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Journal Articles

Experimental examination of tunneling paths in SiGe/Si gate-normal tunneling field-effect transistors

S. Glass, N. von den Driesch, S. Strangio, C. Schulte-Braucks, T. Rieger, K. Narimani, D. Buca, S. Mantl, Q. T. Zhao
Journal: Applied Physics Letters
Appl. Phys. Lett. 111, 263504 (2017)
https://doi.org/10.1063/1.4996109
Published: December 2017
View article titled, Experimental examination of tunneling paths in SiGe/Si gate-normal tunneling field-effect transistors
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Journal Articles

Ferroelectricity in Lu doped HfO2 layers

T. C. U. Tromm, J. Zhang, J. Schubert, M. Luysberg, W. Zander, Q. Han, P. Meuffels, D. Meertens, S. Glass, P. Bernardy, S. Mantl
Journal: Applied Physics Letters
Appl. Phys. Lett. 111, 142904 (2017)
https://doi.org/10.1063/1.4998336
Published: October 2017
View article titled, Ferroelectricity in Lu doped HfO<sub>2</sub> layers
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Journal Articles

Negative differential resistance in direct bandgap GeSn p-i-n structures

C. Schulte-Braucks, D. Stange, N. von den Driesch, S. Blaeser, Z. Ikonic, J. M. Hartmann, S. Mantl, D. Buca
Journal: Applied Physics Letters
Appl. Phys. Lett. 107, 042101 (2015)
https://doi.org/10.1063/1.4927622
Published: July 2015
View article titled, Negative differential resistance in direct bandgap GeSn p-i-n structures
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Journal Articles

Tensely strained GeSn alloys as optical gain media

S. Wirths, Z. Ikonic, A. T. Tiedemann, B. Holländer, T. Stoica, G. Mussler, U. Breuer, J. M. Hartmann, A. Benedetti, S. Chiussi, D. Grützmacher, S. Mantl, D. Buca
Journal: Applied Physics Letters
Appl. Phys. Lett. 103, 192110 (2013)
https://doi.org/10.1063/1.4829360
Published: November 2013
View article titled, Tensely strained GeSn alloys as optical gain media
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Journal Articles

Study of dopant activation in biaxially compressively strained SiGe layers using excimer laser annealing

G. V. Luong, S. Wirths, S. Stefanov, B. Holländer, J. Schubert, J. C. Conde, T. Stoica, U. Breuer, S. Chiussi, M. Goryll, D. Buca, S. Mantl
Journal: Journal of Applied Physics
J. Appl. Phys. 113, 204902 (2013)
https://doi.org/10.1063/1.4807001
Published: May 2013
View article titled, Study of dopant activation in biaxially compressively strained SiGe layers using excimer laser annealing
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Journal Articles

Band engineering and growth of tensile strained Ge/(Si)GeSn heterostructures for tunnel field effect transistors

S. Wirths, A. T. Tiedemann, Z. Ikonic, P. Harrison, B. Holländer, T. Stoica, G. Mussler, M. Myronov, J. M. Hartmann, D. Grützmacher, D. Buca, S. Mantl
Journal: Applied Physics Letters
Appl. Phys. Lett. 102, 192103 (2013)
https://doi.org/10.1063/1.4805034
Published: May 2013
View article titled, Band engineering and growth of tensile strained Ge/(Si)GeSn heterostructures for tunnel field effect transistors
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Journal Articles

Photoemission spectroscopy study of the lanthanum lutetium oxide/silicon interface

A. Nichau, M. Schnee, J. Schubert, A. Besmehn, J. Rubio-Zuazo, U. Breuer, P. Bernardy, B. Holländer, A. Mücklich, G. R. Castro, J. von Borany, D. Buca, S. Mantl
Journal: The Journal of Chemical Physics
J. Chem. Phys. 138, 154709 (2013)
https://doi.org/10.1063/1.4801324
Published: April 2013
View article titled, Photoemission spectroscopy study of the lanthanum lutetium oxide/silicon interface
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Journal Articles

Modulation phenomena in Si nanowire field-effect transistors characterized using noise spectroscopy and gamma radiation technique

S. Pud, J. Li, M. Petrychuk, S. Feste, S. Vitusevich, B. Danilchenko, A. Offenhäusser, S. Mantl
Journal: Journal of Applied Physics
J. Appl. Phys. 113, 124503 (2013)
https://doi.org/10.1063/1.4795603
Published: March 2013
View article titled, Modulation phenomena in Si nanowire field-effect transistors characterized using noise spectroscopy and gamma radiation technique
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Journal Articles

Effective attenuation length for lanthanum lutetium oxide between 7 and 13 keV

A. Nichau, J. Rubio-Zuazo, M. Schnee, G. R. Castro, J. Schubert, S. Mantl
Journal: Applied Physics Letters
Appl. Phys. Lett. 102, 031607 (2013)
https://doi.org/10.1063/1.4789524
Published: January 2013
View article titled, Effective attenuation length for lanthanum lutetium oxide between 7 and 13 keV
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Journal Articles

Unipolar behavior of asymmetrically doped strained Si0.5Ge0.5 tunneling field-effect transistors

M. Schmidt, R. A. Minamisawa, S. Richter, A. Schäfer, D. Buca, J. M. Hartmann, Q.-T. Zhao, S. Mantl
Journal: Applied Physics Letters
Appl. Phys. Lett. 101, 123501 (2012)
https://doi.org/10.1063/1.4751356
Published: September 2012
View article titled, Unipolar behavior of asymmetrically doped strained Si<sub>0.5</sub>Ge<sub>0.5</sub> tunneling field-effect transistors
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Journal Articles

Silicon germanium tin alloys formed by pulsed laser induced epitaxy

S. Stefanov, J. C. Conde, A. Benedetti, C. Serra, J. Werner, M. Oehme, J. Schulze, D. Buca, B. Holländer, S. Mantl, S. Chiussi
Journal: Applied Physics Letters
Appl. Phys. Lett. 100, 204102 (2012)
https://doi.org/10.1063/1.4714768
Published: May 2012
View article titled, Silicon germanium tin alloys formed by pulsed laser induced epitaxy
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Journal Articles

Laser synthesis of germanium tin alloys on virtual germanium

S. Stefanov, J. C. Conde, A. Benedetti, C. Serra, J. Werner, M. Oehme, J. Schulze, D. Buca, B. Holländer, S. Mantl, S. Chiussi
Journal: Applied Physics Letters
Appl. Phys. Lett. 100, 104101 (2012)
https://doi.org/10.1063/1.3692175
Published: March 2012
View article titled, Laser synthesis of germanium tin alloys on virtual germanium
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Journal Articles

Anisotropy of strain relaxation in (100) and (110) Si/SiGe heterostructures

H. Trinkaus, D. Buca, R. A. Minamisawa, B. Holländer, M. Luysberg, S. Mantl
Journal: Journal of Applied Physics
J. Appl. Phys. 111, 014904 (2012)
https://doi.org/10.1063/1.3672447
Published: January 2012
View article titled, Anisotropy of strain relaxation in (100) and (110) Si/SiGe heterostructures
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Journal Articles

Epitaxial growth of Ni ( Al ) Si 0.7 Ge 0.3 on Si 0.7 Ge 0.3 / Si ( 100 ) by Al interlayer mediated epitaxy

B. Zhang, W. Yu, Q. T. Zhao, G. Mussler, L. Jin, D. Buca, B. Holländer, J. M. Hartmann, M. Zhang, X. Wang, S. Mantl
Journal: Applied Physics Letters
Appl. Phys. Lett. 98, 252101 (2011)
https://doi.org/10.1063/1.3601464
Published: June 2011
View article titled, Epitaxial growth of Ni ( Al ) Si 0.7 Ge 0.3 on Si 0.7 Ge 0.3 / Si ( 100 ) by Al interlayer mediated epitaxy
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Journal Articles

Rare-earth oxide/TiN gate stacks on high mobility strained silicon on insulator for fully depleted metal-oxide-semiconductor field-effect transistors

E. Durğun Özben, J. M. J. Lopes, A. Nichau, R. Lupták, S. Lenk, A. Besmehn, K. K. Bourdelle, Q. T. Zhao, J. Schubert, S. Mantl
Journal: Journal of Vacuum Science & Technology B
J. Vac. Sci. Technol. B 29, 01A903 (2011)
https://doi.org/10.1116/1.3533760
Published: January 2011
View article titled, Rare-earth oxide/TiN gate stacks on high mobility strained silicon on insulator for fully depleted metal-oxide-semiconductor field-effect transistors
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Journal Articles

Atomic layer deposition of HfO 2 and Al 2 O 3 layers on 300 mm Si wafers for gate stack technology

R. Lupták, J. M. J. Lopes, St. Lenk, B. Holländer, E. Durğun Özben, A. T. Tiedemann, M. Schnee, J. Schubert, S. Habicht, S. Feste, S. Mantl, U. Breuer, A. Besmehn, P. K. Baumann, M. Heuken
Journal: Journal of Vacuum Science & Technology B
J. Vac. Sci. Technol. B 29, 01A301 (2011)
https://doi.org/10.1116/1.3521374
Published: January 2011
View article titled, Atomic layer deposition of HfO 2 and Al 2 O 3 layers on 300 mm Si wafers for gate stack technology
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Journal Articles

Elastic strain and dopant activation in ion implanted strained Si nanowires

R. A. Minamisawa, S. Habicht, D. Buca, R. Carius, S. Trellenkamp, K. K. Bourdelle, S. Mantl
Journal: Journal of Applied Physics
J. Appl. Phys. 108, 124908 (2010)
https://doi.org/10.1063/1.3520665
Published: December 2010
View article titled, Elastic strain and dopant activation in ion implanted strained Si nanowires
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Journal Articles

Strain tensors in layer systems by precision ion channeling measurements

H. Trinkaus, D. Buca, B. Holländer, R. A. Minamisawa, S. Mantl, J. M. Hartmann
Journal: Journal of Applied Physics
J. Appl. Phys. 107, 124906 (2010)
https://doi.org/10.1063/1.3415530
Published: June 2010
View article titled, Strain tensors in layer systems by precision ion channeling measurements
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Journal Articles

Formation of steep, low Schottky-barrier contacts by dopant segregation during nickel silicidation

S. F. Feste, J. Knoch, D. Buca, Q. T. Zhao, U. Breuer, S. Mantl
Journal: Journal of Applied Physics
J. Appl. Phys. 107, 044510 (2010)
https://doi.org/10.1063/1.3284089
Published: February 2010
View article titled, Formation of steep, low Schottky-barrier contacts by dopant segregation during nickel silicidation
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Journal Articles

Melting of Zn nanoparticles embedded in SiO 2 at high temperatures: Effects on surface plasmon resonances

H. Amekura, M. Tanaka, Y. Katsuya, H. Yoshikawa, H. Shinotsuka, S. Tanuma, M. Ohnuma, Y. Matsushita, K. Kobayashi, Ch. Buchal, S. Mantl, N. Kishimoto
Journal: Applied Physics Letters
Appl. Phys. Lett. 96, 023110 (2010)
https://doi.org/10.1063/1.3290984
Published: January 2010
View article titled, Melting of Zn nanoparticles embedded in SiO 2 at high temperatures: Effects on surface plasmon resonances
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