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Journal Articles

Triple-top-gate technique for studying the strongly interacting 2D electron systems in heterostructures

M. Yu. Melnikov, A. A. Shashkin, S.-H. Huang, C. W. Liu, S. V. Kravchenko
Journal: Applied Physics Letters
Appl. Phys. Lett. 125, 153102 (2024)
https://doi.org/10.1063/5.0233154
Published: October 2024
View article titled, Triple-top-gate technique for studying the strongly interacting 2D electron systems in heterostructures
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Journal Articles

Development of an atomic spectra research platform based on a 30-keV electron beam ion trap

H. J. Ji, H. M. Zhang, B. Lyu, Y. Yang, B. Bin, C. Bae, Z. C. Lin, C. Zeng, S. H. Huang, Y. C. Shen, X. H. Yin, S. Y. Dai
Journal: Review of Scientific Instruments
Rev. Sci. Instrum. 95, 083557 (2024)
https://doi.org/10.1063/5.0214916
Published: August 2024
View article titled, Development of an atomic spectra research platform based on a 30-keV electron beam ion trap
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Journal Articles

High-temperature photon-type ultra-broadband detectors based on ratchet structure

X. H. Li, S. H. Huang, Q. Yu, X. Yuan, Y. Liu, P. Bai, W. J. Song, H. Z. Bai, G. Y. Xu, W. Z. Shen, Y. H. Zhang
Journal: Applied Physics Letters
Appl. Phys. Lett. 123, 061112 (2023)
https://doi.org/10.1063/5.0153025
Published: August 2023
View article titled, High-temperature photon-type ultra-broadband detectors based on ratchet structure
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Journal Articles

Ultra-broadband frequency up-converter based on AlGaAs\GaAs heterojunction detector

X. H. Li, S. H. Huang, H. Z. Bai, P. Bai, X. R. Lian, W. J. Song, W. Z. Shen, G. Y. Xu, Y. H. Zhang
Journal: Applied Physics Letters
Appl. Phys. Lett. 121, 051106 (2022)
https://doi.org/10.1063/5.0098086
Published: August 2022
View article titled, Ultra-broadband frequency up-converter based on AlGaAs\GaAs heterojunction detector
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Journal Articles

Density dependence of the excitation gaps in an undoped Si/SiGe double-quantum-well heterostructure

D. Chen, S. Cai, N.-W. Hsu, S.-H. Huang, Y. Chuang, E. Nielsen, J.-Y. Li, C. W. Liu, T. M. Lu, D. Laroche
Journal: Applied Physics Letters
Appl. Phys. Lett. 119, 223103 (2021)
https://doi.org/10.1063/5.0068538
Published: November 2021
View article titled, Density dependence of the excitation gaps in an undoped Si/SiGe double-quantum-well heterostructure
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Includes: Supplementary data
Journal Articles

Fabrication and field emission characteristics of surface-conduction electron-emission with ZnO nanorods based on planar-gate

J. Y. Lin, X. L. He, S. H. Huang
Journal: AIP Advances
AIP Advances 9, 105004 (2019)
https://doi.org/10.1063/1.5113918
Published: October 2019
View article titled, Fabrication and field emission characteristics of surface-conduction electron-emission with ZnO nanorods based on planar-gate
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Journal Articles

Fe2O3 nanowires for thermoelectric nitrogen dioxide gas sensor

J. Y. Lin, A. J. Zhang, S. H. Huang
Journal: AIP Advances
AIP Advances 8, 125111 (2018)
https://doi.org/10.1063/1.5066026
Published: December 2018
View article titled, Fe<sub>2</sub>O<sub>3</sub> nanowires for thermoelectric nitrogen dioxide gas sensor
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Journal Articles

Unusual anisotropy of inplane field magnetoresistance in ultra-high mobility SiGe/Si/SiGe quantum wells

M. Yu. Melnikov, V. T. Dolgopolov, A. A. Shashkin, S.-H. Huang, C. W. Liu, S. V. Kravchenko
Journal: Journal of Applied Physics
J. Appl. Phys. 122, 224301 (2017)
https://doi.org/10.1063/1.4991545
Published: December 2017
View article titled, Unusual anisotropy of inplane field magnetoresistance in ultra-high mobility SiGe/Si/SiGe quantum wells
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Journal Articles

Effective g factor of low-density two-dimensional holes in a Ge quantum well

T. M. Lu, C. T. Harris, S.-H. Huang, Y. Chuang, J.-Y. Li, C. W. Liu
Journal: Applied Physics Letters
Appl. Phys. Lett. 111, 102108 (2017)
https://doi.org/10.1063/1.4990569
Published: September 2017
View article titled, Effective g factor of low-density two-dimensional holes in a Ge quantum well
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Journal Articles

Magneto-transport analysis of an ultra-low-density two-dimensional hole gas in an undoped strained Ge/SiGe heterostructure

D. Laroche, S.-H. Huang, Y. Chuang, J.-Y. Li, C. W. Liu, T. M. Lu
Journal: Applied Physics Letters
Appl. Phys. Lett. 108, 233504 (2016)
https://doi.org/10.1063/1.4953399
Published: June 2016
View article titled, Magneto-transport analysis of an ultra-low-density two-dimensional hole gas in an undoped strained Ge/SiGe heterostructure
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Journal Articles

Sn-based Ge/Ge0.975Sn0.025/Ge p-i-n photodetector operated with back-side illumination

C. Chang, H. Li, S. H. Huang, H. H. Cheng, G. Sun, R. A. Soref
Journal: Applied Physics Letters
Appl. Phys. Lett. 108, 151101 (2016)
https://doi.org/10.1063/1.4945816
Published: April 2016
View article titled, Sn-based Ge/Ge<sub>0.975</sub>Sn<sub>0.025</sub>/Ge p-i-n photodetector operated with back-side illumination
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Journal Articles

Scattering mechanisms in shallow undoped Si/SiGe quantum wells

D. Laroche, S.-H. Huang, E. Nielsen, Y. Chuang, J.-Y. Li, C. W. Liu, T. M. Lu
Journal: AIP Advances
AIP Advances 5, 107106 (2015)
https://doi.org/10.1063/1.4933026
Published: October 2015
View article titled, Scattering mechanisms in shallow undoped Si/SiGe quantum wells
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Journal Articles

Magneto-transport of an electron bilayer system in an undoped Si/SiGe double-quantum-well heterostructure

D. Laroche, S.-H. Huang, E. Nielsen, C. W. Liu, J.-Y. Li, T. M. Lu
Journal: Applied Physics Letters
Appl. Phys. Lett. 106, 143503 (2015)
https://doi.org/10.1063/1.4917296
Published: April 2015
View article titled, Magneto-transport of an electron bilayer system in an undoped Si/SiGe double-quantum-well heterostructure
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Journal Articles

Ultra-high mobility two-dimensional electron gas in a SiGe/Si/SiGe quantum well

M. Yu. Melnikov, A. A. Shashkin, V. T. Dolgopolov, S.-H. Huang, C. W. Liu, S. V. Kravchenko
Journal: Applied Physics Letters
Appl. Phys. Lett. 106, 092102 (2015)
https://doi.org/10.1063/1.4914007
Published: March 2015
View article titled, Ultra-high mobility two-dimensional electron gas in a SiGe/Si/SiGe quantum well
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Journal Articles

Enhance the coercivity of the rhombohedral lattice L11 CoPt thin film on glass substrate

An-Cheng Sun, Chuan-Fa Huang, S. H. Huang
Journal: Journal of Applied Physics
Series: Magnetism and Magnetic Materials
J. Appl. Phys. 115, 17B720 (2014)
https://doi.org/10.1063/1.4864739
Published: February 2014
View article titled, Enhance the coercivity of the rhombohedral lattice <em>L</em>1<sub>1</sub> CoPt thin film on glass substrate
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Journal Articles

Diluted magnetism in Mn-doped SrZnO2 single crystals

M. R. Rahman, B. Koteswararao, S. H. Huang, Kee Hoon Kim, F. C. Chou
Journal: Journal of Applied Physics
J. Appl. Phys. 114, 123903 (2013)
https://doi.org/10.1063/1.4821958
Published: September 2013
View article titled, Diluted magnetism in Mn-doped SrZnO<sub>2</sub> single crystals
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Journal Articles

Multipath correlations in underwater acoustic communication channels

S. H. Huang, T. C. Yang, Chen-Fen Huang
Journal: The Journal of the Acoustical Society of America
J. Acoust. Soc. Am. 133, 2180–2190 (2013)
https://doi.org/10.1121/1.4792151
Published: April 2013
View article titled, Multipath correlations in underwater acoustic communication channels
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Journal Articles

Mobility enhancement of strained Si by optimized SiGe/Si/SiGe structures

S.-H. Huang, T.-M. Lu, S.-C. Lu, C.-H. Lee, C. W. Liu, D. C. Tsui
Journal: Applied Physics Letters
Appl. Phys. Lett. 101, 042111 (2012)
https://doi.org/10.1063/1.4739513
Published: July 2012
View article titled, Mobility enhancement of strained Si by optimized SiGe/Si/SiGe structures
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Journal Articles

Ge out diffusion effect on SiGe nanoring formation

W.-H. Tu, S.-H. Huang, C. W. Liu
Journal: Journal of Applied Physics
J. Appl. Phys. 111, 076103 (2012)
https://doi.org/10.1063/1.3702812
Published: April 2012
View article titled, Ge out diffusion effect on SiGe nanoring formation
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Journal Articles

Upper limit of two-dimensional electron density in enhancement-mode Si/SiGe heterostructure field-effect transistors

T. M. Lu, C.-H. Lee, S.-H. Huang, D. C. Tsui, C. W. Liu
Journal: Applied Physics Letters
Appl. Phys. Lett. 99, 153510 (2011)
https://doi.org/10.1063/1.3652909
Published: October 2011
View article titled, Upper limit of two-dimensional electron density in enhancement-mode Si/SiGe heterostructure field-effect transistors
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