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Journal Articles

GaN drift-layer thickness effects in vertical Schottky barrier diodes on free-standing HVPE GaN substrates

A. Sandupatla, S. Arulkumaran, G. I. Ng, K. Ranjan, M. Deki, S. Nitta, Y. Honda, H. Amano

AIP Advances 9, 045007 (2019)

https://doi.org/10.1063/1.5087491

Published: April 2019

View articletitled, GaN drift-layer thickness effects in vertical Schottky barrier diodes on free-standing HVPE GaN substrates

Journal Articles

Investigation of gate leakage current mechanism in AlGaN/GaN high-electron-mobility transistors with sputtered TiN

Y. Li, G. I. Ng, S. Arulkumaran, G. Ye, Z. H. Liu, K. Ranjan, K. S. Ang

J. Appl. Phys. 121, 044504 (2017)

https://doi.org/10.1063/1.4974959

Published: January 2017

View articletitled, Investigation of gate leakage current mechanism in AlGaN/GaN high-electron-mobility transistors with sputtered TiN

Journal Articles

Study on GaN buffer leakage current in AlGaN/GaN high electron mobility transistor structures grown by ammonia-molecular beam epitaxy on 100-mm Si(111)

L. Ravikiran, K. Radhakrishnan, S. Munawar Basha, N. Dharmarasu, M. Agrawal, C. M. Manoj kumar, S. Arulkumaran, G. I. Ng

J. Appl. Phys. 117, 245305 (2015)

https://doi.org/10.1063/1.4923035

Published: June 2015

View articletitled, Study on GaN buffer leakage current in AlGaN/GaN high electron mobility transistor structures grown by ammonia-molecular beam epitaxy on 100-mm Si(111)

Journal Articles

Effect of OFF-state stress induced electric field on trapping in AlGaN/GaN high electron mobility transistors on Si (111)

M. J. Anand, G. I. Ng, S. Arulkumaran, C. M. Manoj Kumar, K. Ranjan, S. Vicknesh, S. C. Foo, B. Syamal, X. Zhou

Appl. Phys. Lett. 106, 083508 (2015)

https://doi.org/10.1063/1.4913841

Published: February 2015

View articletitled, Effect of OFF-state stress induced electric field on trapping in AlGaN/GaN high electron mobility transistors on Si (111)

Journal Articles

Electron velocity of 6 × 10⁷cm/s at 300 K in stress engineered InAlN/GaN nano-channel high-electron-mobility transistors

S. Arulkumaran, G. I. Ng, C. M. Manoj Kumar, K. Ranjan, K. L. Teo, O. F. Shoron, S. Rajan, S. Bin Dolmanan, S. Tripathy

Appl. Phys. Lett. 106, 053502 (2015)

https://doi.org/10.1063/1.4906970

Published: February 2015

View articletitled, Electron velocity of 6 × 107 cm/s at 300 K in stress engineered InAlN/GaN nano-channel high-electron-mobility transistors

Includes: Supplementary data

Journal Articles

Growth and characterization of AlGaN/GaN/AlGaN double-heterojunction high-electron-mobility transistors on 100-mm Si(111) using ammonia-molecular beam epitaxy

L. Ravikiran, N. Dharmarasu, K. Radhakrishnan, M. Agrawal, Lin Yiding, S. Arulkumaran, S. Vicknesh, G. I. Ng

J. Appl. Phys. 117, 025301 (2015)

https://doi.org/10.1063/1.4905620

Published: January 2015

View articletitled, Growth and characterization of AlGaN/GaN/AlGaN double-heterojunction high-electron-mobility transistors on 100-mm Si(111) using ammonia-molecular beam epitaxy

Journal Articles

Atomic layer deposition of ZrO₂ as gate dielectrics for AlGaN/GaN metal-insulator-semiconductor high electron mobility transistors on silicon

G. Ye, H. Wang, S. Arulkumaran, G. I. Ng, R. Hofstetter, Y. Li, M. J. Anand, K. S. Ang, Y. K. T. Maung, S. C. Foo

Appl. Phys. Lett. 103, 142109 (2013)

https://doi.org/10.1063/1.4824445

Published: October 2013

View articletitled, Atomic layer deposition of ZrO2 as gate dielectrics for AlGaN/GaN metal-insulator-semiconductor high electron mobility transistors on silicon

Journal Articles

AlGaN/GaN two-dimensional-electron gas heterostructures on 200 mm diameter Si(111)

S. Tripathy, Vivian K. X. Lin, S. B. Dolmanan, Joyce P. Y. Tan, R. S. Kajen, L. K. Bera, S. L. Teo, M. Krishna Kumar, S. Arulkumaran, G. I. Ng, S. Vicknesh, Shane Todd, W. Z. Wang, G. Q. Lo, H. Li, D. Lee, S. Han

Appl. Phys. Lett. 101, 082110 (2012)

https://doi.org/10.1063/1.4746751

Published: August 2012

View articletitled, AlGaN/GaN two-dimensional-electron gas heterostructures on 200 mm diameter Si(111)

Includes: Supplementary data

Journal Articles

Temperature-dependent forward gate current transport in atomic-layer-deposited Al 2 O 3 / AlGaN / GaN metal-insulator-semiconductor high electron mobility transistor

Z. H. Liu, G. I. Ng, S. Arulkumaran, Y. K. T. Maung, H. Zhou

Appl. Phys. Lett. 98, 163501 (2011)

https://doi.org/10.1063/1.3573794

Published: April 2011

View articletitled, Temperature-dependent forward gate current transport in atomic-layer-deposited Al 2 O 3 / AlGaN / GaN metal-insulator-semiconductor high electron mobility transistor

Journal Articles

Reduced surface leakage current and trapping effects in AlGaN/GaN high electron mobility transistors on silicon with SiN / Al 2 O 3 passivation

Z. H. Liu, G. I. Ng, H. Zhou, S. Arulkumaran, Y. K. T. Maung

Appl. Phys. Lett. 98, 113506 (2011)

https://doi.org/10.1063/1.3567927

Published: March 2011

View articletitled, Reduced surface leakage current and trapping effects in AlGaN/GaN high electron mobility transistors on silicon with SiN / Al 2 O 3 passivation

Journal Articles

Demonstration of AlGaN/GaN high-electron-mobility transistors on 100 mm diameter Si(111) by plasma-assisted molecular beam epitaxy

K. Radhakrishnan, N. Dharmarasu, Z. Sun, S. Arulkumaran, G. I. Ng

Appl. Phys. Lett. 97, 232107 (2010)

https://doi.org/10.1063/1.3518717

Published: December 2010

View articletitled, Demonstration of AlGaN/GaN high-electron-mobility transistors on 100 mm diameter Si(111) by plasma-assisted molecular beam epitaxy

Journal Articles

Improved two-dimensional electron gas transport characteristics in AlGaN/GaN metal-insulator-semiconductor high electron mobility transistor with atomic layer-deposited Al 2 O 3 as gate insulator

Z. H. Liu, G. I. Ng, S. Arulkumaran, Y. K. T. Maung, K. L. Teo, S. C. Foo, V. Sahmuganathan

Appl. Phys. Lett. 95, 223501 (2009)

https://doi.org/10.1063/1.3268474

Published: November 2009

View articletitled, Improved two-dimensional electron gas transport characteristics in AlGaN/GaN metal-insulator-semiconductor high electron mobility transistor with atomic layer-deposited Al 2 O 3 as gate insulator

Journal Articles

Temperature dependence of Ohmic contact characteristics in AlGaN/GaN high electron mobility transistors from −50 to 200 ° C

Z. H. Liu, S. Arulkumaran, G. I. Ng

Appl. Phys. Lett. 94, 142105 (2009)

https://doi.org/10.1063/1.3114422

Published: April 2009

View articletitled, Temperature dependence of Ohmic contact characteristics in AlGaN/GaN high electron mobility transistors from −50 to 200 ° C

Journal Articles

Sheet carrier density enhancement by Si 3 N 4 passivation on nonpolar a -plane ( 11 2 ¯ ) sapphire grown Al Ga N ∕ Ga N heterostructures

S. Arulkumaran, S. Lawrence Selvaraj, T. Egawa, G. I. Ng

Appl. Phys. Lett. 92, 092116 (2008)

https://doi.org/10.1063/1.2857479

Published: March 2008

View articletitled, Sheet carrier density enhancement by Si 3 N 4 passivation on nonpolar a -plane ( 11 2 ¯ ) sapphire grown Al Ga N ∕ Ga N heterostructures

Journal Articles

High temperature power performance of Al Ga N ∕ Ga N high-electron-mobility transistors on high-resistivity silicon

S. Arulkumaran, G. I. Ng, Z. H. Liu, C. H. Lee

Appl. Phys. Lett. 91, 083516 (2007)

https://doi.org/10.1063/1.2773987

Published: August 2007

View articletitled, High temperature power performance of Al Ga N ∕ Ga N high-electron-mobility transistors on high-resistivity silicon

Journal Articles

Effect of gate-source and gate-drain Si 3 N 4 passivation on current collapse in Al Ga N ∕ Ga N high-electron-mobility transistors on silicon

S. Arulkumaran, G. I. Ng, Z. H. Liu

Appl. Phys. Lett. 90, 173504 (2007)

https://doi.org/10.1063/1.2730748

Published: April 2007

View articletitled, Effect of gate-source and gate-drain Si 3 N 4 passivation on current collapse in Al Ga N ∕ Ga N high-electron-mobility transistors on silicon

Journal Articles

Enhancement of both direct-current and microwave characteristics of Al Ga N ∕ Ga N high-electron-mobility transistors by furnace annealing

S. Arulkumaran, G. I. Ng, C. L. Tan, Z. H. Liu, J. Bu, K. Radhakrishnan, T. Aggerstam, M. Sjödin, S. Lourdudoss

Appl. Phys. Lett. 88, 023502 (2006)

https://doi.org/10.1063/1.2162092

Published: January 2006

View articletitled, Enhancement of both direct-current and microwave characteristics of Al Ga N ∕ Ga N high-electron-mobility transistors by furnace annealing

Journal Articles

Demonstration of undoped quaternary Al In Ga N ∕ Ga N heterostructure field-effect transistor on sapphire substrate

Y. Liu, H. Jiang, S. Arulkumaran, T. Egawa, B. Zhang, H. Ishikawa

Appl. Phys. Lett. 86, 223510 (2005)

https://doi.org/10.1063/1.1942643

Published: May 2005

View articletitled, Demonstration of undoped quaternary Al In Ga N ∕ Ga N heterostructure field-effect transistor on sapphire substrate

Journal Articles

Enhancement of breakdown voltage by AlN buffer layer thickness in Al Ga N ∕ Ga N high-electron-mobility transistors on 4 in. diameter silicon

S. Arulkumaran, T. Egawa, S. Matsui, H. Ishikawa

Appl. Phys. Lett. 86, 123503 (2005)

https://doi.org/10.1063/1.1879091

Published: March 2005

View articletitled, Enhancement of breakdown voltage by AlN buffer layer thickness in Al Ga N ∕ Ga N high-electron-mobility transistors on 4 in. diameter silicon

Journal Articles

Current collapse-free i - GaN ∕ AlGaN ∕ GaN high-electron-mobility transistors with and without surface passivation

S. Arulkumaran, T. Hibino, T. Egawa, H. Ishikawa

Appl. Phys. Lett. 85, 5745–5747 (2004)

https://doi.org/10.1063/1.1830677

Published: December 2004

View articletitled, Current collapse-free i - GaN ∕ AlGaN ∕ GaN high-electron-mobility transistors with and without surface passivation

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GaN drift-layer thickness effects in vertical Schottky barrier diodes on free-standing HVPE GaN substrates

Investigation of gate leakage current mechanism in AlGaN/GaN high-electron-mobility transistors with sputtered TiN

Study on GaN buffer leakage current in AlGaN/GaN high electron mobility transistor structures grown by ammonia-molecular beam epitaxy on 100-mm Si(111)

Effect of OFF-state stress induced electric field on trapping in AlGaN/GaN high electron mobility transistors on Si (111)

Electron velocity of 6 × 10⁷cm/s at 300 K in stress engineered InAlN/GaN nano-channel high-electron-mobility transistors

Growth and characterization of AlGaN/GaN/AlGaN double-heterojunction high-electron-mobility transistors on 100-mm Si(111) using ammonia-molecular beam epitaxy

Atomic layer deposition of ZrO₂ as gate dielectrics for AlGaN/GaN metal-insulator-semiconductor high electron mobility transistors on silicon

AlGaN/GaN two-dimensional-electron gas heterostructures on 200 mm diameter Si(111)

Temperature-dependent forward gate current transport in atomic-layer-deposited Al 2 O 3 / AlGaN / GaN metal-insulator-semiconductor high electron mobility transistor

Reduced surface leakage current and trapping effects in AlGaN/GaN high electron mobility transistors on silicon with SiN / Al 2 O 3 passivation

Demonstration of AlGaN/GaN high-electron-mobility transistors on 100 mm diameter Si(111) by plasma-assisted molecular beam epitaxy

Improved two-dimensional electron gas transport characteristics in AlGaN/GaN metal-insulator-semiconductor high electron mobility transistor with atomic layer-deposited Al 2 O 3 as gate insulator

Temperature dependence of Ohmic contact characteristics in AlGaN/GaN high electron mobility transistors from −50 to 200 ° C

Sheet carrier density enhancement by Si 3 N 4 passivation on nonpolar a -plane ( 11 2 ¯ ) sapphire grown Al Ga N ∕ Ga N heterostructures

High temperature power performance of Al Ga N ∕ Ga N high-electron-mobility transistors on high-resistivity silicon

Effect of gate-source and gate-drain Si 3 N 4 passivation on current collapse in Al Ga N ∕ Ga N high-electron-mobility transistors on silicon

Enhancement of both direct-current and microwave characteristics of Al Ga N ∕ Ga N high-electron-mobility transistors by furnace annealing

Demonstration of undoped quaternary Al In Ga N ∕ Ga N heterostructure field-effect transistor on sapphire substrate

Enhancement of breakdown voltage by AlN buffer layer thickness in Al Ga N ∕ Ga N high-electron-mobility transistors on 4 in. diameter silicon

Current collapse-free i - GaN ∕ AlGaN ∕ GaN high-electron-mobility transistors with and without surface passivation

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