1-9 of 9
R. S. Srivastava
Close
Save search
Follow your search
Access your saved searches in your account
Close Modal
Sort by
Journal Articles

Generation and annihilation of traps in metal‐oxide‐semiconductor devices after negative air corona charging

Available to Purchase
Ila Prasad, R. S. Srivastava
Journal: Journal of Applied Physics
J. Appl. Phys. 74, 359–363 (1993)
https://doi.org/10.1063/1.354117
Published: July 1993
View articletitled, Generation and annihilation of traps in metal‐oxide‐semiconductor devices after negative air corona charging
Open the PDF for Generation and annihilation of traps in metal‐oxide‐semiconductor devices after negative air corona charging in another window
Journal Articles

Single‐frequency method for the determination of interface state density

Available to Purchase
Amita Tolpadi, R. S. Srivastava
Journal: Review of Scientific Instruments
Rev. Sci. Instrum. 63, 5419–5425 (1992)
https://doi.org/10.1063/1.1143412
Published: November 1992
View articletitled, Single‐frequency method for the determination of interface state density
Open the PDF for Single‐frequency method for the determination of interface state density in another window
Journal Articles

Theoretical study of the photovoltaic properties of polycrystalline silicon

Available to Purchase
D. P. Joshi, R. S. Srivastava
Journal: Journal of Applied Physics
J. Appl. Phys. 59, 2849–2858 (1986)
https://doi.org/10.1063/1.336941
Published: April 1986
View articletitled, Theoretical study of the photovoltaic properties of polycrystalline silicon
Open the PDF for Theoretical study of the photovoltaic properties of polycrystalline silicon in another window
Journal Articles

Carrier mobility in polycrystalline silicon under solar illumination

Available to Purchase
D. P. Joshi, R. S. Srivastava
Journal: Journal of Applied Physics
J. Appl. Phys. 56, 2375–2378 (1984)
https://doi.org/10.1063/1.334255
Published: October 1984
View articletitled, Carrier mobility in polycrystalline silicon under solar illumination
Open the PDF for Carrier mobility in polycrystalline silicon under solar illumination in another window
Journal Articles

Interface state generation by alternating voltage stress under visible irradiation at the silicon‐silicon dioxide interface

Available to Purchase
R. J. Singh, R. S. Srivastava
Journal: Journal of Applied Physics
J. Appl. Phys. 54, 1162–1164 (1983)
https://doi.org/10.1063/1.332092
Published: February 1983
View articletitled, Interface state generation by alternating voltage stress under visible irradiation at the silicon‐silicon dioxide interface
Open the PDF for Interface state generation by alternating voltage stress under visible irradiation at the silicon‐silicon dioxide interface in another window
Journal Articles

A new structure for a semiconductor‐insulator‐semiconductor solar cell

Available to Purchase
K. Sen, R. S. Srivastava
Journal: Journal of Applied Physics
J. Appl. Phys. 52, 7309–7312 (1981)
https://doi.org/10.1063/1.328720
Published: December 1981
View articletitled, A new structure for a semiconductor‐insulator‐semiconductor solar cell
Open the PDF for A new structure for a semiconductor‐insulator‐semiconductor solar cell in another window
Journal Articles

Recrystallization of vacuum‐deposited ultrathin CdS films by the H2S heat‐treatment process

Available to Purchase
R. S. Srivastava, K. Prakash, M. V. Badwe
Journal: Journal of Applied Physics
J. Appl. Phys. 50, 7245–7246 (1979)
https://doi.org/10.1063/1.325841
Published: November 1979
View articletitled, Recrystallization of vacuum‐deposited ultrathin CdS films by the H2S heat‐treatment process
Open the PDF for Recrystallization of vacuum‐deposited ultrathin CdS films by the H2S heat‐treatment process in another window
Journal Articles

Origin of magnetization‐induced uniaxial anisotropy in evaporated Fe‐Co and Ni‐Co films

Available to Purchase
R. S. Srivastava
Journal: Journal of Applied Physics
J. Appl. Phys. 48, 1355–1358 (1977)
https://doi.org/10.1063/1.323730
Published: March 1977
View articletitled, Origin of magnetization‐induced uniaxial anisotropy in evaporated Fe‐Co and Ni‐Co films
Open the PDF for Origin of magnetization‐induced uniaxial anisotropy in evaporated Fe‐Co and Ni‐Co films in another window
Journal Articles

Interaction energy of dislocations with magnetization in evaporated films

Available to Purchase
R. S. Srivastava
Journal: Journal of Applied Physics
J. Appl. Phys. 45, 923–924 (1974)
https://doi.org/10.1063/1.1663339
Published: February 1974
View articletitled, Interaction energy of dislocations with magnetization in evaporated films
Open the PDF for Interaction energy of dislocations with magnetization in evaporated films in another window