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Journal Articles

High performance Ge_0.89Sn_0.11 photodiodes for low-cost shortwave infrared imaging

Huong Tran, Thach Pham, Wei Du, Yang Zhang, Perry C. Grant, Joshua M. Grant, Greg Sun, Richard A. Soref, Joe Margetis, John Tolle, Baohua Li, Mansour Mortazavi, Shui-Qing Yu

J. Appl. Phys. 124, 013101 (2018)

https://doi.org/10.1063/1.5020510

Published: July 2018

View article titled, High performance Ge0.89Sn0.11 photodiodes for low-cost shortwave infrared imaging

Journal Articles

Direct bandgap type-I GeSn/GeSn quantum well on a GeSn- and Ge- buffered Si substrate

Perry C. Grant, Joe Margetis, Yiyin Zhou, Wei Dou, Grey Abernathy, Andrian Kuchuk, Wei Du, Baohua Li, John Tolle, Jifeng Liu, Greg Sun, Richard A. Soref, Mansour Mortazavi, Shui-Qing Yu

AIP Advances 8, 025104 (2018)

https://doi.org/10.1063/1.5020035

Published: February 2018

View article titled, Direct bandgap type-I GeSn/GeSn quantum well on a GeSn- and Ge- buffered Si substrate

Journal Articles

Investigation of optical transitions in a SiGeSn/GeSn/SiGeSn single quantum well structure

Wei Du, Seyed Amir Ghetmiri, Joe Margetis, Sattar Al-Kabi, Yiyin Zhou, Jifeng Liu, Greg Sun, Richard A. Soref, John Tolle, Baohua Li, Mansour Mortazavi, Shui-Qing Yu

J. Appl. Phys. 122, 123102 (2017)

https://doi.org/10.1063/1.4986341

Published: September 2017

View article titled, Investigation of optical transitions in a SiGeSn/GeSn/SiGeSn single quantum well structure

Journal Articles

An optically pumped 2.5 μm GeSn laser on Si operating at 110 K

Sattar Al-Kabi, Seyed Amir Ghetmiri, Joe Margetis, Thach Pham, Yiyin Zhou, Wei Dou, Bria Collier, Randy Quinde, Wei Du, Aboozar Mosleh, Jifeng Liu, Greg Sun, Richard A. Soref, John Tolle, Baohua Li, Mansour Mortazavi, Hameed A. Naseem, Shui-Qing Yu

Appl. Phys. Lett. 109, 171105 (2016)

https://doi.org/10.1063/1.4966141

Published: October 2016

View article titled, An optically pumped 2.5 μm GeSn laser on Si operating at 110 K

Includes: Supplementary data

Journal Articles

Ultra-compact and highly efficient silicon polarization splitter and rotator

Yong Zhang, Yu He, Xinhong Jiang, Boyu Liu, Ciyuan Qiu, Yikai Su, Richard A. Soref

APL Photonics 1, 091304 (2016)

https://doi.org/10.1063/1.4965832

Published: October 2016

View article titled, Ultra-compact and highly efficient silicon polarization splitter and rotator

Journal Articles

Systematic study of Ge_1−xSn_x absorption coefficient and refractive index for the device applications of Si-based optoelectronics

Huong Tran, Wei Du, Seyed A. Ghetmiri, Aboozar Mosleh, Greg Sun, Richard A. Soref, Joe Margetis, John Tolle, Baohua Li, Hameed A. Naseem, Shui-Qing Yu

J. Appl. Phys. 119, 103106 (2016)

https://doi.org/10.1063/1.4943652

Published: March 2016

View article titled, Systematic study of Ge1−xSnx absorption coefficient and refractive index for the device applications of Si-based optoelectronics

Journal Articles

Si_yGe_1−x−ySn_x films grown on Si using a cold-wall ultrahigh-vacuum chemical vapor deposition system

Aboozar Mosleh, Murtadha Alher, Wei Du, Larry C. Cousar, Seyed Amir Ghetmiri, Sattar Al-Kabi, Wei Dou, Perry C. Grant, Greg Sun, Richard A. Soref, Baohua Li, Hameed A. Naseem, Shui-Qing Yu

J. Vac. Sci. Technol. B 34, 011201 (2016)

https://doi.org/10.1116/1.4936892

Published: December 2015

View article titled, SiyGe1−x−ySnx films grown on Si using a cold-wall ultrahigh-vacuum chemical vapor deposition system

Journal Articles

Direct-bandgap GeSn grown on silicon with 2230 nm photoluminescence

Seyed Amir Ghetmiri, Wei Du, Joe Margetis, Aboozar Mosleh, Larry Cousar, Benjamin R. Conley, Lucas Domulevicz, Amjad Nazzal, Greg Sun, Richard A. Soref, John Tolle, Baohua Li, Hameed A. Naseem, Shui-Qing Yu

Appl. Phys. Lett. 105, 151109 (2014)

https://doi.org/10.1063/1.4898597

Published: October 2014

View article titled, Direct-bandgap GeSn grown on silicon with 2230 nm photoluminescence

Journal Articles

Shortwave-infrared photoluminescence from Ge_1−xSn_x thin films on silicon

Seyed Amir Ghetmiri, Wei Du, Benjamin R. Conley, Aboozar Mosleh, Amjad Nazzal, Greg Sun, Richard A. Soref, Joe Margetis, John Tolle, Hameed A. Naseem, Shui-Qing Yu

J. Vac. Sci. Technol. B 32, 060601 (2014)

https://doi.org/10.1116/1.4897917

Published: October 2014

View article titled, Shortwave-infrared photoluminescence from Ge1−xSnx thin films on silicon

Journal Articles

Competition of optical transitions between direct and indirect bandgaps in Ge_1−xSn_x

Wei Du, Seyed A. Ghetmiri, Benjamin R. Conley, Aboozar Mosleh, Amjad Nazzal, Richard A. Soref, Greg Sun, John Tolle, Joe Margetis, Hameed A. Naseem, Shui-Qing Yu

Appl. Phys. Lett. 105, 051104 (2014)

https://doi.org/10.1063/1.4892302

Published: August 2014

View article titled, Competition of optical transitions between direct and indirect bandgaps in Ge1−xSnx

Journal Articles

Room-temperature electroluminescence from Ge/Ge_1-xSn_x/Ge diodes on Si substrates

Wei Du, Yiyin Zhou, Seyed A. Ghetmiri, Aboozar Mosleh, Benjamin R. Conley, Amjad Nazzal, Richard A. Soref, Greg Sun, John Tolle, Joe Margetis, Hameed A. Naseem, Shui-Qing Yu

Appl. Phys. Lett. 104, 241110 (2014)

https://doi.org/10.1063/1.4884380

Published: June 2014

View article titled, Room-temperature electroluminescence from Ge/Ge1-xSnx/Ge diodes on Si substrates

Journal Articles

Practicable enhancement of spontaneous emission using surface plasmons

Greg Sun, Jacob B. Khurgin, Richard A. Soref

Appl. Phys. Lett. 90, 111107 (2007)

https://doi.org/10.1063/1.2539745

Published: March 2007

View article titled, Practicable enhancement of spontaneous emission using surface plasmons

Journal Articles

Design of a GaN ∕ AlGaN intersubband Raman laser electrically tunable over the 3 – 5 μ m atmospheric transmission window

Greg Sun, Jacob B. Khurgin, Richard A. Soref

J. Appl. Phys. 99, 033103 (2006)

https://doi.org/10.1063/1.2169349

Published: February 2006

View article titled, Design of a GaN ∕ AlGaN intersubband Raman laser electrically tunable over the 3 – 5 μ m atmospheric transmission window

Journal Articles

Nonlinear all-optical Ga N ∕ Al Ga N multi-quantum-well devices for 100 Gb ∕ s applications at λ = 1.55 μ m

Greg Sun, Jacob B. Khurgin, Richard A. Soref

Appl. Phys. Lett. 87, 201108 (2005)

https://doi.org/10.1063/1.2132084

Published: November 2005

View article titled, Nonlinear all-optical Ga N ∕ Al Ga N multi-quantum-well devices for 100 Gb ∕ s applications at λ = 1.55 μ m

Journal Articles

Reduced threshold current of a quantum dot laser in a short period superlattice of indirect-band gap

Gregory Sun, Richard A. Soref, Jacob B. Khurgin

Appl. Phys. Lett. 84, 3861–3863 (2004)

https://doi.org/10.1063/1.1751606

Published: May 2004

View article titled, Reduced threshold current of a quantum dot laser in a short period superlattice of indirect-band gap

Journal Articles

Terahertz gain in a SiGe/Si quantum staircase utilizing the heavy-hole inverted effective mass

Richard A. Soref, Gregory Sun

Appl. Phys. Lett. 79, 3639–3641 (2001)

https://doi.org/10.1063/1.1421079

Published: November 2001

View article titled, Terahertz gain in a SiGe/Si quantum staircase utilizing the heavy-hole inverted effective mass

Journal Articles

Phonon-pumped terahertz gain in n-type GaAs/AlGaAs superlattices

Gregory Sun, Richard A. Soref

Appl. Phys. Lett. 78, 3520–3522 (2001)

https://doi.org/10.1063/1.1376432

Published: May 2001

View article titled, Phonon-pumped terahertz gain in n-type GaAs/AlGaAs superlattices

Journal Articles

Progress toward silicon-based intersubband lasers

Richard A. Soref, Lionel Friedman, L. C. Lew Yan Voon, L. R. Ram-Mohan, Gregory Sun

J. Vac. Sci. Technol. B 16, 1525–1528 (1998)

https://doi.org/10.1116/1.589979

Published: May 1998

View article titled, Progress toward silicon-based intersubband lasers

Journal Articles

Silicon-based interminiband infrared laser

Lionel Friedman, Richard A. Soref, Gregory Sun

J. Appl. Phys. 83, 3480–3485 (1998)

https://doi.org/10.1063/1.366559

Published: April 1998

View article titled, Silicon-based interminiband infrared laser

Journal Articles

Silicon‐based group IV heterostructures for optoelectronic applications

Richard A. Soref

J. Vac. Sci. Technol. A 14, 913–918 (1996)

https://doi.org/10.1116/1.580414

Published: May 1996

View article titled, Silicon‐based group IV heterostructures for optoelectronic applications

NARROW

Topics

High performance Ge_0.89Sn_0.11 photodiodes for low-cost shortwave infrared imaging

Direct bandgap type-I GeSn/GeSn quantum well on a GeSn- and Ge- buffered Si substrate

Investigation of optical transitions in a SiGeSn/GeSn/SiGeSn single quantum well structure

An optically pumped 2.5 μm GeSn laser on Si operating at 110 K

Ultra-compact and highly efficient silicon polarization splitter and rotator

Systematic study of Ge_1−xSn_x absorption coefficient and refractive index for the device applications of Si-based optoelectronics

Si_yGe_1−x−ySn_x films grown on Si using a cold-wall ultrahigh-vacuum chemical vapor deposition system

Direct-bandgap GeSn grown on silicon with 2230 nm photoluminescence

Shortwave-infrared photoluminescence from Ge_1−xSn_x thin films on silicon

Competition of optical transitions between direct and indirect bandgaps in Ge_1−xSn_x

Room-temperature electroluminescence from Ge/Ge_1-xSn_x/Ge diodes on Si substrates

Practicable enhancement of spontaneous emission using surface plasmons

Design of a GaN ∕ AlGaN intersubband Raman laser electrically tunable over the 3 – 5 μ m atmospheric transmission window

Nonlinear all-optical Ga N ∕ Al Ga N multi-quantum-well devices for 100 Gb ∕ s applications at λ = 1.55 μ m

Reduced threshold current of a quantum dot laser in a short period superlattice of indirect-band gap

Terahertz gain in a SiGe/Si quantum staircase utilizing the heavy-hole inverted effective mass

Phonon-pumped terahertz gain in n-type GaAs/AlGaAs superlattices

Progress toward silicon-based intersubband lasers

Silicon-based interminiband infrared laser

Silicon‐based group IV heterostructures for optoelectronic applications

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