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Journal Articles

Top-gated chemical vapor deposited MoS₂ field-effect transistors on Si₃N₄ substrates

A. Sanne, R. Ghosh, A. Rai, H. C. P. Movva, A. Sharma, R. Rao, L. Mathew, S. K. Banerjee

Appl. Phys. Lett. 106, 062101 (2015)

https://doi.org/10.1063/1.4907885

Published: February 2015

View articletitled, Top-gated chemical vapor deposited MoS2 field-effect transistors on Si3N4 substrates

Journal Articles

L_g = 100 nm In_0.7Ga_0.3As quantum well metal-oxide semiconductor field-effect transistors with atomic layer deposited beryllium oxide as interfacial layer

D. Koh, H. M. Kwon, T.-W. Kim, D.-H. Kim, Todd W. Hudnall, Christopher W. Bielawski, W. Maszara, D. Veksler, D. Gilmer, P. D. Kirsch, S. K. Banerjee

Appl. Phys. Lett. 104, 163502 (2014)

https://doi.org/10.1063/1.4871504

Published: April 2014

View articletitled, Lg = 100 nm In0.7Ga0.3As quantum well metal-oxide semiconductor field-effect transistors with atomic layer deposited beryllium oxide as interfacial layer

Journal Articles

Poly(methyl methacrylate) as a self-assembled gate dielectric for graphene field-effect transistors

A. Sanne, H. C. P. Movva, S. Kang, C. McClellan, C. M. Corbet, S. K. Banerjee

Appl. Phys. Lett. 104, 083106 (2014)

https://doi.org/10.1063/1.4866338

Published: February 2014

View articletitled, Poly(methyl methacrylate) as a self-assembled gate dielectric for graphene field-effect transistors

Journal Articles

Low interface defect density of atomic layer deposition BeO with self-cleaning reaction for InGaAs metal oxide semiconductor field effect transistors

H. S. Shin, J. H. Yum, D. W. Johnson, H. R. Harris, Todd. W. Hudnall, J. Oh, P. Kirsch, W.-E. Wang, C. W. Bielawski, S. K. Banerjee, J. C. Lee, H. D. Lee

Appl. Phys. Lett. 103, 223504 (2013)

https://doi.org/10.1063/1.4833815

Published: November 2013

View articletitled, Low interface defect density of atomic layer deposition BeO with self-cleaning reaction for InGaAs metal oxide semiconductor field effect transistors

Journal Articles

Evidence for hydrogen two-level systems in atomic layer deposition oxides

M. S. Khalil, M. J. A. Stoutimore, S. Gladchenko, A. M. Holder, C. B. Musgrave, A. C. Kozen, G. Rubloff, Y. Q. Liu, R. G. Gordon, J. H. Yum, S. K. Banerjee, C. J. Lobb, K. D. Osborn

Appl. Phys. Lett. 103, 162601 (2013)

https://doi.org/10.1063/1.4826253

Published: October 2013

View articletitled, Evidence for hydrogen two-level systems in atomic layer deposition oxides

Journal Articles

Ultra-smooth epitaxial Ge grown on Si(001) utilizing a thin C-doped Ge buffer layer

J. Mantey, W. Hsu, J. James, E. U. Onyegam, S. Guchhait, S. K. Banerjee

Appl. Phys. Lett. 102, 192111 (2013)

https://doi.org/10.1063/1.4807500

Published: May 2013

View articletitled, Ultra-smooth epitaxial Ge grown on Si(001) utilizing a thin C-doped Ge buffer layer

Journal Articles

A study of capping layers for sulfur monolayer doping on III-V junctions

J. H. Yum, H. S. Shin, R. Hill, J. Oh, H. D. Lee, Ryan M. Mushinski, Todd W. Hudnall, C. W. Bielawski, S. K. Banerjee, W. Y. Loh, Wei-E Wang, Paul Kirsch

Appl. Phys. Lett. 101, 253514 (2012)

https://doi.org/10.1063/1.4772641

Published: December 2012

View articletitled, A study of capping layers for sulfur monolayer doping on III-V junctions

Journal Articles

Spectroscopic evaluation of band alignment of atomic layer deposited BeO on Si(100)

Ming Lei, J. H. Yum, J. Price, Todd W. Hudnall, C. W. Bielawski, S. K. Banerjee, P. S. Lysaght, G. Bersuker, M. C. Downer

Appl. Phys. Lett. 100, 122906 (2012)

https://doi.org/10.1063/1.3697646

Published: March 2012

View articletitled, Spectroscopic evaluation of band alignment of atomic layer deposited BeO on Si(100)

Journal Articles

Spin-transfer-torque switching in spin valve structures with perpendicular, canted, and in-plane magnetic anisotropies

U. Roy, H. Seinige, F. Ferdousi, J. Mantey, M. Tsoi, S. K. Banerjee

J. Appl. Phys. 111, 07C913 (2012)

https://doi.org/10.1063/1.3677311

Published: March 2012

View articletitled, Spin-transfer-torque switching in spin valve structures with perpendicular, canted, and in-plane magnetic anisotropies

Journal Articles

Theoretical approach to evaluating beryllium oxide as a gate dielectric considering electromagnetics and thermal stability

J. H. Yum, G. Bersuker, J. Oh, S. K. Banerjee

Appl. Phys. Lett. 100, 053501 (2012)

https://doi.org/10.1063/1.3679720

Published: January 2012

View articletitled, Theoretical approach to evaluating beryllium oxide as a gate dielectric considering electromagnetics and thermal stability

Journal Articles

Comparison of the self-cleaning effects and electrical characteristics of BeO and Al₂O₃ deposited as an interface passivation layer on GaAs MOS devices

J. H. Yum, T. Akyol, D. A. Ferrer, J. C. Lee, S. K. Banerjee, M. Lei, M. Downer, Todd. W. Hudnall, C. W. Bielawski, G. Bersuker

J. Vac. Sci. Technol. A 29, 061501 (2011)

https://doi.org/10.1116/1.3628546

Published: September 2011

View articletitled, Comparison of the self-cleaning effects and electrical characteristics of BeO and Al2O3 deposited as an interface passivation layer on GaAs MOS devices

Journal Articles

Inversion type InP metal oxide semiconductor field effect transistor using novel atomic layer deposited BeO gate dielectric

J. H. Yum, T. Akyol, M. Lei, D. A. Ferrer, Todd. W. Hudnall, M. Downer, C. W. Bielawski, G. Bersuker, J. C. Lee, S. K. Banerjee

Appl. Phys. Lett. 99, 033502 (2011)

https://doi.org/10.1063/1.3614446

Published: July 2011

View articletitled, Inversion type InP metal oxide semiconductor field effect transistor using novel atomic layer deposited BeO gate dielectric

Journal Articles

Origin of shape anisotropy effects in solution-phase synthesized FePt nanomagnets

D. A. Ferrer, S. Guchhait, H. Liu, F. Ferdousi, C. Corbet, H. Xu, M. Doczy, G. Bourianoff, L. Mathew, R. Rao, S. Saha, M. Ramon, S. Ganguly, J. T. Markert, S. K. Banerjee

J. Appl. Phys. 110, 014316 (2011)

https://doi.org/10.1063/1.3608109

Published: July 2011

View articletitled, Origin of shape anisotropy effects in solution-phase synthesized FePt nanomagnets

Journal Articles

Atomic layer deposited beryllium oxide: Effective passivation layer for III-V metal/oxide/semiconductor devices

J. H. Yum, T. Akyol, M. Lei, T. Hudnall, G. Bersuker, M. Downer, C. W. Bielawski, J. C. Lee, S. K. Banerjee

J. Appl. Phys. 109, 064101 (2011)

https://doi.org/10.1063/1.3553872

Published: March 2011

View articletitled, Atomic layer deposited beryllium oxide: Effective passivation layer for III-V metal/oxide/semiconductor devices

Journal Articles

Hall mobility measurements in enhancement-mode GaAs field-effect transistors with Al 2 O 3 gate dielectric

D. Shahrjerdi, J. Nah, B. Hekmatshoar, T. Akyol, M. Ramon, E. Tutuc, S. K. Banerjee

Appl. Phys. Lett. 97, 213506 (2010)

https://doi.org/10.1063/1.3521284

Published: November 2010

View articletitled, Hall mobility measurements in enhancement-mode GaAs field-effect transistors with Al 2 O 3 gate dielectric

Journal Articles

Band engineered epitaxial Ge – Si x Ge 1 − x core-shell nanowire heterostructures

K. M. Varahramyan, D. Ferrer, E. Tutuc, S. K. Banerjee

Appl. Phys. Lett. 95, 033101 (2009)

https://doi.org/10.1063/1.3173811

Published: July 2009

View articletitled, Band engineered epitaxial Ge – Si x Ge 1 − x core-shell nanowire heterostructures

Journal Articles

Realization of dual-gated Ge – Si x Ge 1 − x core-shell nanowire field effect transistors with highly doped source and drain

Junghyo Nah, E.-S. Liu, D. Shahrjerdi, K. M. Varahramyan, S. K. Banerjee, E. Tutuc

Appl. Phys. Lett. 94, 063117 (2009)

https://doi.org/10.1063/1.3079410

Published: February 2009

View articletitled, Realization of dual-gated Ge – Si x Ge 1 − x core-shell nanowire field effect transistors with highly doped source and drain

Journal Articles

Doping of Ge – Si x Ge 1 − x core-shell nanowires using low energy ion implantation

Junghyo Nah, K. Varahramyan, E.-S. Liu, S. K. Banerjee, E. Tutuc

Appl. Phys. Lett. 93, 203108 (2008)

https://doi.org/10.1063/1.3013335

Published: November 2008

View articletitled, Doping of Ge – Si x Ge 1 − x core-shell nanowires using low energy ion implantation

Journal Articles

Chemical and physical interface studies of the atomic-layer-deposited Al 2 O 3 on GaAs substrates

D. Shahrjerdi, D. I. Garcia-Gutierrez, E. Tutuc, S. K. Banerjee

Appl. Phys. Lett. 92, 223501 (2008)

https://doi.org/10.1063/1.2937404

Published: June 2008

View articletitled, Chemical and physical interface studies of the atomic-layer-deposited Al 2 O 3 on GaAs substrates

Journal Articles

Fabrication and characterization of metal-oxide-semiconductor GaAs capacitors on Ge ∕ Si 1 − x Ge x ∕ Si substrates with Al 2 O 3 gate dielectric

D. Shahrjerdi, N. Nuntawong, G. Balakrishnan, D. I. Garcia-Gutierrez, A. Khoshakhlagh, E. Tutuc, D. Huffaker, J. C. Lee, S. K. Banerjee

J. Vac. Sci. Technol. B 26, 1182–1186 (2008)

https://doi.org/10.1116/1.2835061

Published: May 2008

View articletitled, Fabrication and characterization of metal-oxide-semiconductor GaAs capacitors on Ge ∕ Si 1 − x Ge x ∕ Si substrates with Al 2 O 3 gate dielectric

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Top-gated chemical vapor deposited MoS₂ field-effect transistors on Si₃N₄ substrates

L_g = 100 nm In_0.7Ga_0.3As quantum well metal-oxide semiconductor field-effect transistors with atomic layer deposited beryllium oxide as interfacial layer

Poly(methyl methacrylate) as a self-assembled gate dielectric for graphene field-effect transistors

Low interface defect density of atomic layer deposition BeO with self-cleaning reaction for InGaAs metal oxide semiconductor field effect transistors

Evidence for hydrogen two-level systems in atomic layer deposition oxides

Ultra-smooth epitaxial Ge grown on Si(001) utilizing a thin C-doped Ge buffer layer

A study of capping layers for sulfur monolayer doping on III-V junctions

Spectroscopic evaluation of band alignment of atomic layer deposited BeO on Si(100)

Spin-transfer-torque switching in spin valve structures with perpendicular, canted, and in-plane magnetic anisotropies

Theoretical approach to evaluating beryllium oxide as a gate dielectric considering electromagnetics and thermal stability

Comparison of the self-cleaning effects and electrical characteristics of BeO and Al₂O₃ deposited as an interface passivation layer on GaAs MOS devices

Inversion type InP metal oxide semiconductor field effect transistor using novel atomic layer deposited BeO gate dielectric

Origin of shape anisotropy effects in solution-phase synthesized FePt nanomagnets

Atomic layer deposited beryllium oxide: Effective passivation layer for III-V metal/oxide/semiconductor devices

Hall mobility measurements in enhancement-mode GaAs field-effect transistors with Al 2 O 3 gate dielectric

Band engineered epitaxial Ge – Si x Ge 1 − x core-shell nanowire heterostructures

Realization of dual-gated Ge – Si x Ge 1 − x core-shell nanowire field effect transistors with highly doped source and drain

Doping of Ge – Si x Ge 1 − x core-shell nanowires using low energy ion implantation

Chemical and physical interface studies of the atomic-layer-deposited Al 2 O 3 on GaAs substrates

Fabrication and characterization of metal-oxide-semiconductor GaAs capacitors on Ge ∕ Si 1 − x Ge x ∕ Si substrates with Al 2 O 3 gate dielectric

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