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Journal Articles

Exploratory study and application of the angular wavelet analysis for assessing the spatial distribution of breakdown spots in Pt/HfO2/Pt structures

J. Muñoz-Gorriz, S. Monaghan, K. Cherkaoui, J. Suñé, P. K. Hurley, E. Miranda
Journal: Journal of Applied Physics
J. Appl. Phys. 122, 215304 (2017)
https://doi.org/10.1063/1.5000004
Published: December 2017
View article titled, Exploratory study and application of the angular wavelet analysis for assessing the spatial distribution of breakdown spots in Pt/HfO<sub>2</sub>/Pt structures
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Journal Articles

Inversion in the In0.53Ga0.47As metal-oxide-semiconductor system: Impact of the In0.53Ga0.47As doping concentration

É. O'Connor, K. Cherkaoui, S. Monaghan, B. Sheehan, I. M. Povey, P. K. Hurley
Journal: Applied Physics Letters
Appl. Phys. Lett. 110, 032902 (2017)
https://doi.org/10.1063/1.4973971
Published: January 2017
View article titled, Inversion in the In<sub>0.53</sub>Ga<sub>0.47</sub>As metal-oxide-semiconductor system: Impact of the In<sub>0.53</sub>Ga<sub>0.47</sub>As doping concentration
Open the PDF for Inversion in the In<sub>0.53</sub>Ga<sub>0.47</sub>As metal-oxide-semiconductor system: Impact of the In<sub>0.53</sub>Ga<sub>0.47</sub>As doping concentration in another window
Journal Articles

Diffusion of In0.53Ga0.47As elements through hafnium oxide during post deposition annealing

W. Cabrera, B. Brennan, H. Dong, T. P. O'Regan, I. M. Povey, S. Monaghan, É. O'Connor, P. K. Hurley, R. M. Wallace, Y. J. Chabal
Journal: Applied Physics Letters
Appl. Phys. Lett. 104, 011601 (2014)
https://doi.org/10.1063/1.4860960
Published: January 2014
View article titled, Diffusion of In<sub>0.53</sub>Ga<sub>0.47</sub>As elements through hafnium oxide during post deposition annealing
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Includes: Supplementary data
Journal Articles

Analysis of the breakdown spot spatial distribution in Pt/HfO2/Pt capacitors using nearest neighbor statistics

X. Saura, J. Suñé, S. Monaghan, P. K. Hurley, E. Miranda
Journal: Journal of Applied Physics
J. Appl. Phys. 114, 154112 (2013)
https://doi.org/10.1063/1.4825321
Published: October 2013
View article titled, Analysis of the breakdown spot spatial distribution in Pt/HfO<sub>2</sub>/Pt capacitors using nearest neighbor statistics
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Journal Articles

Observation of peripheral charge induced low frequency capacitance-voltage behaviour in metal-oxide-semiconductor capacitors on Si and GaAs substrates

É. O’Connor, K. Cherkaoui, S. Monaghan, D. O’Connell, I. Povey, P. Casey, S. B. Newcomb, Y. Y. Gomeniuk, G. Provenzano, F. Crupi, G. Hughes, P. K. Hurley
Journal: Journal of Applied Physics
J. Appl. Phys. 111, 124104 (2012)
https://doi.org/10.1063/1.4729331
Published: June 2012
View article titled, Observation of peripheral charge induced low frequency capacitance-voltage behaviour in metal-oxide-semiconductor capacitors on Si and GaAs substrates
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Journal Articles

Analysis of the minority carrier response of n-type and p-type Au/Ni/Al2O3/In0.53Ga0.47As/InP capacitors following an optimized (NH4)2S treatment

É. O’Connor, S. Monaghan, K. Cherkaoui, I. M. Povey, P. K. Hurley
Journal: Applied Physics Letters
Appl. Phys. Lett. 99, 212901 (2011)
https://doi.org/10.1063/1.3663535
Published: November 2011
View article titled, Analysis of the minority carrier response of <em>n</em>-type and <em>p</em>-type Au/Ni/Al<sub>2</sub>O<sub>3</sub>/In<sub>0.53</sub>Ga<sub>0.47</sub>As/InP capacitors following an optimized (NH<sub>4</sub>)<sub>2</sub>S treatment
Open the PDF for Analysis of the minority carrier response of <em>n</em>-type and <em>p</em>-type Au/Ni/Al<sub>2</sub>O<sub>3</sub>/In<sub>0.53</sub>Ga<sub>0.47</sub>As/InP capacitors following an optimized (NH<sub>4</sub>)<sub>2</sub>S treatment in another window
Journal Articles

Electrical analysis of three-stage passivated In 0.53 Ga 0.47 As capacitors with varying HfO 2 thicknesses and incorporating an Al 2 O 3 interface control layer

S. Monaghan, A. O’Mahony, K. Cherkaoui, É. O’Connor, I. M. Povey, M. G. Nolan, D. O’Connell, M. E. Pemble, P. K. Hurley, G. Provenzano, F. Crupi, S. B. Newcomb
Journal: Journal of Vacuum Science & Technology B
J. Vac. Sci. Technol. B 29, 01A807 (2011)
https://doi.org/10.1116/1.3532826
Published: January 2011
View article titled, Electrical analysis of three-stage passivated In 0.53 Ga 0.47 As capacitors with varying HfO 2 thicknesses and incorporating an Al 2 O 3 interface control layer
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Journal Articles

A systematic study of ( NH 4 ) 2 S passivation (22%, 10%, 5%, or 1%) on the interface properties of the Al 2 O 3 / In 0.53 Ga 0.47 As / InP system for n -type and p -type In 0.53 Ga 0.47 As epitaxial layers

É. O’Connor, B. Brennan, V. Djara, K. Cherkaoui, S. Monaghan, S. B. Newcomb, R. Contreras, M. Milojevic, G. Hughes, M. E. Pemble, R. M. Wallace, P. K. Hurley
Journal: Journal of Applied Physics
J. Appl. Phys. 109, 024101 (2011)
https://doi.org/10.1063/1.3533959
Published: January 2011
View article titled, A systematic study of ( NH 4 ) 2 S passivation (22%, 10%, 5%, or 1%) on the interface properties of the Al 2 O 3 / In 0.53 Ga 0.47 As / InP system for n -type and p -type In 0.53 Ga 0.47 As epitaxial layers
Open the PDF for A systematic study of ( NH 4 ) 2 S passivation (22%, 10%, 5%, or 1%) on the interface properties of the Al 2 O 3 / In 0.53 Ga 0.47 As / InP system for n -type and p -type In 0.53 Ga 0.47 As epitaxial layers in another window
Journal Articles

Structural and electrical analysis of the atomic layer deposition of HfO 2 / n -In 0.53 Ga 0.47 As capacitors with and without an Al 2 O 3 interface control layer

A. O’Mahony, S. Monaghan, G. Provenzano, I. M. Povey, M. G. Nolan, É. O’Connor, K. Cherkaoui, S. B. Newcomb, F. Crupi, P. K. Hurley, M. E. Pemble
Journal: Applied Physics Letters
Appl. Phys. Lett. 97, 052904 (2010)
https://doi.org/10.1063/1.3473773
Published: August 2010
View article titled, Structural and electrical analysis of the atomic layer deposition of HfO 2 / n -In 0.53 Ga 0.47 As capacitors with and without an Al 2 O 3 interface control layer
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Journal Articles

Structural analysis, elemental profiling, and electrical characterization of HfO 2 thin films deposited on In 0.53 Ga 0.47 As surfaces by atomic layer deposition

R. D. Long, É. O’Connor, S. B. Newcomb, S. Monaghan, K. Cherkaoui, P. Casey, G. Hughes, K. K. Thomas, F. Chalvet, I. M. Povey, M. E. Pemble, P. K. Hurley
Journal: Journal of Applied Physics
J. Appl. Phys. 106, 084508 (2009)
https://doi.org/10.1063/1.3243234
Published: October 2009
View article titled, Structural analysis, elemental profiling, and electrical characterization of HfO 2 thin films deposited on In 0.53 Ga 0.47 As surfaces by atomic layer deposition
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Journal Articles

Electrical characterization of the soft breakdown failure mode in MgO layers

E. Miranda, E. O’Connor, K. Cherkaoui, S. Monaghan, R. Long, D. O’Connell, P. K. Hurley, G. Hughes, P. Casey
Journal: Applied Physics Letters
Appl. Phys. Lett. 95, 012901 (2009)
https://doi.org/10.1063/1.3167827
Published: July 2009
View article titled, Electrical characterization of the soft breakdown failure mode in MgO layers
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Journal Articles

Temperature and frequency dependent electrical characterization of HfO 2 / In x Ga 1 − x As interfaces using capacitance-voltage and conductance methods

É. O’Connor, S. Monaghan, R. D. Long, A. O’Mahony, I. M. Povey, K. Cherkaoui, M. E. Pemble, G. Brammertz, M. Heyns, S. B. Newcomb, V. V. Afanas’ev, P. K. Hurley
Journal: Applied Physics Letters
Appl. Phys. Lett. 94, 102902 (2009)
https://doi.org/10.1063/1.3089688
Published: March 2009
View article titled, Temperature and frequency dependent electrical characterization of HfO 2 / In x Ga 1 − x As interfaces using capacitance-voltage and conductance methods
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Journal Articles

Leakage current effects on C - V plots of high- k metal-oxide-semiconductor capacitors

Y. Lu, S. Hall, L. Z. Tan, I. Z. Mitrovic, W. M. Davey, B. Raeissi, O. Engström, K. Cherkaoui, S. Monaghan, P. K. Hurley, H. D. B. Gottlob, M. C. Lemme
Journal: Journal of Vacuum Science & Technology B
J. Vac. Sci. Technol. B 27, 352–355 (2009)
https://doi.org/10.1116/1.3025910
Published: February 2009
View article titled, Leakage current effects on C - V plots of high- k metal-oxide-semiconductor capacitors
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Journal Articles

Electrical, structural, and chemical properties of HfO 2 films formed by electron beam evaporation

K. Cherkaoui, S. Monaghan, M. A. Negara, M. Modreanu, P. K. Hurley, D. O’Connell, S. McDonnell, G. Hughes, S. Wright, R. C. Barklie, P. Bailey, T. C. Q. Noakes
Journal: Journal of Applied Physics
J. Appl. Phys. 104, 064113 (2008)
https://doi.org/10.1063/1.2978209
Published: September 2008
View article titled, Electrical, structural, and chemical properties of HfO 2 films formed by electron beam evaporation
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Journal Articles

Stress in silicon interlayers at the Si O x ∕ Ge interface

S. O’Callaghan, S. Monaghan, S. D. Elliott, J. C. Greer
Journal: Applied Physics Letters
Appl. Phys. Lett. 90, 143511 (2007)
https://doi.org/10.1063/1.2713122
Published: April 2007
View article titled, Stress in silicon interlayers at the Si O x ∕ Ge interface
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Journal Articles

Cryptanalysis of optical encryption: a heuristic approach

Unnikrishnan Gopinathan, David S. Monaghan, Thomas J. Naughton, John T. Sheridan
Journal: AIP Conference Proceedings
AIP Conf. Proc. 860, 169–177 (2006)
https://doi.org/10.1063/1.2361218
Published: October 2006
View article titled, Cryptanalysis of optical encryption: a heuristic approach
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Journal Articles

Thermal decomposition mechanisms of hafnium and zirconium silicates at the atomic scale

S. Monaghan, J. C. Greer, S. D. Elliott
Journal: Journal of Applied Physics
J. Appl. Phys. 97, 114911 (2005)
https://doi.org/10.1063/1.1926399
Published: June 2005
View article titled, Thermal decomposition mechanisms of hafnium and zirconium silicates at the atomic scale
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