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Journal Articles

Full factorial analysis of gradual switching in thermally oxidized memristive devices

P. Stasner, T. Hennen, E. Gorbunova, A. Garcia Munoz, R. Waser, D. J. Wouters
Journal: Journal of Applied Physics
J. Appl. Phys. 135, 234901 (2024)
https://doi.org/10.1063/5.0214036
Published: June 2024
View article titled, Full factorial analysis of gradual switching in thermally oxidized memristive devices
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Journal Articles

Accurate evaluation method for HRS retention of VCM ReRAM

N. Kopperberg, D. J. Wouters, R. Waser, S. Menzel, S. Wiefels
Journal: APL Materials
APL Mater. 12, 031112 (2024)
https://doi.org/10.1063/5.0188573
Published: March 2024
View article titled, Accurate evaluation method for HRS retention of VCM ReRAM
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Journal Articles

Stabilizing amplifier with a programmable load line for characterization of nanodevices with negative differential resistance

Editor’s Pick
T. Hennen, E. Wichmann, R. Waser, D. J. Wouters, D. Bedau
Journal: Review of Scientific Instruments
Rev. Sci. Instrum. 93, 024705 (2022)
https://doi.org/10.1063/5.0080532
Published: February 2022
View article titled, Stabilizing amplifier with a programmable load line for characterization of nanodevices with negative differential resistance
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Journal Articles

Erratum: “Study of the SET switching event of VCM-based memories on a picosecond timescale” [J. Appl. Phys. 127, 204501 (2020)]

M. von Witzleben, T. Hennen, A. Kindsmüller, R. Waser, S. Menzel, U. Böttger
Journal: Journal of Applied Physics
J. Appl. Phys. 130, 169901 (2021)
https://doi.org/10.1063/5.0070134
Published: October 2021
View article titled, Erratum: “Study of the SET switching event of VCM-based memories on a picosecond timescale” [J. Appl. Phys. 127, 204501 (2020)]
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Journal Articles

Current-limiting amplifier for high speed measurement of resistive switching data

T. Hennen, E. Wichmann, A. Elias, J. Lille, O. Mosendz, R. Waser, D. J. Wouters, D. Bedau
Journal: Review of Scientific Instruments
Rev. Sci. Instrum. 92, 054701 (2021)
https://doi.org/10.1063/5.0047571
Published: May 2021
View article titled, Current-limiting amplifier for high speed measurement of resistive switching data
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Journal Articles

Study of the SET switching event of VCM-based memories on a picosecond timescale

M. von Witzleben, T. Hennen, A. Kindsmüller, S. Menzel, R. Waser, U. Böttger
Journal: Journal of Applied Physics
J. Appl. Phys. 127, 204501 (2020)
https://doi.org/10.1063/5.0003840
Published: May 2020
View article titled, Study of the SET switching event of VCM-based memories on a picosecond timescale
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Includes: Supplementary data
Journal Articles

Analyses of a 1-layer neuromorphic network using memristive devices with non-continuous resistance levels

A. Siemon, S. Ferch, A. Heittmann, R. Waser, D. J. Wouters, S. Menzel
Journal: APL Materials
APL Mater. 7, 091110 (2019)
https://doi.org/10.1063/1.5108658
Published: September 2019
View article titled, Analyses of a 1-layer neuromorphic network using memristive devices with non-continuous resistance levels
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Includes: Supplementary data
Journal Articles

Exploiting the switching dynamics of HfO2-based ReRAM devices for reliable analog memristive behavior

F. Cüppers, S. Menzel, C. Bengel, A. Hardtdegen, M. von Witzleben, U. Böttger, R. Waser, S. Hoffmann-Eifert
Journal: APL Materials
APL Mater. 7, 091105 (2019)
https://doi.org/10.1063/1.5108654
Published: September 2019
View article titled, Exploiting the switching dynamics of HfO<sub>2</sub>-based ReRAM devices for reliable analog memristive behavior
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Includes: Supplementary data
Journal Articles

Valence change detection in memristive oxide based heterostructure cells by hard X-ray photoelectron emission spectroscopy

A. Kindsmüller, C. Schmitz, C. Wiemann, K. Skaja, D. J. Wouters, R. Waser, C. M. Schneider, R. Dittmann
Journal: APL Materials
APL Mater. 6, 046106 (2018)
https://doi.org/10.1063/1.5026063
Published: April 2018
View article titled, Valence change detection in memristive oxide based heterostructure cells by hard X-ray photoelectron emission spectroscopy
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Includes: Supplementary data
Journal Articles

Interaction between depolarization effects, interface layer, and fatigue behavior in PZT thin film capacitors

U. Böttger, R. Waser
Journal: Journal of Applied Physics
J. Appl. Phys. 122, 024105 (2017)
https://doi.org/10.1063/1.4992812
Published: July 2017
View article titled, Interaction between depolarization effects, interface layer, and fatigue behavior in PZT thin film capacitors
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Journal Articles

The influence of non-stoichiometry on the switching kinetics of strontium-titanate ReRAM devices

K. Fleck, N. Aslam, S. Hoffmann-Eifert, V. Longo, F. Roozeboom, W. M. M. Kessels, U. Böttger, R. Waser, S. Menzel
Journal: Journal of Applied Physics
J. Appl. Phys. 120, 244502 (2016)
https://doi.org/10.1063/1.4972833
Published: December 2016
View article titled, The influence of non-stoichiometry on the switching kinetics of strontium-titanate ReRAM devices
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Journal Articles

Hafnium carbide formation in oxygen deficient hafnium oxide thin films

C. Rodenbücher, E. Hildebrandt, K. Szot, S. U. Sharath, J. Kurian, P. Komissinskiy, U. Breuer, R. Waser, L. Alff
Journal: Applied Physics Letters
Appl. Phys. Lett. 108, 252903 (2016)
https://doi.org/10.1063/1.4954714
Published: June 2016
View article titled, Hafnium carbide formation in oxygen deficient hafnium oxide thin films
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Journal Articles

Probing orbital ordering in LaVO3 epitaxial films by Raman scattering

I. Vrejoiu, C. Himcinschi, L. Jin, C.-L. Jia, N. Raab, J. Engelmayer, R. Waser, R. Dittmann, P. H. M. van Loosdrecht
Journal: APL Materials
APL Mater. 4, 046103 (2016)
https://doi.org/10.1063/1.4945658
Published: April 2016
View article titled, Probing orbital ordering in LaVO<sub>3</sub> epitaxial films by Raman scattering
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Journal Articles

Impact of composition and crystallization behavior of atomic layer deposited strontium titanate films on the resistive switching of Pt/STO/TiN devices

N. Aslam, V. Longo, C. Rodenbücher, F. Roozeboom, W. M. M. Kessels, K. Szot, R. Waser, S. Hoffmann-Eifert
Journal: Journal of Applied Physics
J. Appl. Phys. 116, 064503 (2014)
https://doi.org/10.1063/1.4891831
Published: August 2014
View article titled, Impact of composition and crystallization behavior of atomic layer deposited strontium titanate films on the resistive switching of Pt/STO/TiN devices
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Journal Articles

Chemical solution deposition of ferroelectric yttrium-doped hafnium oxide films on platinum electrodes

S. Starschich, D. Griesche, T. Schneller, R. Waser, U. Böttger
Journal: Applied Physics Letters
Appl. Phys. Lett. 104, 202903 (2014)
https://doi.org/10.1063/1.4879283
Published: May 2014
View article titled, Chemical solution deposition of ferroelectric yttrium-doped hafnium oxide films on platinum electrodes
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Journal Articles

Inhomogeneity of donor doping in SrTiO3 substrates studied by fluorescence-lifetime imaging microscopy

C. Rodenbücher, T. Gensch, W. Speier, U. Breuer, M. Pilch, H. Hardtdegen, M. Mikulics, E. Zych, R. Waser, K. Szot
Journal: Applied Physics Letters
Appl. Phys. Lett. 103, 162904 (2013)
https://doi.org/10.1063/1.4825367
Published: October 2013
View article titled, Inhomogeneity of donor doping in SrTiO<sub>3</sub> substrates studied by fluorescence-lifetime imaging microscopy
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Journal Articles

Evidence for multifilamentary valence changes in resistive switching SrTiO3 devices detected by transmission X-ray microscopy

A. Koehl, H. Wasmund, A. Herpers, P. Guttmann, S. Werner, K. Henzler, H. Du, J. Mayer, R. Waser, R. Dittmann
Journal: APL Materials
APL Mater. 1, 042102 (2013)
https://doi.org/10.1063/1.4822438
Published: October 2013
View article titled, Evidence for multifilamentary valence changes in resistive switching SrTiO<sub>3</sub> devices detected by transmission X-ray microscopy
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Includes: Supplementary data
Journal Articles

Structure and thermoelectric properties of EuTi(O,N)3 ± δ

L. Sagarna, K. Z. Rushchanskii, A. Maegli, S. Yoon, S. Populoh, A. Shkabko, S. Pokrant, M. Ležaić, R. Waser, A. Weidenkaff
Journal: Journal of Applied Physics
J. Appl. Phys. 114, 033701 (2013)
https://doi.org/10.1063/1.4813098
Published: July 2013
View article titled, Structure and thermoelectric properties of EuTi(O,N)<sub>3 ±</sub> <sub><em>δ</em></sub>
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Journal Articles

Identification of screw dislocations as fast-forming sites in Fe-doped SrTiO3

Ch. Lenser, Z. Connell, A. Kovács, R. Dunin-Borkowski, A. Köhl, R. Waser, R. Dittmann
Journal: Applied Physics Letters
Appl. Phys. Lett. 102, 183504 (2013)
https://doi.org/10.1063/1.4804364
Published: May 2013
View article titled, Identification of screw dislocations as fast-forming sites in Fe-doped SrTiO<sub>3</sub>
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Journal Articles

Quasi-two-dimensional conducting layer on TiO2 (110) introduced by sputtering as a template for resistive switching

M. Rogala, Z. Klusek, C. Rodenbücher, R. Waser, K. Szot
Journal: Applied Physics Letters
Appl. Phys. Lett. 102, 131604 (2013)
https://doi.org/10.1063/1.4801437
Published: April 2013
View article titled, Quasi-two-dimensional conducting layer on TiO<sub>2</sub> (110) introduced by sputtering as a template for resistive switching
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