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Journal Articles

mm-wave Rydberg–Rydberg transitions gauge intermolecular coupling in a molecular ultracold plasma

R. Wang, J. Sous, M. Aghigh, K. L. Marroquín, K. M. Grant, F. B. V. Martins, J. S. Keller, E. R. Grant

J. Chem. Phys. 157, 064305 (2022)

https://doi.org/10.1063/5.0083684

Published: August 2022

View article titled, mm-wave Rydberg–Rydberg transitions gauge intermolecular coupling in a molecular ultracold plasma

Journal Articles

Reverse breakdown studies of GaN MOSCAPs and their implications in vertical GaN power devices

C. Gupta, S. H. Chan, S. S. Pasayat, S. Keller, U. K. Mishra

J. Appl. Phys. 125, 124101 (2019)

https://doi.org/10.1063/1.5082652

Published: March 2019

View article titled, Reverse breakdown studies of GaN MOSCAPs and their implications in vertical GaN power devices

Journal Articles

On trapping mechanisms at oxide-traps in Al₂O₃/GaN metal-oxide-semiconductor capacitors

D. Bisi, S. H. Chan, X. Liu, R. Yeluri, S. Keller, M. Meneghini, G. Meneghesso, E. Zanoni, U. K. Mishra

Appl. Phys. Lett. 108, 112104 (2016)

https://doi.org/10.1063/1.4944466

Published: March 2016

View article titled, On trapping mechanisms at oxide-traps in Al2O3/GaN metal-oxide-semiconductor capacitors

Journal Articles

Electrical and structural characterizations of crystallized Al₂O₃/GaN interfaces formed by in situ metalorganic chemical vapor deposition

X. Liu, C. M. Jackson, F. Wu, B. Mazumder, R. Yeluri, J. Kim, S. Keller, A. R. Arehart, S. A. Ringel, J. S. Speck, U. K. Mishra

J. Appl. Phys. 119, 015303 (2016)

https://doi.org/10.1063/1.4939157

Published: January 2016

View article titled, Electrical and structural characterizations of crystallized Al2O3/GaN interfaces formed by in situ metalorganic chemical vapor deposition

Journal Articles

Time-resolved ion velocity distribution in a cylindrical Hall thruster: Heterodyne-based experiment and modeling

A. Diallo, S. Keller, Y. Shi, Y. Raitses, S. Mazouffre

Rev. Sci. Instrum. 86, 033506 (2015)

https://doi.org/10.1063/1.4914829

Published: March 2015

View article titled, Time-resolved ion velocity distribution in a cylindrical Hall thruster: Heterodyne-based experiment and modeling

Journal Articles

Erratum: “Temperature dependence of exciton-surface plasmon polariton coupling in Ag, Au, and Al films on In_xGa_1−xN/GaN quantum wells studied with time-resolved cathodoluminescence” [J. Appl. Phys. 117 , 043105 (2015)]

Y. Estrin, D. H. Rich, S. Keller, S. P. DenBaars

J. Appl. Phys. 117, 099902 (2015)

https://doi.org/10.1063/1.4914350

Published: March 2015

View article titled, Erratum: “Temperature dependence of exciton-surface plasmon polariton coupling in Ag, Au, and Al films on InxGa1−xN/GaN quantum wells studied with time-resolved cathodoluminescence” [J. Appl. Phys. 117 , 043105 (2015)]

Journal Articles

Temperature dependence of exciton-surface plasmon polariton coupling in Ag, Au, and Al films on In_xGa_1−xN/GaN quantum wells studied with time-resolved cathodoluminescence

Y. Estrin, D. H. Rich, S. Keller, S. P. DenBaars

J. Appl. Phys. 117, 043105 (2015)

https://doi.org/10.1063/1.4906850

Published: January 2015

View article titled, Temperature dependence of exciton-surface plasmon polariton coupling in Ag, Au, and Al films on InxGa1−xN/GaN quantum wells studied with time-resolved cathodoluminescence

Journal Articles

Impact ionization in N-polar AlGaN/GaN high electron mobility transistors

N. Killat, M. J. Uren, S. Keller, S. Kolluri, U. K. Mishra, M. Kuball

Appl. Phys. Lett. 105, 063506 (2014)

https://doi.org/10.1063/1.4892449

Published: August 2014

View article titled, Impact ionization in N-polar AlGaN/GaN high electron mobility transistors

Journal Articles

In situ metalorganic chemical vapor deposition of Al₂O₃ on N-face GaN and evidence of polarity induced fixed charge

X. Liu, J. Kim, D. J. Suntrup, S. Wienecke, M. Tahhan, R. Yeluri, S. H. Chan, J. Lu, H. Li, S. Keller, U. K. Mishra

Appl. Phys. Lett. 104, 263511 (2014)

https://doi.org/10.1063/1.4886768

Published: July 2014

View article titled, In situ metalorganic chemical vapor deposition of Al2O3 on N-face GaN and evidence of polarity induced fixed charge

Journal Articles

High-performance broadband optical coatings on InGaN/GaN solar cells for multijunction device integration

N. G. Young, E. E. Perl, R. M. Farrell, M. Iza, S. Keller, J. E. Bowers, S. Nakamura, S. P. DenBaars, J. S. Speck

Appl. Phys. Lett. 104, 163902 (2014)

https://doi.org/10.1063/1.4873117

Published: April 2014

View article titled, High-performance broadband optical coatings on InGaN/GaN solar cells for multijunction device integration

Journal Articles

Effect of intentional p-GaN surface roughening on the performance of InGaN/GaN solar cells

R. M. Farrell, A. A. Al-Heji, C. J. Neufeld, X. Chen, M. Iza, S. C. Cruz, S. Keller, S. Nakamura, S. P. DenBaars, U. K. Mishra, J. S. Speck

Appl. Phys. Lett. 103, 241104 (2013)

https://doi.org/10.1063/1.4844955

Published: December 2013

View article titled, Effect of intentional p-GaN surface roughening on the performance of InGaN/GaN solar cells

Journal Articles

Fixed charge and trap states of in situ Al₂O₃ on Ga-face GaN metal-oxide-semiconductor capacitors grown by metalorganic chemical vapor deposition

X. Liu, J. Kim, R. Yeluri, S. Lal, H. Li, J. Lu, S. Keller, B. Mazumder, J. S. Speck, U. K. Mishra

J. Appl. Phys. 114, 164507 (2013)

https://doi.org/10.1063/1.4827201

Published: October 2013

View article titled, Fixed charge and trap states of in situ Al2O3 on Ga-face GaN metal-oxide-semiconductor capacitors grown by metalorganic chemical vapor deposition

Journal Articles

High performance thin quantum barrier InGaN/GaN solar cells on sapphire and bulk (0001) GaN substrates

N. G. Young, R. M. Farrell, Y. L. Hu, Y. Terao, M. Iza, S. Keller, S. P. DenBaars, S. Nakamura, J. S. Speck

Appl. Phys. Lett. 103, 173903 (2013)

https://doi.org/10.1063/1.4826483

Published: October 2013

View article titled, High performance thin quantum barrier InGaN/GaN solar cells on sapphire and bulk (0001) GaN substrates

Journal Articles

In-situ metalorganic chemical vapor deposition and capacitance-voltage characterizations of Al₂O₃ on Ga-face GaN metal-oxide-semiconductor capacitors

X. Liu, R. Yeluri, J. Kim, S. Lal, A. Raman, C. Lund, S. Wienecke, J. Lu, M. Laurent, S. Keller, U. K. Mishra

Appl. Phys. Lett. 103, 053509 (2013)

https://doi.org/10.1063/1.4817385

Published: July 2013

View article titled, In-situ metalorganic chemical vapor deposition and capacitance-voltage characterizations of Al2O3 on Ga-face GaN metal-oxide-semiconductor capacitors

Journal Articles

Direct comparison of traps in InAlN/GaN and AlGaN/GaN high electron mobility transistors using constant drain current deep level transient spectroscopy

A. Sasikumar, A. R. Arehart, S. Martin-Horcajo, M. F. Romero, Y. Pei, D. Brown, F. Recht, M. A. di Forte-Poisson, F. Calle, M. J. Tadjer, S. Keller, S. P. DenBaars, U. K. Mishra, S. A. Ringel

Appl. Phys. Lett. 103, 033509 (2013)

https://doi.org/10.1063/1.4813862

Published: July 2013

View article titled, Direct comparison of traps in InAlN/GaN and AlGaN/GaN high electron mobility transistors using constant drain current deep level transient spectroscopy

Journal Articles

Spatially-resolved spectroscopic measurements of E_c − 0.57 eV traps in AlGaN/GaN high electron mobility transistors

D. W. Cardwell, A. Sasikumar, A. R. Arehart, S. W. Kaun, J. Lu, S. Keller, J. S. Speck, U. K. Mishra, S. A. Ringel, J. P. Pelz

Appl. Phys. Lett. 102, 193509 (2013)

https://doi.org/10.1063/1.4806980

Published: May 2013

View article titled, Spatially-resolved spectroscopic measurements of Ec − 0.57 eV traps in AlGaN/GaN high electron mobility transistors

Journal Articles

Polarization spectroscopy of N-polar AlGaN/GaN multi quantum wells grown on vicinal ( 000 1 ¯ ) GaN

S. Keller, N. Pfaff, S. P. DenBaars, U. K. Mishra

Appl. Phys. Lett. 101, 182103 (2012)

https://doi.org/10.1063/1.4764070

Published: October 2012

View article titled, Polarization spectroscopy of N-polar AlGaN/GaN multi quantum wells grown on vicinal ( 000 1 ¯ ) GaN

Journal Articles

Two-dimensional electron gas transport anisotropy in N-polar GaN/AlGaN heterostructures

G. A. Umana-Membreno, T. B. Fehlberg, S. Kolluri, D. F. Brown, S. Keller, U. K. Mishra, B. D. Nener, L. Faraone, G. Parish

Appl. Phys. Lett. 98, 222103 (2011)

https://doi.org/10.1063/1.3595341

Published: June 2011

View article titled, Two-dimensional electron gas transport anisotropy in N-polar GaN/AlGaN heterostructures

Journal Articles

High quantum efficiency InGaN/GaN multiple quantum well solar cells with spectral response extending out to 520 nm

R. M. Farrell, C. J. Neufeld, S. C. Cruz, J. R. Lang, M. Iza, S. Keller, S. Nakamura, S. P. DenBaars, U. K. Mishra, J. S. Speck

Appl. Phys. Lett. 98, 201107 (2011)

https://doi.org/10.1063/1.3591976

Published: May 2011

View article titled, High quantum efficiency InGaN/GaN multiple quantum well solar cells with spectral response extending out to 520 nm

Journal Articles

Properties of N-polar GaN films and AlGaN/GaN heterostructures grown on (111) silicon by metal organic chemical vapor deposition

S. Keller, Y. Dora, F. Wu, X. Chen, S. Chowdury, S. P. DenBaars, J. S. Speck, U. K. Mishra

Appl. Phys. Lett. 97, 142109 (2010)

https://doi.org/10.1063/1.3499428

Published: October 2010

View article titled, Properties of N-polar GaN films and AlGaN/GaN heterostructures grown on (111) silicon by metal organic chemical vapor deposition

NARROW

Topics

mm-wave Rydberg–Rydberg transitions gauge intermolecular coupling in a molecular ultracold plasma

Reverse breakdown studies of GaN MOSCAPs and their implications in vertical GaN power devices

On trapping mechanisms at oxide-traps in Al₂O₃/GaN metal-oxide-semiconductor capacitors

Electrical and structural characterizations of crystallized Al₂O₃/GaN interfaces formed by in situ metalorganic chemical vapor deposition

Time-resolved ion velocity distribution in a cylindrical Hall thruster: Heterodyne-based experiment and modeling

Erratum: “Temperature dependence of exciton-surface plasmon polariton coupling in Ag, Au, and Al films on In_xGa_1−xN/GaN quantum wells studied with time-resolved cathodoluminescence” [J. Appl. Phys. 117 , 043105 (2015)]

Temperature dependence of exciton-surface plasmon polariton coupling in Ag, Au, and Al films on In_xGa_1−xN/GaN quantum wells studied with time-resolved cathodoluminescence

Impact ionization in N-polar AlGaN/GaN high electron mobility transistors

In situ metalorganic chemical vapor deposition of Al₂O₃ on N-face GaN and evidence of polarity induced fixed charge

High-performance broadband optical coatings on InGaN/GaN solar cells for multijunction device integration

Effect of intentional p-GaN surface roughening on the performance of InGaN/GaN solar cells

Fixed charge and trap states of in situ Al₂O₃ on Ga-face GaN metal-oxide-semiconductor capacitors grown by metalorganic chemical vapor deposition

High performance thin quantum barrier InGaN/GaN solar cells on sapphire and bulk (0001) GaN substrates

In-situ metalorganic chemical vapor deposition and capacitance-voltage characterizations of Al₂O₃ on Ga-face GaN metal-oxide-semiconductor capacitors

Direct comparison of traps in InAlN/GaN and AlGaN/GaN high electron mobility transistors using constant drain current deep level transient spectroscopy

Spatially-resolved spectroscopic measurements of E_c − 0.57 eV traps in AlGaN/GaN high electron mobility transistors

Polarization spectroscopy of N-polar AlGaN/GaN multi quantum wells grown on vicinal ( 000 1 ¯ ) GaN

Two-dimensional electron gas transport anisotropy in N-polar GaN/AlGaN heterostructures

High quantum efficiency InGaN/GaN multiple quantum well solar cells with spectral response extending out to 520 nm

Properties of N-polar GaN films and AlGaN/GaN heterostructures grown on (111) silicon by metal organic chemical vapor deposition

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