: AIP Conference Proceedings
AIP Conf. Proc. 1399, 899–900 (2011)
https://doi.org/10.1063/1.3666666
Published: December 2011
View article titled, Vertically Stackable Novel One‐Time Programmable Nonvolatile Memory Devices Based on Dielectric Breakdown Mechanism
Open the PDF for Vertically Stackable Novel One‐Time Programmable Nonvolatile Memory Devices Based on Dielectric Breakdown Mechanism in another window
Journal Articles

Silicon-compatible compound semiconductor tunneling field-effect transistor for high performance and low standby power operation

Seongjae Cho, In Man Kang, Theodore I. Kamins, Byung-Gook Park, James S. Harris, Jr.
Journal: Applied Physics Letters
Appl. Phys. Lett. 99, 243505 (2011)
https://doi.org/10.1063/1.3670325
Published: December 2011
View article titled, Silicon-compatible compound semiconductor tunneling field-effect transistor for high performance and low standby power operation
Open the PDF for Silicon-compatible compound semiconductor tunneling field-effect transistor for high performance and low standby power operation in another window