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Journal Articles

Influence of thickness scaling on the electronic structure and optical properties of oxygen deficient BaBiO3-δ thin films grown on SrTiO3-buffered Si(001) substrate

I. Ahmed, M. Korytov, S. Sergeant, T. Nuytten, T. Conard, S. De Gendt, C. Merckling
Journal: APL Materials
APL Mater. 12, 031105 (2024)
https://doi.org/10.1063/5.0188209
Published: March 2024
View articletitled, Influence of thickness scaling on the electronic structure and optical properties of oxygen deficient BaBiO3-δ thin films grown on SrTiO3-buffered Si(001) substrate
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Includes: Supplementary data
Journal Articles

Self-regulating plasma-assisted growth of epitaxial BaBiO3 thin-film on SrTiO3-buffered Si(001) substrate

I. Ahmed, S. De Gendt, C. Merckling
Journal: Journal of Applied Physics
J. Appl. Phys. 132, 225304 (2022)
https://doi.org/10.1063/5.0101227
Published: December 2022
View articletitled, Self-regulating plasma-assisted growth of epitaxial BaBiO3 thin-film on SrTiO3-buffered Si(001) substrate
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Includes: Supplementary data
Journal Articles

Plasma enhanced atomic layer etching of high-k layers on WS2

Editor’s Pick
J.-F. de Marneffe, D. Marinov, A. Goodyear, P.-J. Wyndaele, N. St. J. Braithwaite, S. Kundu, I. Asselberghs, M. Cooke, S. De Gendt
Journal: Journal of Vacuum Science & Technology A
J. Vac. Sci. Technol. A 40, 042602 (2022)
https://doi.org/10.1116/6.0001726
Published: May 2022
View articletitled, Plasma enhanced atomic layer etching of high-k layers on WS2
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Journal Articles

Leakage current induced by surfactant residues in self-assembly based ultralow-k dielectric materials

M. Krishtab, V. Afanas'ev, A. Stesmans, S. De Gendt
Journal: Applied Physics Letters
Appl. Phys. Lett. 111, 032908 (2017)
https://doi.org/10.1063/1.4995241
Published: July 2017
View articletitled, Leakage current induced by surfactant residues in self-assembly based ultralow-k dielectric materials
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Includes: Supplementary data
Journal Articles

Plasma induced damage mitigation in spin-on self-assembly based ultra low-k dielectrics using template residues

M. Krishtab, J.-F. de Marneffe, S. De Gendt, M. R. Baklanov
Journal: Applied Physics Letters
Appl. Phys. Lett. 110, 013105 (2017)
https://doi.org/10.1063/1.4973474
Published: January 2017
View articletitled, Plasma induced damage mitigation in spin-on self-assembly based ultra low-k dielectrics using template residues
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Includes: Supplementary data
Journal Articles

Damage free integration of ultralow-k dielectrics by template replacement approach

L. Zhang, J.-F. de Marneffe, N. Heylen, G. Murdoch, Z. Tokei, J. Boemmels, S. De Gendt, M. R. Baklanov
Journal: Applied Physics Letters
Appl. Phys. Lett. 107, 092901 (2015)
https://doi.org/10.1063/1.4930072
Published: September 2015
View articletitled, Damage free integration of ultralow-k dielectrics by template replacement approach
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Journal Articles

Metal gate work function tuning by Al incorporation in TiN

L. P. B. Lima, H. F. W. Dekkers, J. G. Lisoni, J. A. Diniz, S. Van Elshocht, S. De Gendt
Journal: Journal of Applied Physics
J. Appl. Phys. 115, 074504 (2014)
https://doi.org/10.1063/1.4866323
Published: February 2014
View articletitled, Metal gate work function tuning by Al incorporation in TiN
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Journal Articles

Evaluation and interpretation of bubble size distributions in pulsed megasonic fields

M. Hauptmann, H. Struyf, S. De Gendt, C. Glorieux, S. Brems
Journal: Journal of Applied Physics
J. Appl. Phys. 113, 184902 (2013)
https://doi.org/10.1063/1.4803858
Published: May 2013
View articletitled, Evaluation and interpretation of bubble size distributions in pulsed megasonic fields
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Journal Articles

The VO2 interface, the metal-insulator transition tunnel junction, and the metal-insulator transition switch On-Off resistance

K. Martens, I. P. Radu, S. Mertens, X. Shi, L. Nyns, S. Cosemans, P. Favia, H. Bender, T. Conard, M. Schaekers, S. De Gendt, V. Afanas'ev, J. A. Kittl, M. Heyns, M. Jurczak
Journal: Journal of Applied Physics
J. Appl. Phys. 112, 124501 (2012)
https://doi.org/10.1063/1.4767473
Published: December 2012
View articletitled, The VO2 interface, the metal-insulator transition tunnel junction, and the metal-insulator transition switch On-Off resistance
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Includes: Supplementary data
Journal Articles

Time-resolved monitoring of cavitation activity in megasonic cleaning systems

M. Hauptmann, S. Brems, H. Struyf, P. Mertens, M. Heyns, S. De Gendt, C. Glorieux
Journal: Review of Scientific Instruments
Rev. Sci. Instrum. 83, 034904 (2012)
https://doi.org/10.1063/1.3697710
Published: March 2012
View articletitled, Time-resolved monitoring of cavitation activity in megasonic cleaning systems
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Journal Articles

First-principles simulation of oxygen diffusion in HfOx: Role in the resistive switching mechanism

S. Clima, Y. Y. Chen, R. Degraeve, M. Mees, K. Sankaran, B. Govoreanu, M. Jurczak, S. De Gendt, G. Pourtois
Journal: Applied Physics Letters
Appl. Phys. Lett. 100, 133102 (2012)
https://doi.org/10.1063/1.3697690
Published: March 2012
View articletitled, First-principles simulation of oxygen diffusion in HfOx: Role in the resistive switching mechanism
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Journal Articles

S-passivation of the Ge gate stack: Tuning the gate stack properties by changing the atomic layer deposition oxidant precursor

S. Sioncke, H. C. Lin, L. Nyns, G. Brammertz, A. Delabie, T. Conard, A. Franquet, J. Rip, H. Struyf, S. De Gendt, M. Müller, B. Beckhoff, M. Caymax
Journal: Journal of Applied Physics
J. Appl. Phys. 110, 084907 (2011)
https://doi.org/10.1063/1.3622514
Published: October 2011
View articletitled, S-passivation of the Ge gate stack: Tuning the gate stack properties by changing the atomic layer deposition oxidant precursor
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Journal Articles

Improving mechanical robustness of ultralow- k SiOCH plasma enhanced chemical vapor deposition glasses by controlled porogen decomposition prior to UV-hardening

A. M. Urbanowicz, K. Vanstreels, P. Verdonck, D. Shamiryan, S. De Gendt, M. R. Baklanov
Journal: Journal of Applied Physics
J. Appl. Phys. 107, 104122 (2010)
https://doi.org/10.1063/1.3428958
Published: May 2010
View articletitled, Improving mechanical robustness of ultralow- k SiOCH plasma enhanced chemical vapor deposition glasses by controlled porogen decomposition prior to UV-hardening
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Journal Articles

Physical and chemical characterization of combinatorial metal gate electrode Ta–C–N library film

K.-S. Chang, M. L. Green, I. Levin, J. R. Hattrick-Simpers, C. Jaye, D. A. Fischer, I. Takeuchi, S. De Gendt
Journal: Applied Physics Letters
Appl. Phys. Lett. 96, 192114 (2010)
https://doi.org/10.1063/1.3428788
Published: May 2010
View articletitled, Physical and chemical characterization of combinatorial metal gate electrode Ta–C–N library film
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Journal Articles

High resolution medium energy ion scattering analysis for the quantitative depth profiling of ultrathin high- k layers

M. A. Reading, J. A. van den Berg, P. C. Zalm, D. G. Armour, P. Bailey, T. C. Q. Noakes, A. Parisini, T. Conard, S. De Gendt
Journal: Journal of Vacuum Science & Technology B
J. Vac. Sci. Technol. B 28, C1C65–C1C70 (2010)
https://doi.org/10.1116/1.3248264
Published: March 2010
View articletitled, High resolution medium energy ion scattering analysis for the quantitative depth profiling of ultrathin high- k layers
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Journal Articles

An assessment of the mobility degradation induced by remote charge scattering

Z. Ji, J. F. Zhang, W. Zhang, G. Groeseneken, L. Pantisano, S. De Gendt, M. M. Heyns
Journal: Applied Physics Letters
Appl. Phys. Lett. 95, 263502 (2009)
https://doi.org/10.1063/1.3279146
Published: December 2009
View articletitled, An assessment of the mobility degradation induced by remote charge scattering
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Journal Articles

On the activation and passivation of precursors for process-induced positive charges in Hf-dielectric stacks

M. H. Chang, C. Z. Zhao, Z. Ji, J. F. Zhang, G. Groeseneken, L. Pantisano, S. De Gendt, M. M. Heyns
Journal: Journal of Applied Physics
J. Appl. Phys. 105, 054505 (2009)
https://doi.org/10.1063/1.3093679
Published: March 2009
View articletitled, On the activation and passivation of precursors for process-induced positive charges in Hf-dielectric stacks
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Journal Articles

Thermally stable high effective work function TaCN thin films for metal gate electrode applications

C. Adelmann, J. Meersschaut, L.-Å. Ragnarsson, T. Conard, A. Franquet, N. Sengoku, Y. Okuno, P. Favia, H. Bender, C. Zhao, B. J. O’Sullivan, A. Rothschild, T. Schram, J. A. Kittl, S. Van Elshocht, S. De Gendt, P. Lehnen, O. Boissière, C. Lohe
Journal: Journal of Applied Physics
J. Appl. Phys. 105, 053516 (2009)
https://doi.org/10.1063/1.3078107
Published: March 2009
View articletitled, Thermally stable high effective work function TaCN thin films for metal gate electrode applications
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Journal Articles

Impact of nitridation on recoverable and permanent negative bias temperature instability degradation in high- k /metal-gate p -type metal oxide semiconductor field effect transistors

M. Aoulaiche, B. Kaczer, Ph. J. Roussel, R. O’Connor, M. Houssa, S. De Gendt, H. E. Maes, G. Groeseneken
Journal: Journal of Vacuum Science & Technology B
J. Vac. Sci. Technol. B 27, 463–467 (2009)
https://doi.org/10.1116/1.3058740
Published: February 2009
View articletitled, Impact of nitridation on recoverable and permanent negative bias temperature instability degradation in high- k /metal-gate p -type metal oxide semiconductor field effect transistors
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Journal Articles

Alternative high- k dielectrics for semiconductor applications

S. Van Elshocht, C. Adelmann, S. Clima, G. Pourtois, T. Conard, A. Delabie, A. Franquet, P. Lehnen, J. Meersschaut, N. Menou, M. Popovici, O. Richard, T. Schram, X. P. Wang, A. Hardy, D. Dewulf, M. K. Van Bael, P. Lehnen, T. Blomberg, D. Pierreux, J. Swerts, J. W. Maes, D. J. Wouters, S. De Gendt, J. A. Kittl
Journal: Journal of Vacuum Science & Technology B
J. Vac. Sci. Technol. B 27, 209–213 (2009)
https://doi.org/10.1116/1.3025855
Published: February 2009
View articletitled, Alternative high- k dielectrics for semiconductor applications
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