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Journal Articles

Local trap spectroscopy on cross-sectioned AlGaN/GaN devices with in situ biasing

D. A. Gleason, K. Galiano, J. L. Brown, A. M. Hilton, S. A. Ringel, A. R. Arehart, E. R. Heller, D. L. Dorsey, J. P. Pelz
Journal: Applied Physics Letters
Appl. Phys. Lett. 114, 053510 (2019)
https://doi.org/10.1063/1.5079745
Published: February 2019
View article titled, Local trap spectroscopy on cross-sectioned AlGaN/GaN devices with <em>in situ</em> biasing
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Includes: Supplementary data
Journal Articles

Spatial correlation of the EC-0.57 eV trap state with edge dislocations in epitaxial n-type gallium nitride

K. Galiano, J. I. Deitz, S. D. Carnevale, D. A. Gleason, P. K. Paul, Z. Zhang, B. M. McSkimming, J. S. Speck, S. A. Ringel, T. J. Grassman, A. R. Arehart, J. P. Pelz
Journal: Journal of Applied Physics
J. Appl. Phys. 123, 224504 (2018)
https://doi.org/10.1063/1.5022806
Published: June 2018
View article titled, Spatial correlation of the E<sub>C</sub>-0.57 eV trap state with edge dislocations in epitaxial n-type gallium nitride
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Includes: Supplementary data
Journal Articles

Correlation of proton irradiation induced threshold voltage shifts to deep level traps in AlGaN/GaN heterostructures

Z. Zhang, D. Cardwell, A. Sasikumar, E. C. H. Kyle, J. Chen, E. X. Zhang, D. M. Fleetwood, R. D. Schrimpf, J. S. Speck, A. R. Arehart, S. A. Ringel
Journal: Journal of Applied Physics
J. Appl. Phys. 119, 165704 (2016)
https://doi.org/10.1063/1.4948298
Published: April 2016
View article titled, Correlation of proton irradiation induced threshold voltage shifts to deep level traps in AlGaN/GaN heterostructures
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Journal Articles

Erratum: “Deep level defects throughout the bandgap of (010) β-Ga2O3 detected by optically and thermally stimulated defect spectroscopy” [Appl. Phys. Lett. 108 , 052105 (2016)]

Z. Zhang, E. Farzana, A. R. Arehart, S. A. Ringel
Journal: Applied Physics Letters
Appl. Phys. Lett. 108, 079901 (2016)
https://doi.org/10.1063/1.4942431
Published: February 2016
View article titled, Erratum: “Deep level defects throughout the bandgap of (010) β-Ga<sub>2</sub>O<sub>3</sub> detected by optically and thermally stimulated defect spectroscopy” [Appl. Phys. Lett. 108 , 052105 (2016)]
Open the PDF for Erratum: “Deep level defects throughout the bandgap of (010) β-Ga<sub>2</sub>O<sub>3</sub> detected by optically and thermally stimulated defect spectroscopy” [Appl. Phys. Lett. 108 , 052105 (2016)] in another window
Journal Articles

Deep level defects throughout the bandgap of (010) β-Ga2O3 detected by optically and thermally stimulated defect spectroscopy

Z. Zhang, E. Farzana, A. R. Arehart, S. A. Ringel
Journal: Applied Physics Letters
Appl. Phys. Lett. 108, 052105 (2016)
https://doi.org/10.1063/1.4941429
Published: February 2016
View article titled, Deep level defects throughout the bandgap of (010) β-Ga<sub>2</sub>O<sub>3</sub> detected by optically and thermally stimulated defect spectroscopy
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Journal Articles

Electrical and structural characterizations of crystallized Al2O3/GaN interfaces formed by in situ metalorganic chemical vapor deposition

X. Liu, C. M. Jackson, F. Wu, B. Mazumder, R. Yeluri, J. Kim, S. Keller, A. R. Arehart, S. A. Ringel, J. S. Speck, U. K. Mishra
Journal: Journal of Applied Physics
J. Appl. Phys. 119, 015303 (2016)
https://doi.org/10.1063/1.4939157
Published: January 2016
View article titled, Electrical and structural characterizations of crystallized Al<sub>2</sub>O<sub>3</sub>/GaN interfaces formed by <em>in situ</em> metalorganic chemical vapor deposition
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Journal Articles

Thermal stability of deep level defects induced by high energy proton irradiation in n-type GaN

Z. Zhang, E. Farzana, W. Y. Sun, J. Chen, E. X. Zhang, D. M. Fleetwood, R. D. Schrimpf, B. McSkimming, E. C. H. Kyle, J. S. Speck, A. R. Arehart, S. A. Ringel
Journal: Journal of Applied Physics
J. Appl. Phys. 118, 155701 (2015)
https://doi.org/10.1063/1.4933174
Published: October 2015
View article titled, Thermal stability of deep level defects induced by high energy proton irradiation in n-type GaN
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Journal Articles

Publisher’s Note: “Correlation of a generation-recombination center with a deep level trap in GaN” [Appl. Phys. Lett. 106 , 102101 (2015)]

X. S. Nguyen, K. Lin, Z. Zhang, B. McSkimming, A. R. Arehart, J. S. Speck, S. A. Ringel, E. A. Fitzgerald, S. J. Chua
Journal: Applied Physics Letters
Appl. Phys. Lett. 106, 159903 (2015)
https://doi.org/10.1063/1.4918373
Published: April 2015
View article titled, Publisher’s Note: “Correlation of a generation-recombination center with a deep level trap in GaN” [Appl. Phys. Lett. 106 , 102101 (2015)]
Open the PDF for Publisher’s Note: “Correlation of a generation-recombination center with a deep level trap in GaN” [Appl. Phys. Lett. 106 , 102101 (2015)] in another window
Journal Articles

Correlation of a generation-recombination center with a deep level trap in GaN

X. S. Nguyen, K. Lin, Z. Zhang, B. McSkimming, A. R. Arehart, J. S. Speck, S. A. Ringel, E. A. Fitzgerald, S. J. Chua
Journal: Applied Physics Letters
Appl. Phys. Lett. 106, 102101 (2015)
https://doi.org/10.1063/1.4914393
Published: March 2015
View article titled, Correlation of a generation-recombination center with a deep level trap in GaN
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Journal Articles

Proton irradiation effects on deep level states in Mg-doped p-type GaN grown by ammonia-based molecular beam epitaxy

Z. Zhang, A. R. Arehart, E. C. H. Kyle, J. Chen, E. X. Zhang, D. M. Fleetwood, R. D. Schrimpf, J. S. Speck, S. A. Ringel
Journal: Applied Physics Letters
Appl. Phys. Lett. 106, 022104 (2015)
https://doi.org/10.1063/1.4905783
Published: January 2015
View article titled, Proton irradiation effects on deep level states in Mg-doped p-type GaN grown by ammonia-based molecular beam epitaxy
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Journal Articles

Interface trap evaluation of Pd/Al2O3/GaN metal oxide semiconductor capacitors and the influence of near-interface hydrogen

R. D. Long, C. M. Jackson, J. Yang, A. Hazeghi, C. Hitzman, S. Majety, A. R. Arehart, Y. Nishi, T. P. Ma, S. A. Ringel, P. C. McIntyre
Journal: Applied Physics Letters
Appl. Phys. Lett. 103, 201607 (2013)
https://doi.org/10.1063/1.4827102
Published: November 2013
View article titled, Interface trap evaluation of Pd/Al<sub>2</sub>O<sub>3</sub>/GaN metal oxide semiconductor capacitors and the influence of near-interface hydrogen
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Journal Articles

Impact of proton irradiation on deep level states in n-GaN

Z. Zhang, A. R. Arehart, E. Cinkilic, J. Chen, E. X. Zhang, D. M. Fleetwood, R. D. Schrimpf, B. McSkimming, J. S. Speck, S. A. Ringel
Journal: Applied Physics Letters
Appl. Phys. Lett. 103, 042102 (2013)
https://doi.org/10.1063/1.4816423
Published: July 2013
View article titled, Impact of proton irradiation on deep level states in n-GaN
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Journal Articles

Direct comparison of traps in InAlN/GaN and AlGaN/GaN high electron mobility transistors using constant drain current deep level transient spectroscopy

A. Sasikumar, A. R. Arehart, S. Martin-Horcajo, M. F. Romero, Y. Pei, D. Brown, F. Recht, M. A. di Forte-Poisson, F. Calle, M. J. Tadjer, S. Keller, S. P. DenBaars, U. K. Mishra, S. A. Ringel
Journal: Applied Physics Letters
Appl. Phys. Lett. 103, 033509 (2013)
https://doi.org/10.1063/1.4813862
Published: July 2013
View article titled, Direct comparison of traps in InAlN/GaN and AlGaN/GaN high electron mobility transistors using constant drain current deep level transient spectroscopy
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Journal Articles

Spatially-resolved spectroscopic measurements of Ec − 0.57 eV traps in AlGaN/GaN high electron mobility transistors

D. W. Cardwell, A. Sasikumar, A. R. Arehart, S. W. Kaun, J. Lu, S. Keller, J. S. Speck, U. K. Mishra, S. A. Ringel, J. P. Pelz
Journal: Applied Physics Letters
Appl. Phys. Lett. 102, 193509 (2013)
https://doi.org/10.1063/1.4806980
Published: May 2013
View article titled, Spatially-resolved spectroscopic measurements of <em>E<sub>c</sub></em> − 0.57 eV traps in AlGaN/GaN high electron mobility transistors
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Journal Articles

Nucleation-related defect-free GaP/Si(100) heteroepitaxy via metal-organic chemical vapor deposition

T. J. Grassman, J. A. Carlin, B. Galiana, L.-M. Yang, F. Yang, M. J. Mills, S. A. Ringel
Journal: Applied Physics Letters
Appl. Phys. Lett. 102, 142102 (2013)
https://doi.org/10.1063/1.4801498
Published: April 2013
View article titled, Nucleation-related defect-free GaP/Si(100) heteroepitaxy via metal-organic chemical vapor deposition
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Journal Articles

Deep levels in a-plane, high Mg-content MgxZn1−xO epitaxial layers grown by molecular beam epitaxy

Emre Gür, G. Tabares, A. Arehart, J. M. Chauveau, A. Hierro, S. A. Ringel
Journal: Journal of Applied Physics
J. Appl. Phys. 112, 123709 (2012)
https://doi.org/10.1063/1.4769874
Published: December 2012
View article titled, Deep levels in a-plane, high Mg-content Mg<sub>x</sub>Zn<sub>1−x</sub>O epitaxial layers grown by molecular beam epitaxy
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Journal Articles

Influence of V/III growth flux ratio on trap states in m-plane GaN grown by ammonia-based molecular beam epitaxy

Z. Zhang, C. A. Hurni, A. R. Arehart, J. S. Speck, S. A. Ringel
Journal: Applied Physics Letters
Appl. Phys. Lett. 101, 152104 (2012)
https://doi.org/10.1063/1.4759037
Published: October 2012
View article titled, Influence of V/III growth flux ratio on trap states in m-plane GaN grown by ammonia-based molecular beam epitaxy
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Journal Articles

Nm-scale measurements of fast surface potential transients in an AlGaN/GaN high electron mobility transistor

D. W. Cardwell, A. R. Arehart, C. Poblenz, Y. Pei, J. S. Speck, U. K. Mishra, S. A. Ringel, J. P. Pelz
Journal: Applied Physics Letters
Appl. Phys. Lett. 100, 193507 (2012)
https://doi.org/10.1063/1.4714536
Published: May 2012
View article titled, Nm-scale measurements of fast surface potential transients in an AlGaN/GaN high electron mobility transistor
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Journal Articles

Deep traps in nonpolar m-plane GaN grown by ammonia-based molecular beam epitaxy

Z. Zhang, C. A. Hurni, A. R. Arehart, J. Yang, R. C. Myers, J. S. Speck, S. A. Ringel
Journal: Applied Physics Letters
Appl. Phys. Lett. 100, 052114 (2012)
https://doi.org/10.1063/1.3682528
Published: February 2012
View article titled, Deep traps in nonpolar m-plane GaN grown by ammonia-based molecular beam epitaxy
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Journal Articles

Publisher’s Note: “Detailed characterization of deep level defects in InGaN Schottky diodes by optical and thermal deep level spectroscopies” [Appl. Phys. Lett. 99, 092109 (2011)]

Emre Gür, Zeng Zhang, Sriram Krishnamoorthy, S. Rajan, S. A. Ringel
Journal: Applied Physics Letters
Appl. Phys. Lett. 99, 229906 (2011)
https://doi.org/10.1063/1.3666222
Published: December 2011
View article titled, Publisher’s Note: “Detailed characterization of deep level defects in InGaN Schottky diodes by optical and thermal deep level spectroscopies” [Appl. Phys. Lett. 99, 092109 (2011)]
Open the PDF for Publisher’s Note: “Detailed characterization of deep level defects in InGaN Schottky diodes by optical and thermal deep level spectroscopies” [Appl. Phys. Lett. 99, 092109 (2011)] in another window