1-12 of 12
Seokyoon Shin
Close
Save search
Follow your search
Access your saved searches in your account
Close Modal
Sort by
Journal Articles

Thin-film encapsulation of Al2O3 multidensity layer structure prepared by spatial atomic layer deposition

Hyunwoo Park, Seokyoon Shin, Hyeongsu Choi, Namgue Lee, Yeongtae Choi, Keunsik Kim, Hyeongtag Jeon
Journal: Journal of Vacuum Science & Technology A
J. Vac. Sci. Technol. A 38, 062403 (2020)
https://doi.org/10.1116/6.0000485
Published: September 2020
View article titled, Thin-film encapsulation of Al<sub>2</sub>O<sub>3</sub> multidensity layer structure prepared by spatial atomic layer deposition
Open the PDF for Thin-film encapsulation of Al<sub>2</sub>O<sub>3</sub> multidensity layer structure prepared by spatial atomic layer deposition in another window
Journal Articles

Effect of ozone concentration on atomic layer deposited tin oxide

Hyunwoo Park, Joohyun Park, Seokyoon Shin, Giyul Ham, Hyeongsu Choi, Seungjin Lee, Namgue Lee, Sejin Kwon, Minwook Bang, Juhyun Lee, Bumsik Kim, Hyeongtag Jeon
Journal: Journal of Vacuum Science & Technology A
J. Vac. Sci. Technol. A 36, 051509 (2018)
https://doi.org/10.1116/1.5027550
Published: August 2018
View article titled, Effect of ozone concentration on atomic layer deposited tin oxide
Open the PDF for Effect of ozone concentration on atomic layer deposited tin oxide in another window
Includes: Supplementary data
Journal Articles

Postdeposition annealing on VO2 films for resistive random-access memory selection devices

Heewoo Lim, Haewon Cho, Hyunjung Kim, Namgue Lee, Seokyoon Shin, Chanwon Jung, Hyunjun Kim, Kyungpil Lim, Hyeongtag Jeon
Journal: Journal of Vacuum Science & Technology A
J. Vac. Sci. Technol. A 36, 051501 (2018)
https://doi.org/10.1116/1.5021082
Published: July 2018
View article titled, Postdeposition annealing on VO<sub>2</sub> films for resistive random-access memory selection devices
Open the PDF for Postdeposition annealing on VO<sub>2</sub> films for resistive random-access memory selection devices in another window
Journal Articles

Remote plasma atomic layer deposition of silicon nitride with bis(dimethylaminomethyl-silyl)trimethylsilyl amine and N2 plasma for gate spacer

Woochool Jang, Hyunjung Kim, Youngkyun Kweon, Chanwon Jung, Haewon Cho, Seokyoon Shin, Hyunjun Kim, Kyungpil Lim, Hyeongtag Jeon, Heewoo Lim
Journal: Journal of Vacuum Science & Technology A
J. Vac. Sci. Technol. A 36, 031514 (2018)
https://doi.org/10.1116/1.5024605
Published: May 2018
View article titled, Remote plasma atomic layer deposition of silicon nitride with bis(dimethylaminomethyl-silyl)trimethylsilyl amine and N<sub>2</sub> plasma for gate spacer
Open the PDF for Remote plasma atomic layer deposition of silicon nitride with bis(dimethylaminomethyl-silyl)trimethylsilyl amine and N<sub>2</sub> plasma for gate spacer in another window
Journal Articles

Characteristics of layered tin disulfide deposited by atomic layer deposition with H2S annealing

Seungjin Lee, Seokyoon Shin, Giyul Ham, Juhyun Lee, Hyeongsu Choi, Hyunwoo Park, Hyeongtag Jeon
Journal: AIP Advances
AIP Advances 7, 045307 (2017)
https://doi.org/10.1063/1.4982068
Published: April 2017
View article titled, Characteristics of layered tin disulfide deposited by atomic layer deposition with H<sub>2</sub>S annealing
Open the PDF for Characteristics of layered tin disulfide deposited by atomic layer deposition with H<sub>2</sub>S annealing in another window
Journal Articles

Improved electrical properties of atomic layer deposited tin disulfide at low temperatures using ZrO2 layer

Juhyun Lee, Jeongsu Lee, Giyul Ham, Seokyoon Shin, Joohyun Park, Hyeongsu Choi, Seungjin Lee, Juyoung Kim, Onejae Sul, Seungbeck Lee, Hyeongtag Jeon
Journal: AIP Advances
AIP Advances 7, 025311 (2017)
https://doi.org/10.1063/1.4977887
Published: February 2017
View article titled, Improved electrical properties of atomic layer deposited tin disulfide at low temperatures using ZrO<sub>2</sub> layer
Open the PDF for Improved electrical properties of atomic layer deposited tin disulfide at low temperatures using ZrO<sub>2</sub> layer in another window
Journal Articles

Effect of scan speed on moisture barrier properties of aluminum oxide using spatial atomic layer deposition

Seokyoon Shin, Hagyoung Choi, Giyul Ham, Joohyun Park, Juhyun Lee, Hyeongsu Choi, Seungjin Lee, Hyunjung Kim, Hyeongtag Jeon
Journal: Journal of Vacuum Science & Technology A
J. Vac. Sci. Technol. A 35, 021514 (2017)
https://doi.org/10.1116/1.4976508
Published: February 2017
View article titled, Effect of scan speed on moisture barrier properties of aluminum oxide using spatial atomic layer deposition
Open the PDF for Effect of scan speed on moisture barrier properties of aluminum oxide using spatial atomic layer deposition in another window
Journal Articles

Dielectric barrier characteristics of Si-rich silicon nitride films deposited by plasma enhanced atomic layer deposition

Hwanwoo Kim, Hyoseok Song, Changhee Shin, Kangsoo Kim, Woochool Jang, Hyunjung Kim, Seokyoon Shin, Hyeongtag Jeon
Journal: Journal of Vacuum Science & Technology A
J. Vac. Sci. Technol. A 35, 01A101 (2017)
https://doi.org/10.1116/1.4964889
Published: November 2016
View article titled, Dielectric barrier characteristics of Si-rich silicon nitride films deposited by plasma enhanced atomic layer deposition
Open the PDF for Dielectric barrier characteristics of Si-rich silicon nitride films deposited by plasma enhanced atomic layer deposition in another window
Journal Articles

Improvement of the thermal stability of nickel silicide using a ruthenium interlayer deposited via remote plasma atomic layer deposition

Inhye Lee, Jingyu Park, Heeyoung Jeon, Hyunjung Kim, Changhee Shin, Seokyoon Shin, Kunyoung Lee, Hyeongtag Jeon
Journal: Journal of Vacuum Science & Technology A
J. Vac. Sci. Technol. A 34, 031502 (2016)
https://doi.org/10.1116/1.4943090
Published: March 2016
View article titled, Improvement of the thermal stability of nickel silicide using a ruthenium interlayer deposited via remote plasma atomic layer deposition
Open the PDF for Improvement of the thermal stability of nickel silicide using a ruthenium interlayer deposited via remote plasma atomic layer deposition in another window
Journal Articles

Fast spatial atomic layer deposition of Al2O3 at low temperature (<100 °C) as a gas permeation barrier for flexible organic light-emitting diode displays

Hagyoung Choi, Seokyoon Shin, Hyeongtag Jeon, Yeongtae Choi, Junghun Kim, Sanghun Kim, Seog Chul Chung, Kiyoung Oh
Journal: Journal of Vacuum Science & Technology A
J. Vac. Sci. Technol. A 34, 01A121 (2016)
https://doi.org/10.1116/1.4934752
Published: November 2015
View article titled, Fast spatial atomic layer deposition of Al<sub>2</sub>O<sub>3</sub> at low temperature (&lt;100 °C) as a gas permeation barrier for flexible organic light-emitting diode displays
Open the PDF for Fast spatial atomic layer deposition of Al<sub>2</sub>O<sub>3</sub> at low temperature (<100 °C) as a gas permeation barrier for flexible organic light-emitting diode displays in another window
Journal Articles

Al2O3 multi-density layer structure as a moisture permeation barrier deposited by radio frequency remote plasma atomic layer deposition

Hyunsoo Jung, Heeyoung Jeon, Hagyoung Choi, Giyul Ham, Seokyoon Shin, Hyeongtag Jeon
Journal: Journal of Applied Physics
J. Appl. Phys. 115, 073502 (2014)
https://doi.org/10.1063/1.4866001
Published: February 2014
View article titled, Al<sub>2</sub>O<sub>3</sub> multi-density layer structure as a moisture permeation barrier deposited by radio frequency remote plasma atomic layer deposition
Open the PDF for Al<sub>2</sub>O<sub>3</sub> multi-density layer structure as a moisture permeation barrier deposited by radio frequency remote plasma atomic layer deposition in another window
Journal Articles

Significant electrical control of amorphous oxide thin film transistors by an ultrathin Ti surface polarity modifier

Byungsu Cho, Yonghyuk Choi, Heeyoung Jeon, Seokyoon Shin, Hyungtak Seo, Hyeongtag Jeon
Journal: Applied Physics Letters
Appl. Phys. Lett. 104, 042103 (2014)
https://doi.org/10.1063/1.4862537
Published: January 2014
View article titled, Significant electrical control of amorphous oxide thin film transistors by an ultrathin Ti surface polarity modifier
Open the PDF for Significant electrical control of amorphous oxide thin film transistors by an ultrathin Ti surface polarity modifier in another window