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R. Gutmann
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Journal Articles

High-density plasma patterning of low dielectric constant polymers: A comparison between polytetrafluoroethylene, parylene-N, and poly(arylene ether)

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T. E. F. M. Standaert, P. J. Matsuo, X. Li, G. S. Oehrlein, T.-M. Lu, R. Gutmann, C. T. Rosenmayer, J. W. Bartz, J. G. Langan, W. R. Entley
Journal: Journal of Vacuum Science & Technology A
J. Vac. Sci. Technol. A 19, 435–446 (2001)
https://doi.org/10.1116/1.1349201
Published: March 2001
View articletitled, High-density plasma patterning of low dielectric constant polymers: A comparison between polytetrafluoroethylene, parylene-N, and poly(arylene ether)
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Journal Articles

Growth and characterization of In 0.2 Ga 0.8 Sb device structures using metalorganic vapor phase epitaxy

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H. Ehsani, I. Bhat, C. Hitchcock, R. Gutmann, G. Charache, M. Freeman
Journal: AIP Conference Proceedings
AIP Conf. Proc. 401, 65–74 (1997)
https://doi.org/10.1063/1.53299
Published: March 1997
View articletitled, Growth and characterization of In 0.2 Ga 0.8 Sb device structures using metalorganic vapor phase epitaxy
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Journal Articles

GaInSb and GaInAsSb thermophotovoltaic device fabrication and characterization

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C. Hitchcock, R. Gutmann, J. Borrego, H. Ehsani, I. Bhat, M. Freeman, G. Charache
Journal: AIP Conference Proceedings
AIP Conf. Proc. 401, 89–103 (1997)
https://doi.org/10.1063/1.53290
Published: March 1997
View articletitled, GaInSb and GaInAsSb thermophotovoltaic device fabrication and characterization
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Journal Articles

Optical properties of degenerately doped silicon films for applications in thermophotovoltaic systems

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H. Ehsani, I. Bhat, J. Borrego, R. Gutmann, E. Brown, R. Dziendziel, M. Freeman, N. Choudhury
Journal: Journal of Applied Physics
J. Appl. Phys. 81, 432–439 (1997)
https://doi.org/10.1063/1.364076
Published: January 1997
View articletitled, Optical properties of degenerately doped silicon films for applications in thermophotovoltaic systems
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Journal Articles

p‐type GaSb and Ga0.8In0.2Sb layers grown by metalorganic vapor phase epitaxy using silane as the dopant source

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H. Ehsani, I. Bhat, R. Gutmann, G. Charache
Journal: Applied Physics Letters
Appl. Phys. Lett. 69, 3863–3865 (1996)
https://doi.org/10.1063/1.117130
Published: December 1996
View articletitled, p‐type GaSb and Ga0.8In0.2Sb layers grown by metalorganic vapor phase epitaxy using silane as the dopant source
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Journal Articles

Characteristics of GaSb and GaInSb layers grown by metalorganic vapor phase epitaxy

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H. Ehsani, I. Bhat, C. Hitchcock, J. Borrego, R. Gutmann
Journal: AIP Conference Proceedings
AIP Conf. Proc. 358, 423–433 (1996)
https://doi.org/10.1063/1.49703
Published: February 1996
View articletitled, Characteristics of GaSb and GaInSb layers grown by metalorganic vapor phase epitaxy
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Journal Articles

Characteristics of indium oxide plasma filters deposited by atmospheric pressure CVD

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S. Dakshina Murthy, E. Langlois, I. Bhat, R. Gutmann, E. Brown, R. Dzeindziel, M. Freeman, N. Choudhury
Journal: AIP Conference Proceedings
AIP Conf. Proc. 358, 290–311 (1996)
https://doi.org/10.1063/1.49694
Published: February 1996
View articletitled, Characteristics of indium oxide plasma filters deposited by atmospheric pressure CVD
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Journal Articles

Characteristics of degenerately doped silicon for spectral control in thermophotovoltaic systems

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H. Ehsani, I. Bhat, J. Borrego, R. Gutmann, E. Brown, R. Dzeindziel, M. Freeman, N. Choudhury
Journal: AIP Conference Proceedings
AIP Conf. Proc. 358, 312–328 (1996)
https://doi.org/10.1063/1.49696
Published: February 1996
View articletitled, Characteristics of degenerately doped silicon for spectral control in thermophotovoltaic systems
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Journal Articles

OMVPE growth and characterization of InGaAs for TPV cells

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H. Ehsani, I. Bhat, D. Marcy, G. Nichols, J. Borrego, J. Parrington, R. Gutmann
Journal: AIP Conference Proceedings
AIP Conf. Proc. 321, 188–193 (1995)
https://doi.org/10.1063/1.47022
Published: January 1995
View articletitled, OMVPE growth and characterization of InGaAs for TPV cells
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Journal Articles

Characterization of InGaAs TPV cells

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M. Zierak, J. Borrego, I. Bhat, H. Ehsani, D. Marcy, R. Gutmann, J. Parrington, G. Charache, G. Nichols
Journal: AIP Conference Proceedings
AIP Conf. Proc. 321, 473–483 (1995)
https://doi.org/10.1063/1.47055
Published: January 1995
View articletitled, Characterization of InGaAs TPV cells
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Journal Articles

Optical waveguides in KTa1−xNbxO3 produced by He ion implantation

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D. Fluck, R. Gutmann, P. Günter, R. Irmscher
Journal: Journal of Applied Physics
J. Appl. Phys. 70, 5147–5149 (1991)
https://doi.org/10.1063/1.348993
Published: November 1991
View articletitled, Optical waveguides in KTa1−xNbxO3 produced by He ion implantation
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Journal Articles

Auger electron and x‐ray photoelectron spectroscopy of monocrystalline layers of KTa1−xNbxO3 grown by liquid‐phase epitaxy

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R. Gutmann, J. Hulliger, R. Hauert, E. M. Moser
Journal: Journal of Applied Physics
J. Appl. Phys. 70, 2648–2653 (1991)
https://doi.org/10.1063/1.349378
Published: September 1991
View articletitled, Auger electron and x‐ray photoelectron spectroscopy of monocrystalline layers of KTa1−xNbxO3 grown by liquid‐phase epitaxy
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Journal Articles

Equilibrium in the Exchange of Tritium Between Ammonia and Hydrogen and the Zero‐Point Energy Difference Between NH3 and NH2T

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Joel R. Gutmann, Max Wolfsberg
Journal: The Journal of Chemical Physics
J. Chem. Phys. 33, 1592–1593 (1960)
https://doi.org/10.1063/1.1731461
Published: November 1960
View articletitled, Equilibrium in the Exchange of Tritium Between Ammonia and Hydrogen and the Zero‐Point Energy Difference Between NH3 and NH2T
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