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Journal Articles

Electromigration-induced void evolution and failure of Cu/SiCN hybrid bonds

H. Ceric, H. Zahedmanesh, K. Croes, R. Lacerda de Orio, S. Selberherr

J. Appl. Phys. 133, 105101 (2023)

https://doi.org/10.1063/5.0134692

Published: March 2023

View articletitled, Electromigration-induced void evolution and failure of Cu/SiCN hybrid bonds

Journal Articles

Transient model for electrical activation of aluminium and phosphorus-implanted silicon carbide

V. Šimonka, A. Toifl, A. Hössinger, S. Selberherr, J. Weinbub

J. Appl. Phys. 123, 235701 (2018)

https://doi.org/10.1063/1.5031185

Published: June 2018

View articletitled, Transient model for electrical activation of aluminium and phosphorus-implanted silicon carbide

Journal Articles

Growth rates of dry thermal oxidation of 4H-silicon carbide

V. Šimonka, A. Hössinger, J. Weinbub, S. Selberherr

J. Appl. Phys. 120, 135705 (2016)

https://doi.org/10.1063/1.4964688

Published: October 2016

View articletitled, Growth rates of dry thermal oxidation of 4H-silicon carbide

Journal Articles

Modeling of microstructural effects on electromigration failure

H. Ceric, R. L. de Orio, W. Zisser, S. Selberherr

AIP Conf. Proc. 1601, 99–113 (2014)

https://doi.org/10.1063/1.4881344

Published: June 2014

View articletitled, Modeling of microstructural effects on electromigration failure

Journal Articles

Decoherence and time reversibility: The role of randomness at interfaces

J. M. Sellier, M. Nedjalkov, I. Dimov, S. Selberherr

J. Appl. Phys. 114, 174902 (2013)

https://doi.org/10.1063/1.4828736

Published: November 2013

View articletitled, Decoherence and time reversibility: The role of randomness at interfaces

Journal Articles

Wigner quasi-particle attributes—An asymptotic perspective

M. Nedjalkov, P. Schwaha, S. Selberherr, J. M. Sellier, D. Vasileska

Appl. Phys. Lett. 102, 163113 (2013)

https://doi.org/10.1063/1.4802931

Published: April 2013

View articletitled, Wigner quasi-particle attributes—An asymptotic perspective

Journal Articles

Stochastic model of the resistive switching mechanism in bipolar resistive random access memory: Monte Carlo simulations

A. Makarov, V. Sverdlov, S. Selberherr

J. Vac. Sci. Technol. B 29, 01AD03 (2011)

https://doi.org/10.1116/1.3521503

Published: January 2011

View articletitled, Stochastic model of the resistive switching mechanism in bipolar resistive random access memory: Monte Carlo simulations

Journal Articles

Stress‐Induced Anisotropy of Electromigration in Copper Interconnects

H. Ceric, R. Lacerda de Orio, J. Cervenka, S. Selberherr

AIP Conf. Proc. 1143, 56–62 (2009)

https://doi.org/10.1063/1.3169267

Published: June 2009

View articletitled, Stress‐Induced Anisotropy of Electromigration in Copper Interconnects

Journal Articles

Carbon Nanotube Based Transistors: A Computational Study

M. Pourfath, H. Kosina, S. Selberherr

AIP Conf. Proc. 893, 1041–1042 (2007)

https://doi.org/10.1063/1.2730253

Published: April 2007

View articletitled, Carbon Nanotube Based Transistors: A Computational Study

Journal Articles

Low‐Field Mobility in Strained Silicon Inversion Layers and UTB MOSFETs for Different Substrate Orientations

E. Ungersboeck, V. Sverdlov, H. Kosina, S. Selberherr

AIP Conf. Proc. 893, 1389–1390 (2007)

https://doi.org/10.1063/1.2730422

Published: April 2007

View articletitled, Low‐Field Mobility in Strained Silicon Inversion Layers and UTB MOSFETs for Different Substrate Orientations

Journal Articles

Microstructure and Stress Aspects of Electromigration Modeling

H. Ceric, R. Heinzl, Ch. Hollauer, T. Grasser, S. Selberherr

AIP Conf. Proc. 817, 262–268 (2006)

https://doi.org/10.1063/1.2173558

Published: February 2006

View articletitled, Microstructure and Stress Aspects of Electromigration Modeling

Journal Articles

Separated carrier injection control in carbon nanotube field-effect transistors

M. Pourfath, A. Gehring, E. Ungersboeck, H. Kosina, S. Selberherr, B. H. Cheong, W. J. Park

J. Appl. Phys. 97, 106103 (2005)

https://doi.org/10.1063/1.1897491

Published: May 2005

View articletitled, Separated carrier injection control in carbon nanotube field-effect transistors

Journal Articles

Nonparabolic macroscopic transport models for device simulation based on bulk Monte Carlo data

T. Grasser, R. Kosik, C. Jungemann, H. Kosina, S. Selberherr

J. Appl. Phys. 97, 093710 (2005)

https://doi.org/10.1063/1.1883311

Published: April 2005

View articletitled, Nonparabolic macroscopic transport models for device simulation based on bulk Monte Carlo data

Journal Articles

Monte Carlo method for modeling of small signal response including the Pauli exclusion principle

S. Smirnov, H. Kosina, M. Nedjalkov, S. Selberherr

J. Appl. Phys. 94, 5791–5799 (2003)

https://doi.org/10.1063/1.1616982

Published: November 2003

View articletitled, Monte Carlo method for modeling of small signal response including the Pauli exclusion principle

Journal Articles

The stationary Monte Carlo method for device simulation. II. Event biasing and variance estimation

M. Nedjalkov, H. Kosina, S. Selberherr

J. Appl. Phys. 93, 3564–3571 (2003)

https://doi.org/10.1063/1.1544655

Published: March 2003

View articletitled, The stationary Monte Carlo method for device simulation. II. Event biasing and variance estimation

Journal Articles

The stationary Monte Carlo method for device simulation. I. Theory

H. Kosina, M. Nedjalkov, S. Selberherr

J. Appl. Phys. 93, 3553–3563 (2003)

https://doi.org/10.1063/1.1544654

Published: March 2003

View articletitled, The stationary Monte Carlo method for device simulation. I. Theory

Journal Articles

Simulation of hot-electron oxide tunneling current based on a non-Maxwellian electron energy distribution function

A. Gehring, T. Grasser, H. Kosina, S. Selberherr

J. Appl. Phys. 92, 6019–6027 (2002)

https://doi.org/10.1063/1.1516617

Published: November 2002

View articletitled, Simulation of hot-electron oxide tunneling current based on a non-Maxwellian electron energy distribution function

Journal Articles

Characterization of the hot electron distribution function using six moments

T. Grasser, H. Kosina, C. Heitzinger, S. Selberherr

J. Appl. Phys. 91, 3869–3879 (2002)

https://doi.org/10.1063/1.1450257

Published: March 2002

View articletitled, Characterization of the hot electron distribution function using six moments

Journal Articles

Transient model for terminal current noise

M. Nedjalkov, T. Grasser, H. Kosina, S. Selberherr

Appl. Phys. Lett. 80, 607–609 (2002)

https://doi.org/10.1063/1.1447002

Published: January 2002

View articletitled, Transient model for terminal current noise

Journal Articles

Accurate impact ionization model which accounts for hot and cold carrier populations

T. Grasser, H. Kosina, C. Heitzinger, S. Selberherr

Appl. Phys. Lett. 80, 613–615 (2002)

https://doi.org/10.1063/1.1445273

Published: January 2002

View articletitled, Accurate impact ionization model which accounts for hot and cold carrier populations

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Electromigration-induced void evolution and failure of Cu/SiCN hybrid bonds

Transient model for electrical activation of aluminium and phosphorus-implanted silicon carbide

Growth rates of dry thermal oxidation of 4H-silicon carbide

Modeling of microstructural effects on electromigration failure

Decoherence and time reversibility: The role of randomness at interfaces

Wigner quasi-particle attributes—An asymptotic perspective

Stochastic model of the resistive switching mechanism in bipolar resistive random access memory: Monte Carlo simulations

Stress‐Induced Anisotropy of Electromigration in Copper Interconnects

Carbon Nanotube Based Transistors: A Computational Study

Low‐Field Mobility in Strained Silicon Inversion Layers and UTB MOSFETs for Different Substrate Orientations

Microstructure and Stress Aspects of Electromigration Modeling

Separated carrier injection control in carbon nanotube field-effect transistors

Nonparabolic macroscopic transport models for device simulation based on bulk Monte Carlo data

Monte Carlo method for modeling of small signal response including the Pauli exclusion principle

The stationary Monte Carlo method for device simulation. II. Event biasing and variance estimation

The stationary Monte Carlo method for device simulation. I. Theory

Simulation of hot-electron oxide tunneling current based on a non-Maxwellian electron energy distribution function

Characterization of the hot electron distribution function using six moments

Transient model for terminal current noise

Accurate impact ionization model which accounts for hot and cold carrier populations

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