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Journal Articles

Amorphous InGaZnO ultraviolet phototransistors with double-stack Ga₂O₃/SiO₂ dielectric

T. H. Chang, C. J. Chiu, S. J. Chang, T. Y. Tsai, T. H. Yang, Z. D. Huang, W. Y. Weng

Appl. Phys. Lett. 102, 221104 (2013)

https://doi.org/10.1063/1.4808164

Published: June 2013

View articletitled, Amorphous InGaZnO ultraviolet phototransistors with double-stack Ga2O3/SiO2 dielectric

Journal Articles

High responsivity of amorphous indium gallium zinc oxide phototransistor with Ta₂O₅ gate dielectric

T. H. Chang, C. J. Chiu, W. Y. Weng, S. J. Chang, T. Y. Tsai, Z. D. Huang

Appl. Phys. Lett. 101, 261112 (2012)

https://doi.org/10.1063/1.4773307

Published: December 2012

View articletitled, High responsivity of amorphous indium gallium zinc oxide phototransistor with Ta2O5 gate dielectric

Journal Articles

Effects of Oxygen Contents in the Active Channel Layer on Electrical Characteristics of IGZO‐Based Thin Film Transistors

C. J. Chiu, S. P. Chang, C. Y. Lu, P. Y. Su, S. J. Chang

AIP Conf. Proc. 1399, 931–932 (2011)

https://doi.org/10.1063/1.3666682

Published: December 2011

View articletitled, Effects of Oxygen Contents in the Active Channel Layer on Electrical Characteristics of IGZO‐Based Thin Film Transistors

Journal Articles

High‐Performance a‐IGZO Thin‐Film Transistor with Organic Polymer Dielectric Layer

C. J. Chiu, S. P. Chang, C. Y. Lu, P. Y. Su, S. J. Chang

AIP Conf. Proc. 1399, 929–930 (2011)

https://doi.org/10.1063/1.3666681

Published: December 2011

View articletitled, High‐Performance a‐IGZO Thin‐Film Transistor with Organic Polymer Dielectric Layer

Journal Articles

InGaN metal-semiconductor-metal photodetectors with triethylgallium precursor and unactivated Mg-doped GaN cap layers

K. H. Lee, P. C. Chang, S. J. Chang, S. L. Wu

J. Appl. Phys. 110, 083113 (2011)

https://doi.org/10.1063/1.3653834

Published: October 2011

View articletitled, InGaN metal-semiconductor-metal photodetectors with triethylgallium precursor and unactivated Mg-doped GaN cap layers

Journal Articles

AlGaN/GaN metal-insulator-semiconductor heterostructure field-effect transistor with an in-situ AlN cap layer

K. H. Lee, P. C. Chang, S. J. Chang

Appl. Phys. Lett. 99, 153505 (2011)

https://doi.org/10.1063/1.3651495

Published: October 2011

View articletitled, AlGaN/GaN metal-insulator-semiconductor heterostructure field-effect transistor with an in-situ AlN cap layer

Journal Articles

AlGaN/GaN high electron mobility transistors based on InGaN/GaN multiquantum-well structures

K. H. Lee, P. C. Chang, S. J. Chang, Y. K. Su, C. L. Yu

Appl. Phys. Lett. 96, 212105 (2010)

https://doi.org/10.1063/1.3421392

Published: May 2010

View articletitled, AlGaN/GaN high electron mobility transistors based on InGaN/GaN multiquantum-well structures

Journal Articles

ZnCdSe nanowires grown by molecular beam epitaxy

B. W. Lan, C. H. Hsiao, S. C. Hung, S. J. Chang, S. J. Young, Y. C. Cheng, S. H. Chih, B. R. Huang

J. Vac. Sci. Technol. B 28, 613–616 (2010)

https://doi.org/10.1116/1.3431087

Published: May 2010

View articletitled, ZnCdSe nanowires grown by molecular beam epitaxy

Journal Articles

High quality GaN-based Schottky barrier diodes

K. H. Lee, S. J. Chang, P. C. Chang, Y. C. Wang, C. H. Kuo

Appl. Phys. Lett. 93, 132110 (2008)

https://doi.org/10.1063/1.2993353

Published: September 2008

View articletitled, High quality GaN-based Schottky barrier diodes

Journal Articles

High responsivity of GaN p - i - n photodiode by using low-temperature interlayer

J. C. Lin, Y. K. Su, S. J. Chang, W. H. Lan, K. C. Huang, W. R. Chen, C. Y. Huang, W. C. Lai, W. J. Lin, Y. C. Cheng

Appl. Phys. Lett. 91, 173502 (2007)

https://doi.org/10.1063/1.2800813

Published: October 2007

View articletitled, High responsivity of GaN p - i - n photodiode by using low-temperature interlayer

Journal Articles

Gallium nitride metal-semiconductor-metal photodetectors prepared on silicon substrates

R. W. Chuang, S. P. Chang, S. J. Chang, Y. Z. Chiou, C. Y. Lu, T. K. Lin, Y. C. Lin, C. F. Kuo, H. M. Chang

J. Appl. Phys. 102, 073110 (2007)

https://doi.org/10.1063/1.2786111

Published: October 2007

View articletitled, Gallium nitride metal-semiconductor-metal photodetectors prepared on silicon substrates

Journal Articles

GaN Schottky barrier photodetectors with Si N ∕ Ga N nucleation layer

Y. D. Jhou, S. J. Chang, Y. K. Su, Y. Y. Lee, C. H. Liu, H. C. Lee

Appl. Phys. Lett. 91, 103506 (2007)

https://doi.org/10.1063/1.2779854

Published: September 2007

View articletitled, GaN Schottky barrier photodetectors with Si N ∕ Ga N nucleation layer

Journal Articles

Nitride-based light emitting diodes with indium tin oxide electrode patterned by imprint lithography

S. J. Chang, C. F. Shen, W. S. Chen, C. T. Kuo, T. K. Ko, S. C. Shei, J. K. Sheu

Appl. Phys. Lett. 91, 013504 (2007)

https://doi.org/10.1063/1.2753726

Published: July 2007

View articletitled, Nitride-based light emitting diodes with indium tin oxide electrode patterned by imprint lithography

Journal Articles

Passivation effect on the liquid crystal alignment on a - C : H films: A two-step treatment by argon and hydrogen plasma beam scanning

K. Y. Wu, S. J. Chang, J. Hwang, C.-Y. Lee, H.-C. Tang, C.-W. Chen, C. H. Liu, H. K. Wei, C. S. Kou, C.-D. Lee

J. Appl. Phys. 101, 023531 (2007)

https://doi.org/10.1063/1.2432044

Published: January 2007

View articletitled, Passivation effect on the liquid crystal alignment on a - C : H films: A two-step treatment by argon and hydrogen plasma beam scanning

Journal Articles

Ni ∕ Au contacts on homoepitaxial p - Zn Se with surface oxygen plasma treatments

T. K. Lin, K. T. Lam, S. J. Chang, Y. Z. Chiou, S. P. Chang

J. Vac. Sci. Technol. B 25, 213–216 (2007)

https://doi.org/10.1116/1.2433974

Published: January 2007

View articletitled, Ni ∕ Au contacts on homoepitaxial p - Zn Se with surface oxygen plasma treatments

Journal Articles

Nitride-based ultraviolet metal-semiconductor-metal photodetectors with low-temperature GaN cap layers and Ir ∕ Pt contact electrodes

S. J. Chang, C. L. Yu, C. H. Chen, P. C. Chang, K. C. Huang

J. Vac. Sci. Technol. A 24, 637–640 (2006)

https://doi.org/10.1116/1.2162560

Published: May 2006

View articletitled, Nitride-based ultraviolet metal-semiconductor-metal photodetectors with low-temperature GaN cap layers and Ir ∕ Pt contact electrodes

Journal Articles

Ultra small self-organized nitride nanotips

L. W. Ji, T. H. Fang, S. C. Hung, Y. K. Su, S. J. Chang, R. W. Chuang

J. Vac. Sci. Technol. B 23, 2496–2498 (2005)

https://doi.org/10.1116/1.2131083

Published: November 2005

View articletitled, Ultra small self-organized nitride nanotips

Journal Articles

Magnesium/nitrogen and beryllium/nitrogen coimplantation into GaN

K. T. Liu, Y. K. Su, S. J. Chang, Y. Horikoshi

J. Appl. Phys. 98, 073702 (2005)

https://doi.org/10.1063/1.2073969

Published: October 2005

View articletitled, Magnesium/nitrogen and beryllium/nitrogen coimplantation into GaN

Journal Articles

Presence of nanosize Au dots on the formation of ohmic contact for the Ni–Au base film to p -GaN

Jiin-Long Yang, J. S. Chen, S. J. Chang

J. Vac. Sci. Technol. B 23, 2127–2131 (2005)

https://doi.org/10.1116/1.2041651

Published: September 2005

View articletitled, Presence of nanosize Au dots on the formation of ohmic contact for the Ni–Au base film to p -GaN

Journal Articles

Studies of InGaN ∕ GaN multiquantum-well green-light-emitting diodes grown by metalorganic chemical vapor deposition

K. S. Ramaiah, Y. K. Su, S. J. Chang, C. H. Chen, F. S. Juang, H. P. Liu, I. G. Chen

Appl. Phys. Lett. 85, 401–403 (2004)

https://doi.org/10.1063/1.1773371

Published: July 2004

View articletitled, Studies of InGaN ∕ GaN multiquantum-well green-light-emitting diodes grown by metalorganic chemical vapor deposition

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Amorphous InGaZnO ultraviolet phototransistors with double-stack Ga₂O₃/SiO₂ dielectric

High responsivity of amorphous indium gallium zinc oxide phototransistor with Ta₂O₅ gate dielectric

Effects of Oxygen Contents in the Active Channel Layer on Electrical Characteristics of IGZO‐Based Thin Film Transistors

High‐Performance a‐IGZO Thin‐Film Transistor with Organic Polymer Dielectric Layer

InGaN metal-semiconductor-metal photodetectors with triethylgallium precursor and unactivated Mg-doped GaN cap layers

AlGaN/GaN metal-insulator-semiconductor heterostructure field-effect transistor with an in-situ AlN cap layer

AlGaN/GaN high electron mobility transistors based on InGaN/GaN multiquantum-well structures

ZnCdSe nanowires grown by molecular beam epitaxy

High quality GaN-based Schottky barrier diodes

High responsivity of GaN p - i - n photodiode by using low-temperature interlayer

Gallium nitride metal-semiconductor-metal photodetectors prepared on silicon substrates

GaN Schottky barrier photodetectors with Si N ∕ Ga N nucleation layer

Nitride-based light emitting diodes with indium tin oxide electrode patterned by imprint lithography

Passivation effect on the liquid crystal alignment on a - C : H films: A two-step treatment by argon and hydrogen plasma beam scanning

Ni ∕ Au contacts on homoepitaxial p - Zn Se with surface oxygen plasma treatments

Nitride-based ultraviolet metal-semiconductor-metal photodetectors with low-temperature GaN cap layers and Ir ∕ Pt contact electrodes

Ultra small self-organized nitride nanotips

Magnesium/nitrogen and beryllium/nitrogen coimplantation into GaN

Presence of nanosize Au dots on the formation of ohmic contact for the Ni–Au base film to p -GaN

Studies of InGaN ∕ GaN multiquantum-well green-light-emitting diodes grown by metalorganic chemical vapor deposition

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