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Journal Articles

Bentonite and marconite for electrical grounding applications from geotechnical engineering perspective

M. Y. Mohd Tadza, D. Mohamad, S. Tripathy, R. A. Rahman, M. A. M. Ismail

AIP Conf. Proc. 2129, 020078 (2019)

https://doi.org/10.1063/1.5118086

Published: July 2019

View article titled, Bentonite and marconite for electrical grounding applications from geotechnical engineering perspective

Journal Articles

Ceramic with potential application of Kuantan nesosilicate (East Coast of Malaysia) in building construction: Mineralogy and physicochemical composition

M. Y. Mohd Tadza, A. A. Noraini, S. Tripathy

AIP Conf. Proc. 2129, 020073 (2019)

https://doi.org/10.1063/1.5118081

Published: July 2019

View article titled, Ceramic with potential application of Kuantan nesosilicate (East Coast of Malaysia) in building construction: Mineralogy and physicochemical composition

Journal Articles

Comparison of atomic layer deposited Al₂O₃ and (Ta₂O₅)_0.12(Al₂O₃)_0.88 gate dielectrics on the characteristics of GaN-capped AlGaN/GaN metal-oxide-semiconductor high electron mobility transistors

T. Partida-Manzanera, Z. H. Zaidi, J. W. Roberts, S. B. Dolmanan, K. B. Lee, P. A. Houston, P. R. Chalker, S. Tripathy, R. J. Potter

J. Appl. Phys. 126, 034102 (2019)

https://doi.org/10.1063/1.5049220

Published: July 2019

View article titled, Comparison of atomic layer deposited Al2O3 and (Ta2O5)0.12(Al2O3)0.88 gate dielectrics on the characteristics of GaN-capped AlGaN/GaN metal-oxide-semiconductor high electron mobility transistors

Includes: Supplementary data

Journal Articles

Comparative analysis of the effects of tantalum doping and annealing on atomic layer deposited (Ta₂O₅)_x(Al₂O₃)₁₋_x as potential gate dielectrics for GaN/Al_xGa_1−xN/GaN high electron mobility transistors

T. Partida-Manzanera, J. W. Roberts, T. N. Bhat, Z. Zhang, H. R. Tan, S. B. Dolmanan, N. Sedghi, S. Tripathy, R. J. Potter

J. Appl. Phys. 119, 025303 (2016)

https://doi.org/10.1063/1.4939298

Published: January 2016

View article titled, Comparative analysis of the effects of tantalum doping and annealing on atomic layer deposited (Ta2O5)x(Al2O3)1−x as potential gate dielectrics for GaN/AlxGa1−xN/GaN high electron mobility transistors

Includes: Supplementary data

Journal Articles

Comment on “Determination of alloy composition and strain in multiple AlGaN buffer layers in GaN/Si system” [Appl. Phys. Lett. 105 , 232113 (2014)]

H. F. Liu, S. B. Dolmanan, T. N. Bhat, S. Tripathy

Appl. Phys. Lett. 106, 176101 (2015)

https://doi.org/10.1063/1.4919592

Published: April 2015

View article titled, Comment on “Determination of alloy composition and strain in multiple AlGaN buffer layers in GaN/Si system” [Appl. Phys. Lett. 105 , 232113 (2014)]

Journal Articles

Excellent wear life of silicon nitride/tetrahedral amorphous carbon bilayer overcoat on functional tape heads

Reuben J. Yeo, Neeraj Dwivedi, S. Tripathy, C. S. Bhatia

Appl. Phys. Lett. 106, 091604 (2015)

https://doi.org/10.1063/1.4914353

Published: March 2015

View article titled, Excellent wear life of silicon nitride/tetrahedral amorphous carbon bilayer overcoat on functional tape heads

Includes: Supplementary data

Journal Articles

Electron velocity of 6 × 10⁷cm/s at 300 K in stress engineered InAlN/GaN nano-channel high-electron-mobility transistors

S. Arulkumaran, G. I. Ng, C. M. Manoj Kumar, K. Ranjan, K. L. Teo, O. F. Shoron, S. Rajan, S. Bin Dolmanan, S. Tripathy

Appl. Phys. Lett. 106, 053502 (2015)

https://doi.org/10.1063/1.4906970

Published: February 2015

View article titled, Electron velocity of 6 × 107 cm/s at 300 K in stress engineered InAlN/GaN nano-channel high-electron-mobility transistors

Includes: Supplementary data

Journal Articles

Durable ultrathin silicon nitride/carbon bilayer overcoats for magnetic heads: The role of enhanced interfacial bonding

Reuben J. Yeo, Neeraj Dwivedi, Lu Zhang, Zheng Zhang, Christina Y. H. Lim, S. Tripathy, Charanjit S. Bhatia

J. Appl. Phys. 117, 045310 (2015)

https://doi.org/10.1063/1.4906620

Published: January 2015

View article titled, Durable ultrathin silicon nitride/carbon bilayer overcoats for magnetic heads: The role of enhanced interfacial bonding

Journal Articles

Probing channel temperature profiles in Al_xGa_1−xN/GaN high electron mobility transistors on 200 mm diameter Si(111) by optical spectroscopy

L. M. Kyaw, L. K. Bera, Y. Liu, M. K. Bera, S. P. Singh, S. B. Dolmanan, H. R. Tan, T. N. Bhat, E. F. Chor, S. Tripathy

Appl. Phys. Lett. 105, 073504 (2014)

https://doi.org/10.1063/1.4893603

Published: August 2014

View article titled, Probing channel temperature profiles in AlxGa1−xN/GaN high electron mobility transistors on 200 mm diameter Si(111) by optical spectroscopy

Journal Articles

A pulse forming network (PFN) for compact plasma system (CPS) at Ravenshaw University, India

G. Sahoo, R. Paikaray, S. Samantaray, D. C. Patra, N. Sasini, S. Tripathy, S. R. Dash, A. Sahoo, J. Ghosh, A. K. Sanyasi

AIP Conf. Proc. 1536, 1290–1291 (2013)

https://doi.org/10.1063/1.4810714

Published: June 2013

View article titled, A pulse forming network (PFN) for compact plasma system (CPS) at Ravenshaw University, India

Journal Articles

Influence of stress on structural properties of AlGaN/GaN high electron mobility transistor layers grown on 150 mm diameter Si (111) substrate

H. F. Liu, S. B. Dolmanan, L. Zhang, S. J. Chua, D. Z. Chi, M. Heuken, S. Tripathy

J. Appl. Phys. 113, 023510 (2013)

https://doi.org/10.1063/1.4774288

Published: January 2013

View article titled, Influence of stress on structural properties of AlGaN/GaN high electron mobility transistor layers grown on 150 mm diameter Si (111) substrate

Journal Articles

Influence of catalytic gold and silver metal nanoparticles on structural, optical, and vibrational properties of silicon nanowires synthesized by metal-assisted chemical etching

M. K. Dawood, S. Tripathy, S. B. Dolmanan, T. H. Ng, H. Tan, J. Lam

J. Appl. Phys. 112, 073509 (2012)

https://doi.org/10.1063/1.4757009

Published: October 2012

View article titled, Influence of catalytic gold and silver metal nanoparticles on structural, optical, and vibrational properties of silicon nanowires synthesized by metal-assisted chemical etching

Includes: Supplementary data

Journal Articles

AlGaN/GaN two-dimensional-electron gas heterostructures on 200 mm diameter Si(111)

S. Tripathy, Vivian K. X. Lin, S. B. Dolmanan, Joyce P. Y. Tan, R. S. Kajen, L. K. Bera, S. L. Teo, M. Krishna Kumar, S. Arulkumaran, G. I. Ng, S. Vicknesh, Shane Todd, W. Z. Wang, G. Q. Lo, H. Li, D. Lee, S. Han

Appl. Phys. Lett. 101, 082110 (2012)

https://doi.org/10.1063/1.4746751

Published: August 2012

View article titled, AlGaN/GaN two-dimensional-electron gas heterostructures on 200 mm diameter Si(111)

Includes: Supplementary data

Journal Articles

On the surface magnetism induced atypical ferromagnetic behavior of cerium oxide (CeO₂) nanoparticles

M. Sakara, S. Arumugam, S. Tripathy, S. Balakumar

AIP Conf. Proc. 1447, 355–356 (2012)

https://doi.org/10.1063/1.4710026

Published: June 2012

View article titled, On the surface magnetism induced atypical ferromagnetic behavior of cerium oxide (CeO2) nanoparticles

Journal Articles

A new route to graphene layers by selective laser ablation

S. Dhar, A. Roy Barman, G. X. Ni, X. Wang, X. F. Xu, Y. Zheng, S. Tripathy, Ariando, A. Rusydi, K. P. Loh, M. Rubhausen, A. H. Castro Neto, B. Őzyilmaz, T. Venkatesan

AIP Advances 1, 022109 (2011)

https://doi.org/10.1063/1.3584204

Published: April 2011

View article titled, A new route to graphene layers by selective laser ablation

Journal Articles

Hydrogen-related n -type conductivity in hydrothermally grown epitaxial ZnO films

Y. B. Zhang, G. K. L. Goh, K. F. Ooi, S. Tripathy

J. Appl. Phys. 108, 083716 (2010)

https://doi.org/10.1063/1.3500353

Published: October 2010

View article titled, Hydrogen-related n -type conductivity in hydrothermally grown epitaxial ZnO films

Journal Articles

Effect of thermal annealing on properties of InSbN grown by molecular beam epitaxy

K. P. Lim, H. T. Pham, S. F. Yoon, C. Y. Ngo, S. Tripathy

Appl. Phys. Lett. 96, 161903 (2010)

https://doi.org/10.1063/1.3399775

Published: April 2010

View article titled, Effect of thermal annealing on properties of InSbN grown by molecular beam epitaxy

Journal Articles

Effect of indium content on performance and reliability of InGaN/GaN light-emitting diodes

Z. L. Li, S. Tripathy, P. T. Lai, H. W. Choi

J. Appl. Phys. 106, 094507 (2009)

https://doi.org/10.1063/1.3253754

Published: November 2009

View article titled, Effect of indium content on performance and reliability of InGaN/GaN light-emitting diodes

Journal Articles

Surface optical phonon and A 1 ( LO ) in ZnO submicron crystals probed by Raman scattering: Effects of morphology and dielectric coating

H. F. Liu, S. Tripathy, G. X. Hu, H. Gong

J. Appl. Phys. 105, 053507 (2009)

https://doi.org/10.1063/1.3087482

Published: March 2009

View article titled, Surface optical phonon and A 1 ( LO ) in ZnO submicron crystals probed by Raman scattering: Effects of morphology and dielectric coating

Journal Articles

Exciton recombination in ZnO nanorods grown on GaN/sapphire template

S. K. Mohanta, S. Tripathy, X. H. Zhang, D. C. Kim, C. B. Soh, A. M. Yong, W. Liu, H. K. Cho

Appl. Phys. Lett. 94, 041901 (2009)

https://doi.org/10.1063/1.3074366

Published: January 2009

View article titled, Exciton recombination in ZnO nanorods grown on GaN/sapphire template

NARROW

Topics

Bentonite and marconite for electrical grounding applications from geotechnical engineering perspective

Ceramic with potential application of Kuantan nesosilicate (East Coast of Malaysia) in building construction: Mineralogy and physicochemical composition

Comparison of atomic layer deposited Al₂O₃ and (Ta₂O₅)_0.12(Al₂O₃)_0.88 gate dielectrics on the characteristics of GaN-capped AlGaN/GaN metal-oxide-semiconductor high electron mobility transistors

Comparative analysis of the effects of tantalum doping and annealing on atomic layer deposited (Ta₂O₅)_x(Al₂O₃)₁₋_x as potential gate dielectrics for GaN/Al_xGa_1−xN/GaN high electron mobility transistors

Comment on “Determination of alloy composition and strain in multiple AlGaN buffer layers in GaN/Si system” [Appl. Phys. Lett. 105 , 232113 (2014)]

Excellent wear life of silicon nitride/tetrahedral amorphous carbon bilayer overcoat on functional tape heads

Electron velocity of 6 × 10⁷cm/s at 300 K in stress engineered InAlN/GaN nano-channel high-electron-mobility transistors

Durable ultrathin silicon nitride/carbon bilayer overcoats for magnetic heads: The role of enhanced interfacial bonding

Probing channel temperature profiles in Al_xGa_1−xN/GaN high electron mobility transistors on 200 mm diameter Si(111) by optical spectroscopy

A pulse forming network (PFN) for compact plasma system (CPS) at Ravenshaw University, India

Influence of stress on structural properties of AlGaN/GaN high electron mobility transistor layers grown on 150 mm diameter Si (111) substrate

Influence of catalytic gold and silver metal nanoparticles on structural, optical, and vibrational properties of silicon nanowires synthesized by metal-assisted chemical etching

AlGaN/GaN two-dimensional-electron gas heterostructures on 200 mm diameter Si(111)

On the surface magnetism induced atypical ferromagnetic behavior of cerium oxide (CeO₂) nanoparticles

A new route to graphene layers by selective laser ablation

Hydrogen-related n -type conductivity in hydrothermally grown epitaxial ZnO films

Effect of thermal annealing on properties of InSbN grown by molecular beam epitaxy

Effect of indium content on performance and reliability of InGaN/GaN light-emitting diodes

Surface optical phonon and A 1 ( LO ) in ZnO submicron crystals probed by Raman scattering: Effects of morphology and dielectric coating

Exciton recombination in ZnO nanorods grown on GaN/sapphire template

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