Page 1 | Search Results | AIP Publishing

1-20 of 31

Sort by

Sort Order Select

Journal Articles

Photovoltaic infrared detection with p-type graded barrier heterostructures

P. K. D. D. P. Pitigala, S. G. Matsik, A. G. U. Perera, S. P. Khanna, L. H. Li, E. H. Linfield, Z. R. Wasilewski, M. Buchanan, H. C. Liu

J. Appl. Phys. 111, 084505 (2012)

https://doi.org/10.1063/1.4704695

Published: April 2012

View article titled, Photovoltaic infrared detection with p-type graded barrier heterostructures

Journal Articles

Five-band bias-selectable integrated quantum well detector in an n - p - n architecture

G. Ariyawansa, Y. Aytac, A. G. U. Perera, S. G. Matsik, M. Buchanan, Z. R. Wasilewski, H. C. Liu

Appl. Phys. Lett. 97, 231102 (2010)

https://doi.org/10.1063/1.3524236

Published: December 2010

View article titled, Five-band bias-selectable integrated quantum well detector in an n - p - n architecture

Journal Articles

Device modeling for split-off band detectors

S. G. Matsik, P. V. V. Jayaweera, A. G. U. Perera, K. K. Choi, P. Wijewarnasuriya

J. Appl. Phys. 106, 064503 (2009)

https://doi.org/10.1063/1.3224873

Published: September 2009

View article titled, Device modeling for split-off band detectors

Journal Articles

Negative capacitance in Ga N ∕ Al Ga N heterojunction dual-band detectors

L. E. Byrum, G. Ariyawansa, R. C. Jayasinghe, N. Dietz, A. G. U. Perera, S. G. Matsik, I. T. Ferguson, A. Bezinger, H. C. Liu

J. Appl. Phys. 106, 053701 (2009)

https://doi.org/10.1063/1.3211292

Published: September 2009

View article titled, Negative capacitance in Ga N ∕ Al Ga N heterojunction dual-band detectors

Journal Articles

Effect of emitter thickness on the spectral shape of heterojunction interfacial workfunction internal photoemission detectors

S. G. Matsik, R. C. Jayasinghe, A. B. Weerasekara, A. G. U. Perera, E. H. Linfield, S. P. Khanna, M. Lachab, H. C. Liu

J. Appl. Phys. 106, 014509 (2009)

https://doi.org/10.1063/1.3153954

Published: July 2009

View article titled, Effect of emitter thickness on the spectral shape of heterojunction interfacial workfunction internal photoemission detectors

Journal Articles

Capacitance hysteresis in GaN/AlGaN heterostructures

L. E. Byrum, G. Ariyawansa, R. C. Jayasinghe, N. Dietz, A. G. U. Perera, S. G. Matsik, I. T. Ferguson, A. Bezinger, H. C. Liu

J. Appl. Phys. 105, 023709 (2009)

https://doi.org/10.1063/1.3068179

Published: January 2009

View article titled, Capacitance hysteresis in GaN/AlGaN heterostructures

Journal Articles

Self-consistent performance modeling for dualband detectors

S. G. Matsik, A. G. U. Perera

J. Appl. Phys. 104, 044502 (2008)

https://doi.org/10.1063/1.2967714

Published: August 2008

View article titled, Self-consistent performance modeling for dualband detectors

Journal Articles

Uncooled infrared detectors for 3 – 5 μ m and beyond

P. V. V. Jayaweera, S. G. Matsik, A. G. U. Perera, H. C. Liu, M. Buchanan, Z. R. Wasilewski

Appl. Phys. Lett. 93, 021105 (2008)

https://doi.org/10.1063/1.2959060

Published: July 2008

View article titled, Uncooled infrared detectors for 3 – 5 μ m and beyond

Journal Articles

Bias-selectable tricolor tunneling quantum dot infrared photodetector for atmospheric windows

G. Ariyawansa, V. Apalkov, A. G. U. Perera, S. G. Matsik, G. Huang, P. Bhattacharya

Appl. Phys. Lett. 92, 111104 (2008)

https://doi.org/10.1063/1.2898521

Published: March 2008

View article titled, Bias-selectable tricolor tunneling quantum dot infrared photodetector for atmospheric windows

Journal Articles

GaSb homojunctions for far-infrared (terahertz) detection

P. V. V. Jayaweera, S. G. Matsik, A. G. U. Perera, Y. Paltiel, Ariel Sher, Arie Raizman, H. Luo, H. C. Liu

Appl. Phys. Lett. 90, 111109 (2007)

https://doi.org/10.1063/1.2713760

Published: March 2007

View article titled, GaSb homojunctions for far-infrared (terahertz) detection

Journal Articles

Ga N ∕ Al Ga N heterojunction infrared detector responding in 8–14 and 20 – 70 μ m ranges

G. Ariyawansa, M. B. M. Rinzan, M. Strassburg, N. Dietz, A. G. U. Perera, S. G. Matsik, A. Asghar, I. T. Ferguson, H. Luo, H. C. Liu

Appl. Phys. Lett. 89, 141122 (2006)

https://doi.org/10.1063/1.2360205

Published: October 2006

View article titled, Ga N ∕ Al Ga N heterojunction infrared detector responding in 8–14 and 20 – 70 μ m ranges

Journal Articles

High operating temperature split-off band infrared detectors

A. G. U. Perera, S. G. Matsik, P. V. V. Jayaweera, K. Tennakone, H. C. Liu, M. Buchanan, G. Von Winckel, A. Stintz, S. Krishna

Appl. Phys. Lett. 89, 131118 (2006)

https://doi.org/10.1063/1.2358106

Published: September 2006

View article titled, High operating temperature split-off band infrared detectors

Journal Articles

Ga N ∕ Al Ga N ultraviolet/infrared dual-band detector

G. Ariyawansa, M. B. M. Rinzan, M. Alevli, M. Strassburg, N. Dietz, A. G. U. Perera, S. G. Matsik, A. Asghar, I. T. Ferguson, H. Luo, A. Bezinger, H. C. Liu

Appl. Phys. Lett. 89, 091113 (2006)

https://doi.org/10.1063/1.2345226

Published: August 2006

View article titled, Ga N ∕ Al Ga N ultraviolet/infrared dual-band detector

Journal Articles

Characteristics of a Si dual-band detector responding in both near- and very-long-wavelength-infrared regions

G. Ariyawansa, M. B. M. Rinzan, S. G. Matsik, G. Hastings, A. G. U. Perera, H. C. Liu, M. Buchanan, G. I. Sproule, V. I. Gavrilenko, V. P. Kuznetsov

Appl. Phys. Lett. 89, 061112 (2006)

https://doi.org/10.1063/1.2336202

Published: August 2006

View article titled, Characteristics of a Si dual-band detector responding in both near- and very-long-wavelength-infrared regions

Journal Articles

Optical characterizations of heavily doped p -type Al x Ga 1 − x As and GaAs epitaxial films at terahertz frequencies

Z. G. Hu, M. B. M. Rinzan, S. G. Matsik, A. G. U. Perera, G. Von Winckel, A. Stintz, S. Krishna

J. Appl. Phys. 97, 093529 (2005)

https://doi.org/10.1063/1.1894581

Published: April 2005

View article titled, Optical characterizations of heavily doped p -type Al x Ga 1 − x As and GaAs epitaxial films at terahertz frequencies

Journal Articles

Near- and far-infrared p ‐ Ga As dual-band detector

G. Ariyawansa, M. B. M. Rinzan, D. G. Esaev, S. G. Matsik, G. Hastings, A. G. U. Perera, H. C. Liu, B. N. Zvonkov, V. I. Gavrilenko

Appl. Phys. Lett. 86, 143510 (2005)

https://doi.org/10.1063/1.1899242

Published: April 2005

View article titled, Near- and far-infrared p ‐ Ga As dual-band detector

Journal Articles

AlGaAs emitter ∕ GaAs barrier terahertz detector with a 2.3 THz threshold

M. B. M. Rinzan, A. G. U. Perera, S. G. Matsik, H. C. Liu, Z. R. Wasilewski, M. Buchanan

Appl. Phys. Lett. 86, 071112 (2005)

https://doi.org/10.1063/1.1867561

Published: February 2005

View article titled, AlGaAs emitter ∕ GaAs barrier terahertz detector with a 2.3 THz threshold

Journal Articles

Free carrier absorption in Be-doped epitaxial AlGaAs thin films

M. B. M. Rinzan, D. G. Esaev, A. G. U. Perera, S. G. Matsik, G. Von Winckel, A. Stintz, S. Krishna

Appl. Phys. Lett. 85, 5236–5238 (2004)

https://doi.org/10.1063/1.1829383

Published: November 2004

View article titled, Free carrier absorption in Be-doped epitaxial AlGaAs thin films

Journal Articles

Design and optimization of Ga As ∕ Al Ga As heterojunction infrared detectors

D. G. Esaev, M. B. M. Rinzan, S. G. Matsik, A. G. U. Perera

J. Appl. Phys. 96, 4588–4597 (2004)

https://doi.org/10.1063/1.1786342

Published: October 2004

View article titled, Design and optimization of Ga As ∕ Al Ga As heterojunction infrared detectors

Journal Articles

20 μm cutoff heterojunction interfacial work function internal photoemission detectors

S. G. Matsik, M. B. M. Rinzan, D. G. Esaev, A. G. U. Perera, H. C. Liu, M. Buchanan

Appl. Phys. Lett. 84, 3435–3437 (2004)

https://doi.org/10.1063/1.1634386

Published: May 2004

View article titled, 20 μm cutoff heterojunction interfacial work function internal photoemission detectors

NARROW

Topics

Photovoltaic infrared detection with p-type graded barrier heterostructures

Five-band bias-selectable integrated quantum well detector in an n - p - n architecture

Device modeling for split-off band detectors

Negative capacitance in Ga N ∕ Al Ga N heterojunction dual-band detectors

Effect of emitter thickness on the spectral shape of heterojunction interfacial workfunction internal photoemission detectors

Capacitance hysteresis in GaN/AlGaN heterostructures

Self-consistent performance modeling for dualband detectors

Uncooled infrared detectors for 3 – 5 μ m and beyond

Bias-selectable tricolor tunneling quantum dot infrared photodetector for atmospheric windows

GaSb homojunctions for far-infrared (terahertz) detection

Ga N ∕ Al Ga N heterojunction infrared detector responding in 8–14 and 20 – 70 μ m ranges

High operating temperature split-off band infrared detectors

Ga N ∕ Al Ga N ultraviolet/infrared dual-band detector

Characteristics of a Si dual-band detector responding in both near- and very-long-wavelength-infrared regions

Optical characterizations of heavily doped p -type Al x Ga 1 − x As and GaAs epitaxial films at terahertz frequencies

Near- and far-infrared p ‐ Ga As dual-band detector

AlGaAs emitter ∕ GaAs barrier terahertz detector with a 2.3 THz threshold

Free carrier absorption in Be-doped epitaxial AlGaAs thin films

Design and optimization of Ga As ∕ Al Ga As heterojunction infrared detectors

20 μm cutoff heterojunction interfacial work function internal photoemission detectors

Resources

Explore

pubs.aip.org

Connect with AIP Publishing

Resources

Explore

pubs.aip.org

Connect with AIP Publishing

This Feature Is Available To Subscribers Only