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Journal Articles

Dislocations in chemical vapor deposition diamond layer detected by confocal Raman imaging

Editor’s Pick
K. Ichikawa, T. Shimaoka, Y. Kato, S. Koizumi, T. Teraji
Journal: Journal of Applied Physics
J. Appl. Phys. 128, 155302 (2020)
https://doi.org/10.1063/5.0021076
Published: October 2020
View article titled, Dislocations in chemical vapor deposition diamond layer detected by confocal Raman imaging
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Journal Articles

Ultrahigh conversion efficiency of betavoltaic cell using diamond pn junction

T. Shimaoka, H. Umezawa, K. Ichikawa, J. Pernot, S. Koizumi
Journal: Applied Physics Letters
Appl. Phys. Lett. 117, 103902 (2020)
https://doi.org/10.1063/5.0020135
Published: September 2020
View article titled, Ultrahigh conversion efficiency of betavoltaic cell using diamond pn junction
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Includes: Supplementary data
Journal Articles

Interfacial energy barrier height of Al2O3/H-terminated (111) diamond heterointerface investigated by X-ray photoelectron spectroscopy

A. Maréchal, Y. Kato, M. Liao, S. Koizumi
Journal: Applied Physics Letters
Appl. Phys. Lett. 111, 141605 (2017)
https://doi.org/10.1063/1.5001070
Published: October 2017
View article titled, Interfacial energy barrier height of Al<sub>2</sub>O<sub>3</sub>/H-terminated (111) diamond heterointerface investigated by X-ray photoelectron spectroscopy
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Journal Articles

Long coherence time of spin qubits in 12C enriched polycrystalline chemical vapor deposition diamond

K. D. Jahnke, B. Naydenov, T. Teraji, S. Koizumi, T. Umeda, J. Isoya, F. Jelezko
Journal: Applied Physics Letters
Appl. Phys. Lett. 101, 012405 (2012)
https://doi.org/10.1063/1.4731778
Published: July 2012
View article titled, Long coherence time of spin qubits in <sup>12</sup>C enriched polycrystalline chemical vapor deposition diamond
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Journal Articles

Electron mobility in phosphorous doped {111} homoepitaxial diamond

J. Pernot, S. Koizumi
Journal: Applied Physics Letters
Appl. Phys. Lett. 93, 052105 (2008)
https://doi.org/10.1063/1.2969066
Published: August 2008
View article titled, Electron mobility in phosphorous doped {111} homoepitaxial diamond
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Journal Articles

Ohmic contact for p -type diamond without postannealing

T. Teraji, S. Koizumi, Y. Koide
Journal: Journal of Applied Physics
J. Appl. Phys. 104, 016104 (2008)
https://doi.org/10.1063/1.2936371
Published: July 2008
View article titled, Ohmic contact for p -type diamond without postannealing
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Journal Articles

Hall electron mobility in diamond

J. Pernot, C. Tavares, E. Gheeraert, E. Bustarret, M. Katagiri, S. Koizumi
Journal: Applied Physics Letters
Appl. Phys. Lett. 89, 122111 (2006)
https://doi.org/10.1063/1.2355454
Published: September 2006
View article titled, Hall electron mobility in diamond
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Journal Articles

Admittance spectroscopy for phosphorus-doped n -type diamond epilayer

Yasuo Koide, S. Koizumi, H. Kanda, M. Suzuki, H. Yoshida, N. Sakuma, T. Ono, T. Sakai
Journal: Applied Physics Letters
Appl. Phys. Lett. 86, 232105 (2005)
https://doi.org/10.1063/1.1944896
Published: June 2005
View article titled, Admittance spectroscopy for phosphorus-doped n -type diamond epilayer
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Journal Articles

Ultraviolet light emission from self-organized p–n domains in cubic boron nitride bulk single crystals grown under high pressure

T. Taniguchi, K. Watanabe, S. Koizumi, I. Sakaguchi, T. Sekiguchi, S. Yamaoka
Journal: Applied Physics Letters
Appl. Phys. Lett. 81, 4145–4147 (2002)
https://doi.org/10.1063/1.1524295
Published: November 2002
View article titled, Ultraviolet light emission from self-organized p–n domains in cubic boron nitride bulk single crystals grown under high pressure
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Journal Articles

Ga Ohmic contact for n-type diamond by ion implantation

T. Teraji, S. Koizumi, H. Kanda
Journal: Applied Physics Letters
Appl. Phys. Lett. 76, 1303–1305 (2000)
https://doi.org/10.1063/1.126016
Published: March 2000
View article titled, Ga Ohmic contact for <em>n</em>-type diamond by ion implantation
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Journal Articles

Structure of fluorine-doped silicon oxide films deposited by plasma-enhanced chemical vapor deposition

M. Yoshimaru, S. Koizumi, K. Shimokawa
Journal: Journal of Vacuum Science & Technology A
J. Vac. Sci. Technol. A 15, 2908–2914 (1997)
https://doi.org/10.1116/1.580884
Published: November 1997
View article titled, Structure of fluorine-doped silicon oxide films deposited by plasma-enhanced chemical vapor deposition
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Journal Articles

Interaction between water and fluorine-doped silicon oxide films deposited by plasma-enhanced chemical vapor deposition

M. Yoshimaru, S. Koizumi, K. Shimokawa
Journal: Journal of Vacuum Science & Technology A
J. Vac. Sci. Technol. A 15, 2915–2922 (1997)
https://doi.org/10.1116/1.580885
Published: November 1997
View article titled, Interaction between water and fluorine-doped silicon oxide films deposited by plasma-enhanced chemical vapor deposition
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Journal Articles

Electron emission from the pyramidal-shaped diamond after hydrogen and oxygen surface treatments

T. Yamada, H. Ishihara, K. Okano, S. Koizumi, J. Itoh
Journal: Journal of Vacuum Science & Technology B
J. Vac. Sci. Technol. B 15, 1678–1681 (1997)
https://doi.org/10.1116/1.589353
Published: September 1997
View article titled, Electron emission from the pyramidal-shaped diamond after hydrogen and oxygen surface treatments
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Journal Articles

Growth and characterization of phosphorous doped {111} homoepitaxial diamond thin films

S. Koizumi, M. Kamo, Y. Sato, H. Ozaki, T. Inuzuka
Journal: Applied Physics Letters
Appl. Phys. Lett. 71, 1065–1067 (1997)
https://doi.org/10.1063/1.119729
Published: August 1997
View article titled, Growth and characterization of phosphorous doped {111} homoepitaxial diamond thin films
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Journal Articles

Electron emission from nitrogen-doped pyramidal-shape diamond and its battery operation

K. Okano, T. Yamada, H. Ishihara, S. Koizumi, J. Itoh
Journal: Applied Physics Letters
Appl. Phys. Lett. 70, 2201–2203 (1997)
https://doi.org/10.1063/1.119041
Published: April 1997
View article titled, Electron emission from nitrogen-doped pyramidal-shape diamond and its battery operation
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Journal Articles

Study of crystallographic orientations in the diamond film on the (100) surface of cubic boron nitride using a Raman microprobe

M. Yoshikawa, H. Ishida, A. Ishitani, S. Koizumi, T. Inuzuka
Journal: Applied Physics Letters
Appl. Phys. Lett. 58, 1387–1388 (1991)
https://doi.org/10.1063/1.104316
Published: April 1991
View article titled, Study of crystallographic orientations in the diamond film on the (100) surface of cubic boron nitride using a Raman microprobe
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Journal Articles

Epitaxial growth of diamond thin films on cubic boron nitride {111} surfaces by dc plasma chemical vapor deposition

S. Koizumi, T. Murakami, T. Inuzuka, K. Suzuki
Journal: Applied Physics Letters
Appl. Phys. Lett. 57, 563–565 (1990)
https://doi.org/10.1063/1.103647
Published: August 1990
View article titled, Epitaxial growth of diamond thin films on cubic boron nitride {111} surfaces by dc plasma chemical vapor deposition
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Journal Articles

Study of crystallographic orientations in the diamond film on cubic boron nitride using Raman microprobe

M. Yoshikawa, H. Ishida, A. Ishitani, T. Murakami, S. Koizumi, T. Inuzuka
Journal: Applied Physics Letters
Appl. Phys. Lett. 57, 428–430 (1990)
https://doi.org/10.1063/1.103656
Published: July 1990
View article titled, Study of crystallographic orientations in the diamond film on cubic boron nitride using Raman microprobe
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