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Journal Articles

Set compliance current induced resistive memory characteristics of W/Hf/HfOx/TiN devices

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S. Maji, S. Samanta, P. Das, S. Maikap, V. R. Dhanak, I. Z. Mitrovic, R. Mahapatra
Journal: Journal of Vacuum Science & Technology B
J. Vac. Sci. Technol. B 37, 021204 (2019)
https://doi.org/10.1116/1.5079574
Published: February 2019
View articletitled, Set compliance current induced resistive memory characteristics of W/Hf/HfOx/TiN devices
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Journal Articles

Repeatable unipolar/bipolar resistive memory characteristics and switching mechanism using a Cu nanofilament in a GeOx film

Open Access
S. Z. Rahaman, S. Maikap, W. S. Chen, H. Y. Lee, F. T. Chen, M. J. Kao, M. J. Tsai
Journal: Applied Physics Letters
Appl. Phys. Lett. 101, 073106 (2012)
https://doi.org/10.1063/1.4745783
Published: August 2012
View articletitled, Repeatable unipolar/bipolar resistive memory characteristics and switching mechanism using a Cu nanofilament in a GeOx film
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Journal Articles

Impact of TaOx nanolayer at the GeSex/W interface on resistive switching memory performance and investigation of Cu nanofilament

Open Access
S. Z. Rahaman, S. Maikap, W. S. Chen, H. Y. Lee, F. T. Chen, T. C. Tien, M. J. Tsai
Journal: Journal of Applied Physics
J. Appl. Phys. 111, 063710 (2012)
https://doi.org/10.1063/1.3696972
Published: March 2012
View articletitled, Impact of TaOx nanolayer at the GeSex/W interface on resistive switching memory performance and investigation of Cu nanofilament
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Journal Articles

Impact of metal nano layer thickness on tunneling oxide and memory performance of core-shell iridium-oxide nanocrystals

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W. Banerjee, S. Maikap, T.-C. Tien, W.-C. Li, J.-R. Yang
Journal: Journal of Applied Physics
J. Appl. Phys. 110, 074309 (2011)
https://doi.org/10.1063/1.3642961
Published: October 2011
View articletitled, Impact of metal nano layer thickness on tunneling oxide and memory performance of core-shell iridium-oxide nanocrystals
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Journal Articles

Physical and electrical characteristics of atomic layer deposited TiN nanocrystal memory capacitors

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S. Maikap, P. J. Tzeng, H. Y. Lee, C. C. Wang, T. C. Tien, L. S. Lee, M.-J. Tsai
Journal: Applied Physics Letters
Appl. Phys. Lett. 91, 043114 (2007)
https://doi.org/10.1063/1.2766680
Published: July 2007
View articletitled, Physical and electrical characteristics of atomic layer deposited TiN nanocrystal memory capacitors
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Journal Articles

Band offsets and charge storage characteristics of atomic layer deposited high- k   Hf O 2 ∕ Ti O 2 multilayers

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S. Maikap, T.-Y. Wang, P.-J. Tzeng, C.-H. Lin, T. C. Tien, L. S. Lee, J.-R. Yang, M.-J. Tsai
Journal: Applied Physics Letters
Appl. Phys. Lett. 90, 262901 (2007)
https://doi.org/10.1063/1.2751579
Published: June 2007
View articletitled, Band offsets and charge storage characteristics of atomic layer deposited high- k   Hf O 2 ∕ Ti O 2 multilayers
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Journal Articles

Charge storage characteristics of atomic layer deposited Ru O x nanocrystals

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S. Maikap, T. Y. Wang, P. J. Tzeng, C. H. Lin, L. S. Lee, J. R. Yang, M. J. Tsai
Journal: Applied Physics Letters
Appl. Phys. Lett. 90, 253108 (2007)
https://doi.org/10.1063/1.2749857
Published: June 2007
View articletitled, Charge storage characteristics of atomic layer deposited Ru O x nanocrystals
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Journal Articles

Hole mobility enhancement of Si 0.2 Ge 0.8 quantum well channel on Si

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C.-Y. Peng, F. Yuan, C.-Y. Yu, P.-S. Kuo, M. H. Lee, S. Maikap, C.-H. Hsu, C. W. Liu
Journal: Applied Physics Letters
Appl. Phys. Lett. 90, 012114 (2007)
https://doi.org/10.1063/1.2400394
Published: January 2007
View articletitled, Hole mobility enhancement of Si 0.2 Ge 0.8 quantum well channel on Si
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Journal Articles

Characteristics of Zr O 2 gate dielectrics on O 2 - and N 2 O -plasma treated partially strain-compensated Si 0.69 Ge 0.3 C 0.01 layers

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R. Mahapatra, S. Maikap, Je-Hun Lee, S. K. Ray
Journal: Journal of Applied Physics
J. Appl. Phys. 100, 034105 (2006)
https://doi.org/10.1063/1.2227269
Published: August 2006
View articletitled, Characteristics of Zr O 2 gate dielectrics on O 2 - and N 2 O -plasma treated partially strain-compensated Si 0.69 Ge 0.3 C 0.01 layers
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Journal Articles

Abnormal hole mobility of biaxial strained Si

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M. H. Liao, S. T. Chang, M. H. Lee, S. Maikap, C. W. Liu
Journal: Journal of Applied Physics
J. Appl. Phys. 98, 066104 (2005)
https://doi.org/10.1063/1.2041839
Published: September 2005
View articletitled, Abnormal hole mobility of biaxial strained Si
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Journal Articles

Evidence of Si ∕ SiGe heterojunction roughness scattering

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C. W. Liu, M. H. Lee, Y. C. Lee, P. S. Chen, C.-Y. Yu, J.-Y. Wei, S. Maikap
Journal: Applied Physics Letters
Appl. Phys. Lett. 85, 4947–4949 (2004)
https://doi.org/10.1063/1.1828224
Published: November 2004
View articletitled, Evidence of Si ∕ SiGe heterojunction roughness scattering
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Journal Articles

Charge storage and photoluminescence characteristics of silicon oxide embedded Ge nanocrystal trilayer structures

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K. Das, M. NandaGoswami, R. Mahapatra, G. S. Kar, A. Dhar, H. N. Acharya, S. Maikap, Je-Hun Lee, S. K. Ray
Journal: Applied Physics Letters
Appl. Phys. Lett. 84, 1386–1388 (2004)
https://doi.org/10.1063/1.1646750
Published: February 2004
View articletitled, Charge storage and photoluminescence characteristics of silicon oxide embedded Ge nanocrystal trilayer structures
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Journal Articles

Physical and electrical properties of ultrathin HfO 2 / HfSi x O y stacked gate dielectrics on compressively strained- Si 0.74 Ge 0.26 / Si heterolayers

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S. Maikap, Je-Hun Lee, Doh-Y. Kim, R. Mahapatra, S. K. Ray, Jae-Hoon Song, Y. S. No, Won-Kook Choi
Journal: Journal of Vacuum Science & Technology B
J. Vac. Sci. Technol. B 22, 52–56 (2004)
https://doi.org/10.1116/1.1633771
Published: December 2003
View articletitled, Physical and electrical properties of ultrathin HfO 2 / HfSi x O y stacked gate dielectrics on compressively strained- Si 0.74 Ge 0.26 / Si heterolayers
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Journal Articles

Structural and electrical characteristics of the interfacial layer of ultrathin ZrO 2 films on partially strain compensated Si 0.69 Ge 0.3 C 0.01 layers

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R. Mahapatra, S. Maikap, Je-Hun Lee, G. S. Kar, A. Dhar, Doh-Y. Kim, D. Bhattacharya, S. K. Ray
Journal: Journal of Vacuum Science & Technology A
J. Vac. Sci. Technol. A 21, 1758–1764 (2003)
https://doi.org/10.1116/1.1603279
Published: August 2003
View articletitled, Structural and electrical characteristics of the interfacial layer of ultrathin ZrO 2 films on partially strain compensated Si 0.69 Ge 0.3 C 0.01 layers
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Journal Articles

Characteristics of ultrathin HfO 2 gate dielectrics on strained- Si 0.74 Ge 0.26 layers

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Je-Hun Lee, S. Maikap, Doh-Y. Kim, R. Mahapatra, S. K. Ray, Y. S. No, Won-Kook Choi
Journal: Applied Physics Letters
Appl. Phys. Lett. 83, 779–781 (2003)
https://doi.org/10.1063/1.1589165
Published: July 2003
View articletitled, Characteristics of ultrathin HfO 2 gate dielectrics on strained- Si 0.74 Ge 0.26 layers
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Journal Articles

Effects of interfacial nitrogen on the structural and electrical properties of ultrathin ZrO 2 gate dielectrics on partially strain-compensated SiGeC/Si heterolayers

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R. Mahapatra, S. Maikap, Je-Hun Lee, G. S. Kar, A. Dhar, Nong-M. Hwang, Doh-Y. Kim, B. K. Mathur, S. K. Ray
Journal: Applied Physics Letters
Appl. Phys. Lett. 82, 4331–4333 (2003)
https://doi.org/10.1063/1.1583143
Published: June 2003
View articletitled, Effects of interfacial nitrogen on the structural and electrical properties of ultrathin ZrO 2 gate dielectrics on partially strain-compensated SiGeC/Si heterolayers
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Journal Articles

Electrical and interfacial characteristics of ultrathin ZrO 2 gate dielectrics on strain compensated SiGeC/Si heterostructure

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R. Mahapatra, Je-Hun Lee, S. Maikap, G. S. Kar, A. Dhar, Nong-M. Hwang, Doh-Y. Kim, B. K. Mathur, S. K. Ray
Journal: Applied Physics Letters
Appl. Phys. Lett. 82, 2320–2322 (2003)
https://doi.org/10.1063/1.1566480
Published: April 2003
View articletitled, Electrical and interfacial characteristics of ultrathin ZrO 2 gate dielectrics on strain compensated SiGeC/Si heterostructure
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Journal Articles

Interface properties and reliability of ultrathin oxynitride films grown on strained Si 1−x Ge x substrates

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S. K. Samanta, S. Chatterjee, S. Maikap, L. K. Bera, H. D. Banerjee, C. K. Maiti
Journal: Journal of Applied Physics
J. Appl. Phys. 93, 2464–2471 (2003)
https://doi.org/10.1063/1.1540224
Published: March 2003
View articletitled, Interface properties and reliability of ultrathin oxynitride films grown on strained Si 1−x Ge x substrates
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Journal Articles

Effects of nitric-oxide-plasma treatment on the electrical properties of tetraethylorthosilicate-deposited silicon dioxides on strained- Si 1−x Ge x layers

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B. Senapati, S. K. Samanta, S. Maikap, L. K. Bera, C. K. Maiti
Journal: Applied Physics Letters
Appl. Phys. Lett. 77, 1840–1842 (2000)
https://doi.org/10.1063/1.1311311
Published: September 2000
View articletitled, Effects of nitric-oxide-plasma treatment on the electrical properties of tetraethylorthosilicate-deposited silicon dioxides on strained- Si 1−x Ge x layers
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