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Journal Articles

Lubrication effects on droplet manipulation by electrowetting-on-dielectric (EWOD)

K. Yamamoto, S. Takagi, Y. Ichikawa, M. Motosuke

J. Appl. Phys. 132, 204701 (2022)

https://doi.org/10.1063/5.0118241

Published: November 2022

View article titled, Lubrication effects on droplet manipulation by electrowetting-on-dielectric (EWOD)

Includes: Supplementary data

Journal Articles

Evaluation of interface traps inside the conduction band of InAs-on-insulator nMOSFET by self-consistent Hall-QSCV method

K. Sumita, K. Toprasertpong, M. Takenaka, S. Takagi

Appl. Phys. Lett. 119, 103501 (2021)

https://doi.org/10.1063/5.0057182

Published: September 2021

View article titled, Evaluation of interface traps inside the conduction band of InAs-on-insulator nMOSFET by self-consistent Hall-QSCV method

Journal Articles

Influence of layer transfer and thermal annealing on the properties of InAs-On-Insulator films

K. Sumita, J. Takeyasu, K. Toprasertpong, M. Takenaka, S. Takagi

J. Appl. Phys. 128, 015705 (2020)

https://doi.org/10.1063/5.0007978

Published: July 2020

View article titled, Influence of layer transfer and thermal annealing on the properties of InAs-On-Insulator films

Journal Articles

Effects of hydrogen ion implantation dose on physical and electrical properties of Ge-on-insulator layers fabricated by the smart-cut process

C.-M. Lim, Z. Zhao, K. Sumita, K. Toprasertpong, M. Takenaka, S. Takagi

AIP Advances 10, 015045 (2020)

https://doi.org/10.1063/1.5132881

Published: January 2020

View article titled, Effects of hydrogen ion implantation dose on physical and electrical properties of Ge-on-insulator layers fabricated by the smart-cut process

Journal Articles

Re-examination of effects of sulfur treatment on Al₂O₃/InGaAs metal-oxide-semiconductor interface properties

S.-H. Yoon, K. Kato, C. Yokoyama, D.-H. Ahn, M. Takenaka, S. Takagi

J. Appl. Phys. 126, 184501 (2019)

https://doi.org/10.1063/1.5111630

Published: November 2019

View article titled, Re-examination of effects of sulfur treatment on Al2O3/InGaAs metal-oxide-semiconductor interface properties

Journal Articles

Relationship between interface state generation and substrate hole current in InGaAs metal-oxide-semiconductor (MOS) interfaces

S.-H. Yoon, D.-H. Ahn, M. Takenaka, S. Takagi

J. Appl. Phys. 123, 234502 (2018)

https://doi.org/10.1063/1.5031052

Published: June 2018

View article titled, Relationship between interface state generation and substrate hole current in InGaAs metal-oxide-semiconductor (MOS) interfaces

Journal Articles

Design and properties of planar-type tunnel FETs using In_0.53Ga_0.47As/In_xGa_1-xAs/In_0.53Ga_0.47As quantum well

D.-H. Ahn, S.-M. Ji, M. Takenaka, S. Takagi

J. Appl. Phys. 122, 135704 (2017)

https://doi.org/10.1063/1.4992005

Published: October 2017

View article titled, Design and properties of planar-type tunnel FETs using In0.53Ga0.47As/InxGa1-xAs/In0.53Ga0.47As quantum well

Journal Articles

Modulation of sub-threshold properties of InGaAs MOSFETs by La₂O₃ gate dielectrics

C.-Y. Chang, K. Endo, K. Kato, M. Takenaka, S. Takagi

AIP Advances 7, 095215 (2017)

https://doi.org/10.1063/1.4999958

Published: September 2017

View article titled, Modulation of sub-threshold properties of InGaAs MOSFETs by La2O3 gate dielectrics

Journal Articles

Incident energy dependence of scattering behavior of water molecules on Si (100) and graphite surfaces

G. Kihara, Y. Kotsubo, Y. Yoshimoto, I. Kinefuchi, S. Takagi

AIP Conf. Proc. 1786, 100002 (2016)

https://doi.org/10.1063/1.4967613

Published: November 2016

View article titled, Incident energy dependence of scattering behavior of water molecules on Si (100) and graphite surfaces

Journal Articles

Properties of slow traps of ALD Al₂O₃/GeO_x/Ge nMOSFETs with plasma post oxidation

M. Ke, X. Yu, C. Chang, M. Takenaka, S. Takagi

Appl. Phys. Lett. 109, 032101 (2016)

https://doi.org/10.1063/1.4958890

Published: July 2016

View article titled, Properties of slow traps of ALD Al2O3/GeOx/Ge nMOSFETs with plasma post oxidation

Journal Articles

Low temperature formation of higher-k cubic phase HfO₂ by atomic layer deposition on GeO_x/Ge structures fabricated by in-situ thermal oxidation

R. Zhang, P.-C. Huang, N. Taoka, M. Yokoyama, M. Takenaka, S. Takagi

Appl. Phys. Lett. 108, 052903 (2016)

https://doi.org/10.1063/1.4941538

Published: February 2016

View article titled, Low temperature formation of higher-k cubic phase HfO2 by atomic layer deposition on GeOx/Ge structures fabricated by in-situ thermal oxidation

Journal Articles

Impact of La₂O₃ interfacial layers on InGaAs metal-oxide-semiconductor interface properties in Al₂O₃/La₂O₃/InGaAs gate stacks deposited by atomic-layer-deposition

C.-Y. Chang, O. Ichikawa, T. Osada, M. Hata, H. Yamada, M. Takenaka, S. Takagi

J. Appl. Phys. 118, 085309 (2015)

https://doi.org/10.1063/1.4929650

Published: August 2015

View article titled, Impact of La2O3 interfacial layers on InGaAs metal-oxide-semiconductor interface properties in Al2O3/La2O3/InGaAs gate stacks deposited by atomic-layer-deposition

Journal Articles

Operation of the GaSb p-channel metal-oxide-semiconductor field-effect transistors fabricated on (111)A surfaces

K. Nishi, M. Yokoyama, H. Yokoyama, T. Hoshi, H. Sugiyama, M. Takenaka, S. Takagi

Appl. Phys. Lett. 105, 233503 (2014)

https://doi.org/10.1063/1.4903837

Published: December 2014

View article titled, Operation of the GaSb p-channel metal-oxide-semiconductor field-effect transistors fabricated on (111)A surfaces

Journal Articles

Algebraic reconstruction combined with the signal space separation method for the inverse magnetoencephalography problem with a dipole-quadrupole source

T. Nara, K. Koiwa, S. Takagi, D. Oyama, G. Uehara

J. Appl. Phys. 115, 17E312 (2014)

https://doi.org/10.1063/1.4869066

Published: March 2014

View article titled, Algebraic reconstruction combined with the signal space separation method for the inverse magnetoencephalography problem with a dipole-quadrupole source

Journal Articles

Multiple spectra of electron spin resonance in chiral molecule-based magnets networked by a single chiral ligand

M. Mito, T. Nagano, K. Tsuruta, H. Deguchi, S. Takagi, J. Kishine, Y. Yoshida, K. Inoue

J. Appl. Phys. 114, 133901 (2013)

https://doi.org/10.1063/1.4821245

Published: October 2013

View article titled, Multiple spectra of electron spin resonance in chiral molecule-based magnets networked by a single chiral ligand

Includes: Supplementary data

Journal Articles

Measurements of time-of-flight distributions of shock-heated molecular beams

K. Osuka, Y. Yoshimoto, N. Miyoshi, I. Kinefuchi, S. Takagi, Y. Matsumoto

AIP Conf. Proc. 1501, 1182–1187 (2012)

https://doi.org/10.1063/1.4769675

Published: November 2012

View article titled, Measurements of time-of-flight distributions of shock-heated molecular beams

Journal Articles

1-nm-capacitance-equivalent-thickness HfO₂/Al₂O₃/InGaAs metal-oxide-semiconductor structure with low interface trap density and low gate leakage current density

R. Suzuki, N. Taoka, M. Yokoyama, S. Lee, S. H. Kim, T. Hoshii, T. Yasuda, W. Jevasuwan, T. Maeda, O. Ichikawa, N. Fukuhara, M. Hata, M. Takenaka, S. Takagi

Appl. Phys. Lett. 100, 132906 (2012)

https://doi.org/10.1063/1.3698095

Published: March 2012

View article titled, 1-nm-capacitance-equivalent-thickness HfO2/Al2O3/InGaAs metal-oxide-semiconductor structure with low interface trap density and low gate leakage current density

Journal Articles

Remote impurity scattering in Si MOSFETs with thin gate oxides ‐ possible screening effect by mobile charges in the gate electrodes ‐

K. H. Park, S. Takagi, K. Hirakawa

AIP Conf. Proc. 1399, 353–354 (2011)

https://doi.org/10.1063/1.3666399

Published: December 2011

View article titled, Remote impurity scattering in Si MOSFETs with thin gate oxides ‐ possible screening effect by mobile charges in the gate electrodes ‐

Journal Articles

A Study of Micro‐bubble Enhanced Sonoporation

A. Okamoto, R. Tachibana, K. Yoshinaka, K. Osada, S. Takagi, K. Kataoka, U. Chung, Y. Matsumoto

AIP Conf. Proc. 1359, 295–300 (2011)

https://doi.org/10.1063/1.3607921

Published: September 2011

View article titled, A Study of Micro‐bubble Enhanced Sonoporation

Journal Articles

Heating Location Control of HIFU Treatment Enhanced with Microbubbles

T. Nishihara, H. Utashiro, M. Ichiyanagi, K. Yoshinaka, S. Takagi, Y. Matsumoto

AIP Conf. Proc. 1359, 235–240 (2011)

https://doi.org/10.1063/1.3607911

Published: September 2011

View article titled, Heating Location Control of HIFU Treatment Enhanced with Microbubbles

NARROW

Topics

Lubrication effects on droplet manipulation by electrowetting-on-dielectric (EWOD)

Evaluation of interface traps inside the conduction band of InAs-on-insulator nMOSFET by self-consistent Hall-QSCV method

Influence of layer transfer and thermal annealing on the properties of InAs-On-Insulator films

Effects of hydrogen ion implantation dose on physical and electrical properties of Ge-on-insulator layers fabricated by the smart-cut process

Re-examination of effects of sulfur treatment on Al₂O₃/InGaAs metal-oxide-semiconductor interface properties

Relationship between interface state generation and substrate hole current in InGaAs metal-oxide-semiconductor (MOS) interfaces

Design and properties of planar-type tunnel FETs using In_0.53Ga_0.47As/In_xGa_1-xAs/In_0.53Ga_0.47As quantum well

Modulation of sub-threshold properties of InGaAs MOSFETs by La₂O₃ gate dielectrics

Incident energy dependence of scattering behavior of water molecules on Si (100) and graphite surfaces

Properties of slow traps of ALD Al₂O₃/GeO_x/Ge nMOSFETs with plasma post oxidation

Low temperature formation of higher-k cubic phase HfO₂ by atomic layer deposition on GeO_x/Ge structures fabricated by in-situ thermal oxidation

Impact of La₂O₃ interfacial layers on InGaAs metal-oxide-semiconductor interface properties in Al₂O₃/La₂O₃/InGaAs gate stacks deposited by atomic-layer-deposition

Operation of the GaSb p-channel metal-oxide-semiconductor field-effect transistors fabricated on (111)A surfaces

Algebraic reconstruction combined with the signal space separation method for the inverse magnetoencephalography problem with a dipole-quadrupole source

Multiple spectra of electron spin resonance in chiral molecule-based magnets networked by a single chiral ligand

Measurements of time-of-flight distributions of shock-heated molecular beams

1-nm-capacitance-equivalent-thickness HfO₂/Al₂O₃/InGaAs metal-oxide-semiconductor structure with low interface trap density and low gate leakage current density

Remote impurity scattering in Si MOSFETs with thin gate oxides ‐ possible screening effect by mobile charges in the gate electrodes ‐

A Study of Micro‐bubble Enhanced Sonoporation

Heating Location Control of HIFU Treatment Enhanced with Microbubbles

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