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Journal Articles

The effect of Ta interface on the crystallization of amorphous phase change material thin films

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G. E. Ghezzi, P. Noé, M. Marra, C. Sabbione, F. Fillot, N. Bernier, J. Ferrand, S. Maîtrejean, F. Hippert
Journal: Applied Physics Letters
Appl. Phys. Lett. 104, 221605 (2014)
https://doi.org/10.1063/1.4881927
Published: June 2014
View articletitled, The effect of Ta interface on the crystallization of amorphous phase change material thin films
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Journal Articles

A study of nitrogen behavior in the formation of Ta/TaN and Ti/TaN alloyed metal electrodes on SiO2 and HfO2 dielectrics

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R. Gassilloud, C. Maunoury, C. Leroux, F. Piallat, B. Saidi, F. Martin, S. Maitrejean
Journal: Applied Physics Letters
Appl. Phys. Lett. 104, 143501 (2014)
https://doi.org/10.1063/1.4870338
Published: April 2014
View articletitled, A study of nitrogen behavior in the formation of Ta/TaN and Ti/TaN alloyed metal electrodes on SiO2 and HfO2 dielectrics
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Journal Articles

Crystallization of Ge2Sb2Te5 nanometric phase change material clusters made by gas-phase condensation

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G. E. Ghezzi, R. Morel, A. Brenac, N. Boudet, M. Audier, F. Fillot, S. Maitrejean, F. Hippert
Journal: Applied Physics Letters
Appl. Phys. Lett. 101, 233113 (2012)
https://doi.org/10.1063/1.4769435
Published: December 2012
View articletitled, Crystallization of Ge2Sb2Te5 nanometric phase change material clusters made by gas-phase condensation
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Includes: Supplementary data
Journal Articles

Crystallization study of “melt quenched” amorphous GeTe by transmission electron microscopy for phase change memory applications

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A. Bastard, J. C. Bastien, B. Hyot, S. Lhostis, F. Mompiou, C. Bonafos, G. Servanton, C. Borowiak, F. Lorut, N. Bicais-Lepinay, A. Toffoli, C. Sandhya, A. Fantini, L. Perniola, E. Gourvest, S. Maitrejean, A. Roule, V. Sousa, D. Bensahel, B. André
Journal: Applied Physics Letters
Appl. Phys. Lett. 99, 243103 (2011)
https://doi.org/10.1063/1.3668095
Published: December 2011
View articletitled, Crystallization study of “melt quenched” amorphous GeTe by transmission electron microscopy for phase change memory applications
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Journal Articles

Effect of carbon doping on the structure of amorphous GeTe phase change material

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G. E. Ghezzi, J. Y. Raty, S. Maitrejean, A. Roule, E. Elkaim, F. Hippert
Journal: Applied Physics Letters
Appl. Phys. Lett. 99, 151906 (2011)
https://doi.org/10.1063/1.3651321
Published: October 2011
View articletitled, Effect of carbon doping on the structure of amorphous GeTe phase change material
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Journal Articles

Evidence of Germanium precipitation in phase-change Ge 1 − x Te x thin films by Raman scattering

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E. Gourvest, S. Lhostis, J. Kreisel, M. Armand, S. Maitrejean, A. Roule, C. Vallée
Journal: Applied Physics Letters
Appl. Phys. Lett. 95, 031908 (2009)
https://doi.org/10.1063/1.3186077
Published: July 2009
View articletitled, Evidence of Germanium precipitation in phase-change Ge 1 − x Te x thin films by Raman scattering
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Journal Articles

Integration of single carbon nanofibers in standard via interconnects

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J. C. Coiffic, D. Mariolle, N. Chevalier, S. Olivier, D. Lafond, M. Fayolle, S. Maitrejean, H. Le Poche
Journal: Applied Physics Letters
Appl. Phys. Lett. 92, 223510 (2008)
https://doi.org/10.1063/1.2942377
Published: June 2008
View articletitled, Integration of single carbon nanofibers in standard via interconnects
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Journal Articles

Experimental study of the minimum metal gate thickness required to fix the effective work function in metal-oxide-semiconductor capacitors

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F. Fillot, S. Maîtrejean, I. Matko, B. Chenevier
Journal: Applied Physics Letters
Appl. Phys. Lett. 92, 023503 (2008)
https://doi.org/10.1063/1.2833697
Published: January 2008
View articletitled, Experimental study of the minimum metal gate thickness required to fix the effective work function in metal-oxide-semiconductor capacitors
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Journal Articles

Conduction regime in innovative carbon nanotube via interconnect architectures

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J. C. Coiffic, M. Fayolle, S. Maitrejean, L. E. F. Foa Torres, H. Le Poche
Journal: Applied Physics Letters
Appl. Phys. Lett. 91, 252107 (2007)
https://doi.org/10.1063/1.2826274
Published: December 2007
View articletitled, Conduction regime in innovative carbon nanotube via interconnect architectures
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Journal Articles

Undulation of sub- 100 nm porous dielectric structures: A mechanical analysis

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M. Darnon, T. Chevolleau, O. Joubert, S. Maitrejean, J. C. Barbe, J. Torres
Journal: Applied Physics Letters
Appl. Phys. Lett. 91, 194103 (2007)
https://doi.org/10.1063/1.2805774
Published: November 2007
View articletitled, Undulation of sub- 100 nm porous dielectric structures: A mechanical analysis
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