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Journal Articles

Performance and application of combined system of liquid desiccant and R718 centrifugal heat pump

Hajime Yabase, Seiichi Yamaguchi, Kiyoshi Saito, Hiroshi Hasuike, Hayato Sakamoto, Satoru Matsumoto, Masatoshi Harada
Journal: AIP Conference Proceedings
AIP Conf. Proc. 2062, 020060 (2019)
https://doi.org/10.1063/1.5086607
Published: January 2019
View article titled, Performance and application of combined system of liquid desiccant and R718 centrifugal heat pump
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Journal Articles

Characteristics of BF 2 , Ga and In implanted Si after FLA and RTA annealing

Bo Wo, Yusuke Matsunaga, Siti Rahmah Binti Aid, Satoru Matsumoto, John Borland, Masayasu Tanjyo
Journal: AIP Conference Proceedings
AIP Conf. Proc. 1496, 179–182 (2012)
https://doi.org/10.1063/1.4766519
Published: November 2012
View article titled, Characteristics of BF 2 , Ga and In implanted Si after FLA and RTA annealing
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Journal Articles

Ultra‐Shallow P + / N Junction Formation in Si Using Low Temperature Solid Phase Epitaxy Assisted with Laser Activation

Shuhei Hara, Yuki Tanaka, Takumi Fukaya, Satoru Matsumoto, Toshiharu Suzuki, Genshu Fuse, Toshio Kudo, Susumu Sakuragi
Journal: AIP Conference Proceedings
AIP Conf. Proc. 1066, 79–82 (2008)
https://doi.org/10.1063/1.3033688
Published: November 2008
View article titled, Ultra‐Shallow P + / N Junction Formation in Si Using Low Temperature Solid Phase Epitaxy Assisted with Laser Activation
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Journal Articles

A silicon metal-oxide-semiconductor field-effect transistor Hall bar for scanning Hall probe microscopy

Akinobu Yamaguchi, Hiromasa Saito, Masayoshi Shimizu, Hideki Miyajima, Satoru Matsumoto, Yoshiharu Nakamura, Atsufumi Hirohata
Journal: Review of Scientific Instruments
Rev. Sci. Instrum. 79, 083703 (2008)
https://doi.org/10.1063/1.2968713
Published: August 2008
View article titled, A silicon metal-oxide-semiconductor field-effect transistor Hall bar for scanning Hall probe microscopy
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Journal Articles

Characterization of ultraviolet excited Br * ‐radical etching of InGaAs/InAlAs material system

Soheil Habibi, Jun Tanaka, Hideki Hattori, Masahiro Totsuka, Satoru Matsumoto
Journal: Journal of Applied Physics
J. Appl. Phys. 79, 4407–4413 (1996)
https://doi.org/10.1063/1.362703
Published: April 1996
View article titled, Characterization of ultraviolet excited Br * ‐radical etching of InGaAs/InAlAs material system
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Journal Articles

Dry sequential process of photochemical etching and surface passivation of In0.52Al0.48As using HBr and H2S

Soheil Habibi, Masahiro Totsuka, Jun Tanaka, Satoru Matsumoto
Journal: Journal of Vacuum Science & Technology B
J. Vac. Sci. Technol. B 13, 1466–1472 (1995)
https://doi.org/10.1116/1.588173
Published: July 1995
View article titled, Dry sequential process of photochemical etching and surface passivation of In<sub>0.52</sub>Al<sub>0.48</sub>As using HBr and H<sub>2</sub>S
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Journal Articles

Dry photochemical selective etching of InGaAs/InAlAs in HBr gas using a 172 nm excimer lamp

Soheil Habibi, Masahiro Totsuka, Jun Tanaka, Takeshi Kinoshita, Satoru Matsumoto, S. Iida
Journal: Journal of Vacuum Science & Technology B
J. Vac. Sci. Technol. B 13, 247–252 (1995)
https://doi.org/10.1116/1.588359
Published: March 1995
View article titled, Dry photochemical selective etching of InGaAs/InAlAs in HBr gas using a 172 nm excimer lamp
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Journal Articles

Excitonic photoluminescence in a CuAlSe2 chalcopyrite semiconductor grown by low‐pressure metalorganic chemical‐vapor deposition

Shigefusa Chichibu, Satoru Matsumoto, Sho Shirakata, Shigehiro Isomura, Hirofumi Higuchi
Journal: Journal of Applied Physics
J. Appl. Phys. 74, 6446–6447 (1993)
https://doi.org/10.1063/1.355129
Published: November 1993
View article titled, Excitonic photoluminescence in a CuAlSe<sub>2</sub> chalcopyrite semiconductor grown by low‐pressure metalorganic chemical‐vapor deposition
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Journal Articles

High‐frequency, step tunable, cyclotron harmonic gyrotron

Toshitaka Idehara, Toshiaki Tatsukawa, Hidehiko Tanabe, Satoru Matsumoto, Kohji Kunieda, Kazuhisa Hemmi, Tomohiro Kanemaki
Journal: Physics of Fluids B: Plasma Physics
Phys. Fluids B 3, 1766–1772 (1991)
https://doi.org/10.1063/1.859695
Published: July 1991
View article titled, High‐frequency, step tunable, cyclotron harmonic gyrotron
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Journal Articles

Effects of controlled As pressure annealing on deep levels of liquid‐encapsulated Czochralski GaAs single crystals

Shigefusa Chichibu, Norio Ohkubo, Satoru Matsumoto
Journal: Journal of Applied Physics
J. Appl. Phys. 64, 3987–3993 (1988)
https://doi.org/10.1063/1.341358
Published: October 1988
View article titled, Effects of controlled As pressure annealing on deep levels of liquid‐encapsulated Czochralski GaAs single crystals
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Journal Articles

Effect of carbon concentration on the thermal conversion of liquid‐encapsulated Czochralski semi‐insulating GaAs

Norio Ohkubo, Shigefusa Chichibu, Satoru Matsumoto
Journal: Applied Physics Letters
Appl. Phys. Lett. 53, 1054–1055 (1988)
https://doi.org/10.1063/1.100063
Published: September 1988
View article titled, Effect of carbon concentration on the thermal conversion of liquid‐encapsulated Czochralski semi‐insulating GaAs
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Journal Articles

Effect of carbon concentration on the electrical properties of liquid‐encapsulated Czochralski semi‐insulating GaAs

Shigefusa Chichibu, Satoru Matsumoto, Takeshi Obokata
Journal: Journal of Applied Physics
J. Appl. Phys. 62, 4316–4318 (1987)
https://doi.org/10.1063/1.339835
Published: November 1987
View article titled, Effect of carbon concentration on the electrical properties of liquid‐encapsulated Czochralski semi‐insulating GaAs
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Journal Articles

Growth characteristics of oxide precipitates in heavily doped silicon crystals

Satoru Matsumoto, Ichiro Ishihara, Hiroyuki Kaneko, Hirofumi Harada, Takao Abe
Journal: Applied Physics Letters
Appl. Phys. Lett. 46, 957–959 (1985)
https://doi.org/10.1063/1.95780
Published: May 1985
View article titled, Growth characteristics of oxide precipitates in heavily doped silicon crystals
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Journal Articles

The effect of Fowler–Nordheim tunneling current on thin SiO2 metal‐oxide‐semiconductor capacitors

Takashi Hosoi, Mitsuru Akizawa, Satoru Matsumoto
Journal: Journal of Applied Physics
J. Appl. Phys. 57, 2072–2076 (1985)
https://doi.org/10.1063/1.334399
Published: March 1985
View article titled, The effect of Fowler–Nordheim tunneling current on thin SiO<sub>2</sub> metal‐oxide‐semiconductor capacitors
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Journal Articles

Oxidation enhanced and concentration dependent diffusions of dopants in silicon

Satoru Matsumoto, Yutaka Ishikawa, Tatsuya Niimi
Journal: Journal of Applied Physics
J. Appl. Phys. 54, 5049–5054 (1983)
https://doi.org/10.1063/1.332776
Published: September 1983
View article titled, Oxidation enhanced and concentration dependent diffusions of dopants in silicon
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