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S. P. McAlister
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Journal Articles

A flexible organic pentacene nonvolatile memory based on high- κ dielectric layers

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Ming-Feng Chang, Po-Tsung Lee, S. P. McAlister, Albert Chin
Journal: Applied Physics Letters
Appl. Phys. Lett. 93, 233302 (2008)
https://doi.org/10.1063/1.3046115
Published: December 2008
View articletitled, A flexible organic pentacene nonvolatile memory based on high- κ dielectric layers
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Journal Articles

Self-heating and the temperature dependence of the dc characteristics of GaN heterostructure field effect transistors

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S. P. McAlister, J. A. Bardwell, S. Haffouz, H. Tang
Journal: Journal of Vacuum Science & Technology A
J. Vac. Sci. Technol. A 24, 624–628 (2006)
https://doi.org/10.1116/1.2172921
Published: May 2006
View articletitled, Self-heating and the temperature dependence of the dc characteristics of GaN heterostructure field effect transistors
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Journal Articles

Performance and potential of germanium on insulator field-effect transistors

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D. S. Yu, H. L. Kao, A. Chin, S. P. McAlister
Journal: Journal of Vacuum Science & Technology A
J. Vac. Sci. Technol. A 24, 690–693 (2006)
https://doi.org/10.1116/1.2167978
Published: May 2006
View articletitled, Performance and potential of germanium on insulator field-effect transistors
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Journal Articles

GaAsNSb-base GaAs heterojunction bipolar transistor with a low turn-on voltage

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K. L. Lew, S. F. Yoon, H. Wang, S. Wicaksono, J. A. Gupta, S. P. McAlister
Journal: Journal of Vacuum Science & Technology B
J. Vac. Sci. Technol. B 24, 1308–1310 (2006)
https://doi.org/10.1116/1.2200376
Published: May 2006
View articletitled, GaAsNSb-base GaAs heterojunction bipolar transistor with a low turn-on voltage
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Journal Articles

Broad-spectrum light emission at microscopic breakdown sites in metal-insulator-silicon tunnel diodes

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J. G. Mihaychuk, M. W. Denhoff, S. P. McAlister, W. R. McKinnon, A. Chin
Journal: Journal of Applied Physics
J. Appl. Phys. 98, 054502 (2005)
https://doi.org/10.1063/1.2031946
Published: September 2005
View articletitled, Broad-spectrum light emission at microscopic breakdown sites in metal-insulator-silicon tunnel diodes
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Journal Articles

Temperature distribution and heating in multiple emitter SiGe HBTs

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S. P. McAlister, W. R. McKinnon, S. J. Kovacic, H. Lafontaine
Journal: Journal of Vacuum Science & Technology A
J. Vac. Sci. Technol. A 22, 1031–1035 (2004)
https://doi.org/10.1116/1.1648672
Published: May 2004
View articletitled, Temperature distribution and heating in multiple emitter SiGe HBTs
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Journal Articles

Strong near-infrared photoluminescence and absorption from Si/Si 1−x Ge x type-II multiple quantum wells on bulk crystal SiGe substrates

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S. R. Sheng, N. L. Rowell, S. P. McAlister
Journal: Applied Physics Letters
Appl. Phys. Lett. 83, 2790–2792 (2003)
https://doi.org/10.1063/1.1615310
Published: October 2003
View articletitled, Strong near-infrared photoluminescence and absorption from Si/Si 1−x Ge x type-II multiple quantum wells on bulk crystal SiGe substrates
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Journal Articles

Photoluminescence in tensile-strained Si type-II quantum wells on bulk single-crystal SiGe substrates

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S. R. Sheng, N. L. Rowell, S. P. McAlister
Journal: Applied Physics Letters
Appl. Phys. Lett. 83, 857–859 (2003)
https://doi.org/10.1063/1.1597413
Published: August 2003
View articletitled, Photoluminescence in tensile-strained Si type-II quantum wells on bulk single-crystal SiGe substrates
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Journal Articles

Current gain degradation in SiGe HBTs by hot carriers

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C. R. Gill, S. P. McAlister, C. Storey, W. R. McKinnon, S. Kovacic
Journal: Journal of Vacuum Science & Technology B
J. Vac. Sci. Technol. B 20, 1961–1966 (2002)
https://doi.org/10.1116/1.1503789
Published: October 2002
View articletitled, Current gain degradation in SiGe HBTs by hot carriers
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Journal Articles

Growth and characterization of ultrahigh vacuum/chemical vapor deposition SiGe epitaxial layers on bulk single-crystal SiGe and Si substrates

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S. R. Sheng, M. Dion, S. P. McAlister, N. L. Rowell
Journal: Journal of Vacuum Science & Technology A
J. Vac. Sci. Technol. A 20, 1120–1124 (2002)
https://doi.org/10.1116/1.1464840
Published: May 2002
View articletitled, Growth and characterization of ultrahigh vacuum/chemical vapor deposition SiGe epitaxial layers on bulk single-crystal SiGe and Si substrates
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Journal Articles

Oxygen plasma induced degradation in InGaAs/InP heterostructures

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R. Driad, W. R. McKinnon, S. P. McAlister
Journal: Journal of Vacuum Science & Technology B
J. Vac. Sci. Technol. B 18, 2799–2802 (2000)
https://doi.org/10.1116/1.1320801
Published: November 2000
View articletitled, Oxygen plasma induced degradation in InGaAs/InP heterostructures
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Journal Articles

The temperature dependence of the dc characteristics of silicon germanium bipolar transistors

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S. P. McAlister, S. Kovacic, A. Renaud, Z. F. Zhou
Journal: Journal of Vacuum Science & Technology A
J. Vac. Sci. Technol. A 18, 770–774 (2000)
https://doi.org/10.1116/1.582177
Published: March 2000
View articletitled, The temperature dependence of the dc characteristics of silicon germanium bipolar transistors
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Journal Articles

Surface passivation of InGaAs for heterojunction bipolar transistor applications

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R. Driad, W. R. McKinnon, Z. H. Lu, S. P. McAlister, P. J. Poole, S. Charbonneau
Journal: Journal of Vacuum Science & Technology A
J. Vac. Sci. Technol. A 18, 697–700 (2000)
https://doi.org/10.1116/1.582160
Published: March 2000
View articletitled, Surface passivation of InGaAs for heterojunction bipolar transistor applications
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Journal Articles

Passivation of InGaAs surfaces and InGaAs/InP heterojunction bipolar transistors by sulfur treatment

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R. Driad, Z. H. Lu, S. Charbonneau, W. R. McKinnon, S. Laframboise, P. J. Poole, S. P. McAlister
Journal: Applied Physics Letters
Appl. Phys. Lett. 73, 665–667 (1998)
https://doi.org/10.1063/1.121941
Published: August 1998
View articletitled, Passivation of InGaAs surfaces and InGaAs/InP heterojunction bipolar transistors by sulfur treatment
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Journal Articles

Heterostructure Si 1−x Ge x channel pMOSFETs with high Ge concentration

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C. Pawlowicz, N. G. Tarr, L. P. Berndt, R. L. Williams, D. Landheer, D.-X. Xu, R. Abid, S. P. McAlister
Journal: Journal of Vacuum Science & Technology A
J. Vac. Sci. Technol. A 16, 864–867 (1998)
https://doi.org/10.1116/1.581024
Published: March 1998
View articletitled, Heterostructure Si 1−x Ge x channel pMOSFETs with high Ge concentration
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Journal Articles

Temperature independent current blocking due to hot electrons in InAlAs/InGaAs double heterojunction bipolar transistors with composite collectors

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W. R. McKinnon, R. Driad, S. P. McAlister, A. Renaud, Z. R. Wasilewski
Journal: Journal of Vacuum Science & Technology A
J. Vac. Sci. Technol. A 16, 846–849 (1998)
https://doi.org/10.1116/1.581020
Published: March 1998
View articletitled, Temperature independent current blocking due to hot electrons in InAlAs/InGaAs double heterojunction bipolar transistors with composite collectors
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Journal Articles

Use of dipole doping to suppress switching in indium phosphide double heterojunction bipolar transistors

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S. P. McAlister, W. R. McKinnon, R. Driad, A. P. Renaud
Journal: Journal of Applied Physics
J. Appl. Phys. 82, 5231–5234 (1997)
https://doi.org/10.1063/1.366388
Published: November 1997
View articletitled, Use of dipole doping to suppress switching in indium phosphide double heterojunction bipolar transistors
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Journal Articles

Current blocking in InP/InGaAs double heterostructure bipolar transistors

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W. R. McKinnon, S. P. McAlister, Z. Abid, E. E. Guzzo
Journal: Journal of Applied Physics
J. Appl. Phys. 79, 2771–2778 (1996)
https://doi.org/10.1063/1.361108
Published: March 1996
View articletitled, Current blocking in InP/InGaAs double heterostructure bipolar transistors
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Journal Articles

Hysteresis in the switching of hot electrons in InP/InGaAs double‐heterojunction bipolar transistors

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S. P. McAlister, W. R. McKinnon, Z. Abid, E. E. Guzzo
Journal: Journal of Applied Physics
J. Appl. Phys. 76, 2559–2561 (1994)
https://doi.org/10.1063/1.358456
Published: August 1994
View articletitled, Hysteresis in the switching of hot electrons in InP/InGaAs double‐heterojunction bipolar transistors
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Journal Articles

Two‐dimensional modulated ferrimagnetic systems (abstract)

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P. F. Miceli, J. M. Tarascon, G. W. Hull, K. Remschnig, W. R. McKinnon, E. Telpis, Y. LePage, S. P. McAlister, G. Pleizier, J. J. Rhyne, D. A. Neumann
Journal: Journal of Applied Physics
J. Appl. Phys. 69, 4903 (1991)
https://doi.org/10.1063/1.348950
Published: April 1991
View articletitled, Two‐dimensional modulated ferrimagnetic systems (abstract)
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