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Journal Articles

Interface chemistry, band alignment, and thermal stability study of Sn metal contact on bulk and monolayer MoS2

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Joy Roy, Seong Yeoul Kim, Robert M. Wallace
Journal: Journal of Vacuum Science & Technology B
J. Vac. Sci. Technol. B 42, 052202 (2024)
https://doi.org/10.1116/6.0003845
Published: August 2024
View articletitled, Interface chemistry, band alignment, and thermal stability study of Sn metal contact on bulk and monolayer MoS2
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Journal Articles

Impact of process anneals on high-k/β-Ga2O3 interfaces and capacitance

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Roberta Hawkins, Xinglu Wang, Naim Moumen, Robert M. Wallace, Chadwin D. Young
Journal: Journal of Vacuum Science & Technology A
J. Vac. Sci. Technol. A 41, 023203 (2023)
https://doi.org/10.1116/6.0002264
Published: February 2023
View articletitled, Impact of process anneals on high-k/β-Ga2O3 interfaces and capacitance
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Journal Articles

In situ isotope study of indium diffusion in InP/Al2O3 stacks

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Ze Feng, Xiaoye Qin, Xiao Chen, Zhiyun Li, Rong Huang, Yang Shen, Ding Ding, Yitong Wang, Meiyi Jing, Yi Cui, An Dingsun, Hui Liu, Hong Dong, Robert M. Wallace
Journal: Applied Physics Letters
Appl. Phys. Lett. 120, 032103 (2022)
https://doi.org/10.1063/5.0069679
Published: January 2022
View articletitled, In situ isotope study of indium diffusion in InP/Al2O3 stacks
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Includes: Supplementary data
Journal Articles

Understanding and optimization of graphene gas sensors

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Ti Xie, Qin Wang, Robert M. Wallace, Cheng Gong
Journal: Applied Physics Letters
Appl. Phys. Lett. 119, 013104 (2021)
https://doi.org/10.1063/5.0057066
Published: July 2021
View articletitled, Understanding and optimization of graphene gas sensors
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Journal Articles

Dielectric breakdown in epitaxial BaTiO3 thin films

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HsinWei Wu, Patrick Ponath, Edward L. Lin, Robert M. Wallace, Chadwin Young, John G. Ekerdt, Alexander A. Demkov, Martha R. McCartney, David J. Smith
Journal: Journal of Vacuum Science & Technology B
J. Vac. Sci. Technol. B 38, 044007 (2020)
https://doi.org/10.1116/6.0000237
Published: July 2020
View articletitled, Dielectric breakdown in epitaxial BaTiO3 thin films
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Journal Articles

In situ exfoliated 2D molybdenum disulfide analyzed by XPS

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Xinglu Wang, Christopher R. Cormier, Ava Khosravi, Christopher M. Smyth, Jeffrey R. Shallenberger, Rafik Addou, Robert M. Wallace
Journal: Surface Science Spectra
Surf. Sci. Spectra 27, 014019 (2020)
https://doi.org/10.1116/6.0000153
Published: May 2020
View articletitled, In situ exfoliated 2D molybdenum disulfide analyzed by XPS
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Includes: Supplementary data
Journal Articles

2D topological insulator bismuth selenide analyzed by in situ XPS

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Xinglu Wang, Christopher M. Smyth, Ava Khosravi, Christopher R. Cormier, Jeffrey R. Shallenberger, Rafik Addou, Robert M. Wallace
Journal: Surface Science Spectra
Surf. Sci. Spectra 26, 024014 (2019)
https://doi.org/10.1116/1.5130891
Published: January 2020
View articletitled, 2D topological insulator bismuth selenide analyzed by in situ XPS
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Includes: Supplementary data
Journal Articles

2D bismuth telluride analyzed by XPS

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Jeffrey R. Shallenberger, Christopher M. Smyth, Rafik Addou, Robert M. Wallace
Journal: Surface Science Spectra
Surf. Sci. Spectra 26, 024011 (2019)
https://doi.org/10.1116/1.5120015
Published: November 2019
View articletitled, 2D bismuth telluride analyzed by XPS
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Includes: Supplementary data
Journal Articles

Research Update: Recent progress on 2D materials beyond graphene: From ripples, defects, intercalation, and valley dynamics to straintronics and power dissipation

FeaturedOpen Access
Zhong Lin, Yu Lei, Shruti Subramanian, Natalie Briggs, Yuanxi Wang, Chun-Li Lo, Eilam Yalon, David Lloyd, Sanfeng Wu, Kristie Koski, Richard Clark, Saptarshi Das, Robert M. Wallace, Thomas Kuech, Joseph Scott Bunch, Xiaoqin Li, Zhihong Chen, Eric Pop, Vincent H. Crespi, Joshua A. Robinson, Mauricio Terrones
Journal: APL Materials
APL Mater. 6, 080701 (2018)
https://doi.org/10.1063/1.5042598
Published: August 2018
View articletitled, Research Update: Recent progress on 2D materials beyond graphene: From ripples, defects, intercalation, and valley dynamics to straintronics and power dissipation
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Journal Articles

Dual-gate MoS2 transistors with sub-10 nm top-gate high-k dielectrics

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Pavel Bolshakov, Ava Khosravi, Peng Zhao, Paul K. Hurley, Christopher L. Hinkle, Robert M. Wallace, Chadwin D. Young
Journal: Applied Physics Letters
Appl. Phys. Lett. 112, 253502 (2018)
https://doi.org/10.1063/1.5027102
Published: June 2018
View articletitled, Dual-gate MoS2 transistors with sub-10 nm top-gate high-k dielectrics
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Includes: Supplementary data
Journal Articles

Covalent nitrogen doping in molecular beam epitaxy-grown and bulk WSe2

Open Access
Ava Khosravi, Rafik Addou, Christopher M. Smyth, Ruoyu Yue, Christopher R. Cormier, Jiyoung Kim, Christopher L. Hinkle, Robert M. Wallace
Journal: APL Materials
APL Mater. 6, 026603 (2018)
https://doi.org/10.1063/1.5002132
Published: January 2018
View articletitled, Covalent nitrogen doping in molecular beam epitaxy-grown and bulk WSe2
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Includes: Supplementary data
Journal Articles

Al2O3 on WSe2 by ozone based atomic layer deposition: Nucleation and interface study

Open Access
Angelica Azcatl, Qingxiao Wang, Moon J. Kim, Robert M. Wallace
Journal: APL Materials
APL Mater. 5, 086108 (2017)
https://doi.org/10.1063/1.4992120
Published: August 2017
View articletitled, Al2O3 on WSe2 by ozone based atomic layer deposition: Nucleation and interface study
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Includes: Supplementary data
Journal Articles

Improvement in top-gate MoS2 transistor performance due to high quality backside Al2O3 layer

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Pavel Bolshakov, Peng Zhao, Angelica Azcatl, Paul K. Hurley, Robert M. Wallace, Chadwin D. Young
Journal: Applied Physics Letters
Appl. Phys. Lett. 111, 032110 (2017)
https://doi.org/10.1063/1.4995242
Published: July 2017
View articletitled, Improvement in top-gate MoS2 transistor performance due to high quality backside Al2O3 layer
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Includes: Supplementary data
Journal Articles

A crystalline oxide passivation on In0.53Ga0.47As (100)

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Xiaoye Qin, Wei-E Wang, Ravi Droopad, Mark S. Rodder, Robert M. Wallace
Journal: Journal of Applied Physics
J. Appl. Phys. 121, 125302 (2017)
https://doi.org/10.1063/1.4979202
Published: March 2017
View articletitled, A crystalline oxide passivation on In0.53Ga0.47As (100)
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Journal Articles

Impurity and silicate formation dependence on O3 pulse time and the growth temperature in atomic-layer-deposited La2O3 thin films

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Tae Joo Park, Young-Chul Byun, Robert M. Wallace, Jiyoung Kim
Journal: The Journal of Chemical Physics
J. Chem. Phys. 146, 052821 (2017)
https://doi.org/10.1063/1.4975083
Published: February 2017
View articletitled, Impurity and silicate formation dependence on O3 pulse time and the growth temperature in atomic-layer-deposited La2O3 thin films
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Journal Articles

Effects of annealing on top-gated MoS2 transistors with HfO2 dielectric

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Peng Zhao, Angelica Azcatl, Pavel Bolshakov, Jiyoung Moon, Christopher L. Hinkle, Paul K. Hurley, Robert M. Wallace, Chadwin D. Young
Journal: Journal of Vacuum Science & Technology B
J. Vac. Sci. Technol. B 35, 01A118 (2017)
https://doi.org/10.1116/1.4974220
Published: January 2017
View articletitled, Effects of annealing on top-gated MoS2 transistors with HfO2 dielectric
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Journal Articles

Band alignments between SmTiO3, GdTiO3, and SrTiO3

Editor’s PickFeaturedFree
Lars Bjaalie, Angelica Azcatl, Stephen McDonnell, Christopher R. Freeze, Susanne Stemmer, Robert M. Wallace, Chris G. Van de Walle
Journal: Journal of Vacuum Science & Technology A
J. Vac. Sci. Technol. A 34, 061102 (2016)
https://doi.org/10.1116/1.4963833
Published: October 2016
View articletitled, Band alignments between SmTiO3, GdTiO3, and SrTiO3
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Journal Articles

In situ surface and interface study of crystalline (3×1)-O on InAs

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Xiaoye Qin, Wei-E. Wang, Mark S. Rodder, Robert M. Wallace
Journal: Applied Physics Letters
Appl. Phys. Lett. 109, 041601 (2016)
https://doi.org/10.1063/1.4959940
Published: July 2016
View articletitled, In situ surface and interface study of crystalline (3×1)-O on InAs
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Journal Articles

Erratum: “Band alignment of two-dimensional transition metal dichalcogenides: Application in tunnel field effect transistors” [Appl. Phys. Lett. 103 , 053513 (2013)]

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Cheng Gong, Hengji Zhang, Weihua Wang, Luigi Colombo, Robert M. Wallace, Kyeongjae Cho
Journal: Applied Physics Letters
Appl. Phys. Lett. 107, 139904 (2015)
https://doi.org/10.1063/1.4932088
Published: October 2015
View articletitled, Erratum: “Band alignment of two-dimensional transition metal dichalcogenides: Application in tunnel field effect transistors” [Appl. Phys. Lett. 103 , 053513 (2013)]
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Journal Articles

In situ plasma enhanced atomic layer deposition half cycle study of Al2O3 on AlGaN/GaN high electron mobility transistors

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Xiaoye Qin, Robert M. Wallace
Journal: Applied Physics Letters
Appl. Phys. Lett. 107, 081608 (2015)
https://doi.org/10.1063/1.4929818
Published: August 2015
View articletitled, In situ plasma enhanced atomic layer deposition half cycle study of Al2O3 on AlGaN/GaN high electron mobility transistors
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Includes: Supplementary data