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Journal Articles

Effective dopant activation by susceptor-assisted microwave annealing of low energy boron implanted and phosphorus implanted silicon

Zhao Zhao, N. David Theodore, Rajitha N. P. Vemuri, Wei Lu, S. S. Lau, A. Lanz, T. L. Alford
Journal: Journal of Applied Physics
J. Appl. Phys. 114, 244903 (2013)
https://doi.org/10.1063/1.4858404
Published: December 2013
View article titled, Effective dopant activation by susceptor-assisted microwave annealing of low energy boron implanted and phosphorus implanted silicon
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Journal Articles

Effective dopant activation via low temperature microwave annealing of ion implanted silicon

Zhao Zhao, N. David Theodore, Rajitha N. P. Vemuri, Sayantan Das, Wei Lu, S. S. Lau, T. L. Alford
Journal: Applied Physics Letters
Appl. Phys. Lett. 103, 192103 (2013)
https://doi.org/10.1063/1.4829153
Published: November 2013
View article titled, Effective dopant activation via low temperature microwave annealing of ion implanted silicon
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Journal Articles

Thermal and microwave characterization of GaAs to Si metal-bonded structures

Justin R. Bickford, P. K. L. Yu, S. S. Lau
Journal: Journal of Applied Physics
J. Appl. Phys. 114, 123515 (2013)
https://doi.org/10.1063/1.4824063
Published: September 2013
View article titled, Thermal and microwave characterization of GaAs to Si metal-bonded structures
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Journal Articles

A study of single-crystal silicon diodes integrated on flexible substrates using conductive adhesives

C. Doran, W. Chen, T. L. Alford, S. S. Lau
Journal: Applied Physics Letters
Appl. Phys. Lett. 100, 072103 (2012)
https://doi.org/10.1063/1.3684970
Published: February 2012
View article titled, A study of single-crystal silicon diodes integrated on flexible substrates using conductive adhesives
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Journal Articles

Susceptor assisted microwave annealing for recrystallization and dopant activation of arsenic-implanted silicon

Rajitha N. P. Vemuri, Mandar J. Gadre, N. D. Theodore, W. Chen, S. S. Lau, T. L. Alford
Journal: Journal of Applied Physics
J. Appl. Phys. 110, 034907 (2011)
https://doi.org/10.1063/1.3622287
Published: August 2011
View article titled, Susceptor assisted microwave annealing for recrystallization and dopant activation of arsenic-implanted silicon
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Journal Articles

High electron mobility transistors on plastic flexible substrates

Wayne Chen, T. L. Alford, T. F. Kuech, S. S. Lau
Journal: Applied Physics Letters
Appl. Phys. Lett. 98, 203509 (2011)
https://doi.org/10.1063/1.3593006
Published: May 2011
View article titled, High electron mobility transistors on plastic flexible substrates
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Journal Articles

Effects of hydrogen implantation damage on the performance of InP/InGaAs/InP p - i - n photodiodes transferred on silicon

Peng Chen, Winnie V. Chen, Paul K. L. Yu, Chak Wah Tang, Kei May Lau, Luke Mawst, Charles Paulson, T. F. Kuech, S. S. Lau
Journal: Applied Physics Letters
Appl. Phys. Lett. 94, 012101 (2009)
https://doi.org/10.1063/1.3062848
Published: January 2009
View article titled, Effects of hydrogen implantation damage on the performance of InP/InGaAs/InP p - i - n photodiodes transferred on silicon
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Journal Articles

Integration of vertical InAs nanowire arrays on insulator-on-silicon for electrical isolation

Shadi A. Dayeh, Peng Chen, Yi Jing, Edward T. Yu, S. S. Lau, Deli Wang
Journal: Applied Physics Letters
Appl. Phys. Lett. 93, 203109 (2008)
https://doi.org/10.1063/1.3013566
Published: November 2008
View article titled, Integration of vertical InAs nanowire arrays on insulator-on-silicon for electrical isolation
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Journal Articles

Integration of thin layers of single-crystalline InP with flexible substrates

Wayne Chen, Peng Chen, J. E. Pulsifer, T. L. Alford, T. F. Kuech, S. S. Lau
Journal: Applied Physics Letters
Appl. Phys. Lett. 92, 212109 (2008)
https://doi.org/10.1063/1.2937409
Published: May 2008
View article titled, Integration of thin layers of single-crystalline InP with flexible substrates
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Journal Articles

Effects of hydrogen implantation temperature on InP surface blistering

Peng Chen, Zengfeng Di, M. Nastasi, Elena Bruno, Maria Grazia Grimaldi, N. David Theodore, S. S. Lau
Journal: Applied Physics Letters
Appl. Phys. Lett. 92, 202107 (2008)
https://doi.org/10.1063/1.2926682
Published: May 2008
View article titled, Effects of hydrogen implantation temperature on InP surface blistering
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Journal Articles

High crystalline-quality III-V layer transfer onto Si substrate

Peng Chen, Yi Jing, S. S. Lau, Dapeng Xu, Luke Mawst, T. L. Alford, Charles Paulson, T. F. Kuech
Journal: Applied Physics Letters
Appl. Phys. Lett. 92, 092107 (2008)
https://doi.org/10.1063/1.2890494
Published: March 2008
View article titled, High crystalline-quality III-V layer transfer onto Si substrate
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Journal Articles

Microwave enhanced ion-cut silicon layer transfer

D. C. Thompson, T. L. Alford, J. W. Mayer, T. Höchbauer, J. K. Lee, M. Nastasi, S. S. Lau, N. David Theodore, Paul K. Chu
Journal: Journal of Applied Physics
J. Appl. Phys. 101, 114915 (2007)
https://doi.org/10.1063/1.2737387
Published: June 2007
View article titled, Microwave enhanced ion-cut silicon layer transfer
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Journal Articles

Double-flip transfer of indium phosphide layers via adhesive wafer bonding and ion-cutting process

Wayne Chen, Peng Chen, Yi Jing, S. S. Lau, T. F. Kuech, Jiariu Liu, Xeimei Wang, Wei-Kan Chu
Journal: Applied Physics Letters
Appl. Phys. Lett. 90, 052114 (2007)
https://doi.org/10.1063/1.2450665
Published: February 2007
View article titled, Double-flip transfer of indium phosphide layers via adhesive wafer bonding and ion-cutting process
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Journal Articles

Electrical characterization of GaAs metal bonded to Si

Justin R. Bickford, D. Qiao, P. K. L. Yu, S. S. Lau
Journal: Applied Physics Letters
Appl. Phys. Lett. 89, 012106 (2006)
https://doi.org/10.1063/1.2219980
Published: July 2006
View article titled, Electrical characterization of GaAs metal bonded to Si
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Journal Articles

Effect of substrate growth temperatures on H diffusion in hydrogenated Si ∕ Si homoepitaxial structures grown by molecular beam epitaxy

Lin Shao, J. K. Lee, Y. Q. Wang, M. Nastasi, Phillip E. Thompson, N. David Theodore, T. L. Alford, J. W. Mayer, Peng Chen, S. S. Lau
Journal: Journal of Applied Physics
J. Appl. Phys. 99, 126105 (2006)
https://doi.org/10.1063/1.2204330
Published: June 2006
View article titled, Effect of substrate growth temperatures on H diffusion in hydrogenated Si ∕ Si homoepitaxial structures grown by molecular beam epitaxy
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Journal Articles

H-induced platelet and crack formation in hydrogenated epitaxial Si ∕ Si 0.98 B 0.02 ∕ Si structures

Lin Shao, Yuan Lin, J. G. Swadener, J. K. Lee, Q. X. Jia, Y. Q. Wang, M. Nastasi, Phillip E. Thompson, N. David Theodore, T. L. Alford, J. W. Mayer, Peng Chen, S. S. Lau
Journal: Applied Physics Letters
Appl. Phys. Lett. 88, 021901 (2006)
https://doi.org/10.1063/1.2163992
Published: January 2006
View article titled, H-induced platelet and crack formation in hydrogenated epitaxial Si ∕ Si 0.98 B 0.02 ∕ Si structures
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Journal Articles

Strain-facilitated process for the lift-off of a Si layer of less than 20 nm thickness

Lin Shao, Yuan Lin, J. G. Swadener, J. K. Lee, Q. X. Jia, Y. Q. Wang, M. Nastasi, Phillip E. Thompson, N. David Theodore, T. L. Alford, J. W. Mayer, Peng Chen, S. S. Lau
Journal: Applied Physics Letters
Appl. Phys. Lett. 87, 251907 (2005)
https://doi.org/10.1063/1.2146211
Published: December 2005
View article titled, Strain-facilitated process for the lift-off of a Si layer of less than 20 nm thickness
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Journal Articles

Microwave-cut silicon layer transfer

D. C. Thompson, T. L. Alford, J. W. Mayer, T. Hochbauer, M. Nastasi, S. S. Lau, N. David Theodore, K. Henttinen, llkka Suni, Paul K. Chu
Journal: Applied Physics Letters
Appl. Phys. Lett. 87, 224103 (2005)
https://doi.org/10.1063/1.2135395
Published: November 2005
View article titled, Microwave-cut silicon layer transfer
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Journal Articles

Silicon layer transfer using plasma hydrogenation

Peng Chen, S. S. Lau, Paul K. Chu, K. Henttinen, T. Suni, I. Suni, N. David Theodore, T. L. Alford, J. W. Mayer, Lin Shao, M. Nastasi
Journal: Applied Physics Letters
Appl. Phys. Lett. 87, 111910 (2005)
https://doi.org/10.1063/1.2048811
Published: September 2005
View article titled, Silicon layer transfer using plasma hydrogenation
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Journal Articles

Plasma hydrogenation of strained Si ∕ SiGe ∕ Si heterostructure for layer transfer without ion implantation

Lin Shao, Yuan Lin, J. K. Lee, Q. X. Jia, Yongqiang Wang, M. Nastasi, Phillip E. Thompson, N. David Theodore, Paul K. Chu, T. L. Alford, J. W. Mayer, Peng Chen, S. S. Lau
Journal: Applied Physics Letters
Appl. Phys. Lett. 87, 091902 (2005)
https://doi.org/10.1063/1.2032602
Published: August 2005
View article titled, Plasma hydrogenation of strained Si ∕ SiGe ∕ Si heterostructure for layer transfer without ion implantation
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