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Journal Articles

Depth-resolved cathodoluminescence in γ/β-Ga2O3 polymorph junctions

E. B. Yakimov, E. E. Yakimov, A. Y. Polyakov, A. A. Vasilev, I. V. Schemerov, A. Kuznetsov, S. J. Pearton
Journal: APL Materials
APL Mater. 13, 041126 (2025)
https://doi.org/10.1063/5.0267939
Published: April 2025
View articletitled, Depth-resolved cathodoluminescence in γ/β-Ga2O3 polymorph junctions
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Journal Articles

Trap states and hydrogenation of implanted Si in semi-insulating Ga2O3(Fe)

Editor’s Pick
A. Y. Polyakov, I. V. Schemerov, A. A. Vasilev, A. A. Romanov, P. B. Lagov, A. V. Miakonkikh, A. V. Chernykh, E. P. Romanteeva, S. V. Chernykh, O. I. Rabinovich, S. J. Pearton
Journal: Journal of Vacuum Science & Technology A
J. Vac. Sci. Technol. A 43, 033403 (2025)
https://doi.org/10.1116/6.0004463
Published: March 2025
View articletitled, Trap states and hydrogenation of implanted Si in semi-insulating Ga2O3(Fe)
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Journal Articles

Perspective on comparative radiation hardness of Ga2O3 polymorphs

Featured
S. J. Pearton, Fan Ren, Alexander Y. Polyakov, Eugene B. Yakimov, Leonid Chernyak, Aman Haque
Journal: Journal of Vacuum Science & Technology A
J. Vac. Sci. Technol. A 43, 038501 (2025)
https://doi.org/10.1116/6.0004444
Published: March 2025
View articletitled, Perspective on comparative radiation hardness of Ga2O3 polymorphs
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Journal Articles

Point defect effects in AlGaN 270-nm light emitting diodes introduced by MeV electron and proton irradiation

A. Y. Polyakov, L. A. Alexanyan, I. V. Schemerov, A. A. Vasilev, A. V. Chernykh, Anton Ivanov, Nadezhda Talnishnikh, Anton Chernyakov, A. L. Zakgeim, N. M. Shmidt, P. B. Lagov, A. S. Doroshkevich, R. Sh. Isayev, Yu. S. Pavlov, Hsiao-Hsuan Wan, Fan Ren, S. J. Pearton
Journal: APL Materials
APL Mater. 12, 121121 (2024)
https://doi.org/10.1063/5.0231390
Published: December 2024
View articletitled, Point defect effects in AlGaN 270-nm light emitting diodes introduced by MeV electron and proton irradiation
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Journal Articles

MeV proton and neutron damage effects on deep-ultraviolet light-emitting diodes

Jian-Sian Li, Chao-Ching Chiang, Hsiao-Hsuan Wan, Jihyun Kim, Simon Barke, Peter Wass, Fan Ren, John W. Conklin, S. J. Pearton
Journal: Journal of Vacuum Science & Technology B
J. Vac. Sci. Technol. B 42, 052206 (2024)
https://doi.org/10.1116/6.0003818
Published: August 2024
View articletitled, MeV proton and neutron damage effects on deep-ultraviolet light-emitting diodes
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Journal Articles

Effects of athermal carrier injection on Co-60 gamma-ray damage in SiC merged-PiN Schottky diodes

Editor’s Pick
Jian-Sian Li, Chao-Ching Chiang, Hsiao-Hsuan Wan, Sergei P. Stepanoff, Fan Ren, Aman Haque, Douglas Wolfe, S. J. Pearton
Journal: Journal of Vacuum Science & Technology B
J. Vac. Sci. Technol. B 42, 052203 (2024)
https://doi.org/10.1116/6.0003819
Published: August 2024
View articletitled, Effects of athermal carrier injection on Co-60 gamma-ray damage in SiC merged-PiN Schottky diodes
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Journal Articles

Observation of temperature-dependent capture cross section for main deep-levels in β-Ga2O3

A. A. Vasilev, A. I. Kochkova, A. Y. Polyakov, A. A. Romanov, N. R. Matros, L. A. Alexanyan, I. V. Shchemerov, S. J. Pearton
Journal: Journal of Applied Physics
J. Appl. Phys. 136, 025701 (2024)
https://doi.org/10.1063/5.0209322
Published: July 2024
View articletitled, Observation of temperature-dependent capture cross section for main deep-levels in β-Ga2O3
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Journal Articles

Trap states and carrier diffusion lengths in NiO/β-Ga2O3 heterojunctions

A. Y. Polyakov, E. B. Yakimov, D. S. Saranin, A. V. Chernykh, A. A. Vasilev, P. Gostishchev, A. I. Kochkova, L. A. Alexanyan, N. R. Matros, I. V. Shchemerov, S. J. Pearton
Journal: Journal of Applied Physics
J. Appl. Phys. 135, 165703 (2024)
https://doi.org/10.1063/5.0203526
Published: April 2024
View articletitled, Trap states and carrier diffusion lengths in NiO/β-Ga2O3 heterojunctions
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Journal Articles

Color center in β -Ga2O3 emitting at the telecom range

J. E. Stehr, M. Jansson, S. J. Pearton, J. S. McCloy, J. Jesenovec, B. L. Dutton, M. D. McCluskey, W. M. Chen, I. A. Buyanova
Journal: Applied Physics Letters
Appl. Phys. Lett. 124, 042104 (2024)
https://doi.org/10.1063/5.0179921
Published: January 2024
View articletitled, Color center in β -Ga2O3 emitting at the telecom range
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Includes: Supplementary data
Journal Articles

E-mode AlGaN/GaN HEMTs using p-NiO gates

Chao-Ching Chiang, Hsiao-Hsuan Wan, Jian-Sian Li, Fan Ren, Timothy Jinsoo Yoo, Honggyu Kim, S. J. Pearton
Journal: Journal of Vacuum Science & Technology B
J. Vac. Sci. Technol. B 41, 062205 (2023)
https://doi.org/10.1116/6.0003119
Published: November 2023
View articletitled, E-mode AlGaN/GaN HEMTs using p-NiO gates
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Journal Articles

Effect of drift layer doping and NiO parameters in achieving 8.9 kV breakdown in 100 μm diameter and 4 kV/4 A in 1 mm diameter NiO/β-Ga2O3 rectifiers

Jian-Sian Li, Chao-Ching Chiang, Xinyi Xia, Hsiao-Hsuan Wan, Fan Ren, S. J. Pearton
Journal: Journal of Vacuum Science & Technology A
J. Vac. Sci. Technol. A 41, 043404 (2023)
https://doi.org/10.1116/6.0002722
Published: June 2023
View articletitled, Effect of drift layer doping and NiO parameters in achieving 8.9 kV breakdown in 100 μm diameter and 4 kV/4 A in 1 mm diameter NiO/β-Ga2O3 rectifiers
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Journal Articles

Transport and trap states in proton irradiated ultra-thick κ-Ga2O3

A. Y. Polyakov, V. I. Nikolaev, A. I. Pechnikov, E. B. Yakimov, P. B. Lagov, I. V. Shchemerov, A. A. Vasilev, A. I. Kochkova, A. V. Chernykh, In-Hwan Lee, S. J. Pearton
Journal: Journal of Vacuum Science & Technology A
J. Vac. Sci. Technol. A 41, 032705 (2023)
https://doi.org/10.1116/6.0002673
Published: April 2023
View articletitled, Transport and trap states in proton irradiated ultra-thick κ-Ga2O3
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Includes: Supplementary data
Journal Articles

Radiation damage in GaN/AlGaN and SiC electronic and photonic devices

S. J. Pearton, Xinyi Xia, Fan Ren, Md Abu Jafar Rasel, Sergei Stepanoff, Nahid Al-Mamun, Aman Haque, Douglas E. Wolfe
Journal: Journal of Vacuum Science & Technology B
J. Vac. Sci. Technol. B 41, 030802 (2023)
https://doi.org/10.1116/6.0002628
Published: April 2023
View articletitled, Radiation damage in GaN/AlGaN and SiC electronic and photonic devices
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Journal Articles

7.5 kV, 6.2 GW cm−2 NiO/β-Ga2O3 vertical rectifiers with on–off ratio greater than 1013

Jian-Sian Li, Chao-Ching Chiang, Xinyi Xia, Hsiao-Hsuan Wan, Fan Ren, S. J. Pearton
Journal: Journal of Vacuum Science & Technology A
J. Vac. Sci. Technol. A 41, 030401 (2023)
https://doi.org/10.1116/6.0002580
Published: April 2023
View articletitled, 7.5 kV, 6.2 GW cm−2 NiO/β-Ga2O3 vertical rectifiers with on–off ratio greater than 1013
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Journal Articles

NiO/β-(AlxGa1−x)2O3/Ga2O3 heterojunction lateral rectifiers with reverse breakdown voltage >7 kV

Hsiao-Hsuan Wan, Jian-Sian Li, Chao-Ching Chiang, Xinyi Xia, Fan Ren, Hannah N. Masten, James Spencer Lundh, Joseph A. Spencer, Fikadu Alema, Andrei Osinsky, Alan G. Jacobs, Karl Hobart, Marko J. Tadjer, S. J. Pearton
Journal: Journal of Vacuum Science & Technology A
J. Vac. Sci. Technol. A 41, 032701 (2023)
https://doi.org/10.1116/6.0002393
Published: March 2023
View articletitled, NiO/β-(AlxGa1−x)2O3/Ga2O3 heterojunction lateral rectifiers with reverse breakdown voltage >7 kV
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Journal Articles

Tuning electrical properties in Ga2O3 polymorphs induced with ion beams

A. Y. Polyakov, А. I. Kochkova, A. Azarov, V. Venkatachalapathy, A. V. Miakonkikh, A. A. Vasilev, A. V. Chernykh, I. V. Shchemerov, A. A. Romanov, A. Kuznetsov, S. J. Pearton
Journal: Journal of Applied Physics
J. Appl. Phys. 133, 095701 (2023)
https://doi.org/10.1063/5.0133181
Published: March 2023
View articletitled, Tuning electrical properties in Ga2O3 polymorphs induced with ion beams
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Includes: Supplementary data
Journal Articles

Type-II band alignment for atomic layer deposited HfSiO4 on α-Ga2O3

Featured
Xinyi Xia, Jian-Sian Li, Zhuoqun Wen, Kamruzzaman Khan, Md Irfan Khan, Elaheh Ahmadi, Yuichi Oshima, David C. Hays, Fan Ren, S. J. Pearton
Journal: Journal of Vacuum Science & Technology A
J. Vac. Sci. Technol. A 41, 023205 (2023)
https://doi.org/10.1116/6.0002453
Published: March 2023
View articletitled, Type-II band alignment for atomic layer deposited HfSiO4 on α-Ga2O3
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Journal Articles

On the possible nature of deep centers in Ga2O3

Featured
A. Y. Polyakov, A. I. Kochkova, Amanda Langørgen, Lasse Vines, A. Vasilev, I. V. Shchemerov, A. A. Romanov, S. J. Pearton
Journal: Journal of Vacuum Science & Technology A
J. Vac. Sci. Technol. A 41, 023401 (2023)
https://doi.org/10.1116/6.0002307
Published: January 2023
View articletitled, On the possible nature of deep centers in Ga2O3
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Includes: Supplementary data
Journal Articles

Reversible total ionizing dose effects in NiO/Ga2O3 heterojunction rectifiers

Jian-Sian Li, Chao-Ching Chiang, Xinyi Xia, Sergei Stepanoff, Aman Haque, Douglas E. Wolfe, Fan Ren, S. J. Pearton
Journal: Journal of Applied Physics
J. Appl. Phys. 133, 015702 (2023)
https://doi.org/10.1063/5.0134823
Published: January 2023
View articletitled, Reversible total ionizing dose effects in NiO/Ga2O3 heterojunction rectifiers
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Journal Articles

Deposition of sputtered NiO as a p-type layer for heterojunction diodes with Ga2O3

Jian-Sian Li, Xinyi Xia, Chao-Ching Chiang, David C. Hays, Brent P. Gila, Valentin Craciun, Fan Ren, S. J. Pearton
Journal: Journal of Vacuum Science & Technology A
J. Vac. Sci. Technol. A 41, 013405 (2023)
https://doi.org/10.1116/6.0002250
Published: December 2022
View articletitled, Deposition of sputtered NiO as a p-type layer for heterojunction diodes with Ga2O3
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