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1-20 of 59
Seongil Im
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Journal Articles
Pt/β-Ga2O3 Schottky devices enabling 60 Hz half-wave rectification for power-efficient pixel display
Available to Purchase
Journal:
Applied Physics Letters
Appl. Phys. Lett. 125, 203507 (2024)
Published: November 2024
Journal Articles
2D WSe2/MoS2 van der Waals heterojunction photodiode for visible-near infrared broadband detection
Available to Purchase
Journal:
Applied Physics Letters
Appl. Phys. Lett. 113, 163102 (2018)
Published: October 2018
Includes: Supplementary data
Journal Articles
Instability of amorphous hafnium-indium-zinc-oxide thin film transistors under negative-bias-illumination stress
Available to Purchase
Journal:
Applied Physics Letters
Appl. Phys. Lett. 102, 223509 (2013)
Published: June 2013
Journal Articles
Annealing-induced conductivity transition in ZnO nanowires for field-effect devices
Available to Purchase
Journal:
Applied Physics Letters
Appl. Phys. Lett. 101, 043504 (2012)
Published: July 2012
Journal Articles
n-ZnO:N/p-Si nanowire photodiode prepared by atomic layer deposition
Available to Purchase
Journal:
Applied Physics Letters
Appl. Phys. Lett. 100, 041117 (2012)
Published: January 2012
Journal Articles
Self‐assembled organic channel/polymer dielectric layer for organic thin‐film transistor applications
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Journal:
AIP Conference Proceedings
AIP Conf. Proc. 1399, 847–848 (2011)
Published: December 2011
Journal Articles
ZnO nanowire transistor inverter using top-gate electrodes with different work functions
Available to Purchase
Journal:
Applied Physics Letters
Appl. Phys. Lett. 99, 153507 (2011)
Published: October 2011
Journal Articles
Photogating and electrical-gating of amorphous GaSnZnO-based inverter with light-transmitting gate electrode
Available to PurchaseHee Sung Lee, Kwang H. Lee, Youn-Gyoung Chang, Syed Raza Ali Raza, Seongil Im, Dong-Ho Kim, Hye-Ri Kim, Gun-Hwan Lee
Journal:
Applied Physics Letters
Appl. Phys. Lett. 98, 223505 (2011)
Published: June 2011
Journal Articles
Ferroelectric property improvement of poly(vinylidene fluoride/trifluoroethylene) polymer exposed to a plasma ambient
Available to Purchase
Journal:
Applied Physics Letters
Appl. Phys. Lett. 97, 162911 (2010)
Published: October 2010
Journal Articles
ZnO nanowire and mesowire for logic inverter fabrication
Available to Purchase
Journal:
Applied Physics Letters
Appl. Phys. Lett. 97, 123506 (2010)
Published: September 2010
Journal Articles
The influence of sputtering power and O 2 / Ar flow ratio on the performance and stability of Hf–In–Zn–O thin film transistors under illumination
Available to PurchaseHyun-Suk Kim, Kyung-Bae Park, Kyoung Seok Son, Joon Seok Park, Wan-Joo Maeng, Tae Sang Kim, Kwang-Hee Lee, Eok Su Kim, Jiyoul Lee, Joonki Suh, Jong-Baek Seon, Myung Kwan Ryu, Sang Yoon Lee, Kimoon Lee, Seongil Im
Journal:
Applied Physics Letters
Appl. Phys. Lett. 97, 102103 (2010)
Published: September 2010
Journal Articles
Density of trap states measured by photon probe into ZnO based thin-film transistors
Available to PurchaseKimoon Lee, Gunwoo Ko, Gun Hwan Lee, Gi bok Han, Myung M. Sung, Tae Woo Ha, Jae Hoon Kim, Seongil Im
Journal:
Applied Physics Letters
Appl. Phys. Lett. 97, 082110 (2010)
Published: August 2010
Journal Articles
Transparent photostable ZnO nonvolatile memory transistor with ferroelectric polymer and sputter-deposited oxide gate
Available to Purchase
Journal:
Applied Physics Letters
Appl. Phys. Lett. 95, 223506 (2009)
Published: December 2009
Journal Articles
Enhancing the retention properties of ZnO memory transistor by modifying the channel/ferroelectric polymer interface
Available to Purchase
Journal:
Applied Physics Letters
Appl. Phys. Lett. 95, 153502 (2009)
Published: October 2009
Journal Articles
The effect of localized surface plasmon on the photocurrent of silicon nanocrystal photodetectors
Available to Purchase
Journal:
Applied Physics Letters
Appl. Phys. Lett. 94, 183108 (2009)
Published: May 2009
Journal Articles
Flexible low voltage nonvolatile memory transistors with pentacene channel and ferroelectric polymer
Available to Purchase
Journal:
Applied Physics Letters
Appl. Phys. Lett. 94, 093304 (2009)
Published: March 2009
Journal Articles
Infrared spectroscopy of the interface charge in a ZnO field-effect transistor
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Journal:
Applied Physics Letters
Appl. Phys. Lett. 93, 241902 (2008)
Published: December 2008
Journal Articles
Determining the optimum pentacene channel thickness on hydrophobic and hydrophilic dielectric surface
Available to Purchase
Journal:
Applied Physics Letters
Appl. Phys. Lett. 93, 233301 (2008)
Published: December 2008
Journal Articles
ZnO-based low voltage inverter with low- k /high- k double polymer dielectric layer
Available to PurchaseKimoon Lee, Ki-tae Kim, Kwang H. Lee, Gyubaek Lee, Min Suk Oh, Jeong-M. Choi, Seongil Im, Sungjin Jang, Eugene Kim
Journal:
Applied Physics Letters
Appl. Phys. Lett. 93, 193514 (2008)
Published: November 2008
Journal Articles
Optimum channel thickness of rubrene thin-film transistors
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Journal:
Applied Physics Letters
Appl. Phys. Lett. 93, 043309 (2008)
Published: August 2008
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