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Journal Articles

Study of a 1 eV GaNAsSb photovoltaic cell grown on a silicon substrate

K. H. Tan, W. K. Loke, S. Wicaksono, D. Li, Y. R. Leong, S. F. Yoon, P. Sharma, T. Milakovich, M. T. Bulsara, E. A. Fitzgerald
Journal: Applied Physics Letters
Appl. Phys. Lett. 104, 103906 (2014)
https://doi.org/10.1063/1.4867082
Published: March 2014
View articletitled, Study of a 1 eV GaNAsSb photovoltaic cell grown on a silicon substrate
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Journal Articles

Integration of TaOx-based resistive-switching element and GaAs diode

Z. Xu, X. Tong, S. F. Yoon, Y. C. Yeo, C. K. Chia, G. K. Dalapati, D. Z. Chi
Journal: APL Materials
APL Mater. 1, 032121 (2013)
https://doi.org/10.1063/1.4820421
Published: September 2013
View articletitled, Integration of TaOx-based resistive-switching element and GaAs diode
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Journal Articles

Low temperature grown GaNAsSb: A promising material for photoconductive switch application

K. H. Tan, S. F. Yoon, S. Wicaksono, W. K. Loke, D. S. Li, N. Saadsaoud, C. Tripon-Canseliet, J. F. Lampin, D. Decoster, J. Chazelas
Journal: Applied Physics Letters
Appl. Phys. Lett. 103, 111113 (2013)
https://doi.org/10.1063/1.4820797
Published: September 2013
View articletitled, Low temperature grown GaNAsSb: A promising material for photoconductive switch application
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Journal Articles

Erratum: “Characterization of thin-film GaAs diodes grown on germanium-on-insulator on Si substrate” [J. Appl. Phys. 111 , 044504 (2012)]

Z. Xu, S. F. Yoon, Y. C. Yeo, C. K. Chia, Y. B. Cheng, G. K. Dalapati
Journal: Journal of Applied Physics
J. Appl. Phys. 114, 059902 (2013)
https://doi.org/10.1063/1.4818479
Published: August 2013
View articletitled, Erratum: “Characterization of thin-film GaAs diodes grown on germanium-on-insulator on Si substrate” [J. Appl. Phys. 111 , 044504 (2012)]
Open the PDF for Erratum: “Characterization of thin-film GaAs diodes grown on germanium-on-insulator on Si substrate” [J. Appl. Phys. 111 , 044504 (2012)] in another window
Journal Articles

Low temperature direct wafer bonding of GaAs to Si via plasma activation

C. Y. Yeo, D. W. Xu, S. F. Yoon, E. A. Fitzgerald
Journal: Applied Physics Letters
Appl. Phys. Lett. 102, 054107 (2013)
https://doi.org/10.1063/1.4791584
Published: February 2013
View articletitled, Low temperature direct wafer bonding of GaAs to Si via plasma activation
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Journal Articles

Characterization of thin-film GaAs diodes grown on germanium-on-insulator on Si substrate

Z. Xu, S. F. Yoon, Y. C. Yeo, C. K. Chia, Y. B. Cheng, G. K. Dalapati
Journal: Journal of Applied Physics
J. Appl. Phys. 111, 044504 (2012)
https://doi.org/10.1063/1.3686182
Published: February 2012
View articletitled, Characterization of thin-film GaAs diodes grown on germanium-on-insulator on Si substrate
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Journal Articles

Role of AlxGa1−xAs buffer layer in heterogeneous integration of GaAs/Ge

C. K. Chia, G. K. Dalapati, Y. Chai, S. L. Lu, W. He, J. R. Dong, D. H. L. Seng, H. K. Hui, A. S. W. Wong, A. J. Y. Lau, Y. B. Cheng, D. Z. Chi, Z. Zhu, Y. C. Yeo, Z. Xu, S. F. Yoon
Journal: Journal of Applied Physics
J. Appl. Phys. 109, 066106 (2011)
https://doi.org/10.1063/1.3561489
Published: March 2011
View articletitled, Role of AlxGa1−xAs buffer layer in heterogeneous integration of GaAs/Ge
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Journal Articles

InSb 1 − x N x / InSb / GaAs alloys by thermal annealing for midinfrared photodetection

K. P. Lim, H. T. Pham, S. F. Yoon, K. H. Tan, C. Y. Ngo
Journal: Applied Physics Letters
Appl. Phys. Lett. 97, 221112 (2010)
https://doi.org/10.1063/1.3524228
Published: December 2010
View articletitled, InSb 1 − x N x / InSb / GaAs alloys by thermal annealing for midinfrared photodetection
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Journal Articles

Microphotoluminescence investigation of InAs quantum dot active region in 1.3   μ m vertical cavity surface emitting laser structure

Y. Ding, W. J. Fan, B. S. Ma, D. W. Xu, S. F. Yoon, S. Liang, L. J. Zhao, M. Wasiak, T. Czyszanowski, W. Nakwaski
Journal: Journal of Applied Physics
J. Appl. Phys. 108, 073111 (2010)
https://doi.org/10.1063/1.3490236
Published: October 2010
View articletitled, Microphotoluminescence investigation of InAs quantum dot active region in 1.3   μ m vertical cavity surface emitting laser structure
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Journal Articles

Effect of thermal annealing on properties of InSbN grown by molecular beam epitaxy

K. P. Lim, H. T. Pham, S. F. Yoon, C. Y. Ngo, S. Tripathy
Journal: Applied Physics Letters
Appl. Phys. Lett. 96, 161903 (2010)
https://doi.org/10.1063/1.3399775
Published: April 2010
View articletitled, Effect of thermal annealing on properties of InSbN grown by molecular beam epitaxy
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Journal Articles

Self-heating effect in 1.3   μ m   p -doped InAs/GaAs quantum dot vertical cavity surface emitting lasers

D. W. Xu, C. Z. Tong, S. F. Yoon, L. J. Zhao, Y. Ding, W. J. Fan
Journal: Journal of Applied Physics
J. Appl. Phys. 107, 063107 (2010)
https://doi.org/10.1063/1.3309954
Published: March 2010
View articletitled, Self-heating effect in 1.3   μ m   p -doped InAs/GaAs quantum dot vertical cavity surface emitting lasers
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Journal Articles

Physical device modeling of carbon nanotube/GaAs photovoltaic cells

Hong Li, Wan Khai Loke, Qing Zhang, S. F. Yoon
Journal: Applied Physics Letters
Appl. Phys. Lett. 96, 043501 (2010)
https://doi.org/10.1063/1.3293452
Published: January 2010
View articletitled, Physical device modeling of carbon nanotube/GaAs photovoltaic cells
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Includes: Supplementary data
Journal Articles

Two-state competition in 1.3   μ m multilayer InAs/InGaAs quantum dot lasers

Q. Cao, S. F. Yoon, C. Z. Tong, C. Y. Ngo, C. Y. Liu, R. Wang, H. X. Zhao
Journal: Applied Physics Letters
Appl. Phys. Lett. 95, 191101 (2009)
https://doi.org/10.1063/1.3259659
Published: November 2009
View articletitled, Two-state competition in 1.3   μ m multilayer InAs/InGaAs quantum dot lasers
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Journal Articles

Optical properties of 1.3   μ m InAs/GaAs bilayer quantum dots with high areal density

C. Y. Ngo, S. F. Yoon, D. R. Lim, Vincent Wong, S. J. Chua
Journal: Applied Physics Letters
Appl. Phys. Lett. 95, 181913 (2009)
https://doi.org/10.1063/1.3262960
Published: November 2009
View articletitled, Optical properties of 1.3   μ m InAs/GaAs bilayer quantum dots with high areal density
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Journal Articles

Electroluminescence and structural characteristics of InAs / In 0.1 Ga 0.9 As quantum dots grown on graded Si 1 − x Ge x / Si substrate

H. Tanoto, S. F. Yoon, K. L. Lew, W. K. Loke, C. Dohrman, E. A. Fitzgerald, L. J. Tang
Journal: Applied Physics Letters
Appl. Phys. Lett. 95, 141905 (2009)
https://doi.org/10.1063/1.3243984
Published: October 2009
View articletitled, Electroluminescence and structural characteristics of InAs / In 0.1 Ga 0.9 As quantum dots grown on graded Si 1 − x Ge x / Si substrate
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Journal Articles

Theoretical investigation of 1.3   μ m dots-under-a-well and dots-in-a-well InAs/GaAs quantum dot vertical-cavity surface-emitting lasers

C. Z. Tong, D. W. Xu, S. F. Yoon
Journal: Journal of Applied Physics
J. Appl. Phys. 106, 033106 (2009)
https://doi.org/10.1063/1.3191660
Published: August 2009
View articletitled, Theoretical investigation of 1.3   μ m dots-under-a-well and dots-in-a-well InAs/GaAs quantum dot vertical-cavity surface-emitting lasers
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Journal Articles

Origin and suppression of V-shaped defects in the capping of self-assembled InAs quantum dots on graded Si 1 − x Ge x / Si substrate

H. Tanoto, S. F. Yoon, T. K. Ng, C. Y. Ngo, C. Dohrman, E. A. Fitzgerald, L. H. Tan, C. H. Tung
Journal: Applied Physics Letters
Appl. Phys. Lett. 95, 052111 (2009)
https://doi.org/10.1063/1.3189086
Published: August 2009
View articletitled, Origin and suppression of V-shaped defects in the capping of self-assembled InAs quantum dots on graded Si 1 − x Ge x / Si substrate
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Journal Articles

Low energy Ar + sputtering-induced GaAs quantum dot formation and evolution

Y. Wang, S. F. Yoon, C. Y. Ngo, C. Z. Tong, C. Y. Liu
Journal: Journal of Applied Physics
J. Appl. Phys. 106, 024301 (2009)
https://doi.org/10.1063/1.3172928
Published: July 2009
View articletitled, Low energy Ar + sputtering-induced GaAs quantum dot formation and evolution
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Journal Articles

Characteristics of 1.3   μ m InAs/InGaAs/GaAs quantum dot electroabsorption modulator

C. Y. Ngo, S. F. Yoon, W. K. Loke, Q. Cao, D. R. Lim, Vincent Wong, Y. K. Sim, S. J. Chua
Journal: Applied Physics Letters
Appl. Phys. Lett. 94, 143108 (2009)
https://doi.org/10.1063/1.3119186
Published: April 2009
View articletitled, Characteristics of 1.3   μ m InAs/InGaAs/GaAs quantum dot electroabsorption modulator
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Journal Articles

Near-infrared photon upconversion devices based on GaNAsSb active layer lattice matched to GaAs

Y. Yang, W. Z. Shen, H. C. Liu, S. R. Laframboise, S. Wicaksono, S. F. Yoon, K. H. Tan
Journal: Applied Physics Letters
Appl. Phys. Lett. 94, 093504 (2009)
https://doi.org/10.1063/1.3091402
Published: March 2009
View articletitled, Near-infrared photon upconversion devices based on GaNAsSb active layer lattice matched to GaAs
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