1-5 of 5
R. Rooyackers
Close
Save search
Follow your search
Access your saved searches in your account
Close Modal
Sort by
Journal Articles

InGaAs tunnel FET with sub-nanometer EOT and sub-60 mV/dec sub-threshold swing at room temperature

Available to Purchase
A. Alian, Y. Mols, C. C. M. Bordallo, D. Verreck, A. Verhulst, A. Vandooren, R. Rooyackers, P. G. D. Agopian, J. A. Martino, A. Thean, D. Lin, D. Mocuta, N. Collaert
Journal: Applied Physics Letters
Appl. Phys. Lett. 109, 243502 (2016)
https://doi.org/10.1063/1.4971830
Published: December 2016
View article titled, InGaAs tunnel FET with sub-nanometer EOT and sub-60 mV/dec sub-threshold swing at room temperature
Open the PDF for InGaAs tunnel FET with sub-nanometer EOT and sub-60 mV/dec sub-threshold swing at room temperature in another window
Journal Articles

Study of ohmic contacts to n-type Ge: Snowplow and laser activation

Available to Purchase
A. Firrincieli, K. Martens, R. Rooyackers, B. Vincent, E. Rosseel, E. Simoen, J. Geypen, H. Bender, C. Claeys, J. A. Kittl
Journal: Applied Physics Letters
Appl. Phys. Lett. 99, 242104 (2011)
https://doi.org/10.1063/1.3666045
Published: December 2011
View article titled, Study of ohmic contacts to n-type Ge: Snowplow and laser activation
Open the PDF for Study of ohmic contacts to n-type Ge: Snowplow and laser activation in another window
Journal Articles

Contact resistivity and Fermi-level pinning in n-type Ge contacts with epitaxial Si-passivation

Available to Purchase
Koen Martens, R. Rooyackers, A. Firrincieli, B. Vincent, R. Loo, B. De Jaeger, M. Meuris, P. Favia, H. Bender, B. Douhard, W. Vandervorst, E. Simoen, M. Jurczak, D. J. Wouters, J. A. Kittl
Journal: Applied Physics Letters
Appl. Phys. Lett. 98, 013504 (2011)
https://doi.org/10.1063/1.3530437
Published: January 2011
View article titled, Contact resistivity and Fermi-level pinning in n-type Ge contacts with epitaxial Si-passivation
Open the PDF for Contact resistivity and Fermi-level pinning in n-type Ge contacts with epitaxial Si-passivation in another window
Journal Articles

The Low‐frequency Noise of Strained Silicon n‐MOSFETs

Available to Purchase
E. Simoen, G. Eneman, P. Verheyen, R. Delhougne, R. Rooyackers, R. Loo, W. Vandervorst, K. De Meyer, C. Claeys
Journal: AIP Conference Proceedings
AIP Conf. Proc. 780, 187–190 (2005)
https://doi.org/10.1063/1.2036728
Published: August 2005
View article titled, The Low‐frequency Noise of Strained Silicon n‐MOSFETs
Open the PDF for The Low‐frequency Noise of Strained Silicon n‐MOSFETs in another window
Journal Articles

Analysis of the two-dimensional-dopant profile in a 90 nm complementary metal–oxide–semiconductor technology using scanning spreading resistance microscopy

Available to Purchase
P. Eyben, D. Alvarez, M. Jurczak, R. Rooyackers, A. De Keersgieter, E. Augendre, W. Vandervorst
Journal: Journal of Vacuum Science & Technology B
J. Vac. Sci. Technol. B 22, 364–368 (2004)
https://doi.org/10.1116/1.1638772
Published: February 2004
View article titled, Analysis of the two-dimensional-dopant profile in a 90 nm complementary metal–oxide–semiconductor technology using scanning spreading resistance microscopy
Open the PDF for Analysis of the two-dimensional-dopant profile in a 90 nm complementary metal–oxide–semiconductor technology using scanning spreading resistance microscopy in another window