Page 1 | Search Results | AIP Publishing

1-20 of 24

Sort by

Sort Order Select

Journal Articles

Method for improving dry etching end point detection based on change in time accumulation correlation of plasma emitting wavelengths

Se-Jin Oh, Chang-Gil Son, Min-kyu Sohn, Doug-Yong Sung, Min-Sung Kim, Ji-Soo Im, Sang Ki Nam

J. Vac. Sci. Technol. B 41, 052204 (2023)

https://doi.org/10.1116/6.0002890

Published: September 2023

View article titled, Method for improving dry etching end point detection based on change in time accumulation correlation of plasma emitting wavelengths

Journal Articles

Real-time monitoring of atomic layer etching in Cl₂/Ar pulsed gas, pulsed power plasmas by optical emission spectroscopy

Qinzhen Hao, Pilbum Kim, Sang Ki Nam, Song-Yun Kang, Vincent M. Donnelly

J. Vac. Sci. Technol. A 41, 032605 (2023)

https://doi.org/10.1116/6.0002482

Published: April 2023

View article titled, Real-time monitoring of atomic layer etching in Cl2/Ar pulsed gas, pulsed power plasmas by optical emission spectroscopy

Journal Articles

Effect of focus ring with external circuit on cathode edge sheath dynamics in a capacitively coupled plasma

Yuhua Xiao, Joel Brandon, Joshua Morsell, Sang Ki Nam, KiHo Bae, Jang-Yeob Lee, Steven Shannon

J. Vac. Sci. Technol. A 41, 033008 (2023)

https://doi.org/10.1116/6.0002496

Published: April 2023

View article titled, Effect of focus ring with external circuit on cathode edge sheath dynamics in a capacitively coupled plasma

Journal Articles

Voltage waveform tailoring for high aspect ratio plasma etching of SiO₂ using Ar/CF₄/O₂ mixtures: Consequences of ion and electron distributions on etch profiles

Florian Krüger, Hyunjae Lee, Sang Ki Nam, Mark J. Kushner

J. Vac. Sci. Technol. A 41, 013006 (2023)

https://doi.org/10.1116/6.0002290

Published: December 2022

View article titled, Voltage waveform tailoring for high aspect ratio plasma etching of SiO2 using Ar/CF4/O2 mixtures: Consequences of ion and electron distributions on etch profiles

Journal Articles

Improving detection of plasma etching end point using light compensation on optical emission spectra

Se-Jin Oh, Doug-Yong Sung, Jung-Min Ko, Sang Ki Nam

J. Vac. Sci. Technol. B 40, 052206 (2022)

https://doi.org/10.1116/6.0002009

Published: September 2022

View article titled, Improving detection of plasma etching end point using light compensation on optical emission spectra

Journal Articles

Comparison of glancing-angle scatterings on different materials in a high aspect ratio plasma etching process using molecular dynamics simulation

Yao Du, Florian Krüger, Sang Ki Nam, Hoki Lee, Suyoung Yoo, Jacob Eapen, Mark J. Kushner, Steven Shannon

J. Vac. Sci. Technol. A 40, 053007 (2022)

https://doi.org/10.1116/6.0002008

Published: September 2022

View article titled, Comparison of glancing-angle scatterings on different materials in a high aspect ratio plasma etching process using molecular dynamics simulation

Journal Articles

Effects of N₂ and O₂ plasma treatments of quartz surfaces exposed to H₂ plasmas

Yingliang Zhou, Hanyang Li, Ji-Eun Jung, Sang Ki Nam, Vincent M. Donnelly

J. Vac. Sci. Technol. A 40, 053002 (2022)

https://doi.org/10.1116/6.0001896

Published: July 2022

View article titled, Effects of N2 and O2 plasma treatments of quartz surfaces exposed to H2 plasmas

Journal Articles

Modulating power delivery in a pulsed ICP discharge via the incorporation of negative feedback mechanisms

Carl L. Smith, Sang Ki Nam, Kiho Bae, Jang-Yeob Lee, Steven Shannon

J. Appl. Phys. 130, 163304 (2021)

https://doi.org/10.1063/5.0060240

Published: October 2021

View article titled, Modulating power delivery in a pulsed ICP discharge via the incorporation of negative feedback mechanisms

Journal Articles

Erosion of focus rings in capacitively coupled plasma etching reactors

Xifeng Wang, Hyunjae Lee, Sang Ki Nam, Mark J. Kushner

J. Vac. Sci. Technol. A 39, 063002 (2021)

https://doi.org/10.1116/6.0001225

Published: September 2021

View article titled, Erosion of focus rings in capacitively coupled plasma etching reactors

Journal Articles

Focus ring geometry influence on wafer edge voltage distribution for plasma processes

Yuhua Xiao, Yao Du, Carl Smith, Sang Ki Nam, Hoki Lee, Jang-Yeob Lee, Steven Shannon

J. Vac. Sci. Technol. A 39, 043006 (2021)

https://doi.org/10.1116/6.0000981

Published: June 2021

View article titled, Focus ring geometry influence on wafer edge voltage distribution for plasma processes

Journal Articles

Erratum: Power Matching to Pulsed Inductively Coupled Plasmas [J. Appl. Phys. 127, 133302 (2020)]

Chenhui Qu, Steven J. Lanham, Steven C. Shannon, Sang Ki Nam, Mark J. Kushner

J. Appl. Phys. 128, 089901 (2020)

https://doi.org/10.1063/5.0023888

Published: August 2020

View article titled, Erratum: Power Matching to Pulsed Inductively Coupled Plasmas [J. Appl. Phys. 127, 133302 (2020)]

Journal Articles

Power matching to pulsed inductively coupled plasmas

Chenhui Qu, Steven J. Lanham, Steven C. Shannon, Sang Ki Nam, Mark J. Kushner

J. Appl. Phys. 127, 133302 (2020)

https://doi.org/10.1063/5.0002522

Published: April 2020

View article titled, Power matching to pulsed inductively coupled plasmas

Journal Articles

Highly selective Si₃N₄/SiO₂ etching using an NF₃/N₂/O₂/H₂ remote plasma. I. Plasma source and critical fluxes

Vladimir Volynets, Yuri Barsukov, Gonjun Kim, Ji-Eun Jung, Sang Ki Nam, Kyuhee Han, Shuo Huang, Mark J. Kushner

J. Vac. Sci. Technol. A 38, 023007 (2020)

https://doi.org/10.1116/1.5125568

Published: January 2020

View article titled, Highly selective Si3N4/SiO2 etching using an NF3/N2/O2/H2 remote plasma. I. Plasma source and critical fluxes

Journal Articles

Highly selective Si₃N₄/SiO₂ etching using an NF₃/N₂/O₂/H₂ remote plasma. II. Surface reaction mechanism

Ji-Eun Jung, Yuri Barsukov, Vladimir Volynets, Gonjun Kim, Sang Ki Nam, Kyuhee Han, Shuo Huang, Mark J. Kushner

J. Vac. Sci. Technol. A 38, 023008 (2020)

https://doi.org/10.1116/1.5125569

Published: January 2020

Journal Articles

Pattern dependent profile distortion during plasma etching of high aspect ratio features in SiO₂

Shuo Huang, Seungbo Shim, Sang Ki Nam, Mark J. Kushner

J. Vac. Sci. Technol. A 38, 023001 (2020)

https://doi.org/10.1116/1.5132800

Published: January 2020

View article titled, Pattern dependent profile distortion during plasma etching of high aspect ratio features in SiO2

Journal Articles

Role of sulfur in catalyzing fluorine atom fast etching of silicon with smooth surface morphology

Priyanka Arora, Tam Nguyen, Aseem Chawla, Sang-Ki Nam, Vincent M. Donnelly

J. Vac. Sci. Technol. A 37, 061303 (2019)

https://doi.org/10.1116/1.5125266

Published: November 2019

View article titled, Role of sulfur in catalyzing fluorine atom fast etching of silicon with smooth surface morphology

Journal Articles

Plasma etching of high aspect ratio features in SiO₂ using Ar/C₄F₈/O₂ mixtures: A computational investigation

Shuo Huang, Chad Huard, Seungbo Shim, Sang Ki Nam, In-Cheol Song, Siqing Lu, Mark J. Kushner

J. Vac. Sci. Technol. A 37, 031304 (2019)

https://doi.org/10.1116/1.5090606

Published: April 2019

View article titled, Plasma etching of high aspect ratio features in SiO2 using Ar/C4F8/O2 mixtures: A computational investigation

Journal Articles

Measurement of localized plasma perturbation with hairpin resonator probes

Kristopher Ford, David J. Peterson, Joel Brandon, Sang Ki Nam, Dustin Walker, Steven C. Shannon

Phys. Plasmas 26, 013510 (2019)

https://doi.org/10.1063/1.5065509

Published: January 2019

View article titled, Measurement of localized plasma perturbation with hairpin resonator probes

Journal Articles

Downstream etching of silicon nitride using continuous-wave and pulsed remote plasma sources sustained in Ar/NF₃/O₂ mixtures

Shuo Huang, Vladimir Volynets, James R. Hamilton, Sang Ki Nam, In-Cheol Song, Siqing Lu, Jonathan Tennyson, Mark J. Kushner

J. Vac. Sci. Technol. A 36, 021305 (2018)

https://doi.org/10.1116/1.5019673

Published: February 2018

View article titled, Downstream etching of silicon nitride using continuous-wave and pulsed remote plasma sources sustained in Ar/NF3/O2 mixtures

Journal Articles

Role of NO in highly selective SiN/SiO₂ and SiN/Si etching with NF₃/O₂ remote plasma: Experiment and simulation

Yuri Barsukov, Vladimir Volynets, Sangjun Lee, Gonjun Kim, Byoungsu Lee, Sang Ki Nam, Kyuhee Han

J. Vac. Sci. Technol. A 35, 061310 (2017)

https://doi.org/10.1116/1.5004546

Published: October 2017

View article titled, Role of NO in highly selective SiN/SiO2 and SiN/Si etching with NF3/O2 remote plasma: Experiment and simulation

NARROW

Topics

Method for improving dry etching end point detection based on change in time accumulation correlation of plasma emitting wavelengths

Real-time monitoring of atomic layer etching in Cl₂/Ar pulsed gas, pulsed power plasmas by optical emission spectroscopy

Effect of focus ring with external circuit on cathode edge sheath dynamics in a capacitively coupled plasma

Voltage waveform tailoring for high aspect ratio plasma etching of SiO₂ using Ar/CF₄/O₂ mixtures: Consequences of ion and electron distributions on etch profiles

Improving detection of plasma etching end point using light compensation on optical emission spectra

Comparison of glancing-angle scatterings on different materials in a high aspect ratio plasma etching process using molecular dynamics simulation

Effects of N₂ and O₂ plasma treatments of quartz surfaces exposed to H₂ plasmas

Modulating power delivery in a pulsed ICP discharge via the incorporation of negative feedback mechanisms

Erosion of focus rings in capacitively coupled plasma etching reactors

Focus ring geometry influence on wafer edge voltage distribution for plasma processes

Erratum: Power Matching to Pulsed Inductively Coupled Plasmas [J. Appl. Phys. 127, 133302 (2020)]

Power matching to pulsed inductively coupled plasmas

Highly selective Si₃N₄/SiO₂ etching using an NF₃/N₂/O₂/H₂ remote plasma. I. Plasma source and critical fluxes

Highly selective Si₃N₄/SiO₂ etching using an NF₃/N₂/O₂/H₂ remote plasma. II. Surface reaction mechanism

Pattern dependent profile distortion during plasma etching of high aspect ratio features in SiO₂

Role of sulfur in catalyzing fluorine atom fast etching of silicon with smooth surface morphology

Plasma etching of high aspect ratio features in SiO₂ using Ar/C₄F₈/O₂ mixtures: A computational investigation

Measurement of localized plasma perturbation with hairpin resonator probes

Downstream etching of silicon nitride using continuous-wave and pulsed remote plasma sources sustained in Ar/NF₃/O₂ mixtures

Role of NO in highly selective SiN/SiO₂ and SiN/Si etching with NF₃/O₂ remote plasma: Experiment and simulation

Resources

Explore

pubs.aip.org

Connect with AIP Publishing

Resources

Explore

pubs.aip.org

Connect with AIP Publishing

This Feature Is Available To Subscribers Only