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Journal Articles

Influence of carrier localization on photoluminescence emission from sub-monolayer quantum dot layers

Featured
T.-Y. Huang, T. Borrely, Y.-C. Yang, A. Alzeidan, G. M. Jacobsen, M. D. Teodoro, A. A. Quivy, R. S. Goldman
Journal: Applied Physics Letters
Appl. Phys. Lett. 125, 122108 (2024)
https://doi.org/10.1063/5.0219815
Published: September 2024
View article titled, Influence of carrier localization on photoluminescence emission from sub-monolayer quantum dot layers
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Journal Articles

Influence of excess silicon on polytype selection during metal-mediated epitaxy of GaN nanowires

A. Liu, Z. Xi, M. Li, J. C. Yang, L. Qi, R. S. Goldman
Journal: Applied Physics Letters
Appl. Phys. Lett. 125, 042107 (2024)
https://doi.org/10.1063/5.0210669
Published: July 2024
View article titled, Influence of excess silicon on polytype selection during metal-mediated epitaxy of GaN nanowires
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Journal Articles

Onset of tetrahedral interstitial formation in GaAsN alloys

J. J. P. Cooper, T. Jen, A. Novak, Z. Xi, L. Qi, F. U. Naab, Y. Q. Wang, R. S. Goldman
Journal: Applied Physics Letters
Appl. Phys. Lett. 124, 161108 (2024)
https://doi.org/10.1063/5.0192454
Published: April 2024
View article titled, Onset of tetrahedral interstitial formation in GaAsN alloys
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Includes: Supplementary data
Journal Articles

Influence of non-stoichiometry and local atomic environments on carrier transport in GaAs1 − x − yNxBiy alloys

J. W. Mitchell, C. M. Greenhill, T.-Y. Huang, T. Jen, Y.-C. Yang, K. Hammond, J. N. Heyman, R. S. Goldman
Journal: Applied Physics Letters
Appl. Phys. Lett. 124, 152108 (2024)
https://doi.org/10.1063/5.0187750
Published: April 2024
View article titled, Influence of non-stoichiometry and local atomic environments on carrier transport in GaAs<sub>1 − x − y</sub>N<sub>x</sub>Bi<sub>y</sub> alloys
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Includes: Supplementary data
Journal Articles

Probing conduction band offsets and confined states at GaAs/GaAsNBi heterointerfaces

T.-Y. Huang, J. Occena, C. Greenhill, T. Borrely, Y.-C. Yang, J. Hu, A. Chen, C. Zinn, K. Jenkins, L. Li, C. Kurdak, R. S. Goldman
Journal: Applied Physics Letters
Appl. Phys. Lett. 123, 192105 (2023)
https://doi.org/10.1063/5.0172295
Published: November 2023
View article titled, Probing conduction band offsets and confined states at GaAs/GaAsNBi heterointerfaces
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Includes: Supplementary data
Journal Articles

Influence of strain and dislocations on GaSb/GaAs quantum dots: From nested to staggered band alignment

B. C. McGuigan, A. S. Chang, C. Greenhill, H. T. Johnson, R. S. Goldman
Journal: Journal of Applied Physics
J. Appl. Phys. 131, 085703 (2022)
https://doi.org/10.1063/5.0070657
Published: February 2022
View article titled, Influence of strain and dislocations on GaSb/GaAs quantum dots: From nested to staggered band alignment
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Includes: Supplementary data
Journal Articles

Influence of gallium surface saturation on GaN nanowire polytype selection during molecular-beam epitaxy

H. Lu, S. Moniri, C. Reese, S. Jeon, A. Katcher, T. Hill, H. Deng, R. S. Goldman
Journal: Applied Physics Letters
Appl. Phys. Lett. 119, 031601 (2021)
https://doi.org/10.1063/5.0052659
Published: July 2021
View article titled, Influence of gallium surface saturation on GaN nanowire polytype selection during molecular-beam epitaxy
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Includes: Supplementary data
Journal Articles

Influence of electron irradiation and rapid thermal annealing on photoluminescence from GaAsNBi alloys

E.-M. Pavelescu, O. Ligor, J. Occena, C. Ticoş, A. Matei, R. L. Gavrilă, K. Yamane, A. Wakahara, R. S. Goldman
Journal: Applied Physics Letters
Appl. Phys. Lett. 117, 142106 (2020)
https://doi.org/10.1063/5.0027400
Published: October 2020
View article titled, Influence of electron irradiation and rapid thermal annealing on photoluminescence from GaAsNBi alloys
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Journal Articles

Influence of quantum dot morphology on the optical properties of GaSb/GaAs multilayers

C. Greenhill, A. S. Chang, E. S. Zech, S. Clark, G. Balakrishnan, R. S. Goldman
Journal: Applied Physics Letters
Appl. Phys. Lett. 116, 252107 (2020)
https://doi.org/10.1063/5.0011094
Published: June 2020
View article titled, Influence of quantum dot morphology on the optical properties of GaSb/GaAs multilayers
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Includes: Supplementary data
Journal Articles

Mechanisms of GaN quantum dot formation during nitridation of Ga droplets

H. Lu, C. Reese, S. Jeon, A. Sundar, Y. Fan, E. Rizzi, Y. Zhuo, L. Qi, R. S. Goldman
Journal: Applied Physics Letters
Appl. Phys. Lett. 116, 062107 (2020)
https://doi.org/10.1063/1.5133965
Published: February 2020
View article titled, Mechanisms of GaN quantum dot formation during nitridation of Ga droplets
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Includes: Supplementary data
Journal Articles

Morphological design of complex oxides during pulsed-laser deposition: The role of plasma-plume expansion

D. Del Gaudio, C. T. Boone, K. Sallans, E. Mason, A. J. Williamson, S. Yarlagadda, Y. Turkulets, J. T. Heron, I. Shalish, R. S. Goldman
Journal: Journal of Applied Physics
J. Appl. Phys. 126, 184301 (2019)
https://doi.org/10.1063/1.5119922
Published: November 2019
View article titled, Morphological design of complex oxides during pulsed-laser deposition: The role of plasma-plume expansion
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Journal Articles

Ion irradiation of III–V semiconductor surfaces: From self-assembled nanostructures to plasmonic crystals

Editor’s Pick
M. Kang, R. S. Goldman
Journal: Applied Physics Reviews
Appl. Phys. Rev. 6, 041307 (2019)
https://doi.org/10.1063/1.5079908
Published: October 2019
View article titled, Ion irradiation of III–V semiconductor surfaces: From self-assembled nanostructures to plasmonic crystals
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Journal Articles

Mapping the composition-dependence of the energy bandgap of GaAsNBi alloys

J. Occena, T. Jen, J. W. Mitchell, W. M. Linhart, E.-M. Pavelescu, R. Kudrawiec, Y. Q. Wang, R. S. Goldman
Journal: Applied Physics Letters
Appl. Phys. Lett. 115, 082106 (2019)
https://doi.org/10.1063/1.5057424
Published: August 2019
View article titled, Mapping the composition-dependence of the energy bandgap of GaAsNBi alloys
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Includes: Supplementary data
Journal Articles

Formation and properties of InGaN QDs: Influence of substrates

A. S. Chang, J. C. Walrath, T. Frost, C. Greenhill, J. Occena, A. Hazari, P. Bhattacharya, R. S. Goldman
Journal: Applied Physics Letters
Appl. Phys. Lett. 114, 062106 (2019)
https://doi.org/10.1063/1.5053856
Published: February 2019
View article titled, Formation and properties of InGaN QDs: Influence of substrates
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Journal Articles

Surfactant-induced chemical ordering of GaAsN:Bi

J. Occena, T. Jen, H. Lu, B. A. Carter, T. S. Jimson, A. G. Norman, R. S. Goldman
Journal: Applied Physics Letters
Appl. Phys. Lett. 113, 211602 (2018)
https://doi.org/10.1063/1.5045606
Published: November 2018
View article titled, Surfactant-induced chemical ordering of GaAsN:Bi
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Includes: Supplementary data
Journal Articles

Influence of surface nano-patterning on the placement of InAs quantum dots

D. Del Gaudio, L. K. Aagesen, S. Huang, T. M. Johnson, B. D. Faeth, H. Lu, R. M. Ziff, R. S. Goldman
Journal: Journal of Applied Physics
J. Appl. Phys. 124, 115307 (2018)
https://doi.org/10.1063/1.5008518
Published: September 2018
View article titled, Influence of surface nano-patterning on the placement of InAs quantum dots
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Journal Articles

Formation of embedded plasmonic Ga nanoparticle arrays and their influence on GaAs photoluminescence

M. Kang, S. Jeon, T. Jen, J.-E. Lee, V. Sih, R. S. Goldman
Journal: Journal of Applied Physics
J. Appl. Phys. 122, 033102 (2017)
https://doi.org/10.1063/1.4990946
Published: July 2017
View article titled, Formation of embedded plasmonic Ga nanoparticle arrays and their influence on GaAs photoluminescence
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Journal Articles

Bi-enhanced N incorporation in GaAsNBi alloys

J. Occena, T. Jen, E. E. Rizzi, T. M. Johnson, J. Horwath, Y. Q. Wang, R. S. Goldman
Journal: Applied Physics Letters
Appl. Phys. Lett. 110, 242102 (2017)
https://doi.org/10.1063/1.4984227
Published: June 2017
View article titled, Bi-enhanced N incorporation in GaAsNBi alloys
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Journal Articles

Influence of surface reconstruction on dopant incorporation and transport properties of GaAs(Bi) alloys

R. L. Field, III, J. Occena, T. Jen, D. Del Gaudio, B. Yarlagadda, C. Kurdak, R. S. Goldman
Journal: Applied Physics Letters
Appl. Phys. Lett. 109, 252105 (2016)
https://doi.org/10.1063/1.4971998
Published: December 2016
View article titled, Influence of surface reconstruction on dopant incorporation and transport properties of GaAs(Bi) alloys
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Journal Articles

Origins of enhanced thermoelectric power factor in topologically insulating Bi0.64Sb1.36Te3 thin films

Wei Liu, Hang Chi, J. C. Walrath, A. S. Chang, Vladimir A. Stoica, Lynn Endicott, Xinfeng Tang, R. S. Goldman, Ctirad Uher
Journal: Applied Physics Letters
Appl. Phys. Lett. 108, 043902 (2016)
https://doi.org/10.1063/1.4940923
Published: January 2016
View article titled, Origins of enhanced thermoelectric power factor in topologically insulating Bi<sub>0.64</sub>Sb<sub>1.36</sub>Te<sub>3</sub> thin films
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