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Journal Articles

Impact of thermal annealing on bulk InGaAsSbN materials grown by metalorganic vapor phase epitaxy

T. W. Kim, K. Kim, J. J. Lee, T. F. Kuech, L. J. Mawst, N. P. Wells, S. D. LaLumondiere, Y. Sin, W. T. Lotshaw, S. C. Moss

Appl. Phys. Lett. 104, 051915 (2014)

https://doi.org/10.1063/1.4864111

Published: February 2014

View article titled, Impact of thermal annealing on bulk InGaAsSbN materials grown by metalorganic vapor phase epitaxy

Journal Articles

Narrow band gap (1 eV) InGaAsSbN solar cells grown by metalorganic vapor phase epitaxy

T. W. Kim, T. J. Garrod, K. Kim, J. J. Lee, S. D. LaLumondiere, Y. Sin, W. T. Lotshaw, S. C. Moss, T. F. Kuech, Rao Tatavarti, L. J. Mawst

Appl. Phys. Lett. 100, 121120 (2012)

https://doi.org/10.1063/1.3693160

Published: March 2012

View article titled, Narrow band gap (1 eV) InGaAsSbN solar cells grown by metalorganic vapor phase epitaxy

Journal Articles

Effect of strain on the growth of InAs/GaSb superlattices: An x-ray diffraction study

J. H. Li, D. W. Stokes, J. C Wickett, O. Caha, K. E. Bassler, S. C. Moss

J. Appl. Phys. 107, 123504 (2010)

https://doi.org/10.1063/1.3429100

Published: June 2010

View article titled, Effect of strain on the growth of InAs/GaSb superlattices: An x-ray diffraction study

Online

Obituary of Jamshed R. Patel

B. C. Larson, S. C. Moss, B. W. Batterman, Howard Padmore, K.-N. Tu, Nobumichi Tamura, and W. D. Nix

TOPICS: People & History

View Online titled, Obituary of Jamshed R. Patel

Journal Articles

X-ray diffraction on laterally modulated ( InAs ) n ∕ ( AlAs ) m short-period superlattices

O. Caha, V. Křápek, V. Holý, S. C. Moss, J. H. Li, A. G. Norman, A. Mascarenhas, J. L. Reno, J. Stangl, M. Meduňa

J. Appl. Phys. 96, 4833–4838 (2004)

https://doi.org/10.1063/1.1781768

Published: November 2004

View article titled, X-ray diffraction on laterally modulated ( InAs ) n ∕ ( AlAs ) m short-period superlattices

Journal Articles

Lateral composition modulation in InAs/GaSb superlattices

D. W. Stokes, R. L. Forrest, J. H. Li, S. C. Moss, B. Z. Nosho, B. R. Bennett, L. J. Whitman, M. Goldenberg

J. Appl. Phys. 93, 311–315 (2003)

https://doi.org/10.1063/1.1529291

Published: January 2003

View article titled, Lateral composition modulation in InAs/GaSb superlattices

Journal Articles

Determination of the order parameter of CuPt-B ordered GaInP 2 films by x-ray diffraction

J. H. Li, R. L. Forrest, S. C. Moss, Y. Zhang, A. Mascarenhas, J. Bai

J. Appl. Phys. 91, 9039–9042 (2002)

https://doi.org/10.1063/1.1476971

Published: June 2002

View article titled, Determination of the order parameter of CuPt-B ordered GaInP 2 films by x-ray diffraction

Journal Articles

X-ray study of antiphase boundaries in the quadruple-period ordered GaAs 0.87 Sb 0.13 alloy

Zhenyang Zhong, V. Holý, J. H. Li, J. Kulik, J. Bai, T. D. Golding, S. C. Moss

J. Appl. Phys. 90, 644–649 (2001)

https://doi.org/10.1063/1.1379056

Published: July 2001

View article titled, X-ray study of antiphase boundaries in the quadruple-period ordered GaAs 0.87 Sb 0.13 alloy

Journal Articles

Evolution of island–pit surface morphologies of InAs epilayers grown on GaAs (001) substrates

J. H. Li, S. C. Moss, B. S. Han, Z. H. Mai

J. Appl. Phys. 89, 3700–3705 (2001)

https://doi.org/10.1063/1.1354637

Published: April 2001

View article titled, Evolution of island–pit surface morphologies of InAs epilayers grown on GaAs (001) substrates

Journal Articles

X-ray analysis of spontaneous lateral modulation in ( InAs ) n /( AlAs ) m short-period superlattices

J. H. Li, V. Holý, Z. Zhong, J. Kulik, S. C. Moss, A. G. Norman, A. Mascarenhas, J. L. Reno, D. M. Follstaedt

Appl. Phys. Lett. 78, 219–221 (2001)

https://doi.org/10.1063/1.1338499

Published: January 2001

View article titled, X-ray analysis of spontaneous lateral modulation in ( InAs ) n /( AlAs ) m short-period superlattices

Journal Articles

Metastable surface ordering in strain relaxed Si 0.5 Ge 0.5 epitaxial layers grown at high temperature

H. Reichert, S. C. Moss, P. Imperatori, K. Evans-Lutterodt

Appl. Phys. Lett. 74, 531–533 (1999)

https://doi.org/10.1063/1.123177

Published: January 1999

View article titled, Metastable surface ordering in strain relaxed Si 0.5 Ge 0.5 epitaxial layers grown at high temperature

Journal Articles

X-ray studies of defects and thermal vibrations in an organometallic vapor phase epitaxy grown GaN thin film

X. Xiong, S. C. Moss

J. Appl. Phys. 82, 2308–2311 (1997)

https://doi.org/10.1063/1.366038

Published: September 1997

View article titled, X-ray studies of defects and thermal vibrations in an organometallic vapor phase epitaxy grown GaN thin film

Journal Articles

Interface properties of (In,Ga)Sb/InAs heterostructures

J. T. Zborowski, A. Vigliante, S. C. Moss, T. D. Golding

J. Appl. Phys. 79, 8379–8383 (1996)

https://doi.org/10.1063/1.362557

Published: June 1996

View article titled, Interface properties of (In,Ga)Sb/InAs heterostructures

Journal Articles

Epitaxial growth of Sb/GaSb structures: An example of V/III‐V heteroepitaxy

J. A. Dura, A. Vigliante, T. D. Golding, S. C. Moss

J. Appl. Phys. 77, 21–27 (1995)

https://doi.org/10.1063/1.359373

Published: January 1995

View article titled, Epitaxial growth of Sb/GaSb structures: An example of V/III‐V heteroepitaxy

Journal Articles

Epitaxial integration of single crystal C₆₀

J. A. Dura, P. M. Pippenger, N. J. Halas, X. Z. Xiong, P. C. Chow, S. C. Moss

Appl. Phys. Lett. 63, 3443–3445 (1993)

https://doi.org/10.1063/1.110114

Published: December 1993

View article titled, Epitaxial integration of single crystal C60

Journal Articles

Sb/GaSb heterostructures and multilayers

T. D. Golding, J. A. Dura, W. C. Wang, A. Vigliante, S. C. Moss, H. C. Chen, J. H. Miller, Jr., C. A. Hoffman, J. R. Meyer

Appl. Phys. Lett. 63, 1098–1100 (1993)

https://doi.org/10.1063/1.109792

Published: August 1993

View article titled, Sb/GaSb heterostructures and multilayers

Journal Articles

Growth of large, defect‐free pure C₆₀ single crystals

R. L. Meng, D. Ramirez, X. Jiang, P. C. Chow, C. Diaz, K. Matsuishi, S. C. Moss, P. H. Hor, C. W. Chu

Appl. Phys. Lett. 59, 3402–3403 (1991)

https://doi.org/10.1063/1.105688

Published: December 1991

View article titled, Growth of large, defect‐free pure C60 single crystals

Journal Articles

The fractal structure and the dynamics of aggregation of synthetic melanin in low pH aqueous solutions

J. S. Huang, J. Sung, M. Eisner, S. C. Moss, J. Gallas

J. Chem. Phys. 90, 25–29 (1989)

https://doi.org/10.1063/1.456528

Published: January 1989

View article titled, The fractal structure and the dynamics of aggregation of synthetic melanin in low pH aqueous solutions

Magazine Articles

Josef F. Graczyk

G. S. Cargill, III, P. Chaudhari, S. C. Moss

Physics Today 35, 85 (1982)

https://doi.org/10.1063/1.2914864

Published: November 1982

View article titled, Josef F. Graczyk

Journal Articles

Deuterium‐induced vanadium short‐range modulation above T_c in single crystal V₂D

H. S. U. Jo, S. C. Moss

AIP Conf. Proc. 53, 400–402 (1979)

https://doi.org/10.1063/1.31813

Published: July 1979

View article titled, Deuterium‐induced vanadium short‐range modulation above Tc in single crystal V2D

NARROW

Topics

Impact of thermal annealing on bulk InGaAsSbN materials grown by metalorganic vapor phase epitaxy

Narrow band gap (1 eV) InGaAsSbN solar cells grown by metalorganic vapor phase epitaxy

Effect of strain on the growth of InAs/GaSb superlattices: An x-ray diffraction study

Obituary of Jamshed R. Patel

X-ray diffraction on laterally modulated ( InAs ) n ∕ ( AlAs ) m short-period superlattices

Lateral composition modulation in InAs/GaSb superlattices

Determination of the order parameter of CuPt-B ordered GaInP 2 films by x-ray diffraction

X-ray study of antiphase boundaries in the quadruple-period ordered GaAs 0.87 Sb 0.13 alloy

Evolution of island–pit surface morphologies of InAs epilayers grown on GaAs (001) substrates

X-ray analysis of spontaneous lateral modulation in ( InAs ) n /( AlAs ) m short-period superlattices

Metastable surface ordering in strain relaxed Si 0.5 Ge 0.5 epitaxial layers grown at high temperature

X-ray studies of defects and thermal vibrations in an organometallic vapor phase epitaxy grown GaN thin film

Interface properties of (In,Ga)Sb/InAs heterostructures

Epitaxial growth of Sb/GaSb structures: An example of V/III‐V heteroepitaxy

Epitaxial integration of single crystal C₆₀

Sb/GaSb heterostructures and multilayers

Growth of large, defect‐free pure C₆₀ single crystals

The fractal structure and the dynamics of aggregation of synthetic melanin in low pH aqueous solutions

Josef F. Graczyk

Deuterium‐induced vanadium short‐range modulation above T_c in single crystal V₂D

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