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Journal Articles

Enhancement of responsivity for a transistor terahertz detector by a Fabry-Pérot resonance-cavity

H. W. Hou, Z. Liu, J. H. Teng, T. Palacios, S. J. Chua

Appl. Phys. Lett. 110, 162101 (2017)

https://doi.org/10.1063/1.4981397

Published: April 2017

View article titled, Enhancement of responsivity for a transistor terahertz detector by a Fabry-Pérot resonance-cavity

Journal Articles

Publisher’s Note: “Correlation of a generation-recombination center with a deep level trap in GaN” [Appl. Phys. Lett. 106 , 102101 (2015)]

X. S. Nguyen, K. Lin, Z. Zhang, B. McSkimming, A. R. Arehart, J. S. Speck, S. A. Ringel, E. A. Fitzgerald, S. J. Chua

Appl. Phys. Lett. 106, 159903 (2015)

https://doi.org/10.1063/1.4918373

Published: April 2015

View article titled, Publisher’s Note: “Correlation of a generation-recombination center with a deep level trap in GaN” [Appl. Phys. Lett. 106 , 102101 (2015)]

Journal Articles

Correlation of a generation-recombination center with a deep level trap in GaN

X. S. Nguyen, K. Lin, Z. Zhang, B. McSkimming, A. R. Arehart, J. S. Speck, S. A. Ringel, E. A. Fitzgerald, S. J. Chua

Appl. Phys. Lett. 106, 102101 (2015)

https://doi.org/10.1063/1.4914393

Published: March 2015

View article titled, Correlation of a generation-recombination center with a deep level trap in GaN

Journal Articles

Determination of carrier concentration dependent electron effective mass and scattering time of n-ZnO thin film by terahertz time domain spectroscopy

J. Tang, L. Y. Deng, C. B. Tay, X. H. Zhang, J. W. Chai, H. Qin, H. W. Liu, T. Venkatesan, S. J. Chua

J. Appl. Phys. 115, 033111 (2014)

https://doi.org/10.1063/1.4861421

Published: January 2014

View article titled, Determination of carrier concentration dependent electron effective mass and scattering time of n-ZnO thin film by terahertz time domain spectroscopy

Journal Articles

Crystallographically tilted and partially strain relaxed GaN grown on inclined {111} facets etched on Si(100) substrate

K. K. Ansah Antwi, C. B. Soh, Q. Wee, Rayson J. N. Tan, P. Yang, H. R. Tan, L. F. Sun, Z. X. Shen, S. J. Chua

J. Appl. Phys. 114, 243512 (2013)

https://doi.org/10.1063/1.4856275

Published: December 2013

View article titled, Crystallographically tilted and partially strain relaxed GaN grown on inclined {111} facets etched on Si(100) substrate

Journal Articles

III-nitride light-emitting diode with embedded photonic crystals

K. H. Li, K. Y. Zang, S. J. Chua, H. W. Choi

Appl. Phys. Lett. 102, 181117 (2013)

https://doi.org/10.1063/1.4804678

Published: May 2013

View article titled, III-nitride light-emitting diode with embedded photonic crystals

Journal Articles

Green luminescence from Cu-doped ZnO nanorods: Role of Zn vacancies and negative thermal quenching

X. H. Huang, C. Zhang, C. B. Tay, T. Venkatesan, S. J. Chua

Appl. Phys. Lett. 102, 111106 (2013)

https://doi.org/10.1063/1.4798240

Published: March 2013

View article titled, Green luminescence from Cu-doped ZnO nanorods: Role of Zn vacancies and negative thermal quenching

Includes: Supplementary data

Journal Articles

Auger recombination as the dominant recombination process in indium nitride at low temperatures during steady-state photoluminescence

I. P. Seetoh, C. B. Soh, E. A. Fitzgerald, S. J. Chua

Appl. Phys. Lett. 102, 101112 (2013)

https://doi.org/10.1063/1.4795793

Published: March 2013

View article titled, Auger recombination as the dominant recombination process in indium nitride at low temperatures during steady-state photoluminescence

Journal Articles

Influence of stress on structural properties of AlGaN/GaN high electron mobility transistor layers grown on 150 mm diameter Si (111) substrate

H. F. Liu, S. B. Dolmanan, L. Zhang, S. J. Chua, D. Z. Chi, M. Heuken, S. Tripathy

J. Appl. Phys. 113, 023510 (2013)

https://doi.org/10.1063/1.4774288

Published: January 2013

View article titled, Influence of stress on structural properties of AlGaN/GaN high electron mobility transistor layers grown on 150 mm diameter Si (111) substrate

Journal Articles

Extremely high extinction ratio terahertz broadband polarizer using bilayer subwavelength metal wire-grid structure

L. Y. Deng, J. H. Teng, L. Zhang, Q. Y. Wu, H. Liu, X. H. Zhang, S. J. Chua

Appl. Phys. Lett. 101, 011101 (2012)

https://doi.org/10.1063/1.4729826

Published: July 2012

View article titled, Extremely high extinction ratio terahertz broadband polarizer using bilayer subwavelength metal wire-grid structure

Journal Articles

Properties of In_xGa_1−xN films in terahertz range

A. Gauthier-Brun, J. H. Teng, E. Dogheche, W. Liu, A. Gokarna, M. Tonouchi, S. J. Chua, D. Decoster

Appl. Phys. Lett. 100, 071913 (2012)

https://doi.org/10.1063/1.3684836

Published: February 2012

View article titled, Properties of In<sub>x</sub>Ga<sub>1−x</sub>N films in terahertz range

Journal Articles

Effects of annealing on structural and optical properties of InGaN/GaN multiple quantum wells at emission wavelength of 490 nm

H. F. Liu, W. Liu, A. M. Yong, X. H. Zhang, S. J. Chua, D. Z. Chi

J. Appl. Phys. 110, 063505 (2011)

https://doi.org/10.1063/1.3638703

Published: September 2011

View article titled, Effects of annealing on structural and optical properties of InGaN/GaN multiple quantum wells at emission wavelength of 490 nm

Journal Articles

Enhanced optical performance of amber emitting quantum dots incorporated InGaN/GaN light-emitting diodes with growth on UV-enhanced electrochemically etched nanoporous GaN

C. B. Soh, W. Liu, H. Hartono, Norman S. S. Ang, S. J. Chua, S. Y. Chow, C. B. Tay, A. P. Vajpeyi

Appl. Phys. Lett. 98, 191906 (2011)

https://doi.org/10.1063/1.3589969

Published: May 2011

View article titled, Enhanced optical performance of amber emitting quantum dots incorporated InGaN/GaN light-emitting diodes with growth on UV-enhanced electrochemically etched nanoporous GaN

Journal Articles

Retraction: “Growth of single crystal ZnO nanorods on GaN using an aqueous solution method” [Appl. Phys. Lett. 87, 101908 (2005)]

H. Q. Le, S. J. Chua, Y. W. Koh, K. P. Loh, Z. Chen, C. V. Thompson, E. A. Fitzgerald

Appl. Phys. Lett. 97, 239903 (2010)

https://doi.org/10.1063/1.3512959

Published: December 2010

View article titled, Retraction: “Growth of single crystal ZnO nanorods on GaN using an aqueous solution method” [Appl. Phys. Lett. 87, 101908 (2005)]

Journal Articles

Generation of amber III-nitride based light emitting diodes by indium rich InGaN quantum dots with InGaN wetting layer and AlN encapsulation layer

C. B. Soh, W. Liu, S. J. Chua, S. S. Ang, Rayson J. N. Tan, S. Y. Chow

J. Appl. Phys. 108, 093501 (2010)

https://doi.org/10.1063/1.3499618

Published: November 2010

View article titled, Generation of amber III-nitride based light emitting diodes by indium rich InGaN quantum dots with InGaN wetting layer and AlN encapsulation layer

Journal Articles

Epitaxial growth and chemical lift-off of GaInN/GaN heterostructures on c - and r -sapphire substrates employing ZnO sacrificial templates

H. F. Liu, W. Liu, S. J. Chua

J. Vac. Sci. Technol. A 28, 590–594 (2010)

https://doi.org/10.1116/1.3443220

Published: June 2010

View article titled, Epitaxial growth and chemical lift-off of GaInN/GaN heterostructures on c - and r -sapphire substrates employing ZnO sacrificial templates

Journal Articles

Optical and microstructural properties versus indium content in In x Ga 1 − x N films grown by metal organic chemical vapor deposition

A. Gokarna, A. Gauthier-Brun, W. Liu, Y. Androussi, E. Dumont, E. Dogheche, J. H. Teng, S. J. Chua, D. Decoster

Appl. Phys. Lett. 96, 191909 (2010)

https://doi.org/10.1063/1.3425761

Published: May 2010

View article titled, Optical and microstructural properties versus indium content in In x Ga 1 − x N films grown by metal organic chemical vapor deposition

Includes: Supplementary data

Journal Articles

Doping behavior of phosphorus in ZnO thin films: Effects of doping concentration and postgrowth thermal annealing

H. F. Liu, S. J. Chua

Appl. Phys. Lett. 96, 091902 (2010)

https://doi.org/10.1063/1.3337099

Published: March 2010

View article titled, Doping behavior of phosphorus in ZnO thin films: Effects of doping concentration and postgrowth thermal annealing

Journal Articles

Optical properties of 1.3 μ m InAs/GaAs bilayer quantum dots with high areal density

C. Y. Ngo, S. F. Yoon, D. R. Lim, Vincent Wong, S. J. Chua

Appl. Phys. Lett. 95, 181913 (2009)

https://doi.org/10.1063/1.3262960

Published: November 2009

View article titled, Optical properties of 1.3 μ m InAs/GaAs bilayer quantum dots with high areal density

Journal Articles

Erratum: “Effects of low-temperature-buffer, rf-power, and annealing on structural and optical properties of ZnO / Al 2 O 3 (0001) thin films grown by rf-magnetron sputtering” [J. Appl. Phys. 106, 023511 (2009)]

H. F. Liu, S. J. Chua

J. Appl. Phys. 106, 069901 (2009)

https://doi.org/10.1063/1.3238261

Published: September 2009

View article titled, Erratum: “Effects of low-temperature-buffer, rf-power, and annealing on structural and optical properties of ZnO / Al 2 O 3 (0001) thin films grown by rf-magnetron sputtering” [J. Appl. Phys. 106, 023511 (2009)]

NARROW

Topics

Enhancement of responsivity for a transistor terahertz detector by a Fabry-Pérot resonance-cavity

Publisher’s Note: “Correlation of a generation-recombination center with a deep level trap in GaN” [Appl. Phys. Lett. 106 , 102101 (2015)]

Correlation of a generation-recombination center with a deep level trap in GaN

Determination of carrier concentration dependent electron effective mass and scattering time of n-ZnO thin film by terahertz time domain spectroscopy

Crystallographically tilted and partially strain relaxed GaN grown on inclined {111} facets etched on Si(100) substrate

III-nitride light-emitting diode with embedded photonic crystals

Green luminescence from Cu-doped ZnO nanorods: Role of Zn vacancies and negative thermal quenching

Auger recombination as the dominant recombination process in indium nitride at low temperatures during steady-state photoluminescence

Influence of stress on structural properties of AlGaN/GaN high electron mobility transistor layers grown on 150 mm diameter Si (111) substrate

Extremely high extinction ratio terahertz broadband polarizer using bilayer subwavelength metal wire-grid structure

Properties of In_xGa_1−xN films in terahertz range

Effects of annealing on structural and optical properties of InGaN/GaN multiple quantum wells at emission wavelength of 490 nm

Enhanced optical performance of amber emitting quantum dots incorporated InGaN/GaN light-emitting diodes with growth on UV-enhanced electrochemically etched nanoporous GaN

Retraction: “Growth of single crystal ZnO nanorods on GaN using an aqueous solution method” [Appl. Phys. Lett. 87, 101908 (2005)]

Generation of amber III-nitride based light emitting diodes by indium rich InGaN quantum dots with InGaN wetting layer and AlN encapsulation layer

Epitaxial growth and chemical lift-off of GaInN/GaN heterostructures on c - and r -sapphire substrates employing ZnO sacrificial templates

Optical and microstructural properties versus indium content in In x Ga 1 − x N films grown by metal organic chemical vapor deposition

Doping behavior of phosphorus in ZnO thin films: Effects of doping concentration and postgrowth thermal annealing

Optical properties of 1.3 μ m InAs/GaAs bilayer quantum dots with high areal density

Erratum: “Effects of low-temperature-buffer, rf-power, and annealing on structural and optical properties of ZnO / Al 2 O 3 (0001) thin films grown by rf-magnetron sputtering” [J. Appl. Phys. 106, 023511 (2009)]

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