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Journal Articles

Thermal budget study to simultaneously achieve low-temperature ( < 400  ° C) process and high endurance of ferroelectric Hf0.5Zr0.5O2 thin films

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Jongmug Kang, Seongbin Park, Hye Ryeon Park, Seungbin Lee, Jin-Hyun Kim, Minjong Lee, Dushyant M. Narayan, Jeong Gyu Yoo, Geon Park, Harrison Sejoon Kim, Yong Chan Jung, Rino Choi, Jiyoung Kim, Si Joon Kim
Journal: Applied Physics Letters
Appl. Phys. Lett. 126, 102903 (2025)
https://doi.org/10.1063/5.0256712
Published: March 2025
View articletitled, Thermal budget study to simultaneously achieve low-temperature ( &lt; 400  ° C) process and high endurance of ferroelectric Hf0.5Zr0.5O2 thin films
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Journal Articles

Robust low-temperature (350 °C) ferroelectric Hf0.5Zr0.5O2 fabricated using anhydrous H2O2 as the ALD oxidant

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Yong Chan Jung, Jin-Hyun Kim, Heber Hernandez-Arriaga, Jaidah Mohan, Su Min Hwang, Dan N. Le, Akshay Sahota, Harrison Sejoon Kim, Kihyun Kim, Rino Choi, Chang-Yong Nam, Daniel Alvarez, Jr., Jeffrey Spiegelman, Si Joon Kim, Jiyoung Kim
Journal: Applied Physics Letters
Appl. Phys. Lett. 121, 222901 (2022)
https://doi.org/10.1063/5.0126695
Published: November 2022
View articletitled, Robust low-temperature (350 °C) ferroelectric Hf0.5Zr0.5O2 fabricated using anhydrous H2O2 as the ALD oxidant
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Journal Articles

High wet-etch resistance SiO2 films deposited by plasma-enhanced atomic layer deposition with 1,1,1-tris(dimethylamino)disilane

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Su Min Hwang, Harrison Sejoon Kim, Dan N. Le, Akshay Sahota, Jaebeom Lee, Yong Chan Jung, Sang Woo Kim, Si Joon Kim, Rino Choi, Jinho Ahn, Byung Keun Hwang, Xiaobing Zhou, Jiyoung Kim
Journal: Journal of Vacuum Science & Technology A
J. Vac. Sci. Technol. A 40, 022406 (2022)
https://doi.org/10.1116/6.0001519
Published: February 2022
View articletitled, High wet-etch resistance SiO2 films deposited by plasma-enhanced atomic layer deposition with 1,1,1-tris(dimethylamino)disilane
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Journal Articles

Defect characterization in floating body transistors using a single pulse charge pumping method

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Manh-Cuong Nguyen, An Hoang-Thuy Nguyen, Jiyong Yim, Anh-Duy Nguyen, Mingyu Kim, Jeonghan Kim, Jongyeon Baek, Rino Choi
Journal: Journal of Vacuum Science & Technology B
J. Vac. Sci. Technol. B 39, 053205 (2021)
https://doi.org/10.1116/6.0001172
Published: September 2021
View articletitled, Defect characterization in floating body transistors using a single pulse charge pumping method
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Journal Articles

Electrical characterization of gate stack charge traps in floating body gate-all-around field-effect-transistors

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Manh-Cuong Nguyen, An Hoang-Thuy Nguyen, Jiyong Yim, Anh-Duy Nguyen, Mingyu Kim, Jeonghan Kim, Jongyeon Beak, Rino Choi
Journal: Journal of Vacuum Science & Technology B
J. Vac. Sci. Technol. B 39, 032203 (2021)
https://doi.org/10.1116/6.0000906
Published: April 2021
View articletitled, Electrical characterization of gate stack charge traps in floating body gate-all-around field-effect-transistors
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Journal Articles

A strategy to boost external quantum efficiency of organic light-emitting transistors

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Seong-Yong Cho, Sei-Yong Kim, Sohee Jeon, Rino Choi, Jeong-Hwan Lee
Journal: Applied Physics Letters
Appl. Phys. Lett. 115, 043301 (2019)
https://doi.org/10.1063/1.5094925
Published: July 2019
View articletitled, A strategy to boost external quantum efficiency of organic light-emitting transistors
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Includes: Supplementary data
Journal Articles

Effect of strontium doping on indium zinc oxide thin film transistors fabricated by low-temperature solution process

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Jin-Hyun Kim, Manh-Cuong Nguyen, An Hoang-Thuy Nguyen, Sang-Woo Kim, Su-Jin Choi, Jong-Gyu Cheon, Hyung-Min Ji, Kyoung-Moon Yu, Seong-Yong Cho, Rino Choi
Journal: Journal of Vacuum Science & Technology B
J. Vac. Sci. Technol. B 37, 032201 (2019)
https://doi.org/10.1116/1.5092286
Published: April 2019
View articletitled, Effect of strontium doping on indium zinc oxide thin film transistors fabricated by low-temperature solution process
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Journal Articles

Silver-doped tin oxide for electrical property enhancement in p-type channel thin film transistor

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An Hoang-Thuy Nguyen, Manh-Cuong Nguyen, Hyungmin Ji, Jonggyu Cheon, Kyoungmun Yu, Jinhyun Kim, Sangwoo Kim, Seongyong Cho, Rino Choi, Hoai Phuong Pham, Quang Trung Tran
Journal: Journal of Vacuum Science & Technology B
J. Vac. Sci. Technol. B 36, 062203 (2018)
https://doi.org/10.1116/1.5051419
Published: December 2018
View articletitled, Silver-doped tin oxide for electrical property enhancement in p-type channel thin film transistor
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Journal Articles

Improvement in the device performance of tin-doped indium oxide transistor by oxygen high pressure annealing at 150 °C

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Se Yeob Park, Kwang Hwan Ji, Hong Yoon Jung, Ji-In Kim, Rino Choi, Kyoung Seok Son, Myung Kwan Ryu, Sangyoon Lee, Jae Kyeong Jeong
Journal: Applied Physics Letters
Appl. Phys. Lett. 100, 162108 (2012)
https://doi.org/10.1063/1.4704926
Published: April 2012
View articletitled, Improvement in the device performance of tin-doped indium oxide transistor by oxygen high pressure annealing at 150 °C
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Journal Articles

Improvement in both mobility and bias stability of ZnSnO transistors by inserting ultra-thin InSnO layer at the gate insulator/channel interface

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Ji-In Kim, Kwang Hwan Ji, Hong Yoon Jung, Se Yeob Park, Rino Choi, Mi Jang, Hoichang Yang, Dae-Hwan Kim, Jong-Uk Bae, Chang Dong Kim, Jae Kyeong Jeong
Journal: Applied Physics Letters
Appl. Phys. Lett. 99, 122102 (2011)
https://doi.org/10.1063/1.3643054
Published: September 2011
View articletitled, Improvement in both mobility and bias stability of ZnSnO transistors by inserting ultra-thin InSnO layer at the gate insulator/channel interface
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Journal Articles

Bias polarity dependence of charge trapping behaviours in La-incorporated hafnium-based dielectric

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Tae-Young Jang, Dong-Hyoub Kim, Jungwoo Kim, Jun Suk Chang, Cuong Nguyen Manh, Musarrat Hasan, Jae Kyeong Jeong, Hoichang Yang, Hokyung Park, Rino Choi
Journal: Applied Physics Letters
Appl. Phys. Lett. 99, 082905 (2011)
https://doi.org/10.1063/1.3624922
Published: August 2011
View articletitled, Bias polarity dependence of charge trapping behaviours in La-incorporated hafnium-based dielectric
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Journal Articles

Fast transient charging at the graphene/ SiO 2 interface causing hysteretic device characteristics

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Young Gon Lee, Chang Goo Kang, Uk Jin Jung, Jin Ju Kim, Hyeon Jun Hwang, Hyun-Jong Chung, Sunae Seo, Rino Choi, Byoung Hun Lee
Journal: Applied Physics Letters
Appl. Phys. Lett. 98, 183508 (2011)
https://doi.org/10.1063/1.3588033
Published: May 2011
View articletitled, Fast transient charging at the graphene/ SiO 2 interface causing hysteretic device characteristics
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Journal Articles

Effect of high-pressure oxygen annealing on negative bias illumination stress-induced instability of InGaZnO thin film transistors

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Kwang Hwan Ji, Ji-In Kim, Hong Yoon Jung, Se Yeob Park, Rino Choi, Un Ki Kim, Cheol Seong Hwang, Daeseok Lee, Hyungsang Hwang, Jae Kyeong Jeong
Journal: Applied Physics Letters
Appl. Phys. Lett. 98, 103509 (2011)
https://doi.org/10.1063/1.3564882
Published: March 2011
View articletitled, Effect of high-pressure oxygen annealing on negative bias illumination stress-induced instability of InGaZnO thin film transistors
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Includes: Supplementary data
Journal Articles

Performance and reliability analysis of p -type metal-oxide-semiconductor field effect transistors with various combinations of Ru and Al gate metal

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Hong Bae Park, Chang Seo Park, Chang Yong Kang, Seung-Chul Song, Byoung Hun Lee, Tea Wan Kim, Tae-Young Jang, Dong-Hyoub Kim, Jae Kyeong Jeong, Rino Choi
Journal: Journal of Vacuum Science & Technology B
J. Vac. Sci. Technol. B 28, 1267–1270 (2010)
https://doi.org/10.1116/1.3514103
Published: November 2010
View articletitled, Performance and reliability analysis of p -type metal-oxide-semiconductor field effect transistors with various combinations of Ru and Al gate metal
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Journal Articles

The impact of gate dielectric materials on the light-induced bias instability in Hf–In–Zn–O thin film transistor

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Jang-Yeon Kwon, Ji Sim Jung, Kyoung Seok Son, Kwang-Hee Lee, Joon Seok Park, Tae Sang Kim, Jin-Seong Park, Rino Choi, Jae Kyeong Jeong, Bonwon Koo, Sang Yoon Lee
Journal: Applied Physics Letters
Appl. Phys. Lett. 97, 183503 (2010)
https://doi.org/10.1063/1.3513400
Published: November 2010
View articletitled, The impact of gate dielectric materials on the light-induced bias instability in Hf–In–Zn–O thin film transistor
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Journal Articles

Characterization of fast charge trapping in bias temperature instability in metal-oxide-semiconductor field effect transistor with high dielectric constant

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Minseok Jo, Seonghyun Kim, Joonmyoung Lee, Seungjae Jung, Ju-Bong Park, Hyung-Suk Jung, Rino Choi, Hyunsang Hwang
Journal: Applied Physics Letters
Appl. Phys. Lett. 96, 142110 (2010)
https://doi.org/10.1063/1.3384999
Published: April 2010
View articletitled, Characterization of fast charge trapping in bias temperature instability in metal-oxide-semiconductor field effect transistor with high dielectric constant
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Journal Articles

The effect of moisture on the photon-enhanced negative bias thermal instability in Ga–In–Zn–O thin film transistors

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Kwang-Hee Lee, Ji Sim Jung, Kyoung Seok Son, Joon Seok Park, Tae Sang Kim, Rino Choi, Jae Kyeong Jeong, Jang-Yeon Kwon, Bonwon Koo, Sangyun Lee
Journal: Applied Physics Letters
Appl. Phys. Lett. 95, 232106 (2009)
https://doi.org/10.1063/1.3272015
Published: December 2009
View articletitled, The effect of moisture on the photon-enhanced negative bias thermal instability in Ga–In–Zn–O thin film transistors
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Journal Articles

Effects of a Gd capping layer on electrical characteristics of metal-oxide-semiconductor field effect transistors with a TaC gate electrode and a HfSiON gate dielectric

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Hong Bae Park, Chang Seo Park, Chang Yong Kang, Seung-Chul Song, Byoung Hun Lee, Tae-Young Jang, Tea Wan Kim, Jae Kyeong Jeong, Rino Choi
Journal: Applied Physics Letters
Appl. Phys. Lett. 95, 192113 (2009)
https://doi.org/10.1063/1.3264086
Published: November 2009
View articletitled, Effects of a Gd capping layer on electrical characteristics of metal-oxide-semiconductor field effect transistors with a TaC gate electrode and a HfSiON gate dielectric
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Journal Articles

Stress field analysis to understand the breakdown characteristics of stacked high- k dielectrics

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Byoung Hun Lee, Changyong Kang, Rino Choi, Hi-Deok Lee, Gennadi Bersuker
Journal: Applied Physics Letters
Appl. Phys. Lett. 94, 162904 (2009)
https://doi.org/10.1063/1.3122924
Published: April 2009
View articletitled, Stress field analysis to understand the breakdown characteristics of stacked high- k dielectrics
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Journal Articles

Hot carrier degradation in Hf Si O N ∕ Ti N fin shaped field effect transistor with different substrate orientations

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Chadwin D. Young, Ji-Woon Yang, Kenneth Matthews, Sagar Suthram, Muhammad Mustafa Hussain, Gennadi Bersuker, Casey Smith, Rusty Harris, Rino Choi, Byoung Hun Lee, Hsing-Huang Tseng
Journal: Journal of Vacuum Science & Technology B
J. Vac. Sci. Technol. B 27, 468–471 (2009)
https://doi.org/10.1116/1.3072919
Published: February 2009
View articletitled, Hot carrier degradation in Hf Si O N ∕ Ti N fin shaped field effect transistor with different substrate orientations
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