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Journal Articles

Passivation of III–V surfaces with crystalline oxidation

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P. Laukkanen, M. P. J. Punkkinen, M. Kuzmin, K. Kokko, J. Lång, R. M. Wallace
Journal: Applied Physics Reviews
Appl. Phys. Rev. 8, 011309 (2021)
https://doi.org/10.1063/1.5126629
Published: February 2021
View article titled, Passivation of III–V surfaces with crystalline oxidation
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Journal Articles

Oxidation of GaSb(100) and its control studied by scanning tunneling microscopy and spectroscopy

J. Mäkelä, M. Tuominen, M. Yasir, M. Kuzmin, J. Dahl, M. P. J. Punkkinen, P. Laukkanen, K. Kokko, R. M. Wallace
Journal: Applied Physics Letters
Appl. Phys. Lett. 107, 061601 (2015)
https://doi.org/10.1063/1.4928544
Published: August 2015
View article titled, Oxidation of GaSb(100) and its control studied by scanning tunneling microscopy and spectroscopy
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Includes: Supplementary data
Journal Articles

Accumulation capacitance frequency dispersion of III-V metal-insulator-semiconductor devices due to disorder induced gap states

R. V. Galatage, D. M. Zhernokletov, H. Dong, B. Brennan, C. L. Hinkle, R. M. Wallace, E. M. Vogel
Journal: Journal of Applied Physics
J. Appl. Phys. 116, 014504 (2014)
https://doi.org/10.1063/1.4886715
Published: July 2014
View article titled, Accumulation capacitance frequency dispersion of III-V metal-insulator-semiconductor devices due to disorder induced gap states
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Journal Articles

Selectivity of metal oxide atomic layer deposition on hydrogen terminated and oxidized Si(001)-(2×1) surface

Roberto C. Longo, Stephen McDonnell, D. Dick, R. M. Wallace, Yves J. Chabal, James H. G. Owen, Josh B. Ballard, John N. Randall, Kyeongjae Cho
Journal: Journal of Vacuum Science & Technology B
J. Vac. Sci. Technol. B 32, 03D112 (2014)
https://doi.org/10.1116/1.4864619
Published: February 2014
View article titled, Selectivity of metal oxide atomic layer deposition on hydrogen terminated and oxidized Si(001)-(2×1) surface
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Journal Articles

Diffusion of In0.53Ga0.47As elements through hafnium oxide during post deposition annealing

W. Cabrera, B. Brennan, H. Dong, T. P. O'Regan, I. M. Povey, S. Monaghan, É. O'Connor, P. K. Hurley, R. M. Wallace, Y. J. Chabal
Journal: Applied Physics Letters
Appl. Phys. Lett. 104, 011601 (2014)
https://doi.org/10.1063/1.4860960
Published: January 2014
View article titled, Diffusion of In<sub>0.53</sub>Ga<sub>0.47</sub>As elements through hafnium oxide during post deposition annealing
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Includes: Supplementary data
Journal Articles

In situ study of e-beam Al and Hf metal deposition on native oxide InP (100)

H. Dong, Santosh KC, A. Azcatl, W. Cabrera, X. Qin, B. Brennan, D. Zhernokletov, K. Cho, R. M. Wallace
Journal: Journal of Applied Physics
J. Appl. Phys. 114, 203505 (2013)
https://doi.org/10.1063/1.4833569
Published: November 2013
View article titled, <em>In situ</em> study of e-beam Al and Hf metal deposition on native oxide InP (100)
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Journal Articles

In situ study of the role of substrate temperature during atomic layer deposition of HfO2 on InP

H. Dong, Santosh, K.C., X. Qin, B. Brennan, S. McDonnell, D. Zhernokletov, C. L. Hinkle, J. Kim, K. Cho, R. M. Wallace
Journal: Journal of Applied Physics
J. Appl. Phys. 114, 154105 (2013)
https://doi.org/10.1063/1.4825218
Published: October 2013
View article titled, <em>In situ</em> study of the role of substrate temperature during atomic layer deposition of HfO<sub>2</sub> on InP
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Journal Articles

In situ study of atomic layer deposition Al2O3 on GaP (100)

H. Dong, B. Brennan, X. Qin, D. M. Zhernokletov, C. L. Hinkle, J. Kim, R. M. Wallace
Journal: Applied Physics Letters
Appl. Phys. Lett. 103, 121604 (2013)
https://doi.org/10.1063/1.4821779
Published: September 2013
View article titled, <em>In situ</em> study of atomic layer deposition Al<sub>2</sub>O<sub>3</sub> on GaP (100)
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Journal Articles

Chemical and electrical characterization of the HfO2/InAlAs interface

B. Brennan, R. V. Galatage, K. Thomas, E. Pelucchi, P. K. Hurley, J. Kim, C. L. Hinkle, E. M. Vogel, R. M. Wallace
Journal: Journal of Applied Physics
J. Appl. Phys. 114, 104103 (2013)
https://doi.org/10.1063/1.4821021
Published: September 2013
View article titled, Chemical and electrical characterization of the HfO<sub>2</sub>/InAlAs interface
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Journal Articles

Indium diffusion through high-k dielectrics in high-k/InP stacks

H. Dong, W. Cabrera, R. V. Galatage, Santosh KC, B. Brennan, X. Qin, S. McDonnell, D. Zhernokletov, C. L. Hinkle, K. Cho, Y. J. Chabal, R. M. Wallace
Journal: Applied Physics Letters
Appl. Phys. Lett. 103, 061601 (2013)
https://doi.org/10.1063/1.4817932
Published: August 2013
View article titled, Indium diffusion through high-k dielectrics in high-k/InP stacks
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Journal Articles

Surface and interfacial reaction study of InAs(100)-crystalline oxide interface

D. M. Zhernokletov, P. Laukkanen, H. Dong, R. V. Galatage, B. Brennan, M. Yakimov, V. Tokranov, J. Kim, S. Oktyabrsky, R. M. Wallace
Journal: Applied Physics Letters
Appl. Phys. Lett. 102, 211601 (2013)
https://doi.org/10.1063/1.4807766
Published: May 2013
View article titled, Surface and interfacial reaction study of InAs(100)-crystalline oxide interface
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Journal Articles

In situ study of HfO2 atomic layer deposition on InP(100)

H. Dong, B. Brennan, D. Zhernokletov, J. Kim, C. L. Hinkle, R. M. Wallace
Journal: Applied Physics Letters
Appl. Phys. Lett. 102, 171602 (2013)
https://doi.org/10.1063/1.4803486
Published: May 2013
View article titled, <em>In situ</em> study of HfO<sub>2</sub> atomic layer deposition on InP(100)
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Journal Articles

Electrical and chemical characteristics of Al2O3/InP metal-oxide-semiconductor capacitors

R. V. Galatage, H. Dong, D. M. Zhernokletov, B. Brennan, C. L. Hinkle, R. M. Wallace, E. M. Vogel
Journal: Applied Physics Letters
Appl. Phys. Lett. 102, 132903 (2013)
https://doi.org/10.1063/1.4799660
Published: April 2013
View article titled, Electrical and chemical characteristics of Al<sub>2</sub>O<sub>3</sub>/InP metal-oxide-semiconductor capacitors
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Journal Articles

Surface and interfacial reaction study of half cycle atomic layer deposited HfO2 on chemically treated GaSb surfaces

D. M. Zhernokletov, H. Dong, B. Brennan, M. Yakimov, V. Tokranov, S. Oktyabrsky, J. Kim, R. M. Wallace
Journal: Applied Physics Letters
Appl. Phys. Lett. 102, 131602 (2013)
https://doi.org/10.1063/1.4800441
Published: April 2013
View article titled, Surface and interfacial reaction study of half cycle atomic layer deposited HfO<sub>2</sub> on chemically treated GaSb surfaces
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Journal Articles

Interfacial bonding and electronic structure of HfO2/GaSb interfaces: A first principles study

K. Xiong, W. Wang, D. M. Zhernokletov, Santosh K. C., R. C. Longo, R. M. Wallace, K. Cho
Journal: Applied Physics Letters
Appl. Phys. Lett. 102, 022901 (2013)
https://doi.org/10.1063/1.4775665
Published: January 2013
View article titled, Interfacial bonding and electronic structure of HfO<sub>2</sub>/GaSb interfaces: A first principles study
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Includes: Supplementary data
Journal Articles

New insights in the passivation of high-k/InP through interface characterization and metal–oxide–semiconductor field effect transistor demonstration: Impact of crystal orientation

Min Xu, Jiangjiang J. Gu, Chen Wang, D. M. Zhernokletov, R. M. Wallace, Peide D. Ye
Journal: Journal of Applied Physics
J. Appl. Phys. 113, 013711 (2013)
https://doi.org/10.1063/1.4772944
Published: January 2013
View article titled, New insights in the passivation of high-<em>k</em>/InP through interface characterization and metal–oxide–semiconductor field effect transistor demonstration: Impact of crystal orientation
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Journal Articles

Low-κ organic layer as a top gate dielectric for graphene field effect transistors

G. Mordi, S. Jandhyala, C. Floresca, S. McDonnell, M. J. Kim, R. M. Wallace, L. Colombo, J. Kim
Journal: Applied Physics Letters
Appl. Phys. Lett. 100, 193117 (2012)
https://doi.org/10.1063/1.4711776
Published: May 2012
View article titled, Low-κ organic layer as a top gate dielectric for graphene field effect transistors
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Journal Articles

Low temperature fabrication and characterization of nickel germanide Schottky source/drain contacts for implant-less germanium p-channel metal-oxide-semiconductor field-effect transistors

D. R. Gajula, D. W. McNeill, B. E. Coss, H. Dong, S. Jandhyala, J. Kim, R. M. Wallace, B. M. Armstrong
Journal: Applied Physics Letters
Appl. Phys. Lett. 100, 192101 (2012)
https://doi.org/10.1063/1.4712564
Published: May 2012
View article titled, Low temperature fabrication and characterization of nickel germanide Schottky source/drain contacts for implant-less germanium p-channel metal-oxide-semiconductor field-effect transistors
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Journal Articles

In situ surface pre-treatment study of GaAs and In0.53Ga0.47As

B. Brennan, D. M. Zhernokletov, H. Dong, C. L. Hinkle, J. Kim, R. M. Wallace
Journal: Applied Physics Letters
Appl. Phys. Lett. 100, 151603 (2012)
https://doi.org/10.1063/1.3702885
Published: April 2012
View article titled, <em>In situ</em> surface pre-treatment study of GaAs and In<sub>0.53</sub>Ga<sub>0.47</sub>As
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Journal Articles

Interfacial oxide re-growth in thin film metal oxide III-V semiconductor systems

S. McDonnell, H. Dong, J. M. Hawkins, B. Brennan, M. Milojevic, F. S. Aguirre-Tostado, D. M. Zhernokletov, C. L. Hinkle, J. Kim, R. M. Wallace
Journal: Applied Physics Letters
Appl. Phys. Lett. 100, 141606 (2012)
https://doi.org/10.1063/1.3700863
Published: April 2012
View article titled, Interfacial oxide re-growth in thin film metal oxide III-V semiconductor systems
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