1-8 of 8
Satinder K. Sharma
Close
Save search
Follow your search
Access your saved searches in your account
Close Modal
Sort by
Journal Articles

Novel process integration flow of germanium-on-silicon FinFETs for low-power technologies

Sumit Choudhary, Midathala Yogesh, Daniel Schwarz, Hannes S. Funk, Subrata Ghosh, Satinder K. Sharma, Jörg Schulze, Kenneth E. Gonsalves
Journal: Journal of Vacuum Science & Technology B
J. Vac. Sci. Technol. B 41, 052203 (2023)
https://doi.org/10.1116/6.0002767
Published: August 2023
View article titled, Novel process integration flow of germanium-on-silicon FinFETs for low-power technologies
Open the PDF for Novel process integration flow of germanium-on-silicon FinFETs for low-power technologies in another window
Includes: Supplementary data
Journal Articles

Metal (Pt)/ferroelectric (SrBi2Ta2O9)/insulator (La2O3)/semiconductor (Si), MFIS structures for nonvolatile memory applications

Shivendra K. Rathaur, Robin Khosla, Satinder K. Sharma
Journal: Applied Physics Letters
Appl. Phys. Lett. 119, 063505 (2021)
https://doi.org/10.1063/5.0055792
Published: August 2021
View article titled, Metal (Pt)/ferroelectric (SrBi<sub>2</sub>Ta<sub>2</sub>O<sub>9</sub>)/insulator (La<sub>2</sub>O<sub>3</sub>)/semiconductor (Si), MFIS structures for nonvolatile memory applications
Open the PDF for Metal (Pt)/ferroelectric (SrBi<sub>2</sub>Ta<sub>2</sub>O<sub>9</sub>)/insulator (La<sub>2</sub>O<sub>3</sub>)/semiconductor (Si), MFIS structures for nonvolatile memory applications in another window
Journal Articles

Substrate orientation dependent current transport mechanisms in β-Ga2O3/Si based Schottky barrier diodes

Manoj K Yadav, Arnab Mondal, Satinder K. Sharma, Ankush Bag
Journal: Journal of Vacuum Science & Technology A
J. Vac. Sci. Technol. A 39, 033203 (2021)
https://doi.org/10.1116/6.0000858
Published: March 2021
View article titled, Substrate orientation dependent current transport mechanisms in <em>β</em>-Ga<sub>2</sub>O<sub>3</sub>/Si based Schottky barrier diodes
Open the PDF for Substrate orientation dependent current transport mechanisms in <em>β</em>-Ga<sub>2</sub>O<sub>3</sub>/Si based Schottky barrier diodes in another window
Journal Articles

Integration of graphene oxide buffer layer/graphene floating gate for wide memory window in Pt/Ti/Al2O3/GO/graphene/SiO2/p-Si/Au non-volatile (FLASH) applications

Mahesh Soni, Ajay Soni, Satinder K. Sharma
Journal: Applied Physics Letters
Appl. Phys. Lett. 112, 252102 (2018)
https://doi.org/10.1063/1.5030020
Published: June 2018
View article titled, Integration of graphene oxide buffer layer/graphene floating gate for wide memory window in Pt/Ti/Al<sub>2</sub>O<sub>3</sub>/GO/graphene/SiO<sub>2</sub>/p-Si/Au non-volatile (FLASH) applications
Open the PDF for Integration of graphene oxide buffer layer/graphene floating gate for wide memory window in Pt/Ti/Al<sub>2</sub>O<sub>3</sub>/GO/graphene/SiO<sub>2</sub>/p-Si/Au non-volatile (FLASH) applications in another window
Journal Articles

Frequency dispersion and dielectric relaxation in postdeposition annealed high-κ erbium oxide metal–oxide–semiconductor capacitors

Robin Khosla, Satinder K. Sharma
Journal: Journal of Vacuum Science & Technology B
J. Vac. Sci. Technol. B 36, 012201 (2018)
https://doi.org/10.1116/1.4995809
Published: December 2017
View article titled, Frequency dispersion and dielectric relaxation in postdeposition annealed high-κ erbium oxide metal–oxide–semiconductor capacitors
Open the PDF for Frequency dispersion and dielectric relaxation in postdeposition annealed high-κ erbium oxide metal–oxide–semiconductor capacitors in another window
Journal Articles

High performance Au/PZT/TiOxNy/Si MFIS structure for next generation ferroelectric memory applications

Deepak K. Sharma, Robin Khosla, Satinder K. Sharma
Journal: AIP Conference Proceedings
AIP Conf. Proc. 1661, 060007 (2015)
https://doi.org/10.1063/1.4915377
Published: May 2015
View article titled, High performance Au/PZT/TiO<sub>x</sub>N<sub>y</sub>/Si MFIS structure for next generation ferroelectric memory applications
Open the PDF for High performance Au/PZT/TiO<sub>x</sub>N<sub>y</sub>/Si MFIS structure for next generation ferroelectric memory applications in another window
Journal Articles

Effect of electrical stress on Au/Pb (Zr0.52Ti0.48) O3/TiOxNy/Si gate stack for reliability analysis of ferroelectric field effect transistors

Robin Khosla, Deepak K. Sharma, Kunal Mondal, Satinder K. Sharma
Journal: Applied Physics Letters
Appl. Phys. Lett. 105, 152907 (2014)
https://doi.org/10.1063/1.4897952
Published: October 2014
View article titled, Effect of electrical stress on Au/Pb (Zr<sub>0.52</sub>Ti<sub>0.48</sub>) O<sub>3</sub>/TiO<sub>x</sub>N<sub>y</sub>/Si gate stack for reliability analysis of ferroelectric field effect transistors
Open the PDF for Effect of electrical stress on Au/Pb (Zr<sub>0.52</sub>Ti<sub>0.48</sub>) O<sub>3</sub>/TiO<sub>x</sub>N<sub>y</sub>/Si gate stack for reliability analysis of ferroelectric field effect transistors in another window
Journal Articles

Chalcogenide Glass Photoresists for Grayscale Patterning

Prabhat K. Dwivedi, Satinder K. Sharma, Amritha Rammohan, Ashutosh Sharma
Journal: AIP Conference Proceedings
AIP Conf. Proc. 1349, 555–556 (2011)
https://doi.org/10.1063/1.3605979
Published: July 2011
View article titled, Chalcogenide Glass Photoresists for Grayscale Patterning
Open the PDF for Chalcogenide Glass Photoresists for Grayscale Patterning in another window