Page 1 | Search Results | AIP Publishing

1-19 of 19

Sort by

Sort Order Select

Journal Articles

Generation of electron vortex beams with over 1000 orbital angular momentum quanta using a tunable electrostatic spiral phase plate

A. H. Tavabi, P. Rosi, A. Roncaglia, E. Rotunno, M. Beleggia, P.-H. Lu, L. Belsito, G. Pozzi, S. Frabboni, P. Tiemeijer, R. E. Dunin-Borkowski, V. Grillo

Appl. Phys. Lett. 121, 073506 (2022)

https://doi.org/10.1063/5.0093411

Published: August 2022

View article titled, Generation of electron vortex beams with over 1000 orbital angular momentum quanta using a tunable electrostatic spiral phase plate

Journal Articles

Realization of electron vortices with large orbital angular momentum using miniature holograms fabricated by electron beam lithography

E. Mafakheri, A. H. Tavabi, P.-H. Lu, R. Balboni, F. Venturi, C. Menozzi, G. C. Gazzadi, S. Frabboni, A. Sit, R. E. Dunin-Borkowski, E. Karimi, V. Grillo

Appl. Phys. Lett. 110, 093113 (2017)

https://doi.org/10.1063/1.4977879

Published: March 2017

View article titled, Realization of electron vortices with large orbital angular momentum using miniature holograms fabricated by electron beam lithography

Includes: Supplementary data

Journal Articles

Fabrication of FeSi and Fe₃Si compounds by electron beam induced mixing of [Fe/Si]₂ and [Fe₃/Si]₂ multilayers grown by focused electron beam induced deposition

F. Porrati, R. Sachser, G. C. Gazzadi, S. Frabboni, M. Huth

J. Appl. Phys. 119, 234306 (2016)

https://doi.org/10.1063/1.4954067

Published: June 2016

View article titled, Fabrication of FeSi and Fe3Si compounds by electron beam induced mixing of [Fe/Si]2 and [Fe3/Si]2 multilayers grown by focused electron beam induced deposition

Journal Articles

Convergent beam electron-diffraction investigation of lattice mismatch and static disorder in GaAs/GaAs_1−xN_x intercalated GaAs/GaAs_1−xN_x:H heterostructures

S. Frabboni, V. Grillo, G. C. Gazzadi, R. Balboni, R. Trotta, A. Polimeni, M. Capizzi, F. Martelli, S. Rubini, G. Guzzinati, F. Glas

Appl. Phys. Lett. 101, 111912 (2012)

https://doi.org/10.1063/1.4752464

Published: September 2012

View article titled, Convergent beam electron-diffraction investigation of lattice mismatch and static disorder in GaAs/GaAs1−xNx intercalated GaAs/GaAs1−xNx:H heterostructures

Journal Articles

Electron diffraction with ten nanometer beam size for strain analysis of nanodevices

A. Armigliato, S. Frabboni, G. C. Gazzadi

Appl. Phys. Lett. 93, 161906 (2008)

https://doi.org/10.1063/1.3003581

Published: October 2008

View article titled, Electron diffraction with ten nanometer beam size for strain analysis of nanodevices

Journal Articles

Young’s double-slit interference experiment with electrons

S. Frabboni, G. C. Gazzadi, G. Pozzi

Am. J. Phys. 75, 1053–1055 (2007)

https://doi.org/10.1119/1.2757621

Published: November 2007

View article titled, Young’s double-slit interference experiment with electrons

Journal Articles

Structural properties of reactively sputtered W–Si–N thin films

A. Vomiero, E. Boscolo Marchi, A. Quaranta, G. Della Mea, R. S. Brusa, G. Mariotto, L. Felisari, S. Frabboni, R. Tonini, G. Ottaviani, G. Mattei, A. Scandurra, O. Puglisi

J. Appl. Phys. 102, 033505 (2007)

https://doi.org/10.1063/1.2761828

Published: August 2007

View article titled, Structural properties of reactively sputtered W–Si–N thin films

Journal Articles

Electrical characterization and Auger depth profiling of nanogap electrodes fabricated by I 2 -assisted focused ion beam

G. C. Gazzadi, E. Angeli, P. Facci, S. Frabboni

Appl. Phys. Lett. 89, 173112 (2006)

https://doi.org/10.1063/1.2364833

Published: October 2006

View article titled, Electrical characterization and Auger depth profiling of nanogap electrodes fabricated by I 2 -assisted focused ion beam

Journal Articles

Transmission electron microscopy characterization and sculpting of sub- 1 nm Si–O–C freestanding nanowires grown by electron beam induced deposition

S. Frabboni, G. C. Gazzadi, A. Spessot

Appl. Phys. Lett. 89, 113108 (2006)

https://doi.org/10.1063/1.2352723

Published: September 2006

View article titled, Transmission electron microscopy characterization and sculpting of sub- 1 nm Si–O–C freestanding nanowires grown by electron beam induced deposition

Journal Articles

Fabrication by electron beam induced deposition and transmission electron microscopic characterization of sub- 10 - nm freestanding Pt nanowires

S. Frabboni, G. C. Gazzadi, L. Felisari, A. Spessot

Appl. Phys. Lett. 88, 213116 (2006)

https://doi.org/10.1063/1.2206996

Published: May 2006

View article titled, Fabrication by electron beam induced deposition and transmission electron microscopic characterization of sub- 10 - nm freestanding Pt nanowires

Journal Articles

nlinImproving spatial resolution of convergent beam electron diffraction strain mapping in silicon microstructures

A. Armigliato, R. Balboni, S. Frabboni

Appl. Phys. Lett. 86, 063508 (2005)

https://doi.org/10.1063/1.1855408

Published: February 2005

View article titled, nlinImproving spatial resolution of convergent beam electron diffraction strain mapping in silicon microstructures

Journal Articles

Transmission electron microscopy study of blisters in high-temperature annealed He and H co-implanted single-crystal silicon

S. Frabboni, G. C. Gazzadi, L. Felisari, R. Tonini, F. Corni, G. Ottaviani

Appl. Phys. Lett. 85, 1683–1685 (2004)

https://doi.org/10.1063/1.1790031

Published: September 2004

View article titled, Transmission electron microscopy study of blisters in high-temperature annealed He and H co-implanted single-crystal silicon

Journal Articles

Application of convergent beam electron diffraction to two-dimensional strain mapping in silicon devices

A. Armigliato, R. Balboni, G. P. Carnevale, G. Pavia, D. Piccolo, S. Frabboni, A. Benedetti, A. G. Cullis

Appl. Phys. Lett. 82, 2172–2174 (2003)

https://doi.org/10.1063/1.1565181

Published: March 2003

View article titled, Application of convergent beam electron diffraction to two-dimensional strain mapping in silicon devices

Journal Articles

Helium-implanted silicon: A study of bubble precursors

F. Corni, G. Calzolari, S. Frabboni, C. Nobili, G. Ottaviani, R. Tonini, G. F. Cerofolini, D. Leone, M. Servidori, R. S. Brusa, G. P. Karwasz, N. Tiengo, A. Zecca

J. Appl. Phys. 85, 1401–1408 (1999)

https://doi.org/10.1063/1.369335

Published: February 1999

View article titled, Helium-implanted silicon: A study of bubble precursors

Journal Articles

High-dose helium-implanted single-crystal silicon: Annealing behavior

R. Tonini, F. Corni, S. Frabboni, G. Ottaviani, G. F. Cerofolini

J. Appl. Phys. 84, 4802–4808 (1998)

https://doi.org/10.1063/1.368803

Published: November 1998

View article titled, High-dose helium-implanted single-crystal silicon: Annealing behavior

Journal Articles

Growth kinetics of a displacement field in hydrogen implanted single crystalline silicon

D. Bisero, F. Corni, S. Frabboni, R. Tonini, G. Ottaviani, R. Balboni

J. Appl. Phys. 83, 4106–4110 (1998)

https://doi.org/10.1063/1.367165

Published: April 1998

View article titled, Growth kinetics of a displacement field in hydrogen implanted single crystalline silicon

Journal Articles

Bulk mismatch values of heterostructures as determined from convergent beam electron diffraction on thin cross sections

R. Balboni, A. Armigliato, S. Frabboni

Appl. Phys. Lett. 68, 2831–2833 (1996)

https://doi.org/10.1063/1.116339

Published: May 1996

View article titled, Bulk mismatch values of heterostructures as determined from convergent beam electron diffraction on thin cross sections

Journal Articles

Stress and interface morphology contributions in the crystallization kinetics of a Ge_xSi_1−x thin layer on (100) Si

F. Corni, S. Frabboni, R. Tonini, G. Ottaviani, G. Queirolo

J. Appl. Phys. 79, 3528–3533 (1996)

https://doi.org/10.1063/1.361404

Published: April 1996

View article titled, Stress and interface morphology contributions in the crystallization kinetics of a GexSi1−x thin layer on (100) Si

Journal Articles

Solid‐phase epitaxial growth of Ge‐Si alloys made by ion implantation

F. Corni, S. Frabboni, G. Ottaviani, G. Queirolo, D. Bisero, C. Bresolin, R. Fabbri, M. Servidori

J. Appl. Phys. 71, 2644–2649 (1992)

https://doi.org/10.1063/1.351035

Published: March 1992

View article titled, Solid‐phase epitaxial growth of Ge‐Si alloys made by ion implantation

Update search

NARROW

Format

Topics

Subjects

Journal

Article Type

Issue Section

Date

Availability

Generation of electron vortex beams with over 1000 orbital angular momentum quanta using a tunable electrostatic spiral phase plate

Realization of electron vortices with large orbital angular momentum using miniature holograms fabricated by electron beam lithography

Fabrication of FeSi and Fe₃Si compounds by electron beam induced mixing of [Fe/Si]₂ and [Fe₃/Si]₂ multilayers grown by focused electron beam induced deposition

Convergent beam electron-diffraction investigation of lattice mismatch and static disorder in GaAs/GaAs_1−xN_x intercalated GaAs/GaAs_1−xN_x:H heterostructures

Electron diffraction with ten nanometer beam size for strain analysis of nanodevices

Young’s double-slit interference experiment with electrons

Structural properties of reactively sputtered W–Si–N thin films

Electrical characterization and Auger depth profiling of nanogap electrodes fabricated by I 2 -assisted focused ion beam

Transmission electron microscopy characterization and sculpting of sub- 1 nm Si–O–C freestanding nanowires grown by electron beam induced deposition

Fabrication by electron beam induced deposition and transmission electron microscopic characterization of sub- 10 - nm freestanding Pt nanowires

nlinImproving spatial resolution of convergent beam electron diffraction strain mapping in silicon microstructures

Transmission electron microscopy study of blisters in high-temperature annealed He and H co-implanted single-crystal silicon

Application of convergent beam electron diffraction to two-dimensional strain mapping in silicon devices

Helium-implanted silicon: A study of bubble precursors

High-dose helium-implanted single-crystal silicon: Annealing behavior

Growth kinetics of a displacement field in hydrogen implanted single crystalline silicon

Bulk mismatch values of heterostructures as determined from convergent beam electron diffraction on thin cross sections

Stress and interface morphology contributions in the crystallization kinetics of a Ge_xSi_1−x thin layer on (100) Si

Solid‐phase epitaxial growth of Ge‐Si alloys made by ion implantation

Resources

Explore

pubs.aip.org

Connect with AIP Publishing

Update search

Resources

Explore

pubs.aip.org

Connect with AIP Publishing

This Feature Is Available To Subscribers Only