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R. Kudrawiec
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Journal Articles

Boron influence on bandgap and photoluminescence in BGaN grown on AlN

E. Zdanowicz, D. Iida, L. Pawlaczyk, J. Serafinczuk, R. Szukiewicz, R. Kudrawiec, D. Hommel, K. Ohkawa
Journal: Journal of Applied Physics
J. Appl. Phys. 127, 165703 (2020)
https://doi.org/10.1063/1.5140413
Published: April 2020
View article titled, Boron influence on bandgap and photoluminescence in BGaN grown on AlN
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Journal Articles

Electronic band structure of nitrogen diluted Ga(PAsN): Formation of the intermediate band, direct and indirect optical transitions, and localization of states

M. P. Polak, R. Kudrawiec, O. Rubel
Journal: Journal of Applied Physics
J. Appl. Phys. 126, 175701 (2019)
https://doi.org/10.1063/1.5097977
Published: November 2019
View article titled, Electronic band structure of nitrogen diluted Ga(PAsN): Formation of the intermediate band, direct and indirect optical transitions, and localization of states
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Journal Articles

Verification of threading dislocations density estimation methods suitable for efficient structural characterization of AlxGa1−xN/GaN heterostructures grown by MOVPE

K. Moszak, W. Olszewski, D. Pucicki, J. Serafińczuk, K. Opołczyńska, M. Rudziński, R. Kudrawiec, D. Hommel
Journal: Journal of Applied Physics
J. Appl. Phys. 126, 165304 (2019)
https://doi.org/10.1063/1.5100140
Published: October 2019
View article titled, Verification of threading dislocations density estimation methods suitable for efficient structural characterization of Al<sub><em>x</em></sub>Ga<sub>1−<em>x</em></sub>N/GaN heterostructures grown by MOVPE
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Journal Articles

As-related stability of the band gap temperature dependence in N-rich GaNAs

E. Zdanowicz, P. Ciechanowicz, K. Opolczynska, D. Majchrzak, J.-G. Rousset, E. Piskorska-Hommel, M. Grodzicki, K. Komorowska, J. Serafinczuk, D. Hommel, R. Kudrawiec
Journal: Applied Physics Letters
Appl. Phys. Lett. 115, 092106 (2019)
https://doi.org/10.1063/1.5110245
Published: August 2019
View article titled, As-related stability of the band gap temperature dependence in N-rich GaNAs
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Journal Articles

Effects of the host conduction band energy on the electronic band structure of ZnCdTeO dilute oxide alloys

M. Welna, Ł Janicki, W. M. Linhart, T. Tanaka, K. M. Yu, R. Kudrawiec, W. Walukiewicz
Journal: Journal of Applied Physics
J. Appl. Phys. 126, 083106 (2019)
https://doi.org/10.1063/1.5111600
Published: August 2019
View article titled, Effects of the host conduction band energy on the electronic band structure of ZnCdTeO dilute oxide alloys
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Journal Articles

Mapping the composition-dependence of the energy bandgap of GaAsNBi alloys

J. Occena, T. Jen, J. W. Mitchell, W. M. Linhart, E.-M. Pavelescu, R. Kudrawiec, Y. Q. Wang, R. S. Goldman
Journal: Applied Physics Letters
Appl. Phys. Lett. 115, 082106 (2019)
https://doi.org/10.1063/1.5057424
Published: August 2019
View article titled, Mapping the composition-dependence of the energy bandgap of GaAsNBi alloys
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Includes: Supplementary data
Journal Articles

Photoreflectance and photoinduced microwave reflectance studies of surface band bending in Mg-doped InN

R. Kudrawiec, L. Janicki, W. M. Linhart, M. A. Mayer, I. D. Sharp, S. Choi, O. Bierwagen, J. S. Speck, W. Walukiewicz
Journal: Journal of Applied Physics
J. Appl. Phys. 126, 045712 (2019)
https://doi.org/10.1063/1.5096528
Published: July 2019
View article titled, Photoreflectance and photoinduced microwave reflectance studies of surface band bending in Mg-doped InN
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Journal Articles

Type I GaSb1-xBix/GaSb quantum wells dedicated for mid infrared laser applications: Photoreflectance studies of bandgap alignment

R. Kudrawiec, J. Kopaczek, O. Delorme, M. P. Polak, M. Gladysiewicz, E. Luna, L. Cerutti, E. Tournié, J. B. Rodriguez
Journal: Journal of Applied Physics
J. Appl. Phys. 125, 205706 (2019)
https://doi.org/10.1063/1.5094159
Published: May 2019
View article titled, Type I GaSb<sub>1-x</sub>Bi<sub>x</sub>/GaSb quantum wells dedicated for mid infrared laser applications: Photoreflectance studies of bandgap alignment
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Journal Articles

Band gap renormalization in n-type GeSn alloys made by ion implantation and flash lamp annealing

S. Prucnal, Y. Berencén, M. Wang, L. Rebohle, R. Kudrawiec, M. Polak, V. Zviagin, R. Schmidt-Grund, M. Grundmann, J. Grenzer, M. Turek, A. Droździel, K. Pyszniak, J. Zuk, M. Helm, W. Skorupa, S. Zhou
Journal: Journal of Applied Physics
J. Appl. Phys. 125, 203105 (2019)
https://doi.org/10.1063/1.5082889
Published: May 2019
View article titled, Band gap renormalization in n-type GeSn alloys made by ion implantation and flash lamp annealing
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Journal Articles

Study of delocalized and localized states in ZnSeO layers with photoluminescence, micro-photoluminescence, and time-resolved photoluminescence

M. Wełna, M. Baranowski, R. Kudrawiec
Journal: Journal of Applied Physics
J. Appl. Phys. 125, 205702 (2019)
https://doi.org/10.1063/1.5093548
Published: May 2019
View article titled, Study of delocalized and localized states in ZnSeO layers with photoluminescence, micro-photoluminescence, and time-resolved photoluminescence
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Journal Articles

Direct and indirect optical transitions in bulk and atomically thin MoS2 studied by photoreflectance and photoacoustic spectroscopy

J. Kopaczek, S. J. Zelewski, M. P. Polak, A. Gawlik, D. Chiappe, A. Schulze, M. Caymax, R. Kudrawiec
Journal: Journal of Applied Physics
J. Appl. Phys. 125, 135701 (2019)
https://doi.org/10.1063/1.5080300
Published: April 2019
View article titled, Direct and indirect optical transitions in bulk and atomically thin MoS<sub>2</sub> studied by photoreflectance and photoacoustic spectroscopy
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Journal Articles

Erratum: “Theoretical and experimental studies of electric field distribution in N-polar GaN/AlGaN/GaN heterostructures” [Appl. Phys. Lett. 107 , 262107 (2016)]

M. Gladysiewicz, L. Janicki, M. Siekacz, G. Cywinski, C. Skierbiszewski, R. Kudrawiec
Journal: Applied Physics Letters
Appl. Phys. Lett. 113, 099901 (2018)
https://doi.org/10.1063/1.5049486
Published: August 2018
View article titled, Erratum: “Theoretical and experimental studies of electric field distribution in N-polar GaN/AlGaN/GaN heterostructures” [Appl. Phys. Lett. 107 , 262107 (2016)]
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Journal Articles

Electromodulation spectroscopy of heavy-hole, light-hole, and spin-orbit transitions in GaAsBi layers at hydrostatic pressure

F. Dybała, J. Kopaczek, M. Gladysiewicz, E.-M. Pavelescu, C. Romanitan, O. Ligor, A. Arnoult, C. Fontaine, R. Kudrawiec
Journal: Applied Physics Letters
Appl. Phys. Lett. 111, 192104 (2017)
https://doi.org/10.1063/1.5002622
Published: November 2017
View article titled, Electromodulation spectroscopy of heavy-hole, light-hole, and spin-orbit transitions in GaAsBi layers at hydrostatic pressure
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Journal Articles

Band structure of germanium carbides for direct bandgap silicon photonics

C. A. Stephenson, W. A. O'Brien, M. W. Penninger, W. F. Schneider, M. Gillett-Kunnath, J. Zajicek, K. M. Yu, R. Kudrawiec, R. A. Stillwell, M. A. Wistey
Journal: Journal of Applied Physics
J. Appl. Phys. 120, 053102 (2016)
https://doi.org/10.1063/1.4959255
Published: August 2016
View article titled, Band structure of germanium carbides for direct bandgap silicon photonics
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Journal Articles

Direct optical transitions at K- and H-point of Brillouin zone in bulk MoS2, MoSe2, WS2, and WSe2

J. Kopaczek, M. P. Polak, P. Scharoch, K. Wu, B. Chen, S. Tongay, R. Kudrawiec
Journal: Journal of Applied Physics
J. Appl. Phys. 119, 235705 (2016)
https://doi.org/10.1063/1.4954157
Published: June 2016
View article titled, Direct optical transitions at K- and H-point of Brillouin zone in bulk MoS<sub>2</sub>, MoSe<sub>2</sub>, WS<sub>2</sub>, and WSe<sub>2</sub>
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Journal Articles

Electromodulation spectroscopy of direct optical transitions in Ge1−xSnx layers under hydrostatic pressure and built-in strain

F. Dybała, K. Żelazna, H. Maczko, M. Gladysiewicz, J. Misiewicz, R. Kudrawiec, H. Lin, R. Chen, C. Shang, Y. Huo, T. I. Kamins, J. S. Harris
Journal: Journal of Applied Physics
J. Appl. Phys. 119, 215703 (2016)
https://doi.org/10.1063/1.4953220
Published: June 2016
View article titled, Electromodulation spectroscopy of direct optical transitions in Ge<sub>1−x</sub>Sn<sub>x</sub> layers under hydrostatic pressure and built-in strain
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Journal Articles

Origin and annealing of deep-level defects in GaNAs grown by metalorganic vapor phase epitaxy

Ł. Gelczuk, H. Stokowski, M. Dąbrowska-Szata, R. Kudrawiec
Journal: Journal of Applied Physics
J. Appl. Phys. 119, 185706 (2016)
https://doi.org/10.1063/1.4949514
Published: May 2016
View article titled, Origin and annealing of deep-level defects in GaNAs grown by metalorganic vapor phase epitaxy
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Journal Articles

Electronic band structure and material gain of III-V-Bi quantum wells grown on GaSb substrate and dedicated for mid-infrared spectral range

M. Gladysiewicz, R. Kudrawiec, M. S. Wartak
Journal: Journal of Applied Physics
J. Appl. Phys. 119, 075701 (2016)
https://doi.org/10.1063/1.4941939
Published: February 2016
View article titled, Electronic band structure and material gain of III-V-Bi quantum wells grown on GaSb substrate and dedicated for mid-infrared spectral range
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Journal Articles

Theoretical and experimental studies of electric field distribution in N-polar GaN/AlGaN/GaN heterostructures

M. Gladysiewicz, L. Janicki, M. Siekacz, G. Cywinski, C. Skierbiszewski, R. Kudrawiec
Journal: Applied Physics Letters
Appl. Phys. Lett. 107, 262107 (2015)
https://doi.org/10.1063/1.4939146
Published: December 2015
View article titled, Theoretical and experimental studies of electric field distribution in N-polar GaN/AlGaN/GaN heterostructures
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Journal Articles

8-band and 14-band kp modeling of electronic band structure and material gain in Ga(In)AsBi quantum wells grown on GaAs and InP substrates

M. Gladysiewicz, R. Kudrawiec, M. S. Wartak
Journal: Journal of Applied Physics
J. Appl. Phys. 118, 055702 (2015)
https://doi.org/10.1063/1.4927922
Published: August 2015
View article titled, 8-band and 14-band <em>kp</em> modeling of electronic band structure and material gain in Ga(In)AsBi quantum wells grown on GaAs and InP substrates
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