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Journal Articles

Understanding the origin of mobility enhancement in wedge-shaped c-GaN nanowall networks utilizing spectroscopic techniques

Amandeep Kaur, Kousik Bera, Santosh Kumar Yadav, S. M. Shivaprasad, Anushree Roy, Subhabrata Dhar

J. Appl. Phys. 132, 194305 (2022)

https://doi.org/10.1063/5.0122101

Published: November 2022

View article titled, Understanding the origin of mobility enhancement in wedge-shaped c-GaN nanowall networks utilizing spectroscopic techniques

Includes: Supplementary data

Journal Articles

Clustering of oxygen point defects in transition metal nitrides

Rajendra Kumar, Sanjay Nayak, Magnus Garbrecht, Vijay Bhatia, Ashalatha Indiradevi Kamalasanan Pillai, Mukul Gupta, S. M. Shivaprasad, Bivas Saha

J. Appl. Phys. 129, 055305 (2021)

https://doi.org/10.1063/5.0038459

Published: February 2021

View article titled, Clustering of oxygen point defects in transition metal nitrides

Includes: Supplementary data

Journal Articles

Schottky barrier height of epitaxial lattice-matched TiN/Al_0.72Sc_0.28N metal/semiconductor superlattice interfaces for thermionic energy conversion

Sanjay Nayak, Shashidhara Acharya, Madhusmita Baral, Magnus Garbrecht, Tapas Ganguli, S. M. Shivaprasad, Bivas Saha

Appl. Phys. Lett. 115, 251901 (2019)

https://doi.org/10.1063/1.5126630

Published: December 2019

View article titled, Schottky barrier height of epitaxial lattice-matched TiN/Al0.72Sc0.28N metal/semiconductor superlattice interfaces for thermionic energy conversion

Includes: Supplementary data

Journal Articles

Effect of invasive probes on measurement of magneto-transport in macroscopic samples: A gallium nitride case study

A. K. Jain, H. Chakraborti, B. P. Joshi, B. Pal, M. Monish, S. M. Shivaprasad, S. Dhar, K. Das Gupta

J. Appl. Phys. 126, 085706 (2019)

https://doi.org/10.1063/1.5110648

Published: August 2019

View article titled, Effect of invasive probes on measurement of magneto-transport in macroscopic samples: A gallium nitride case study

Journal Articles

Enhanced radial growth of Mg doped GaN nanorods: A combined experimental and first-principles study

Sanjay Nayak, Rajendra Kumar, Nidhi Pandey, K. K. Nagaraja, Mukul Gupta, S. M. Shivaprasad

J. Appl. Phys. 123, 135303 (2018)

https://doi.org/10.1063/1.5024278

Published: April 2018

View article titled, Enhanced radial growth of Mg doped GaN nanorods: A combined experimental and first-principles study

Journal Articles

Role of dislocations and carrier concentration in limiting the electron mobility of InN films grown by plasma assisted molecular beam epitaxy

Malleswararao Tangi, Arpan De, S. M. Shivaprasad

J. Appl. Phys. 123, 015701 (2018)

https://doi.org/10.1063/1.5008903

Published: January 2018

View article titled, Role of dislocations and carrier concentration in limiting the electron mobility of InN films grown by plasma assisted molecular beam epitaxy

Journal Articles

Edge enhanced growth induced shape transition in the formation of GaN nanowall network

Sanjay Nayak, Rajendra Kumar, S. M. Shivaprasad

J. Appl. Phys. 123, 014302 (2018)

https://doi.org/10.1063/1.5004496

Published: January 2018

View article titled, Edge enhanced growth induced shape transition in the formation of GaN nanowall network

Journal Articles

Electron mobility of self-assembled and dislocation free InN nanorods grown on GaN nano wall network template

Malleswararao Tangi, Arpan De, Jay Ghatak, S. M. Shivaprasad

J. Appl. Phys. 119, 205701 (2016)

https://doi.org/10.1063/1.4952380

Published: May 2016

View article titled, Electron mobility of self-assembled and dislocation free InN nanorods grown on GaN nano wall network template

Journal Articles

Early stages of plasma induced nitridation of Si (111) surface and study of interfacial band alignment

Satish Shetty, S. M. Shivaprasad

J. Appl. Phys. 119, 055306 (2016)

https://doi.org/10.1063/1.4941102

Published: February 2016

View article titled, Early stages of plasma induced nitridation of Si (111) surface and study of interfacial band alignment

Journal Articles

Pre-nitridation induced In incorporation in In_xGa₁₋_xN nanorods on Si(111) grown by molecular beam epitaxy

Arpan De, Malleswararao Tangi, S. M. Shivaprasad

J. Appl. Phys. 118, 025301 (2015)

https://doi.org/10.1063/1.4926413

Published: July 2015

View article titled, Pre-nitridation induced In incorporation in InxGa1−xN nanorods on Si(111) grown by molecular beam epitaxy

Journal Articles

Transport and optical properties of c-axis oriented wedge shaped GaN nanowall network grown by molecular beam epitaxy

H. P. Bhasker, Varun Thakur, Manoj Kesaria, S. M. Shivaprasad, S. Dhar

AIP Conf. Proc. 1583, 252–258 (2014)

https://doi.org/10.1063/1.4865647

Published: February 2014

View article titled, Transport and optical properties of c-axis oriented wedge shaped GaN nanowall network grown by molecular beam epitaxy

Journal Articles

Optical bandgap and near surface band bending in degenerate InN films grown by molecular beam epitaxy

Malleswararao Tangi, Jithesh Kuyyalil, S. M. Shivaprasad

J. Appl. Phys. 114, 153501 (2013)

https://doi.org/10.1063/1.4824823

Published: October 2013

View article titled, Optical bandgap and near surface band bending in degenerate InN films grown by molecular beam epitaxy

Journal Articles

Effect of interfacial lattice mismatch on bulk carrier concentration and band gap of InN

Jithesh Kuyyalil, Malleswararao Tangi, S. M. Shivaprasad

J. Appl. Phys. 112, 083521 (2012)

https://doi.org/10.1063/1.4759449

Published: October 2012

View article titled, Effect of interfacial lattice mismatch on bulk carrier concentration and band gap of InN

Journal Articles

Role of native defects in nitrogen flux dependent carrier concentration of InN films grown by molecular beam epitaxy

Malleswararao Tangi, Jithesh Kuyyalil, S. M. Shivaprasad

J. Appl. Phys. 112, 073510 (2012)

https://doi.org/10.1063/1.4757031

Published: October 2012

View article titled, Role of native defects in nitrogen flux dependent carrier concentration of InN films grown by molecular beam epitaxy

Journal Articles

High electron mobility through the edge states in random networks of c-axis oriented wedge-shaped GaN nanowalls grown by molecular beam epitaxy

H. P. Bhasker, S. Dhar, A. Sain, Manoj Kesaria, S. M. Shivaprasad

Appl. Phys. Lett. 101, 132109 (2012)

https://doi.org/10.1063/1.4755775

Published: September 2012

View article titled, High electron mobility through the edge states in random networks of c-axis oriented wedge-shaped GaN nanowalls grown by molecular beam epitaxy

Journal Articles

Superstructure of self-aligned hexagonal GaN nanorods formed on nitrided Si(111) surface

Praveen Kumar, Mohit Tuteja, Manoj Kesaria, U. V. Waghmare, S. M. Shivaprasad

Appl. Phys. Lett. 101, 131605 (2012)

https://doi.org/10.1063/1.4751986

Published: September 2012

View article titled, Superstructure of self-aligned hexagonal GaN nanorods formed on nitrided Si(111) surface

Includes: Supplementary data

Journal Articles

Giant enhancement in ferromagnetic properties of Pd nanoparticle induced by intentionally created defects

P. K. Kulriya, B. R. Mehta, D. C. Agarwal, Praveen Kumar, S. M. Shivaprasad, J. C. Pivin, D. K. Avasthi

J. Appl. Phys. 112, 014318 (2012)

https://doi.org/10.1063/1.4733950

Published: July 2012

View article titled, Giant enhancement in ferromagnetic properties of Pd nanoparticle induced by intentionally created defects

Journal Articles

Ion beam induced effects on the ferromagnetism in Pd nanoparticles

P. K. Kulriya, B. R. Mehta, D. C. Agarwal, Kanika Agarwal, Praveen Kumar, S. M. Shivaprasad, D. K. Avasthi

AIP Conf. Proc. 1447, 401–402 (2012)

https://doi.org/10.1063/1.4710049

Published: June 2012

View article titled, Ion beam induced effects on the ferromagnetism in Pd nanoparticles

Journal Articles

Nitrogen flux induced GaN nanostructure nucleation at misfit dislocations on Al₂O₃(0001)

Manoj Kesaria, S. M. Shivaprasad

Appl. Phys. Lett. 99, 143105 (2011)

https://doi.org/10.1063/1.3646391

Published: October 2011

View article titled, Nitrogen flux induced GaN nanostructure nucleation at misfit dislocations on Al2O3(0001)

Journal Articles

Dependence of crystal orientation and bandgap on substrate temperature of molecular-beam epitaxy grown InN on bare Al₂O₃ (0001)

Jithesh Kuyyalil, Malleswararao Tangi, S. M. Shivaprasad

J. Appl. Phys. 109, 093513 (2011)

https://doi.org/10.1063/1.3580254

Published: May 2011

View article titled, Dependence of crystal orientation and bandgap on substrate temperature of molecular-beam epitaxy grown InN on bare Al2O3 (0001)

NARROW

Topics

Understanding the origin of mobility enhancement in wedge-shaped c-GaN nanowall networks utilizing spectroscopic techniques

Clustering of oxygen point defects in transition metal nitrides

Schottky barrier height of epitaxial lattice-matched TiN/Al_0.72Sc_0.28N metal/semiconductor superlattice interfaces for thermionic energy conversion

Effect of invasive probes on measurement of magneto-transport in macroscopic samples: A gallium nitride case study

Enhanced radial growth of Mg doped GaN nanorods: A combined experimental and first-principles study

Role of dislocations and carrier concentration in limiting the electron mobility of InN films grown by plasma assisted molecular beam epitaxy

Edge enhanced growth induced shape transition in the formation of GaN nanowall network

Electron mobility of self-assembled and dislocation free InN nanorods grown on GaN nano wall network template

Early stages of plasma induced nitridation of Si (111) surface and study of interfacial band alignment

Pre-nitridation induced In incorporation in In_xGa₁₋_xN nanorods on Si(111) grown by molecular beam epitaxy

Transport and optical properties of c-axis oriented wedge shaped GaN nanowall network grown by molecular beam epitaxy

Optical bandgap and near surface band bending in degenerate InN films grown by molecular beam epitaxy

Effect of interfacial lattice mismatch on bulk carrier concentration and band gap of InN

Role of native defects in nitrogen flux dependent carrier concentration of InN films grown by molecular beam epitaxy

High electron mobility through the edge states in random networks of c-axis oriented wedge-shaped GaN nanowalls grown by molecular beam epitaxy

Superstructure of self-aligned hexagonal GaN nanorods formed on nitrided Si(111) surface

Giant enhancement in ferromagnetic properties of Pd nanoparticle induced by intentionally created defects

Ion beam induced effects on the ferromagnetism in Pd nanoparticles

Nitrogen flux induced GaN nanostructure nucleation at misfit dislocations on Al₂O₃(0001)

Dependence of crystal orientation and bandgap on substrate temperature of molecular-beam epitaxy grown InN on bare Al₂O₃ (0001)

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