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Journal Articles

Electron Monte Carlo simulations of single- and dual-frequency RF breakdown

Yusuke Yamashita, Vedanth Sharma, Saravanapriyan Sriraman, Kentaro Hara

Phys. Plasmas 32, 043509 (2025)

https://doi.org/10.1063/5.0257043

Published: April 2025

View articletitled, Electron Monte Carlo simulations of single- and dual-frequency RF breakdown

Journal Articles

Hysteresis between gas breakdown and plasma discharge

Yusuke Yamashita, Kentaro Hara, Saravanapriyan Sriraman

Phys. Plasmas 31, 073510 (2024)

https://doi.org/10.1063/5.0198151

Published: July 2024

View articletitled, Hysteresis between gas breakdown and plasma discharge

Journal Articles

Transient behavior in quasi-atomic layer etching of silicon dioxide and silicon nitride in fluorocarbon plasmas

Chad M. Huard, Saravanapriyan Sriraman, Alex Paterson, Mark J. Kushner

J. Vac. Sci. Technol. A 36, 06B101 (2018)

https://doi.org/10.1116/1.5049225

Published: October 2018

View articletitled, Transient behavior in quasi-atomic layer etching of silicon dioxide and silicon nitride in fluorocarbon plasmas

Journal Articles

Atomic layer etching of 3D structures in silicon: Self-limiting and nonideal reactions

Chad M. Huard, Yiting Zhang, Saravanapriyan Sriraman, Alex Paterson, Keren J. Kanarik, Mark J. Kushner

J. Vac. Sci. Technol. A 35, 031306 (2017)

https://doi.org/10.1116/1.4979661

Published: April 2017

View articletitled, Atomic layer etching of 3D structures in silicon: Self-limiting and nonideal reactions

Journal Articles

Role of neutral transport in aspect ratio dependent plasma etching of three-dimensional features

Chad M. Huard, Yiting Zhang, Saravanapriyan Sriraman, Alex Paterson, Mark J. Kushner

J. Vac. Sci. Technol. A 35, 05C301 (2017)

https://doi.org/10.1116/1.4973953

Published: January 2017

View articletitled, Role of neutral transport in aspect ratio dependent plasma etching of three-dimensional features

Journal Articles

Investigation of feature orientation and consequences of ion tilting during plasma etching with a three-dimensional feature profile simulator

Yiting Zhang, Chad Huard, Saravanapriyan Sriraman, Jun Belen, Alex Paterson, Mark J. Kushner

J. Vac. Sci. Technol. A 35, 021303 (2017)

https://doi.org/10.1116/1.4968392

Published: November 2016

View articletitled, Investigation of feature orientation and consequences of ion tilting during plasma etching with a three-dimensional feature profile simulator

Journal Articles

Control of ion energy and angular distributions in dual-frequency capacitively coupled plasmas through power ratios and phase: Consequences on etch profiles

Yiting Zhang, Mark J. Kushner, Saravanapriyan Sriraman, Alexei Marakhtanov, John Holland, Alex Paterson

J. Vac. Sci. Technol. A 33, 031302 (2015)

https://doi.org/10.1116/1.4915248

Published: March 2015

View articletitled, Control of ion energy and angular distributions in dual-frequency capacitively coupled plasmas through power ratios and phase: Consequences on etch profiles

Journal Articles

Overview of atomic layer etching in the semiconductor industry

Keren J. Kanarik, Thorsten Lill, Eric A. Hudson, Saravanapriyan Sriraman, Samantha Tan, Jeffrey Marks, Vahid Vahedi, Richard A. Gottscho

J. Vac. Sci. Technol. A 33, 020802 (2015)

https://doi.org/10.1116/1.4913379

Published: March 2015

View articletitled, Overview of atomic layer etching in the semiconductor industry

Journal Articles

Hydrogen-induced crystallization of amorphous silicon thin films. I. Simulation and analysis of film postgrowth treatment with H 2 plasmas

Saravanapriyan Sriraman, Mayur S. Valipa, Eray S. Aydil, Dimitrios Maroudas

J. Appl. Phys. 100, 053514 (2006)

https://doi.org/10.1063/1.2229426

Published: September 2006

View articletitled, Hydrogen-induced crystallization of amorphous silicon thin films. I. Simulation and analysis of film postgrowth treatment with H 2 plasmas

Journal Articles

Hydrogen-induced crystallization of amorphous Si thin films. II. Mechanisms and energetics of hydrogen insertion into Si–Si bonds

Mayur S. Valipa, Saravanapriyan Sriraman, Eray S. Aydil, Dimitrios Maroudas

J. Appl. Phys. 100, 053515 (2006)

https://doi.org/10.1063/1.2229429

Published: September 2006

View articletitled, Hydrogen-induced crystallization of amorphous Si thin films. II. Mechanisms and energetics of hydrogen insertion into Si–Si bonds

Journal Articles

Growth and characterization of hydrogenated amorphous silicon thin films from SiH 2 radical precursor: Atomic-scale analysis

Saravanapriyan Sriraman, Eray S. Aydil, Dimitrios Maroudas

J. Appl. Phys. 95, 1792–1805 (2004)

https://doi.org/10.1063/1.1636512

Published: February 2004

View articletitled, Growth and characterization of hydrogenated amorphous silicon thin films from SiH 2 radical precursor: Atomic-scale analysis

Journal Articles

Atomic-scale analysis of deposition and characterization of a-Si:H thin films grown from SiH radical precursor

Saravanapriyan Sriraman, Eray S. Aydil, Dimitrios Maroudas

J. Appl. Phys. 92, 842–852 (2002)

https://doi.org/10.1063/1.1483920

Published: July 2002

View articletitled, Atomic-scale analysis of deposition and characterization of a-Si:H thin films grown from SiH radical precursor

Journal Articles

Evolution of structure, morphology, and reactivity of hydrogenated amorphous silicon film surfaces grown by molecular-dynamics simulation

Shyam Ramalingam, Saravanapriyan Sriraman, Eray S. Aydil, Dimitrios Maroudas

Appl. Phys. Lett. 78, 2685–2687 (2001)

https://doi.org/10.1063/1.1367298

Published: April 2001

View articletitled, Evolution of structure, morphology, and reactivity of hydrogenated amorphous silicon film surfaces grown by molecular-dynamics simulation

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Electron Monte Carlo simulations of single- and dual-frequency RF breakdown

Hysteresis between gas breakdown and plasma discharge

Transient behavior in quasi-atomic layer etching of silicon dioxide and silicon nitride in fluorocarbon plasmas

Atomic layer etching of 3D structures in silicon: Self-limiting and nonideal reactions

Role of neutral transport in aspect ratio dependent plasma etching of three-dimensional features

Investigation of feature orientation and consequences of ion tilting during plasma etching with a three-dimensional feature profile simulator

Control of ion energy and angular distributions in dual-frequency capacitively coupled plasmas through power ratios and phase: Consequences on etch profiles

Overview of atomic layer etching in the semiconductor industry

Hydrogen-induced crystallization of amorphous silicon thin films. I. Simulation and analysis of film postgrowth treatment with H 2 plasmas

Hydrogen-induced crystallization of amorphous Si thin films. II. Mechanisms and energetics of hydrogen insertion into Si–Si bonds

Growth and characterization of hydrogenated amorphous silicon thin films from SiH 2 radical precursor: Atomic-scale analysis

Atomic-scale analysis of deposition and characterization of a-Si:H thin films grown from SiH radical precursor

Evolution of structure, morphology, and reactivity of hydrogenated amorphous silicon film surfaces grown by molecular-dynamics simulation

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